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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SQD50P03-07-T4_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50p0307ge3-datasheets-4543.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 30V | 136W Tc | P-Channel | 5490pF @ 25V | 7mOhm @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 146nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF9630STRL-GE3 | Vishay Siliconix | $0.77 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihfr9014ge3-datasheets-5746.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 3 | Single | D2PAK (TO-263) | 700pF | 12 ns | 28 ns | 4A | 20V | 200V | 3W Ta 74W Tc | 800mOhm | P-Channel | 700pF @ 25V | 800mOhm @ 3.9A, 10V | 4V @ 250μA | 6.5A Tc | 29nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD6N65ET4-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd6n65ege3-datasheets-5134.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 650V | 78W Tc | N-Channel | 820pF @ 100V | 600mOhm @ 3A, 10V | 4V @ 250μA | 7A Tc | 48nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7430DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si7430dpt1ge3-datasheets-4795.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 45mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5.2W | 1 | FET General Purpose Powers | R-XDSO-C5 | 16 ns | 12ns | 7 ns | 20 ns | 26A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 5.2W Ta 64W Tc | 7.2A | 50A | 20 mJ | 150V | N-Channel | 1735pF @ 50V | 45m Ω @ 5A, 10V | 4.5V @ 250μA | 26A Tc | 43nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||
| SUM50020E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum50020ege3-datasheets-2554.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263 (D2Pak) | 60V | 375W Tc | N-Channel | 11150pF @ 30V | 2.2mOhm @ 30A, 10V | 4V @ 250μA | 120A Tc | 128nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG47N60AEL-GE3 | Vishay Siliconix | $8.05 |
Min: 1 Mult: 1 |
download | EL | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg47n60aelge3-datasheets-3645.pdf | TO-247-3 | TO-247AC | 600V | 379W Tc | N-Channel | 4600pF @ 100V | 65mOhm @ 23.5A, 10V | 4V @ 250μA | 47A Tc | 222nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9510 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9510pbf-datasheets-9175.pdf | -100V | -4A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | 43W | TO-220AB | 200pF | 10 ns | 27ns | 17 ns | 15 ns | 4A | 20V | 100V | 43W Tc | 1.2Ohm | -100V | P-Channel | 200pF @ 25V | 1.2Ohm @ 2.4A, 10V | 4V @ 250μA | 4A Tc | 8.7nC @ 10V | 1.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRLD110 | Vishay Siliconix | $2.80 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irld110pbf-datasheets-9501.pdf | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | 4 | 1 | 4-DIP, Hexdip, HVMDIP | 250pF | 9.3 ns | 47ns | 47 ns | 16 ns | 1A | 10V | 100V | 1.3W Ta | 540mOhm | 100V | N-Channel | 250pF @ 25V | 540mOhm @ 600mA, 5V | 2V @ 250μA | 1A Ta | 6.1nC @ 5V | 540 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ24 | Vishay Siliconix | $0.36 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz24pbf-datasheets-1307.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | 3 | No | 1 | Single | TO-220AB | 640pF | 13 ns | 58ns | 42 ns | 25 ns | 17A | 20V | 60V | 60W Tc | 100mOhm | N-Channel | 640pF @ 25V | 100mOhm @ 10A, 10V | 4V @ 250μA | 17A Tc | 25nC @ 10V | 100 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFBE20 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbe20pbf-datasheets-1770.pdf | 800V | 1.8A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | 1 | Single | 54W | 1 | TO-220AB | 530pF | 8.2 ns | 17ns | 27 ns | 58 ns | 1.8A | 20V | 800V | 54W Tc | 6.5Ohm | 800V | N-Channel | 530pF @ 25V | 6.5Ohm @ 1.1A, 10V | 4V @ 250μA | 1.8A Tc | 38nC @ 10V | 6.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFBG30 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbg30pbf-datasheets-8239.pdf | 1kV | 3.1A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | Unknown | 3 | 1 | Single | 125W | 1 | TO-220AB | 980pF | 12 ns | 25ns | 20 ns | 89 ns | 3.1A | 20V | 1000V | 125W Tc | 5Ohm | 1kV | N-Channel | 980pF @ 25V | 4 V | 5Ohm @ 1.9A, 10V | 4V @ 250μA | 3.1A Tc | 80nC @ 10V | 5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF730 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf730pbf-datasheets-1564.pdf | 400V | 5.5A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | 74W | 1 | TO-220AB | 700pF | 10 ns | 15ns | 14 ns | 38 ns | 5.5A | 20V | 400V | 74W Tc | 1Ohm | 400V | N-Channel | 700pF @ 25V | 1Ohm @ 3.3A, 10V | 4V @ 250μA | 5.5A Tc | 38nC @ 10V | 1 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF630S | Vishay Siliconix | $0.13 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 200V | 6.5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 3 | 1 | Single | D2PAK (TO-263) | 800pF | 9.4 ns | 28ns | 20 ns | 39 ns | 9A | 20V | 200V | 3W Ta 74W Tc | 400mOhm | 200V | N-Channel | 800pF @ 25V | 400mOhm @ 5.4A, 10V | 4V @ 250μA | 9A Tc | 43nC @ 10V | 400 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF9540S | Vishay Siliconix | $0.14 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9540spbf-datasheets-4128.pdf | -100V | -19A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Contains Lead | 1.437803g | 3 | 1 | Single | D2PAK | 1.4nF | 16 ns | 73ns | 57 ns | 34 ns | 19A | 20V | 100V | 3.7W Ta 150W Tc | 200mOhm | -100V | P-Channel | 1400pF @ 25V | 200mOhm @ 11A, 10V | 4V @ 250μA | 19A Tc | 61nC @ 10V | 200 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFD420 | Vishay Siliconix | $4.85 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd420pbf-datasheets-5258.pdf | 500V | 460mA | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Contains Lead | 4 | No | 1 | 1.3W | 4-DIP, Hexdip, HVMDIP | 360pF | 8 ns | 8.6ns | 8.6 ns | 33 ns | 370mA | 20V | 500V | 1W Ta | 3Ohm | 500V | N-Channel | 360pF @ 25V | 3Ohm @ 220mA, 10V | 4V @ 250μA | 370mA Ta | 24nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFI720G | Vishay Siliconix | $1.29 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfi720gpbf-datasheets-4695.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 6.000006g | 3 | No | 1 | Single | TO-220-3 | 410pF | 10 ns | 14ns | 13 ns | 30 ns | 2.6A | 20V | 400V | 30W Tc | 1.8Ohm | 400V | N-Channel | 410pF @ 25V | 1.8Ohm @ 1.6A, 10V | 4V @ 250μA | 2.6A Tc | 20nC @ 10V | 1.8 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFI730G | Vishay Siliconix | $0.98 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfi730gpbf-datasheets-4994.pdf | 400V | 3.7A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | 32W | TO-220-3 | 700pF | 10 ns | 15ns | 14 ns | 38 ns | 3.7A | 20V | 400V | 35W Tc | 1Ohm | 400V | N-Channel | 700pF @ 25V | 1Ohm @ 2.1A, 10V | 4V @ 250μA | 3.7A Tc | 38nC @ 10V | 1 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFP354 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp354-datasheets-8608.pdf | TO-247-3 | 3 | no | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 14A | SILICON | SINGLE | DRAIN | SWITCHING | 450V | 450V | 190W Tc | TO-247AC | 0.35Ohm | N-Channel | 2700pF @ 25V | 350m Ω @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFL014 | Vishay Siliconix | $0.24 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfl014trpbf-datasheets-6038.pdf | 60V | 2.7A | TO-261-4, TO-261AA | Contains Lead | 4 | 2W | 1 | SOT-223 | 300pF | 50ns | 19 ns | 13 ns | 2.7A | 20V | 60V | 2W Ta 3.1W Tc | 200mOhm | 60V | N-Channel | 300pF @ 25V | 200mOhm @ 1.6A, 10V | 4V @ 250μA | 2.7A Tc | 11nC @ 10V | 200 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFI830G | Vishay Siliconix | $5.35 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfi830gpbf-datasheets-3802.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 21 Weeks | 6.000006g | 3 | No | 1 | Single | 35W | 1 | TO-220-3 | 610pF | 8.2 ns | 16ns | 16 ns | 42 ns | 3.1A | 20V | 500V | 35W Tc | 1.5Ohm | N-Channel | 610pF @ 25V | 1.5Ohm @ 1.9A, 10V | 4V @ 250μA | 3.1A Tc | 38nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SIHS20N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihs20n50ce3-datasheets-0551.pdf | TO-274AA | 3 | 8 Weeks | 3 | yes | No | SINGLE | 3 | 1 | FET General Purpose Power | 80 ns | 27ns | 44 ns | 32 ns | 20A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 250mW Tc | TO-247AC | 80A | 0.27Ohm | N-Channel | 2942pF @ 25V | 270m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 76nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| SI7868ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7868adpt1e3-datasheets-5408.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 506.605978mg | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Powers | R-XDSO-C5 | 40A | 16V | SILICON | DRAIN | 20V | 20V | 5.4W Ta 83W Tc | 35A | 70A | 0.00275Ohm | 45 mJ | N-Channel | 6110pF @ 10V | 2.25m Ω @ 20A, 10V | 1.6V @ 250μA | 40A Tc | 150nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||
| SIHG22N60EL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg22n60elge3-datasheets-2694.pdf | TO-247-3 | 3 | 18 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 227W Tc | TO-247AC | 21A | 45A | 0.197Ohm | 286 mJ | N-Channel | 1690pF @ 100V | 197m Ω @ 11A, 10V | 5V @ 250μA | 21A Tc | 74nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF840LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irf840l-datasheets-8408.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 9.01mm | 4.7mm | 3 | 11 Weeks | 6.000006g | 3 | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 125W | 1 | FET General Purpose Power | 14 ns | 23ns | 20 ns | 49 ns | 8A | 20V | SILICON | SWITCHING | 500V | 500V | 125W Tc | TO-262AA | 8A | 0.85Ohm | N-Channel | 1300pF @ 25V | 850m Ω @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 63nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| SQM120N04-1M7_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm120n041m7ge3-datasheets-3952.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | 1 | TO-263 (D2Pak) | 17.35nF | 120A | 40V | 300W Tc | N-Channel | 17350pF @ 25V | 1.7mOhm @ 30A, 10V | 3.5V @ 250μA | 120A Tc | 310nC @ 10V | 1.7 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR024TR | Vishay Siliconix | $0.16 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlu024pbf-datasheets-5123.pdf | 60V | 14A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 21 Weeks | 2 | No | Single | 2.5W | D-Pak | 870pF | 11 ns | 110ns | 41 ns | 23 ns | 14A | 10V | 60V | 2.5W Ta 42W Tc | 100mOhm | 60V | N-Channel | 870pF @ 25V | 100mOhm @ 8.4A, 5V | 2V @ 250μA | 14A Tc | 18nC @ 5V | 100 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||
| SIE802DF-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sie802dft1ge3-datasheets-4967.pdf | 10-PolarPAK® (L) | 6.15mm | 800μm | 5.16mm | Lead Free | 4 | 14 Weeks | 1.9mOhm | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | 1 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-XDSO-N4 | 25 ns | 20ns | 10 ns | 65 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 5.2W Ta 125W Tc | 42.7A | N-Channel | 7000pF @ 15V | 1.9m Ω @ 23.6A, 10V | 2.7V @ 250μA | 60A Tc | 160nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| IRFL210PBF | Vishay Siliconix | $0.48 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfl210trpbf-datasheets-8841.pdf | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | Lead Free | 250.212891mg | Unknown | 1.5Ohm | 3 | 96A | 200V | 1 | 2W | 1 | SOT-223 | 140pF | 8.2 ns | 17ns | 8.9 ns | 14 ns | 960mA | 20V | 200V | 4V | 2W Ta 3.1W Tc | 1.5Ohm | 200V | N-Channel | 140pF @ 25V | 4 V | 1.5Ohm @ 580mA, 10V | 4V @ 250μA | 960mA Tc | 8.2nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF644NSPBF | Vishay Siliconix | $0.30 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf644nspbf-datasheets-8681.pdf | 250V | 14A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 1.437803g | 1 | Single | 150W | 1 | D2PAK | 1.06nF | 10 ns | 21ns | 17 ns | 30 ns | 14A | 20V | 250V | 150W Tc | 240mOhm | 250V | N-Channel | 1060pF @ 25V | 240mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 54nC @ 10V | 240 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFIB8N50KPBF | Vishay Siliconix | $1.56 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfib8n50kpbf-datasheets-9318.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 3 | 6.000006g | Unknown | 3 | EAR99 | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Power | Not Qualified | 17 ns | 16ns | 8.4 ns | 28 ns | 6.7A | 30V | SILICON | SWITCHING | 500V | 500V | 5V | 45W Tc | TO-220AB | 27A | 290 mJ | N-Channel | 2160pF @ 25V | 350m Ω @ 4A, 10V | 5V @ 250μA | 6.7A Tc | 89nC @ 10V | 10V | ±30V |
