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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTX17N120L | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixtk17n120l-datasheets-3780.pdf | TO-247-3 | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | 39ns | 63 ns | 75 ns | 17A | 30V | SILICON | DRAIN | SWITCHING | 1200V | 700W Tc | 0.9Ohm | 2500 mJ | 1.2kV | N-Channel | 8300pF @ 25V | 900m Ω @ 8.5A, 20V | 5V @ 250μA | 17A Tc | 155nC @ 15V | 20V | ±30V | ||||||||||||||||||||||||||||
| IXFB82N60Q3 | IXYS | $41.34 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfb82n60q3-datasheets-1066.pdf | TO-264-3, TO-264AA | 20.29mm | 26.59mm | 5.31mm | 3 | 26 Weeks | 264 | 3 | Single | 1.56kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 40 ns | 300ns | 60 ns | 82A | 30V | SILICON | DRAIN | SWITCHING | 1560W Tc | 240A | 0.075Ohm | 4000 mJ | 600V | N-Channel | 13500pF @ 25V | 75m Ω @ 41A, 10V | 6.5V @ 8mA | 82A Tc | 275nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXFE34N100 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfe34n100-datasheets-1100.pdf | SOT-227-4, miniBLOC | 4 | 4 | yes | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 580W | 1 | FET General Purpose Power | Not Qualified | 82ns | 40 ns | 150 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1000V | 580W Tc | 136A | 0.28Ohm | 1kV | N-Channel | 15000pF @ 25V | 280m Ω @ 17A, 10V | 5.5V @ 8mA | 30A Tc | 455nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFL40N110P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfl40n110p-datasheets-1148.pdf | ISOPLUS264™ | 26 Weeks | 3 | 357W | Single | 357W | FET General Purpose Power | 55ns | 54 ns | 110 ns | 21A | 30V | 1100V | 1.1kV | N-Channel | 19000pF @ 25V | 280m Ω @ 20A, 10V | 6.5V @ 1mA | 21A Tc | 310nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IXFN40N110P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfn40n110p-datasheets-1188.pdf | SOT-227-4, miniBLOC | 4 | 24 Weeks | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 890W | 1 | FET General Purpose Power | Not Qualified | 55ns | 54 ns | 110 ns | 34A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1100V | 890W Tc | 100A | 0.26Ohm | 2000 mJ | 1.1kV | N-Channel | 19000pF @ 25V | 260m Ω @ 20A, 10V | 6.5V @ 1mA | 34A Tc | 310nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| IXTY1R4N100P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixtp1r4n100p-datasheets-1347.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 24 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 63W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 35ns | 28 ns | 65 ns | 1.4A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 63W Tc | 3A | 100 mJ | 1kV | N-Channel | 450pF @ 25V | 11 Ω @ 500mA, 10V | 4.5V @ 50μA | 1.4A Tc | 17.8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXTA42N15T | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 200W Tc | 42A | 100A | 0.045Ohm | 400 mJ | N-Channel | 1880pF @ 25V | 45m Ω @ 21A, 10V | 4.5V @ 250μA | 42A Tc | 21nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXTP36N20T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 36A | 200V | N-Channel | 36A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP4N85X | IXYS | $0.81 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-ixfa4n85x-datasheets-2710.pdf | TO-220-3 | 19 Weeks | yes | 850V | 150W Tc | N-Channel | 247pF @ 25V | 2.5 Ω @ 2A, 10V | 5.5V @ 250μA | 3.5A Tc | 7nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA1R4N100P | IXYS | $2.59 |
Min: 1 Mult: 1 |
download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixtp1r4n100p-datasheets-1347.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 63W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 35ns | 28 ns | 65 ns | 1.4A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 63W Tc | 3A | 100 mJ | 1kV | N-Channel | 450pF @ 25V | 11 Ω @ 500mA, 10V | 4.5V @ 50μA | 1.4A Tc | 17.8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| IXTA48N20T | IXYS |
Min: 1 Mult: 1 |
download | Trench™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixta48n20t-datasheets-2323.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 26ns | 28 ns | 46 ns | 48A | 30V | SILICON | DRAIN | SWITCHING | 250W Tc | TO-263AA | 130A | 0.05Ohm | 500 mJ | 200V | N-Channel | 3090pF @ 25V | 50m Ω @ 24A, 10V | 4.5V @ 250μA | 48A Tc | 60nC @ 10V | 10V | ±30V | |||||||||||||||||||||||
| IXFP8N85X | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfa8n85xhv-datasheets-3817.pdf | TO-220-3 | 19 Weeks | compliant | 850V | 200W Tc | N-Channel | 654pF @ 25V | 850m Ω @ 4A, 10V | 5.5V @ 250μA | 8A Tc | 17nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP76N25TM | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-220-3 Full Pack, Isolated Tab | 26 Weeks | 250V | 460W Tc | N-Channel | 4920pF @ 25V | 44m Ω @ 38A, 10V | 5V @ 250μA | 76A Tc | 92nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY48P05T-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 50V | 150W Tc | P-Channel | 3660pF @ 25V | 30m Ω @ 24A, 10V | 4.5V @ 250μA | 48A Tc | 53nC @ 10V | 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY1N80P | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixty1n80p-datasheets-3869.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | Pure Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 42W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 1A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 42W Tc | 1A | 2A | 75 mJ | N-Channel | 250pF @ 25V | 14 Ω @ 500mA, 10V | 4V @ 50μA | 1A Tc | 9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXTP120N04T2 | IXYS | $4.13 |
Min: 1 Mult: 1 |
download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtp120n04t2-datasheets-4305.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 8ns | 11 ns | 16 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 200W Tc | TO-220AB | 360A | 0.0061Ohm | 400 mJ | 40V | N-Channel | 3240pF @ 25V | 6.1m Ω @ 25A, 10V | 4V @ 250μA | 120A Tc | 58nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| IXFA10N80P-TRL | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixfa10n80ptrl-datasheets-5276.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 30 Weeks | 800V | 300W Tc | N-Channel | 2050pF @ 25V | 1.1 Ω @ 5A, 10V | 5.5V @ 2.5mA | 10A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTV26N50PS | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtt26n50p-datasheets-3884.pdf | 500V | 26A | PLUS-220SMD | Lead Free | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | R-PSSO-G2 | 25ns | 20 ns | 58 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 460W Tc | 78A | 1000 mJ | 500V | N-Channel | 3600pF @ 25V | 230m Ω @ 13A, 10V | 5.5V @ 250μA | 26A Tc | 65nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IXTV30N60PS | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth30n60p-datasheets-1373.pdf | 600V | 30A | PLUS-220SMD | Lead Free | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | Not Qualified | R-PSSO-G2 | 20ns | 25 ns | 80 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 540W Tc | 80A | 0.24Ohm | 1500 mJ | 600V | N-Channel | 5050pF @ 25V | 240m Ω @ 15A, 10V | 5V @ 250μA | 30A Tc | 82nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IXTV30N60P | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth30n60p-datasheets-1373.pdf | 600V | 30A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 540W | 1 | Not Qualified | 20ns | 25 ns | 80 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 540W Tc | 80A | 0.24Ohm | 1500 mJ | 600V | N-Channel | 5050pF @ 25V | 240m Ω @ 15A, 10V | 5V @ 250μA | 30A Tc | 82nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| IXTV22N60PS | IXYS |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq22n60p-datasheets-0455.pdf | 600V | 22A | PLUS-220SMD | Lead Free | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | R-PSSO-G2 | 20ns | 23 ns | 60 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 400W Tc | 66A | 1000 mJ | 600V | N-Channel | 3600pF @ 25V | 350m Ω @ 11A, 10V | 5.5V @ 250μA | 22A Tc | 62nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IXFR52N30Q | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | ISOPLUS247™ | 300V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFV74N20PS | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh74n20p-datasheets-3542.pdf | PLUS-220SMD | Lead Free | 2 | 34MOhm | 3 | yes | EAR99 | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 21ns | 21 ns | 60 ns | 74A | 20V | SILICON | DRAIN | SWITCHING | 480W Tc | 200A | 1000 mJ | 200V | N-Channel | 3300pF @ 25V | 34m Ω @ 37A, 10V | 5V @ 4mA | 74A Tc | 107nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXFV96N15PS | IXYS |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh96n15p-datasheets-0503.pdf | PLUS-220SMD | 2 | 3 | yes | EAR99 | AVALANCHE ENERGY RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSSO-G2 | 33ns | 18 ns | 66 ns | 96A | 20V | SILICON | DRAIN | SWITCHING | 480W Tc | 250A | 0.024Ohm | 1000 mJ | 150V | N-Channel | 3500pF @ 25V | 24m Ω @ 500mA, 10V | 5V @ 4mA | 96A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IXTA88N085T7 | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta88n085t7-datasheets-7521.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | yes | EAR99 | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 230W | 1 | Not Qualified | R-PSSO-G6 | 54ns | 29 ns | 42 ns | 88A | SILICON | DRAIN | SWITCHING | 230W Tc | 240A | 0.011Ohm | 500 mJ | 85V | N-Channel | 3140pF @ 25V | 11m Ω @ 25A, 10V | 4V @ 100μA | 88A Tc | 69nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXTA98N075T | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixta98n075t-datasheets-7554.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 200W | 1 | Not Qualified | R-PSSO-G2 | 42ns | 27 ns | 42 ns | 98A | 20V | SILICON | DRAIN | SWITCHING | 230W Tc | 280A | 10mOhm | 600 mJ | 75V | N-Channel | 4V @ 100μA | 98A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTA220N055T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta220n055t-datasheets-7591.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 6 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 430W | 1 | Not Qualified | R-PSFM-G6 | 62ns | 53 ns | 53 ns | 220A | SILICON | DRAIN | SWITCHING | 430W Tc | 600A | 0.004Ohm | 1000 mJ | 55V | N-Channel | 7200pF @ 25V | 4m Ω @ 25A, 10V | 4V @ 250μA | 220A Tc | 158nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXTQ160N075T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtq160n075t-datasheets-7625.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 6MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 64ns | 60 ns | 60 ns | 160A | SILICON | DRAIN | SWITCHING | 360W Tc | 750 mJ | 75V | N-Channel | 4950pF @ 25V | 6m Ω @ 25A, 10V | 4V @ 250μA | 160A Tc | 112nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXTV200N10T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtv200n10ts-datasheets-7656.pdf | TO-220-3, Short Tab | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 550W | 1 | FET General Purpose Power | Not Qualified | 31ns | 34 ns | 45 ns | 200A | SILICON | DRAIN | SWITCHING | 550W Tc | 500A | 0.0055Ohm | 1500 mJ | 100V | N-Channel | 9400pF @ 25V | 5.5m Ω @ 50A, 10V | 4.5V @ 250μA | 200A Tc | 152nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXTQ220N075T | IXYS |
Min: 1 Mult: 1 |
download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixth220n075t-datasheets-7567.pdf | TO-3P-3, SC-65-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | 65ns | 47 ns | 55 ns | 220A | SILICON | DRAIN | SWITCHING | 480W Tc | 600A | 0.0045Ohm | 1000 mJ | 75V | N-Channel | 7700pF @ 25V | 4.5m Ω @ 25A, 10V | 4V @ 250μA | 220A Tc | 165nC @ 10V | 10V | ±20V |
