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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Screening Level | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | Number of Outputs | High Level Output Current | Threshold Voltage | Power Dissipation-Max | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG419LDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg419ldqt1e3-datasheets-6551.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 1μA | 8 | 10 Weeks | 540.001716mg | 12V | 2.7V | 20Ohm | 8 | yes | EAR99 | VIDEO APPLICATION | unknown | 1 | 20nA | e3 | MATTE TIN | 400mW | GULL WING | 260 | 5V | DG419 | 8 | 1 | 40 | 400mW | Multiplexer or Switches | Not Qualified | 41 ns | 32 ns | 6V | Dual, Single | 3V | -5V | 2 | 1 | 20Ohm | 71 dB | BREAK-BEFORE-MAKE | 33ns | 44ns | 2.7V~12V ±3V~6V | 2:1 | SPDT | 1nA | 5pF | 43ns, 31ns | 1pC | -71dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8497DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8497dbt2e1-datasheets-7015.pdf | 6-UFBGA | 21 Weeks | 6 | No | 1 | Single | 6-microfoot | 1.32nF | 50 ns | 10ns | 22 ns | 75 ns | 13A | 12V | 30V | 2.77W Ta 13W Tc | 53mOhm | P-Channel | 1320pF @ 15V | 53mOhm @ 1.5A, 4.5V | 1.1V @ 250μA | 13A Tc | 49nC @ 10V | 53 mΩ | 2V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG1413EQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1.2mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg1413ent1ge4-datasheets-3369.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | Lead Free | 1μA | 16 | 172.98879mg | Unknown | 24V | 4.5V | 1.8Ohm | 16 | No | 4 | GULL WING | 5V | 0.65mm | DG1413 | 1 | 210MHz | 150 ns | 120 ns | 16.5V | 15V | Dual, Single | 4.5V | -5V | 4 | 1.8Ohm | 80 dB | 0.08Ohm | 380ns | 510ns | 4.5V~24V ±4.5V~15V | 1:1 | SPST - NO/NC | 550pA | 11pF 24pF | 150ns, 120ns | -20pC | 80m Ω | -100dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISH114ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sish114adnt1ge3-datasheets-7794.pdf | PowerPAK® 1212-8SH | 14 Weeks | PowerPAK® 1212-8SH | 30V | 3.7W Ta 39W Tc | N-Channel | 1230pF @ 15V | 7.5mOhm @ 18A, 10V | 2.5V @ 250μA | 18A Ta 35A Tc | 32nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2015 | /files/vishaysiliconix-dg417dyt1e3-datasheets-1245.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 8 | 540.001716mg | 36V | 13V | 35Ohm | 8 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | 400mW | GULL WING | 8 | 400mW | Multiplexer or Switches | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | 1 | 35Ohm | 20mOhm | BREAK-BEFORE-MAKE | NC | 12V ±15V | 1:1 | SPST - NC | 250pA | 8pF 8pF | 175ns, 145ns | 60pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA110DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia110djt1ge3-datasheets-8313.pdf | PowerPAK® SC-70-6 | 14 Weeks | PowerPAK® SC-70-6 Single | 100V | 3.5W Ta 19W Tc | N-Channel | 550pF @ 50V | 55mOhm @ 4A, 10V | 4V @ 250μA | 5.4A Ta 12A Tc | 13nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG444BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 5.08mm | ROHS3 Compliant | /files/vishaysiliconix-dg444bdj-datasheets-7580.pdf | 16-DIP (0.300, 7.62mm) | 20.13mm | 7.62mm | 1μA | 16 | 36V | 13V | 80Ohm | 16 | no | unknown | 4 | e0 | 470mW | NOT SPECIFIED | 15V | DG444 | 16 | 1 | NOT SPECIFIED | 470mW | Multiplexer or Switches | Not Qualified | 300 ns | 200 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 80Ohm | 90 dB | BREAK-BEFORE-MAKE | NC | 12V ±15V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN2404K-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-tn2404kt1e3-datasheets-0731.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 3 | EAR99 | Tin | e3 | DUAL | GULL WING | 260 | 1 | Single | 30 | 360mW | 1 | FET General Purpose Powers | 5 ns | 12ns | 16 ns | 35 ns | 200mA | 20V | SILICON | SWITCHING | 800mV | 360mW Ta | 0.2A | 4Ohm | 240V | N-Channel | 800 mV | 4 Ω @ 300mA, 10V | 2V @ 250μA | 200mA Ta | 8nC @ 10V | 2.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG187AP/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg186ap883-datasheets-7590.pdf | 14-DIP (0.300, 7.62mm) | 14 | 30Ohm | 14 | no | 1 | e0 | Tin/Lead (Sn/Pb) | NO | DUAL | 2.54mm | 14 | Multiplexer or Switches | 1 | Not Qualified | 38535Q/M;38534H;883B | 18V | 10V | 30Ohm | BREAK-BEFORE-MAKE | 2:1 | SPDT | ±15V | 1nA | 9pF 6pF | 150ns, 130ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD024PBF | Vishay Siliconix | $1.35 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd024pbf-datasheets-1303.pdf | 60V | 2.5A | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Lead Free | 8 Weeks | Unknown | 100mOhm | 4 | No | Single | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 640pF | 13 ns | 58ns | 58 ns | 25 ns | 2.5A | 20V | 60V | 4V | 1.3W Ta | 180 ns | 100mOhm | 60V | N-Channel | 640pF @ 25V | 100mOhm @ 1.5A, 10V | 4V @ 250μA | 2.5A Ta | 25nC @ 10V | 100 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG201AAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg201aak-datasheets-7661.pdf | 16-CDIP (0.300, 7.62mm) | 19.56mm | 3.94mm | 7.62mm | 15V | 2mA | 36V | 13V | 175Ohm | 16 | 900mW | 4 | 900mW | 4 | 16-CERDIP | 600 ns | 450 ns | 22V | 15V | Dual | 7V | 4 | 4 | 175Ohm | 175mOhm | 1:1 | SPST - NC | ±15V | 1nA | 5pF 5pF | 600ns, 450ns | 20pC | -90dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF840APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf840apbf-datasheets-2205.pdf | 500V | 8A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 11 Weeks | 6.000006g | No SVHC | 850mOhm | 3 | Tin | No | 1 | Single | 125W | 1 | TO-220AB | 1.018nF | 11 ns | 23ns | 19 ns | 26 ns | 8A | 30V | 500V | 4V | 125W Tc | 850mOhm | 500V | N-Channel | 1018pF @ 25V | 4 V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 38nC @ 10V | 850 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG211BDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Bulk | 1 (Unlimited) | CMOS | 30mA | Non-RoHS Compliant | /files/vishaysiliconix-dg212bdyt1-datasheets-7664.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 10μA | 16 | 547.485991mg | 25V | 4.5V | 85Ohm | 16 | no | No | 4 | 30mA | e0 | Tin/Lead (Sn/Pb) | Inverting | 640mW | GULL WING | 1.27mm | 16 | 640mW | Multiplexer or Switches | 512/+-15V | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | 100mA | 4 | 85Ohm | 85Ohm | BREAK-BEFORE-MAKE | NC | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB12N65E-GE3 | Vishay Siliconix | $2.42 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb12n65ege3-datasheets-3509.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 18 Weeks | 1.437803g | Unknown | 3 | No | GULL WING | 1 | Single | 156W | 1 | R-PSSO-G2 | 16 ns | 19ns | 18 ns | 35 ns | 12A | 20V | SILICON | SWITCHING | 650V | 156W Tc | 28A | 226 mJ | 700V | N-Channel | 1224pF @ 100V | 380m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 70nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG301ABA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | TO-100-10 Metal Can | 10 | 14 Weeks | 36V | 13V | 50Ohm | 10 | unknown | 1 | BOTTOM | WIRE | 15V | 10 | 1 | 450mW | 1 | Not Qualified | 22V | 7V | -15V | 2 | 50Ohm | 62 dB | 2:1 | SPDT | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 8pC | -74dB @ 500kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP360PBF | Vishay Siliconix | $1.05 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp360pbf-datasheets-4363.pdf | 400V | 23A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 200mOhm | 3 | No | 1 | Single | 280W | 1 | TO-247-3 | 4.5nF | 18 ns | 79ns | 67 ns | 100 ns | 23A | 20V | 400V | 4V | 280W Tc | 630 ns | 200mOhm | 400V | N-Channel | 4500pF @ 25V | 4 V | 200mOhm @ 14A, 10V | 4V @ 250μA | 23A Tc | 210nC @ 10V | 200 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG309BDQ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2008 | /files/vishaysiliconix-dg309bdqt1-datasheets-7732.pdf | 16-TSSOP (0.173, 4.40mm Width) | 16 | 44V | 4V | 85Ohm | 16 | no | 4 | e0 | Tin/Lead (Sn/Pb) | YES | DUAL | GULL WING | 15V | 0.635mm | 16 | Multiplexer or Switches | +-15V | 4 | Not Qualified | 22V | 4V | -15V | SEPARATE OUTPUT | 85Ohm | BREAK-BEFORE-MAKE | 200ns | NC | 4V~44V ±4V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7 Ω | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR410DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir410dpt1ge3-datasheets-5016.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 36W | 1 | FET General Purpose Powers | R-XDSO-C5 | 25 ns | 15ns | 15 ns | 30 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 4.2W Ta 36W Tc | 23A | 60A | 20V | N-Channel | 1600pF @ 10V | 4.8m Ω @ 20A, 10V | 2.5V @ 250μA | 35A Tc | 41nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG381BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg390bdje3-datasheets-5350.pdf | 14-DIP (0.300, 7.62mm) | 15V | 1mA | 10 Weeks | 36V | 13V | 50Ohm | 14 | no | No | 230μA | 470mW | 14 | 2 | 150 ns | 130 ns | 22V | 15V | Dual, Single | 7V | 50Ohm | 1:1 | SPST - NC | ±15V | 5nA | 14pF 14pF | 150ns, 130ns (Typ) | 10pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR418DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sir418dpt1ge3-datasheets-6744.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 5W | 1 | FET General Purpose Power | R-PDSO-C5 | 19 ns | 73ns | 12 ns | 32 ns | 40A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.4V | 39W Tc | 23.5A | 70A | 0.005Ohm | 45 mJ | 40V | N-Channel | 2410pF @ 20V | 2.4 V | 5m Ω @ 20A, 10V | 2.4V @ 250μA | 40A Tc | 75nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG302AAK/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg300aak883-datasheets-7683.pdf | 14-CDIP (0.300, 7.62mm) | 36V | 13V | 50Ohm | 14 | No | 2 | 825mW | 2 | 14-CERDIP | 22V | 7V | 4 | 4 | 50Ohm | 2:1 | DPST - NO | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 8pC | -74dB @ 500kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4190ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4190adyt1ge3-datasheets-8842.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 8.8MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 30 | 3W | 1 | 150°C | 12 ns | 34 ns | 13A | 20V | SILICON | SWITCHING | 1.5V | 3W Ta 6W Tc | 100V | N-Channel | 1970pF @ 50V | 1.5 V | 8.8m Ω @ 15A, 10V | 2.8V @ 250μA | 18.4A Tc | 67nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG333ALDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2007 | /files/vishaysiliconix-dg333adwe3-datasheets-5131.pdf | 20-DIP (0.300, 7.62mm) | 26.92mm | 3.81mm | 7.11mm | 1μA | 20 | 8 Weeks | 2.508989g | 40V | 5V | 45Ohm | 20 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | NO | 890mW | 2.54mm | 20 | Multiplexer or Switches | 1 | 175 ns | 145 ns | 22V | Dual, Single | 4V | SEPARATE OUTPUT | 45Ohm | 45Ohm | BREAK-BEFORE-MAKE | 5V~40V ±4V~22V | 2:1 | SPDT | 250pA | 8pF | 175ns, 145ns | 10pC | 2 Ω (Max) | -80dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD80460E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sud80460ege3-datasheets-9664.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | 2 | 14 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 65.2W | 1 | 175°C | R-PSSO-G2 | 8 ns | 15 ns | 42A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 65.2W Tc | 40A | 0.0447Ohm | 150V | N-Channel | 560pF @ 50V | 44.7m Ω @ 8.3A, 10V | 4V @ 250μA | 42A Tc | 16nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412AK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg413dj-datasheets-7502.pdf | 16-CDIP (0.300, 7.62mm) | 19.56mm | 3.94mm | 7.62mm | 1μA | 16 | 15 Weeks | 36V | 13V | 35Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | 900mW | 16 | 900mW | Multiplexer or Switches | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | 4 | SEPARATE OUTPUT | 35Ohm | 35Ohm | BREAK-BEFORE-MAKE | 250ns | NO | 5V~44V ±5V~20V | 1:1 | SPST - NO | 250pA | 9pF 9pF | 175ns, 145ns | 5pC | -85dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4401EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq4401eyt1ge3-datasheets-0637.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 12 Weeks | 506.605978mg | Unknown | 8 | Tin | No | 1 | Single | 1.8W | 1 | 8-SO | 4.25nF | 58 ns | 76ns | 44 ns | 67 ns | 17.3A | 20V | 40V | -2V | 7.14W Tc | 11mOhm | -40V | P-Channel | 4250pF @ 20V | -2 V | 14mOhm @ 10.5A, 10V | 2.5V @ 250μA | 17.3A Tc | 115nC @ 10V | 14 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG301AAZ/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~125°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | 20-LCC | 16 Weeks | 44V | 50Ohm | 20 | No | 1 | 50Ohm | 2:1 | SPDT | ±15V | 1nA | 14pF 14pF | 300ns, 250ns | 8pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS61DN-T1-GE3 | Vishay Siliconix | $0.81 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss61dnt1ge3-datasheets-3034.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S | 20V | 5W Ta 65.8W Tc | P-Channel | 8740pF @ 10V | 3.5mOhm @ 15A, 4.5V | 900mV @ 250μA | 30.9A Ta 111.9A Tc | 231nC @ 10V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG409LDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | BICMOS | Non-RoHS Compliant | 2013 | /files/vishaysiliconix-dg409ldqt1e3-datasheets-6643.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 500μA | 16 | 547.485991mg | 12V | 2.7V | 29Ohm | 16 | no | No | 1 | 10μA | e0 | Tin/Lead (Sn/Pb) | 600mW | GULL WING | 16 | 4 | DIFFERENTIAL MULTIPLEXER | 600mW | Multiplexer or Switches | 2 | 150 ns | 150 ns | 6V | Dual, Single | 3V | 8 | 29Ohm | 30Ohm | BREAK-BEFORE-MAKE | 95ns | 2V~12V ±3V~6V | 0.03A | 4:1 | SP4T | 1nA | 7pF 20pF | 55ns, 25ns | 1pC | 1 Ω | -82dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIJA52ADP-T1-GE3 | Vishay Siliconix | $1.16 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sija52adpt1ge3-datasheets-3637.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 40V | 4.8W Ta 48W Tc | N-Channel | 5500pF @ 20V | 1.63mOhm @ 15A, 10V | 2.4V @ 250μA | 41.6A Ta 131A Tc | 100nC @ 10V | 4.5V 10V | +20V, -16V |
