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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | Number of Functions | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | Number of Outputs | Threshold Voltage | Power Dissipation-Max | Recovery Time | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG1411EQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1.2mm | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg1413ent1ge4-datasheets-3369.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | Lead Free | 1μA | 16 | 172.98879mg | Unknown | 24V | 4.5V | 1.8Ohm | 16 | No | 4 | YES | GULL WING | 5V | 0.65mm | DG1411 | 1 | 4 | 210MHz | 150 ns | 120 ns | 15V | Dual, Single | 4.5V | -5V | 1.8Ohm | 80 dB | 0.08Ohm | 380ns | 510ns | 4.5V~24V ±4.5V~15V | 1:1 | SPST - NC | 550pA | 11pF 24pF | 150ns, 120ns | -20pC | 80m Ω | -100dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS110DN-T1-GE3 | Vishay Siliconix | $0.54 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis110dnt1ge3-datasheets-7363.pdf | PowerPAK® 1212-8 | 14 Weeks | PowerPAK® 1212-8 | 100V | 3.2W Ta 24W Tc | N-Channel | 550pF @ 50V | 54mOhm @ 4A, 10V | 4V @ 250μA | 5.2A Ta 14.2A Tc | 13nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | 30mA | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-dg413dj-datasheets-7502.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 1μA | 8 Weeks | 1.627801g | 36V | 13V | 35Ohm | 16 | No | 470mW | 4 | 470mW | 4 | 16-PDIP | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | 4 | 4 | 35Ohm | 5V~44V ±5V~20V | 1:1 | SPST - NO | 250pA | 9pF 9pF | 175ns, 145ns | 5pC | -85dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISH407DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sish407dnt1ge3-datasheets-8032.pdf | PowerPAK® 1212-8SH | 14 Weeks | PowerPAK® 1212-8SH | 20V | 3.6W Ta 33W Tc | P-Channel | 2760pF @ 10V | 9.5mOhm @ 15.3A, 4.5V | 1V @ 250μA | 15.4A Ta 25A Tc | 93.8nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG445DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | 30mA | Non-RoHS Compliant | 2013 | /files/vishaysiliconix-dg445dy-datasheets-7564.pdf | 16-SOIC (0.154, 3.90mm Width) | 6 Weeks | 4 | 640mW | 4 | 16-SOIC | 85Ohm | 85Ohm | 5V~36V ±5V~20V | 1:1 | SPST - NO | 500pA | 4pF 4pF | 250ns, 210ns | -1pC | -100dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQS481ENW-T1_GE3 | Vishay Siliconix | $12.62 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqs481enwt1ge3-datasheets-9138.pdf | PowerPAK® 1212-8 | 1.17mm | 12 Weeks | 1 | 62.5W | 175°C | PowerPAK® 1212-8 | 7.1 ns | 15.3 ns | -4.7A | 20V | 150V | 62.5W Tc | 910mOhm | -150V | P-Channel | 385pF @ 75V | 1.095Ohm @ 5A, 10V | 3.5V @ 250μA | 4.7A Tc | 11nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG200AAA/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg200aaa883-datasheets-7600.pdf | TO-100-10 Metal Can | 36V | 13V | 70Ohm | 10 | 2 | 450mW | 2 | TO-100-10 | 22V | 7V | 2 | 2 | 70Ohm | 1:1 | SPST - NC | ±15V | 2nA | 9pF 9pF | 440ns, 340ns | -10pC | -90dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQS401EN-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqs401ent1ge3-datasheets-0506.pdf | PowerPAK® 1212-8 | 12 Weeks | PowerPAK® 1212-8 | 40V | 62.5W Tc | 20mOhm | P-Channel | 1875pF @ 20V | 29mOhm @ 12A, 10V | 2.5V @ 250μA | 16A Tc | 21.2nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG202BAK/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | 16-CDIP (0.300, 7.62mm) | 16 | 16 Weeks | 25V | 4.5V | 85Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | DUAL | 16 | 900mW | Multiplexer or Switches | 12/+-15V | 22V | 4.5V | 4 | SEPARATE OUTPUT | 85Ohm | BREAK-BEFORE-MAKE | 300ns | NO | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF830APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irf830apbf-datasheets-1618.pdf | 500V | 5A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 12 Weeks | 6.000006g | Unknown | 1.4Ohm | 3 | No | 5A | 500V | 1 | Single | 74W | 1 | TO-220AB | 620pF | 10 ns | 21ns | 15 ns | 21 ns | 5A | 30V | 500V | 4.5V | 74W Tc | 650 ns | 1.4Ohm | 500V | N-Channel | 620pF @ 25V | 4.5 V | 1.4Ohm @ 3A, 10V | 4.5V @ 250μA | 5A Tc | 24nC @ 10V | 1.4 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG221BDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Bulk | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg221bdy-datasheets-7675.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 1.5mA | 16 | 547.485991mg | 18V | 13V | 90Ohm | no | unknown | 4 | e0 | Tin/Lead (Sn/Pb) | YES | 600mW | GULL WING | 15V | 1.27mm | 16 | Multiplexer or Switches | 4 | Not Qualified | R-PDSO-G16 | 550 ns | 340 ns | 18V | 15V | Dual | 7V | -15V | SEPARATE OUTPUT | 90Ohm | BREAK-BEFORE-MAKE | NC | 1:1 | SPST - NC | ±15V | 5nA | 8pF 9pF | 550ns, 340ns | 20pC | -90dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7439DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7439dpt1ge3-datasheets-2761.pdf | PowerPAK® SO-8 | 4.9mm | 1.12mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 90mOhm | 8 | yes | EAR99 | ULTRA LOW-ON RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1.9W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 25 ns | 46ns | 46 ns | 115 ns | -5.2A | 20V | SILICON | DRAIN | SWITCHING | 150V | -4V | 1.9W Ta | 3A | 50A | -150V | P-Channel | -4 V | 90m Ω @ 5.2A, 10V | 4V @ 250μA | 3A Ta | 135nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG221BDY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg221bdy-datasheets-7675.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 1.5mA | 16 | 547.485991mg | 18V | 13V | 90Ohm | no | No | 4 | e0 | TIN LEAD | YES | 600mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | Multiplexer or Switches | 4 | R-PDSO-G16 | 550 ns | 340 ns | 18V | 15V | Dual | 7V | -15V | SEPARATE OUTPUT | 90Ohm | 70 dB | BREAK-BEFORE-MAKE | NC | 1:1 | SPST - NC | ±15V | 5nA | 8pF 9pF | 550ns, 340ns | 20pC | -90dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF740LCPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf740lcpbf-datasheets-3932.pdf | 400V | 10A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 550mOhm | 3 | No | 1 | Single | 125W | 1 | TO-220AB | 1.1nF | 11 ns | 31ns | 20 ns | 25 ns | 10A | 30V | 400V | 4V | 125W Tc | 570 ns | 550mOhm | 400V | N-Channel | 1100pF @ 25V | 550mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 39nC @ 10V | 550 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG301BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg303bdye3-datasheets-5523.pdf | 14-DIP (0.300, 7.62mm) | 19.3mm | 3.81mm | 7.11mm | 15V | 1mA | 1.620005g | 36V | 13V | 50Ohm | 14 | no | unknown | 470mW | 14 | 1 | 150 ns | 130 ns | 22V | 15V | Dual, Single | 7V | 50Ohm | 2:1 | SPDT | ±15V | 5nA | 14pF 14pF | 150ns, 130ns (Typ) | 8pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA84EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqja84ept1ge3-datasheets-4713.pdf | PowerPAK® SO-8 | 1.267mm | 4 | 14 Weeks | unknown | YES | SINGLE | GULL WING | 1 | 55W | 1 | 175°C | R-PSSO-G4 | 11 ns | 23 ns | 46A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 55W Tc | 36 mJ | 80V | N-Channel | 2100pF @ 25V | 12.5m Ω @ 10A, 10V | 2.5V @ 250μA | 46A Tc | 35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG308ACJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | 0°C~70°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2008 | /files/vishaysiliconix-dg309dy-datasheets-7535.pdf | 16-DIP (0.300, 7.62mm) | 8 Weeks | 4 | 16-PDIP | 100Ohm | 1:1 | SPST - NO | ±15V | 1nA | 11pF 8pF | 200ns, 150ns | -10pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7308DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7308dnt1ge3-datasheets-5925.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 58MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.2W | 1 | FET General Purpose Power | S-XDSO-C5 | 10 ns | 15ns | 10 ns | 20 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 3V | 3.2W Ta 19.8W Tc | 5.4A | 20A | 60V | N-Channel | 665pF @ 15V | 58m Ω @ 5.4A, 10V | 3V @ 250μA | 6A Tc | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG403BDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg403bdy-datasheets-7786.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 15V | 500μA | 16 | 8 Weeks | 1.627801g | 36V | 13V | 45Ohm | 16 | no | unknown | 2 | e0 | TIN LEAD | 450mW | NOT SPECIFIED | 15V | 16 | 2 | SPDT | NOT SPECIFIED | 450mW | Multiplexer or Switches | Not Qualified | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | 45Ohm | 72 dB | 3Ohm | BREAK-BEFORE-MAKE | 1:1 | SPST - NO/NC | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -94.8dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4455DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4455dyt1ge3-datasheets-7920.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 186.993455mg | 8 | No | 1 | Single | 3.1W | 1 | 8-SO | 1.19nF | 20 ns | 95ns | 34 ns | 38 ns | 2A | 20V | 150V | 5.9W Tc | 295mOhm | -150V | P-Channel | 1190pF @ 50V | 295mOhm @ 4A, 10V | 4V @ 250μA | 2A Ta | 42nC @ 10V | 295 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG408LDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | BICMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg409ldqt1e3-datasheets-6643.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 500μA | 16 | 547.485991mg | 12V | 2.7V | 29Ohm | 16 | no | No | 1 | e0 | Tin/Lead (Sn/Pb) | 600mW | GULL WING | 16 | 8 | SINGLE-ENDED MULTIPLEXER | 600mW | Multiplexer or Switches | 1 | 150 ns | 150 ns | 6V | Dual, Single | 3V | 29Ohm | BREAK-BEFORE-MAKE | 95ns | 2.7V~12V ±3V~6V | 0.03A | 8:1 | 1nA | 7pF 20pF | 55ns, 25ns | 1pC | 1 Ω | -82dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD120PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfd120pbf-datasheets-9316.pdf | 100V | 1.3A | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Lead Free | 4 | 8 Weeks | Unknown | 270mOhm | 4 | yes | EAR99 | AVALANCHE RATED | No | DUAL | 4 | Single | 1.3W | 1 | FET General Purpose Powers | 6.8 ns | 27ns | 27 ns | 18 ns | 1.3A | 20V | SILICON | DRAIN | SWITCHING | 4V | 1.3W Ta | 260 ns | 100V | N-Channel | 360pF @ 25V | 270m Ω @ 780mA, 10V | 4V @ 250μA | 1.3A Ta | 16nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG407BDN-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-dg406bdnt1e3-datasheets-9186.pdf | 28-LCC (J-Lead) | 12.57mm | 3.69mm | 12.57mm | 15V | 500μA | 28 | 1.182714g | 36V | 7.5V | 60Ohm | 28 | unknown | 1 | 450mW | QUAD | J BEND | 8 | DPDT | 450mW | Multiplexer or Switches | 2 | Not Qualified | 125 ns | 94 ns | 20V | 163 ns | Dual, Single | 5V | 16 | 60Ohm | BREAK-BEFORE-MAKE | 12V ±5V~20V | 0.03A | 8:1 | 500pA | 6pF 54pF | 107ns, 88ns | 11pC | 3 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR680DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sir680dpt1re3-datasheets-0103.pdf | PowerPAK® SO-8 | 1.17mm | 5 | 14 Weeks | EAR99 | S17-0173-Single | unknown | YES | DUAL | NO LEAD | NOT SPECIFIED | 1 | NOT SPECIFIED | 6.25W | 1 | 150°C | R-PDSO-N5 | 16 ns | 30 ns | 32.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 104W Tc | 200A | 0.0029Ohm | 80 mJ | 80V | N-Channel | 5150pF @ 40V | 2.9m Ω @ 20A, 10V | 3.4V @ 250μA | 100A Tc | 81nC @ 7.5V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412HSDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2013 | /files/vishaysiliconix-dg412hsdy-datasheets-7860.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 8 Weeks | 547.485991mg | 44V | 13V | 35Ohm | 16 | no | unknown | 4 | e0 | TIN LEAD | 600mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | 600mW | Multiplexer or Switches | Not Qualified | 105 ns | 105 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 35Ohm | 25Ohm | 91 dB | BREAK-BEFORE-MAKE | 90ns | NO/NC | 12V ±5V~20V | 1:1 | SPST - NO | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8802DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si8802dbt2e1-datasheets-1785.pdf | 4-XFBGA | Lead Free | 4 | 30 Weeks | Unknown | 54mOhm | 4 | EAR99 | Tin | No | e3 | BOTTOM | BALL | 4 | 1 | Single | 500mW | 1 | FET General Purpose Power | 5 ns | 15ns | 7 ns | 22 ns | 3.5A | 5V | SILICON | SWITCHING | 500mW Ta | 8V | N-Channel | 350 mV | 54m Ω @ 1A, 4.5V | 700mV @ 250μA | 6.5nC @ 4.5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG411LDJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 16-DIP (0.300, 7.62mm) | 4 | 280MHz | 17Ohm | 2.7V~12V ±3V~6V | 1:1 | SPST - NC | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS12DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss12dnt1ge3-datasheets-3246.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 40V | 5W Ta 65.7W Tc | N-Channel | 4270pF @ 20V | 1.98mOhm @ 10A, 10V | 2.4V @ 250μA | 37.5A Ta 60A Tc | 89nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG413HSAK-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~125°C TA | Tube | 1 (Unlimited) | ROHS3 Compliant | 16-SOIC (0.154, 3.90mm Width) | 18 Weeks | 4 | 16-SOIC | 35Ohm | 12V ±5V~20V | 1:1 | SPST - NO/NC | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA52ADP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira52adpt1re3-datasheets-3700.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 40V | 4.8W Ta 48W Tc | N-Channel | 5500pF @ 20V | 1.63mOhm @ 15A, 10V | 2.4V @ 250μA | 41.6A Ta 131A Tc | 100nC @ 10V | 4.5V 10V | +20V, -16V |
