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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Number of Drivers | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Output Voltage | Output Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| VMO580-02F | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-vmo58002f-datasheets-2219.pdf | 200V | 580A | Y3-Li | Lead Free | 11 | 4 | yes | EAR99 | e3 | Tin (Sn) | UPPER | UNSPECIFIED | NOT SPECIFIED | VMO | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-XUFM-X11 | 500ns | 500 ns | 900 ns | 580A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 0.0038Ohm | 200V | N-Channel | 3.8m Ω @ 430A, 10V | 4V @ 50mA | 580A Tc | 2750nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFY26N30X3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfy26n30x3-datasheets-3776.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 19 Weeks | 300V | 170W Tc | N-Channel | 1.465nF @ 25V | 66m Ω @ 13A, 10V | 4.5V @ 500μA | 26A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP38N30X3 | IXYS | $4.73 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfp38n30x3-datasheets-4130.pdf | TO-220-3 | 19 Weeks | compliant | 300V | 240W Tc | N-Channel | 2240pF @ 25V | 50m Ω @ 19A, 10V | 4.5V @ 1mA | 38A Tc | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK240N15T2 | IXYS |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixfk240n15t2-datasheets-4940.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | 1 | yes | EAR99 | AVALANCHE RATED | 120A | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 150V | 240A | 125 ns | 125ns | 145 ns | 145 ns | 240A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1250W Tc | 600A | 0.0052Ohm | 2000 mJ | N-Channel | 32000pF @ 25V | 5.2m Ω @ 60A, 10V | 5V @ 8mA | 240A Tc | 460nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXFJ26N50P3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixfj26n50p3-datasheets-1849.pdf | TO-247-3 | 8 Weeks | unknown | 14A | 500V | 180W Tc | N-Channel | 2220pF @ 25V | 265m Ω @ 13A, 10V | 5V @ 4mA | 14A Tc | 42nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFB110N60P3 | IXYS | $21.61 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfb110n60p3-datasheets-2165.pdf | TO-264-3, TO-264AA | 20.29mm | 26.59mm | 5.31mm | Lead Free | 3 | 26 Weeks | No SVHC | 264 | EAR99 | AVALANCHE RATED | 3 | Single | 1.89kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 63 ns | 19ns | 11 ns | 77 ns | 110A | 30V | SILICON | DRAIN | SWITCHING | 5V | 1890W Tc | 275A | 0.056Ohm | 3000 mJ | 600V | N-Channel | 18000pF @ 25V | 56m Ω @ 55A, 10V | 5V @ 8mA | 110A Tc | 245nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXFN70N60Q2 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfn70n60q2-datasheets-2549.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 10 Weeks | 4 | yes | AVALANCHE RATED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | 890W | 1 | FET General Purpose Power | 25ns | 12 ns | 60 ns | 70A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 890W Tc | 280A | 0.08Ohm | 5000 mJ | 600V | N-Channel | 7200pF @ 25V | 80m Ω @ 35A, 10V | 5V @ 8mA | 70A Tc | 265nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXTP32P20T | IXYS | $37.70 |
Min: 1 Mult: 1 |
download | TrenchP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtp32p20t-datasheets-5492.pdf | TO-220-3 | Lead Free | 3 | 17 Weeks | EAR99 | AVALANCHE RATED | unknown | SINGLE | 3 | 1 | Other Transistors | Not Qualified | R-PSFM-T3 | 32A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 300W Tc | TO-220AB | 96A | 0.13Ohm | 1000 mJ | P-Channel | 14500pF @ 25V | 130m Ω @ 16A, 10V | 4V @ 250μA | 32A Tc | 185nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||
| IXTA150N15X4-7 | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixta150n15x47-datasheets-5571.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 15 Weeks | 150V | 480W Tc | N-Channel | 5500pF @ 25V | 6.9m Ω @ 75A, 10V | 4.5V @ 250μA | 150A Tc | 105nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFB70N100X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfb70n100x-datasheets-5681.pdf | TO-264-3, TO-264AA | 19 Weeks | 1000V | 1785W Tc | N-Channel | 9160pF @ 25V | 89m Ω @ 35A, 10V | 6V @ 8mA | 70A Tc | 350nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH120N30X3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfh120n30x3-datasheets-9080.pdf | TO-247-3 | 19 Weeks | 300V | 735W Tc | N-Channel | 10.5nF @ 25V | 11m Ω @ 60A, 10V | 4.5V @ 4mA | 120A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH6N120P | IXYS | $2.09 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfa6n120p-datasheets-9264.pdf | TO-247-3 | 3 | 30 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 1200V | 250W Tc | 6A | 18A | 0.0024Ohm | 300 mJ | N-Channel | 2830pF @ 25V | 2.4 Ω @ 500mA, 10V | 5V @ 1mA | 6A Tc | 92nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXFK27N80Q | IXYS | $6.10 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/ixys-ixfk27n80q-datasheets-7167.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 20 ns | 28ns | 13 ns | 50 ns | 27A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 108A | 2500 mJ | 800V | N-Channel | 7600pF @ 25V | 320m Ω @ 500mA, 10V | 4.5V @ 4mA | 27A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| MMIX1T132N50P3 | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-mmix1t132n50p3-datasheets-2170.pdf | 24-PowerSMD, 22 Leads | 30 Weeks | yes | 63A | 500V | 520W Tc | N-Channel | 18600pF @ 25V | 43m Ω @ 66A, 10V | 5V @ 8mA | 63A Tc | 267nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH270N06T3 | IXYS |
Min: 1 Mult: 1 |
download | HiperFET™, TrenchT3™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfh270n06t3-datasheets-1458.pdf | TO-247-3 | 30 Weeks | yes | 270A | 60V | 480W Tc | N-Channel | 12600pF @ 25V | 3.1m Ω @ 100A, 10V | 4V @ 250μA | 270A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY1R6N100D2-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 1000V | 100W Tc | N-Channel | 645pF @ 25V | 10 Ω @ 800mA, 0V | 4.5V @ 100μA | 1.6A Tj | 27nC @ 5V | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY32P05T-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 50V | 83W Tc | P-Channel | 1975pF @ 25V | 39m Ω @ 16A, 10V | 4.5V @ 250μA | 32A Tc | 46nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA4N85X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfa4n85x-datasheets-2710.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | yes | 850V | 150W Tc | N-Channel | 247pF @ 25V | 2.5 Ω @ 2A, 10V | 5.5V @ 250μA | 3.5A Tc | 7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA4N100Q-TRL | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfa4n100q-datasheets-5554.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 8 Weeks | TO-263 (IXFA) | 1.05nF | 4A | 1000V | 150W Tc | N-Channel | 1050pF @ 25V | 3Ohm @ 2A, 10V | 4.5V @ 1.5mA | 4A Tc | 39nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFR15N100Q3 | IXYS | $17.46 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfr15n100q3-datasheets-3652.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | 3 | 30 Weeks | 247 | AVALANCHE RATED, UL RECOGNIZED | unknown | 3 | Single | 400W | 1 | FET General Purpose Power | R-PSIP-T3 | 28 ns | 250ns | 30 ns | 10A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 400W Tc | 45A | 1000 mJ | 1kV | N-Channel | 3250pF @ 25V | 1.2 Ω @ 7.5A, 10V | 6.5V @ 4mA | 10A Tc | 64nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXFK55N50 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | 500V | 55A | TO-264-3, TO-264AA | Lead Free | 3 | 8 Weeks | 90MOhm | 3 | yes | AVALANCHE RATED | No | 3 | Single | 560W | 1 | FET General Purpose Power | 60ns | 45 ns | 120 ns | 55A | 20V | SILICON | DRAIN | SWITCHING | 625W Tc | 220A | 500V | N-Channel | 9400pF @ 25V | 90m Ω @ 27.5A, 10V | 4.5V @ 8mA | 55A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFT140N10P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 1 Weeks | 100V | 600W Tc | N-Channel | 4700pF @ 25V | 11m Ω @ 70A, 10V | 5V @ 4mA | 140A Tc | 155nC @ 10V | 10V 15V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT52N30P | IXYS | $35.36 |
Min: 1 Mult: 1 |
download | PolarHT™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtt52n30p-datasheets-3827.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 400W | 1 | FET General Purpose Power | R-PSSO-G2 | 22ns | 20 ns | 60 ns | 52A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | 0.066Ohm | 300V | N-Channel | 3490pF @ 25V | 66m Ω @ 500mA, 10V | 5V @ 250μA | 52A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTT110N10P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtt110n10p-datasheets-3867.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 3 | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 110A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 480W Tc | 250A | 0.015Ohm | 1000 mJ | N-Channel | 3550pF @ 25V | 15m Ω @ 500mA, 10V | 5V @ 250μA | 110A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFP16N85X | IXYS |
Min: 1 Mult: 1 |
download | 23 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP20N65X | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixtp20n65x-datasheets-3922.pdf | TO-220-3 | 15 Weeks | 20A | 650V | 320W Tc | N-Channel | 1390pF @ 25V | 210m Ω @ 10A, 10V | 5.5V @ 250μA | 20A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH80N30P3 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ROHS3 Compliant | 24 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTT6N120-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 24 Weeks | 1200V | 300W Tc | N-Channel | 1950pF @ 25V | 2.6 Ω @ 3A, 10V | 5V @ 250μA | 6A Tc | 56nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH69N30P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh69n30p-datasheets-4070.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 20 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 25 ns | 25ns | 27 ns | 75 ns | 69A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | TO-247AD | 200A | 0.049Ohm | 1500 mJ | 300V | N-Channel | 4960pF @ 25V | 49m Ω @ 500mA, 10V | 5V @ 4mA | 69A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXTR62N15P | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtr62n15p-datasheets-4107.pdf | ISOPLUS247™ | 3 | 26 Weeks | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | 36A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 150V | 150V | 150W Tc | 150A | 0.045Ohm | 1000 mJ | N-Channel | 2250pF @ 25V | 45m Ω @ 31A, 10V | 5V @ 250μA | 36A Tc | 70nC @ 10V | 10V | ±20V |
