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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | Height Seated (Max) | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Number of Drivers | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Number of Functions | Evaluation Kit | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Qualification Status | JESD-30 Code | Interface IC Type | Output Current | Forward Current | Forward Voltage | Turn On Delay Time | RMS Current (Irms) | Max Surge Current | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Reverse Leakage Current | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Function | Application | DS Breakdown Voltage-Min | Threshold Voltage | Speed | Power - Max | Diode Element Material | Power Dissipation-Max | Hold Current | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Output Peak Current Limit-Nom | Average Rectified Current | Number of Phases | Turn On Time | Turn Off Time | Collector Emitter Voltage (VCEO) | Max Collector Current | Rise / Fall Time (Typ) | High Side Driver | Channel Type | Trigger Device Type | Utilized IC / Part | Current - On State (It (RMS)) (Max) | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Driven Configuration | Gate Type | Current - Peak Output (Source, Sink) | Logic Voltage - VIL, VIH | Avalanche Energy Rating (Eas) | Voltage - DC Reverse (Vr) (Max) | Drain to Source Breakdown Voltage | Voltage - Gate Trigger (Vgt) (Max) | Current - Non Rep. Surge 50, 60Hz (Itsm) | Current - Gate Trigger (Igt) (Max) | Current - On State (It (AV)) (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Turn Off Time-Nom (toff) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Test Condition | Structure | Number of SCRs, Diodes | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Operating Temperature - Junction | Vce(on) (Max) @ Vge, Ic | IGBT Type | Gate Charge | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Switching Energy | Fall Time-Max (tf) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFT6N100Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfh6n100q-datasheets-1418.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 8 Weeks | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 180W | 1 | FET General Purpose Power | R-PSSO-G2 | 15ns | 12 ns | 22 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 180W Tc | 6A | 24A | 2Ohm | 700 mJ | 1kV | N-Channel | 2200pF @ 25V | 1.9 Ω @ 3A, 10V | 4.5V @ 2.5mA | 6A Tc | 48nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTC130N15T | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | ISOPLUS220™ | 150V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH30N50Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/ixys-ixft32n50q-datasheets-5314.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | 42ns | 20 ns | 75 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 120A | 0.16Ohm | 1500 mJ | 500V | N-Channel | 5700pF @ 25V | 160m Ω @ 15A, 10V | 4V @ 4mA | 30A Tc | 300nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFV15N100PS | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh15n100p-datasheets-4049.pdf | PLUS-220SMD | 2 | 3 | yes | AVALANCHE RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 543W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 44ns | 58 ns | 44 ns | 15A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 543W Tc | 40A | 0.76Ohm | 500 mJ | 1kV | N-Channel | 5140pF @ 25V | 760m Ω @ 500mA, 10V | 6.5V @ 1mA | 15A Tc | 97nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFC16N80P | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfc16n80p-datasheets-4300.pdf | ISOPLUS220™ | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | Not Qualified | 32ns | 29 ns | 75 ns | 9A | 30V | SILICON | ISOLATED | SWITCHING | 150W Tc | 9A | 48A | 0.65Ohm | 1500 mJ | 800V | N-Channel | 4600pF @ 25V | 650m Ω @ 8A, 10V | 5V @ 4mA | 9A Tc | 71nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH24N50Q | IXYS | $6.96 |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixft24n50q-datasheets-4238.pdf | TO-247-3 | Lead Free | 3 | 230mOhm | 3 | yes | AVALANCHE RATED | No | 3 | Single | 300W | 1 | 30ns | 16 ns | 55 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 96A | 500V | N-Channel | 3900pF @ 25V | 230m Ω @ 12A, 10V | 4.5V @ 4mA | 24A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTV02N250S | IXYS |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixth02n250-datasheets-2386.pdf | PLUS-220SMD | Lead Free | 2 | 220 | yes | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 57mW | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 200mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 2500V | 83W Tc | 0.2A | 0.5A | 2.5kV | N-Channel | 116pF @ 25V | 450 Ω @ 50mA, 10V | 4.5V @ 250μA | 200mA Tc | 7.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY8N65X2 | IXYS | $2.84 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-ixta8n65x2-datasheets-2725.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 15 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 8A | 650V | 150W Tc | N-Channel | 800pF @ 25V | 500m Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFD28N50Q-72 | IXYS |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX52N30Q | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | TO-247-3 | 3 | yes | EAR99 | compliant | e1 | TIN SILVER COPPER | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 300V | 360W Tc | 52A | 0.06Ohm | N-Channel | 52A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK72N20 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfk72n20-datasheets-3324.pdf | TO-264-3, TO-264AA | 3 | yes | EAR99 | AVALANCHE RATED | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 200V | 200V | 360W Tc | 72A | 288A | 0.035Ohm | N-Channel | 5900pF @ 25V | 35m Ω @ 36A, 10V | 4V @ 4mA | 72A Tc | 280nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY1R4N60P TRL | IXYS |
Min: 1 Mult: 1 |
download | Polar™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixty1r4n60ptrl-datasheets-4675.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 600V | 50W Tc | N-Channel | 140pF @ 25V | 9 Ω @ 700mA, 10V | 5.5V @ 25μA | 1.4A Tc | 5.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM5N100 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixth5n100a-datasheets-4210.pdf | TO-204AA, TO-3 | 2 | 3 | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | 5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 180W Tc | 5A | 20A | N-Channel | 2600pF @ 25V | 2.4 Ω @ 2.5A, 10V | 4.5V @ 250μA | 5A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM5N100A | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixth5n100a-datasheets-4210.pdf | TO-204AA, TO-3 | 2 | 35 Weeks | 3 | yes | No | BOTTOM | PIN/PEG | 2 | 180W | 1 | FET General Purpose Power | O-MBFM-P2 | 5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 180W Tc | 5A | 20A | 2Ohm | N-Channel | 2600pF @ 25V | 2 Ω @ 2.5A, 10V | 4.5V @ 250μA | 5A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDN430MCI | IXYS |
Min: 1 Mult: 1 |
download | Power Management | Box | 1 (Unlimited) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-evdd430ci-datasheets-5891.pdf | Yes | FET Driver (External FET) | IXDN430MCI | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EVDD408 | IXYS |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/ixys-evdn409-datasheets-5903.pdf | Lead Free | Yes | FET Driver (External FET) | IX DD408 DVR | Board(s) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH16P60P | IXYS |
Min: 1 Mult: 1 |
download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixth16p60p-datasheets-8613.pdf | TO-247-3 | 2 | 28 Weeks | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | GULL WING | 4 | 460W | 1 | Other Transistors | R-PSSO-G2 | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 460W Tc | TO-268AA | 48A | 0.72Ohm | 2500 mJ | P-Channel | 5120pF @ 25V | 720m Ω @ 500mA, 10V | 4.5V @ 250μA | 16A Tc | 92nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTX40P50P | IXYS |
Min: 1 Mult: 1 |
download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtk40p50p-datasheets-2169.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | yes | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSIP-T3 | 40A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 890W Tc | 120A | 0.23Ohm | 3500 mJ | P-Channel | 11500pF @ 25V | 230m Ω @ 20A, 10V | 4V @ 1mA | 40A Tc | 205nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ36P15P | IXYS |
Min: 1 Mult: 1 |
download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtp36p15p-datasheets-7043.pdf | TO-3P-3, SC-65-3 | Lead Free | 3 | 24 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Other Transistors | Not Qualified | 31ns | 15 ns | 36 ns | 36A | 20V | SILICON | DRAIN | SWITCHING | 150V | 300W Tc | 90A | 0.11Ohm | 1500 mJ | -150V | P-Channel | 3100pF @ 25V | 110m Ω @ 18A, 10V | 4.5V @ 250μA | 36A Tc | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH50N60P3 | IXYS | $9.73 |
Min: 1 Mult: 1 |
download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-ixfq50n60p3-datasheets-1666.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 30 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED | unknown | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.04kW | 1 | FET General Purpose Power | Not Qualified | 31 ns | 20ns | 17 ns | 62 ns | 50A | 30V | SILICON | DRAIN | SWITCHING | 5V | 1040W Tc | TO-247AD | 125A | 0.145Ohm | 1000 mJ | 600V | N-Channel | 6300pF @ 25V | 145m Ω @ 500mA, 10V | 5V @ 4mA | 50A Tc | 94nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX94N50P2 | IXYS | $20.47 |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixfk94n50p2-datasheets-7156.pdf | TO-247-3 | 3 | 30 Weeks | 247 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.3kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 94A | 30V | SILICON | DRAIN | SWITCHING | 1300W Tc | 240A | 0.055Ohm | 3500 mJ | 500V | N-Channel | 13700pF @ 25V | 55m Ω @ 500mA, 10V | 5V @ 8mA | 94A Tc | 220nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN210N30X3 | IXYS |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/ixys-ixfn210n30x3-datasheets-7329.pdf | SOT-227-4, miniBLOC | 19 Weeks | compliant | 300V | 695W Tc | N-Channel | 24200pF @ 25V | 4.6m Ω @ 105A, 10V | 4.5V @ 8mA | 210A Tc | 375nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DPG30C200PC | IXYS |
Min: 1 Mult: 1 |
Surface Mount | 175°C | -55°C | RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-dpg30c200pc-datasheets-3039.pdf | TO-263 | Lead Free | 2 | 1.59999g | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | 8541.10.00.80 | SINGLE | GULL WING | NOT SPECIFIED | 3 | Common Cathode | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 1.51kV | 240A | 1μA | FAST SOFT RECOVERY | SILICON | 1μA | 200V | 35 ns | 35 ns | RECTIFIER DIODE | 200V | 15A | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEP29-06AS | IXYS |
Min: 1 Mult: 1 |
Surface Mount | 175°C | -55°C | RoHS Compliant | TO-263 | 2 | yes | EAR99 | SNUBBER DIODE, FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | GULL WING | 3 | Single | 1 | R-PSSO-G2 | 1.61V | 250A | CATHODE | SOFT RECOVERY | SILICON | 165W | 250μA | 250A | 600V | 35 ns | 35 ns | RECTIFIER DIODE | 600V | 30A | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEI19-06AS | IXYS |
Min: 1 Mult: 1 |
Surface Mount | 150°C | -40°C | RoHS Compliant | TO-263-3 | 10.29mm | 4.83mm | 9.65mm | Lead Free | 2 | 1.59999g | yes | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | GULL WING | 3 | Single | 1 | Rectifier Diodes | R-PSSO-G2 | 20A | 1.7V | 110A | 50μA | CATHODE | FAST RECOVERY | SILICON | 62W | 110A | 50μA | 600V | 110A | TO-263AA | 50 ns | 50 ns | RECTIFIER DIODE | 600V | 20A | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXDN504PI | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | CMOS | Non-Inverting | 4.57mm | RoHS Compliant | 2007 | /files/ixys-ixdn504d1tr-datasheets-4609.pdf | 8-DIP (0.300, 7.62mm) | 9.59mm | 8 | 599.989307mg | 2 | EAR99 | 2 | 10mA | 4.5V~30V | DUAL | NOT SPECIFIED | 18V | IXD*504 | 8 | NOT SPECIFIED | MOSFET Drivers | 4.5/30V | Not Qualified | R-PDIP-T8 | BUFFER OR INVERTER BASED MOSFET DRIVER | 16ns | 14 ns | 4A | 0.06 μs | 0.05 μs | 9ns 8ns | NO | Independent | Low-Side | IGBT, N-Channel, P-Channel MOSFET | 4A 4A | 0.8V 3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VWO60-08IO7 | IXYS |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | Chassis Mount | -40°C~125°C TJ | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2008 | /files/ixys-vwo6008io7-datasheets-4667.pdf | Module | 12 | 12 | yes | FAST | 8541.30.00.80 | UPPER | SOLDER LUG | NOT SPECIFIED | VWO | 12 | NOT SPECIFIED | 6 | Not Qualified | 43A | 3 BANKS, ANTI-PARALLEL, 2 ELEMENTS | ISOLATED | 200mA | 800V | SCR | 43A | 1.5V | 550A 600A | 100mA | 27A | 3-Phase Controller - All SCRs | 6 SCRs | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEI12-12A | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2000 | /files/ixys-dsei1212a-datasheets-2174.pdf&product=ixys-dsei1212a-5831717 | 1.2kV | 11A | TO-220-2 | 10.66mm | 9.15mm | 4.82mm | Lead Free | 2 | 28 Weeks | No SVHC | 2 | yes | EAR99 | No | 8541.10.00.80 | 3 | Single | 78W | 1 | Rectifier Diodes | 11A | 11A | 2.6V | 25A | 80A | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 75A | 250μA | 1.2kV | 80A | 1.2kV | 70 ns | 70 ns | Standard | 1.2kV | 11A | 1 | 1200V | 250μA @ 1200V | 2.6V @ 12A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXGP20N120 | IXYS |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Standard | ROHS3 Compliant | 2002 | /files/ixys-ixgp20n120-datasheets-0483.pdf | TO-220-3 | 3 | 8 Weeks | 2.299997g | 3 | yes | unknown | 150W | NOT SPECIFIED | IXG*20N120 | 3 | Single | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | SILICON | MOTOR CONTROL | N-CHANNEL | 150W | TO-220AB | 1.2kV | 3V | 57 ns | 1.2kV | 40A | 1200V | 1250 ns | 800V, 20A, 47 Ω, 15V | 20V | 5V | 2.5V @ 15V, 20A | PT | 63nC | 80A | 28ns/400ns | 6.5mJ (off) | 700ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXBA16N170AHV | IXYS |
Min: 1 Mult: 1 |
download | BIMOSFET™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | Standard | Non-RoHS Compliant | /files/ixys-ixbt16n170ahv-datasheets-0833.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 26 Weeks | not_compliant | e3 | Matte Tin (Sn) | 150W | 25ns | 1700V | 16A | 1360V, 10A, 10 Ω, 15V | 6V @ 15V, 10A | 65nC | 40A | 15ns/250ns | 2.5mJ (off) |
