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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | Threshold Voltage | Input Voltage (Max) | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SJM200BCA01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2016 | CDIP | 36V | 13V | 14 | 825mW | 22V | 7V | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002K-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-2n7002kt1ge3-datasheets-5738.pdf | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.12mm | 1.397mm | Lead Free | 1.437803g | Unknown | 2Ohm | 3 | No | 1 | Single | 350mW | 1 | 150°C | SOT-23-3 (TO-236) | 30pF | 25 ns | 35 ns | 300mA | 20V | 60V | 2.5V | 350mW Ta | 2Ohm | 60V | N-Channel | 30pF @ 25V | 2 V | 2Ohm @ 500mA, 10V | 2.5V @ 250μA | 300mA Ta | 0.6nC @ 4.5V | 2 Ω | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 9073706PA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Bulk | 1 (Unlimited) | CMOS | 5.08mm | Non-RoHS Compliant | 2016 | 8-CDIP (0.300, 7.62mm) | 9.78mm | 7.62mm | 8 | 1 | NO | DUAL | NOT SPECIFIED | 15V | 2.54mm | 8 | 1 | NOT SPECIFIED | 1 | R-GDIP-T8 | -15V | 25Ohm | 82 dB | 96ns | 96ns | 2:1 | SPDT | ±15V | 250pA | 12pF | 38pC | -88dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPE30PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfpe30pbf-datasheets-1944.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 8 Weeks | 38.000013g | 3 | No | 1 | Single | 125W | 1 | TO-247-3 | 1.3nF | 12 ns | 33ns | 30 ns | 82 ns | 4.1A | 20V | 800V | 125W Tc | 3Ohm | 800V | N-Channel | 1300pF @ 25V | 3Ohm @ 2.5A, 10V | 4V @ 250μA | 4.1A Tc | 78nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 8767301IA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | 2009 | Metal | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHW47N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihw47n60ege3-datasheets-2291.pdf | TO-3P-3 Full Pack | Lead Free | 3 | 19 Weeks | 38.000013g | Unknown | 64mOhm | 3 | yes | No | 1 | Single | 357W | 1 | FET General Purpose Powers | 50 ns | 25ns | 26 ns | 140 ns | 47A | 20V | SILICON | SWITCHING | 600V | 600V | 2.5V | 357W Tc | TO-247AD | N-Channel | 9620pF @ 100V | 64m Ω @ 24A, 10V | 4V @ 250μA | 47A Tc | 220nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 8767301XA | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | 14 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2393DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2393dst1ge3-datasheets-3128.pdf | TO-236-3, SC-59, SOT-23-3 | 14 Weeks | SOT-23-3 (TO-236) | 30V | 1.3W Ta 2.5W Tc | P-Channel | 980pF @ 15V | 22.7mOhm @ 5A, 10V | 2.2V @ 250μA | 6.1A Ta 7.5A Tc | 25.2nC @ 10V | 4.5V 10V | +16V, -20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM306BCC | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFIBC30GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfibc30gpbf-datasheets-3611.pdf | 600V | 2.5A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 35W | 1 | TO-220-3 | 660pF | 11 ns | 13ns | 14 ns | 35 ns | 2.5A | 20V | 600V | 35W Tc | 2.2Ohm | 600V | N-Channel | 660pF @ 25V | 2.2Ohm @ 1.5A, 10V | 4V @ 250μA | 2.5A Tc | 31nC @ 10V | 2.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2788DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2788dnt1e4-datasheets-4513.pdf | 16-WFQFN | 2.6mm | 750μm | 1.8mm | 1μA | 16 | 57.09594mg | Unknown | 4.3V | 1.65V | 500mOhm | 16 | yes | 2 | 1μA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 525mW | QUAD | NO LEAD | 260 | 3V | DG2788 | 16 | 2 | 40 | 525mW | Multiplexer or Switches | 2 | Not Qualified | 72 ns | 43 ns | Single | 8 | 4 | 500mOhm | 49 dB | 0.05Ohm | BREAK-BEFORE-MAKE | 75ns | 2:2 | 1.65V~4.3V | DPDT | 1nA | 81pF | 72ns, 43ns | 87pC | 50m Ω | -96dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPG40PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfpg40pbf-datasheets-4247.pdf | 1kV | 4.3A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 3 | No | 1 | Single | 150W | 1 | TO-247-3 | 1.6nF | 15 ns | 33ns | 30 ns | 100 ns | 4.3A | 20V | 1000V | 4V | 150W Tc | 710 ns | 3.5Ohm | 1kV | N-Channel | 1600pF @ 25V | 4 V | 3.5Ohm @ 2.6A, 10V | 4V @ 250μA | 4.3A Tc | 120nC @ 10V | 3.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413LDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg411ldqt1-datasheets-8917.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | Lead Free | 1μA | 172.98879mg | 12V | 2.7V | 50Ohm | 16 | No | 450mW | DG413 | 4 | 450mW | 4 | 16-TSSOP | 280MHz | SPST | 50 ns | 35 ns | 6V | Dual, Single | 3V | 4 | 4 | 17Ohm | 2.7V~12V ±3V~6V | 1:1 | SPST - NO/NC | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB17N50LPBF | Vishay Siliconix | $3.32 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfb17n50lpbf-datasheets-5152.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 280mOhm | 3 | No | 1 | Single | 220W | 1 | TO-220AB | 2.76nF | 21 ns | 51ns | 28 ns | 50 ns | 16A | 30V | 500V | 5V | 220W Tc | 250 ns | 320mOhm | N-Channel | 2760pF @ 25V | 5 V | 320mOhm @ 9.9A, 10V | 5V @ 250μA | 16A Tc | 130nC @ 10V | 320 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG636EN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | 500nA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg636ent1e4-datasheets-4736.pdf | 16-WFQFN | 2.6mm | 750μm | 1.8mm | 500nA | 16 | 14 Weeks | 12V | 2.7V | 170Ohm | 16 | yes | No | 2 | 525mW | QUAD | 5V | DG636 | 16 | 2 | 525mW | 610MHz | 60 ns | 52 ns | 5V | Dual, Single | 2.7V | -5V | 4 | 5V | 2 | 115Ohm | 58 dB | 1Ohm | BREAK-BEFORE-MAKE | 76ns | 90ns | 2.7V~12V ±2.7V~5V | 100A | 2:1 | SPDT | 100pA | 2.1pF 4.2pF | 60ns, 52ns | 0.1pC | 1 Ω | -88dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ24LPBF | Vishay Siliconix | $3.97 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlz24lpbf-datasheets-7621.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.01mm | 4.7mm | 3 | 8 Weeks | 6.000006g | Unknown | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Power | 11 ns | 110ns | 41 ns | 23 ns | 17A | 10V | SILICON | DRAIN | SWITCHING | 3.7W Ta 60W Tc | 68A | 60V | N-Channel | 870pF @ 25V | 100m Ω @ 10A, 5V | 2V @ 250μA | 17A Tc | 18nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2015DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2015dnt1e4-datasheets-5327.pdf | 16-VQFN Exposed Pad | 4mm | 950μm | 4mm | 1μA | 16 | 57.09594mg | 3.3V | 2.7V | 1.6Ohm | 16 | yes | 2 | e4 | PALLADIUM GOLD OVER NICKEL | 1.88W | QUAD | NO LEAD | 260 | 3V | 0.65mm | DG2015 | 16 | 2 | 30 | Multiplexer or Switches | 3V | 2 | Not Qualified | 65 ns | 60 ns | Single | SEPARATE OUTPUT | 1.6Ohm | 67 dB | 0.15Ohm | BREAK-BEFORE-MAKE | 67ns | 2:2 | 2.7V~3.3V | DPDT | 1nA | 67pF | 40ns, 35ns | 7pC | 150m Ω | -70dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA11N80E-GE3 | Vishay Siliconix | $12.96 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha11n80ege3-datasheets-8129.pdf | TO-220-3 Full Pack | 14 Weeks | TO-220 Full Pack | 800V | 34W Tc | 380mOhm | N-Channel | 1670pF @ 100V | 440mOhm @ 5.5A, 10V | 4V @ 250μA | 12A Tc | 88nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2512DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2511dnt1e4-datasheets-5355.pdf | 6-UFDFN | 1.2mm | 550μm | 1mm | 1μA | 6 | 57.09594mg | 5.5V | 1.8V | 1.3Ohm | 6 | yes | unknown | 1 | e4 | NICKEL PALLADIUM GOLD | 160mW | DUAL | NO LEAD | 260 | 3V | 0.4mm | DG251* | 6 | 1 | 40 | Multiplexer or Switches | 3/5V | 1 | Not Qualified | SPST | 35 ns | 31 ns | Single | 1.3Ohm | 58 dB | 0.15Ohm | BREAK-BEFORE-MAKE | 34ns | 49ns | NC | 1:1 | 1.8V~5.5V | SPST - NC | 2nA | 19pF | 35ns, 31ns | 14pC | 150m Ω (Max) | -64dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA468DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sia468djt1ge3-datasheets-9124.pdf | PowerPAK® SC-70-6 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 30V | 19W Tc | N-Channel | 1290pF @ 15V | 8.4m Ω @ 11A, 10V | 2.4V @ 250μA | 37.8A Tc | 16nC @ 4.5V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2302DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 900μA | ROHS3 Compliant | 2007 | /files/vishaysiliconix-dg2302dlt1e3-datasheets-5389.pdf | 5-TSSOP, SC-70-5, SOT-353 | 2mm | 1mm | 1.25mm | 1.5mA | 5 | 19.986414mg | 5.5V | 4V | 50Ohm | 5 | yes | No | 1 | e3 | MATTE TIN | 250mW | DUAL | GULL WING | 260 | 5V | DG2302 | 5 | 1 | 40 | Multiplexer or Switches | 5V | 1 | SPST | 5 ns | 3.9 ns | Single | 7Ohm | 1:1 | 4V~5.5V | SPST - NO | 10μA | 5pF | 5ns, 3.9ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3417DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si3417dvt1ge3-datasheets-1144.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 14 Weeks | 19.986414mg | 6 | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 2W | 1 | 42 ns | 35ns | 16 ns | 40 ns | 8A | 20V | SILICON | SWITCHING | 30V | 2W Ta 4.2W Tc | 8A | 0.0252Ohm | -30V | P-Channel | 1350pF @ 15V | 25.2m Ω @ 7.3A, 10V | 3V @ 250μA | 8A Ta | 50nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2517DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 10nA | ROHS3 Compliant | 2015 | /files/vishaysiliconix-dg2517edqt1ge3-datasheets-6857.pdf | 10-VFDFN Exposed Pad | 3mm | 880μm | 3mm | 1μA | 50.008559mg | No SVHC | 5.5V | 1.8V | 4Ohm | 10 | yes | unknown | 1.191W | DG2517 | 10 | 1.191W | 242MHz | 25 ns | 20 ns | Single | 4 | 2 | 4Ohm | 2:1 | 1.8V~5.5V | SPDT | 1nA | 8pF | 25ns, 20ns | 2pC | 100m Ω | -73dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ2351ES-T1_GE3 | Vishay Siliconix | $1.11 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq2351est1ge3-datasheets-2814.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 12 Weeks | 115mOhm | 3 | SOT-23-3 (TO-236) | 20 ns | 18ns | 8 ns | 19 ns | 3.2A | 12V | 20V | 2W Tc | 115mOhm | P-Channel | 330pF @ 10V | 115mOhm @ 2.4A, 4.5V | 1.5V @ 250μA | 3.2A Tc | 5.5nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2742DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | CMOS | 10nA | 1.1mm | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg2743dst1e3-datasheets-5403.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 3mm | 3mm | 1μA | 8 | 3.6V | 1.5V | 8Ohm | 8 | yes | VIDEO APPLICATION | unknown | 2 | 10nA | e3 | MATTE TIN | DUAL | GULL WING | 260 | 1.8V | 0.65mm | DG2742 | 8 | 1 | 40 | Multiplexer or Switches | Not Qualified | SPST | 45 ns | 40 ns | Single | 2 | SEPARATE OUTPUT | 800mOhm | 55 dB | 0.05Ohm | BREAK-BEFORE-MAKE | 50ns | NC | 1:1 | 1.5V~3.6V | SPST - NC | 1nA | 81pF | 30ns, 28ns | 5.8pC | -89dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS782DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/vishaysiliconix-sis782dnt1ge3-datasheets-4202.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | EAR99 | unknown | YES | DUAL | C BEND | NOT SPECIFIED | 8 | 1 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | S-XDSO-C5 | 8 ns | 13ns | 9 ns | 14 ns | 16A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 41W Tc | 50A | 0.0095Ohm | N-Channel | 1025pF @ 15V | 9.5m Ω @ 10A, 10V | 2.3V @ 250μA | 16A Tc | 30.5nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG3517DB-T5-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 1μA | 0.753mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg3516dbt5e1-datasheets-4556.pdf | 10-WFBGA | 1μA | 10 | 5.5V | 1.8V | 2.9Ohm | 10 | yes | No | 2 | e1 | TIN SILVER COPPER | 457mW | BOTTOM | BALL | 260 | 3V | 0.5mm | DG3517 | 10 | 1 | 40 | Multiplexer or Switches | 3/5V | 2 | 300MHz | 51 ns | 45 ns | Single | SEPARATE OUTPUT | 2.9Ohm | 54 dB | 0.25Ohm | BREAK-BEFORE-MAKE | 46ns | NC | 2:1 | 1.8V~5.5V | SPDT | 2nA | 12pF | 45ns, 42ns | 1pC | 250m Ω (Max) | -78dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS472DN-T1-GE3 | Vishay Siliconix | $1.75 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis472dnt1ge3-datasheets-5946.pdf | PowerPAK® 1212-8 | 14 Weeks | PowerPAK® 1212-8 | 30V | 3.5W Ta 28W Tc | N-Channel | 997pF @ 15V | 8.9mOhm @ 15A, 10V | 2.5V @ 250μA | 20A Tc | 30nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG641DJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 3.5mA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg641dy-datasheets-2728.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 15V | 500MHz | 6mA | 16 | 12 Weeks | 1.627801g | 21V | 10V | 15Ohm | 16 | yes | VIDEO APPLICATION | unknown | 4 | e3 | Matte Tin (Sn) | 470mW | NOT SPECIFIED | 15V | DG641 | 16 | 1 | AUDIO/VIDEO SWITCH | NOT SPECIFIED | Multiplexer or Switches | 15-3V | 4 | Not Qualified | SPST | 70 ns | 50 ns | 15V | Dual, Single | 10V | -3V | SEPARATE OUTPUT | 15Ohm | 60 dB | 1Ohm | BREAK-BEFORE-MAKE | 85ns | NC | 3V~15V ±3V~15V | 1:1 | SPST - NO | 10nA | 12pF 12pF | 70ns, 50ns | 19pC | 1 Ω | -87dB @ 5MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4431BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4431bdyt1e3-datasheets-6831.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 30mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | 150°C | 10 ns | 10ns | 47 ns | 70 ns | -7.5A | 20V | -30V | SILICON | 30V | -1V | 1.5W Ta | 5.7A | -30V | P-Channel | -1 V | 30m Ω @ 7.5A, 10V | 3V @ 250μA | 5.7A Ta | 20nC @ 5V | 4.5V 10V | ±20V |
