Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STP13N95K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf13n95k3-datasheets-9582.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 850mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | STP13N | 3 | Single | 190W | 1 | FET General Purpose Power | 18 ns | 16ns | 21 ns | 50 ns | 10A | 30V | SILICON | SWITCHING | 4V | 190W Tc | TO-220AB | 40A | 400 mJ | 950V | N-Channel | 1620pF @ 100V | 850m Ω @ 5A, 10V | 5V @ 100μA | 10A Tc | 51nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| APT11N80BC3G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | 800V | 11A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 24 Weeks | 38.000013g | IN PRODUCTION (Last Updated: 1 month ago) | yes | AVALANCHE RATED | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 156W | 1 | Not Qualified | R-PSFM-T3 | 25 ns | 15ns | 7 ns | 70 ns | 11A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 156W Tc | TO-247AD | 33A | 0.45Ohm | 470 mJ | N-Channel | 1585pF @ 25V | 450m Ω @ 7.1A, 10V | 3.9V @ 680μA | 11A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| STP21N90K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp21n90k5-datasheets-4557.pdf | TO-220-3 | Lead Free | 3 | 17 Weeks | 299MOhm | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | SINGLE | STP21N | 3 | 250W | 1 | FET General Purpose Power | R-PSFM-T3 | 17 ns | 27ns | 40 ns | 52 ns | 18.5A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 250W Tc | TO-220AB | 68A | 900V | N-Channel | 1645pF @ 100V | 299m Ω @ 9A, 10V | 5V @ 100μA | 18.5A Tc | 43nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| SIHP33N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp33n60ege3-datasheets-4563.pdf | TO-220-3 | Lead Free | 3 | 14 Weeks | 6.000006g | Unknown | 3 | yes | No | 1 | Single | 278W | 1 | FET General Purpose Powers | 56 ns | 90ns | 80 ns | 150 ns | 33A | 20V | SILICON | SWITCHING | 2V | 278W Tc | TO-220AB | 88A | 0.099Ohm | 600V | N-Channel | 3508pF @ 100V | 99m Ω @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| TK31N60W5,S1VF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-247-3 | 16 Weeks | 38.000013g | 3 | EAR99 | No | 1 | Single | 120 ns | 80ns | 8.5 ns | 165 ns | 30.8A | 30V | 230W Tc | 600V | N-Channel | 3000pF @ 300V | 99m Ω @ 15.4A, 10V | 4.5V @ 1.5mA | 30.8A Ta | 105nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFA60N25X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfa60n25x3-datasheets-4574.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 19 Weeks | yes | 250V | 320W Tc | N-Channel | 3610pF @ 25V | 23m Ω @ 30A, 10V | 4.5V @ 1.5mA | 60A Tc | 50nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF30N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihf30n60ege3-datasheets-4576.pdf | TO-220-3 Full Pack | Lead Free | 3 | 14 Weeks | 6.000006g | Unknown | 125mOhm | 3 | No | 1 | Single | 1 | 19 ns | 32ns | 36 ns | 63 ns | 29A | 20V | SILICON | SWITCHING | 600V | 600V | 2V | 37W Tc | TO-220AB | 65A | 690 mJ | N-Channel | 2600pF @ 100V | 125m Ω @ 15A, 10V | 4V @ 250μA | 29A Tc | 130nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IPW60R099P6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa60r099p6xksa1-datasheets-4358.pdf | TO-247-3 | Lead Free | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | NOT SPECIFIED | 37.9A | 600V | 278W Tc | N-Channel | 3330pF @ 100V | 99m Ω @ 14.5A, 10V | 4.5V @ 1.21mA | 37.9A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW80R280P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipw80r280p7xksa1-datasheets-4501.pdf | TO-247-3 | 3 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 101W Tc | 45A | 0.28Ohm | 43 mJ | N-Channel | 1200pF @ 500V | 280m Ω @ 7.2A, 10V | 3.5V @ 360μA | 17A Tc | 36nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFP3006PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfp3006pbf-datasheets-4506.pdf | TO-247-3 | Lead Free | 12 Weeks | 38.000013g | No SVHC | 3 | EAR99 | No | 1 | FET General Purpose Power | 16 ns | 182ns | 189 ns | 118 ns | 195A | 4V | Single | 60V | 4V | 375W Tc | N-Channel | 8970pF @ 50V | 2.5m Ω @ 170A, 10V | 4V @ 250μA | 195A Tc | 300nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STF11NM80 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb11nm80t4-datasheets-4117.pdf | 800V | 11A | TO-220-3 Full Pack | 10.4mm | 9.3mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 400mOhm | 3 | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | STF11 | 3 | Single | 35W | 1 | FET General Purpose Power | 22 ns | 17ns | 15 ns | 46 ns | 11A | 30V | SILICON | ISOLATED | SWITCHING | 4V | 35W Tc | TO-220AB | 44A | 400 mJ | 800V | N-Channel | 1630pF @ 25V | 400m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 43.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| IXFP90N20X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/ixys-ixfp90n20x3-datasheets-4520.pdf | TO-220-3 | 19 Weeks | 200V | 390W Tc | N-Channel | 5420pF @ 25V | 12.8m Ω @ 45A, 10V | 4.5V @ 1.5mA | 90A Tc | 78nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB24N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb24n65efge3-datasheets-4523.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 21 Weeks | e3 | YES | GULL WING | 1 | R-PSSO-G2 | SILICON | SWITCHING | 650V | 650V | 250W Tc | 24A | 65A | 0.156Ohm | 691 mJ | N-Channel | 2774pF @ 100V | 156m Ω @ 12A, 10V | 4V @ 250μA | 24A Tc | 122nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STI28N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp28n60m2-datasheets-1858.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | NO | SINGLE | STI28N | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 170W Tc | 22A | 88A | 0.15Ohm | 350 mJ | N-Channel | 1440pF @ 100V | 150m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 36nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||
| FQA55N25 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqa55n25-datasheets-4528.pdf | 250V | 55A | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | Lead Free | 3 | 4 Weeks | 6.401g | No SVHC | 40mOhm | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 310W | 1 | FET General Purpose Power | Not Qualified | 100 ns | 700ns | 250 ns | 200 ns | 55A | 30V | SILICON | SWITCHING | 5V | 310W Tc | 220A | 250V | N-Channel | 6250pF @ 25V | 40m Ω @ 27.5A, 10V | 5V @ 250μA | 55A Tc | 180nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||
| R6035ENZ1C9 | ROHM Semiconductor | $22.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/rohm-r6035enz1c9-datasheets-0472.pdf | TO-247-3 | 3 | 10 Weeks | No SVHC | 3 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 35A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 4V | 120W Tc | 105A | 0.102Ohm | 796 mJ | N-Channel | 2720pF @ 25V | 102m Ω @ 18.1A, 10V | 4V @ 1mA | 35A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FCPF16N60NT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SupreMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fcpf16n60nt-datasheets-4547.pdf | TO-220-3 Full Pack | 10.16mm | 15.9mm | 4.7mm | Lead Free | 3 | 12 Weeks | 2.27g | No SVHC | 199mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 357W | 1 | FET General Purpose Power | Not Qualified | 15.8 ns | 15.5ns | 20.2 ns | 60.3 ns | 16A | 30V | SILICON | ISOLATED | SWITCHING | 2V | 35.7W Tc | TO-220AB | 48A | 600V | N-Channel | 2170pF @ 100V | 2 V | 199m Ω @ 8A, 10V | 4V @ 250μA | 16A Tc | 52.3nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||
| SUP40N25-60-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sup40n2560e3-datasheets-4463.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 3 | 14 Weeks | 6.000006g | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 3 | 1 | Single | 3.75W | 1 | FET General Purpose Power | 22 ns | 220ns | 145 ns | 40 ns | 40A | 30V | SILICON | 3.75W Ta 300W Tc | TO-220AB | 70A | 0.06Ohm | 250V | N-Channel | 5000pF @ 25V | 60m Ω @ 20A, 10V | 4V @ 250μA | 40A Tc | 140nC @ 10V | 6V 10V | ±30V | ||||||||||||||||||||||||||||||||
| IPW60R160C6FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw60r160c6fksa1-datasheets-4468.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | EAR99 | No | e3 | Tin (Sn) | SINGLE | 3 | 176W | 1 | 13 ns | 8 ns | 96 ns | 23.8A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 176W Tc | 70A | 497 mJ | N-Channel | 1660pF @ 100V | 160m Ω @ 11.3A, 10V | 3.5V @ 750μA | 23.8A Tc | 75nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPP60R125C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-ipa60r125c6xksa1-datasheets-4733.pdf | TO-220-3 | Lead Free | 3 | 3 | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 219W | 1 | Not Qualified | 15 ns | 12ns | 7 ns | 83 ns | 30A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 219W Tc | TO-220AB | 89A | N-Channel | 2127pF @ 100V | 125m Ω @ 14.5A, 10V | 3.5V @ 960μA | 30A Tc | 96nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FQA90N15-F109 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqa90n15f109-datasheets-4478.pdf | TO-3P-3, SC-65-3 | 3 | 4 Weeks | 6.401g | 3 | ACTIVE (Last Updated: 1 week ago) | yes | NOT SPECIFIED | Single | NOT SPECIFIED | 6W | 1 | FET General Purpose Power | Not Qualified | 105 ns | 760ns | 410 ns | 470 ns | 90A | 25V | SILICON | SWITCHING | 375W Tc | 150V | N-Channel | 8700pF @ 25V | 18m Ω @ 45A, 10V | 4V @ 250μA | 90A Tc | 285nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| IPW60R099C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipw60r099c7xksa1-datasheets-4485.pdf | TO-247-3 | Lead Free | 3 | 18 Weeks | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 14A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 110W Tc | 22A | 83A | 0.099Ohm | 97 mJ | N-Channel | 1819pF @ 400V | 99m Ω @ 9.7A, 10V | 4V @ 490μA | 14A Tc | 42nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPP023NE7N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp023ne7n3gxksa1-datasheets-4490.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | SINGLE | 3 | 300W | 1 | 19 ns | 26ns | 22 ns | 70 ns | 120A | 20V | 75V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300W Tc | TO-220AB | 480A | N-Channel | 14400pF @ 37.5V | 2.3m Ω @ 100A, 10V | 3.8V @ 273μA | 120A Tc | 206nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| STF43N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf43n60dm2-datasheets-4409.pdf | TO-220-3 Full Pack | 17 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STF43N | NOT SPECIFIED | 34A | 600V | 4V | 40W Tc | N-Channel | 2500pF @ 100V | 93m Ω @ 17A, 10V | 5V @ 250μA | 34A Tc | 56nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3747-1E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-2sk37471e-datasheets-4415.pdf | SC-94 | 15.5mm | 24.5mm | 5.5mm | Lead Free | 3 | 18 Weeks | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | HIGH RELIABILITY | Tin | No | e3 | NO | 3 | Single | 3W | 1 | 12 ns | 37ns | 59 ns | 152 ns | 2A | 20V | SILICON | ISOLATED | SWITCHING | 1500V | 3W Ta 50W Tc | 2A | 4A | 1.5kV | N-Channel | 380pF @ 30V | 13 Ω @ 1A, 10V | 2A Ta | 37.5nC @ 10V | 10V | ±35V | ||||||||||||||||||||||||||||||||
| FDB3632-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdb3632f085-datasheets-3674.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 2 Weeks | 1.31247g | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 310W | 1 | FET General Purpose Power | R-PSSO-G2 | 39ns | 46 ns | 96 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 310W Tc | 0.009Ohm | 338 mJ | 100V | N-Channel | 6000pF @ 25V | 9m Ω @ 80A, 10V | 4V @ 250μA | 12A Ta | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPW60R125C6FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa60r125c6xksa1-datasheets-4733.pdf | TO-247-3 | 3 | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 219W Tc | 30A | 89A | 0.125Ohm | 636 mJ | N-Channel | 2127pF @ 100V | 125m Ω @ 14.5A, 10V | 3.5V @ 960μA | 30A Tc | 96nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FQA30N40 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqa30n40-datasheets-4432.pdf | 400V | 30A | TO-3P-3, SC-65-3 | 6.35mm | 6.35mm | 6.35mm | Lead Free | 3 | 10 Weeks | 6.401g | 140MOhm | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | Tin | No | e3 | Single | 290W | 1 | FET General Purpose Power | 80 ns | 320ns | 170 ns | 190 ns | 30A | 30V | SILICON | SWITCHING | 290W Tc | 400V | N-Channel | 4400pF @ 25V | 140m Ω @ 15A, 10V | 5V @ 250μA | 30A Tc | 120nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| TK25N60X,S1F | Toshiba Semiconductor and Storage | $3.70 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-247-3 | 16 Weeks | 25A | 600V | 180W Tc | N-Channel | 2400pF @ 300V | 125m Ω @ 7.5A, 10V | 3.5V @ 1.2mA | 25A Ta | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP048N12N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp048n12n3gxksa1-datasheets-4444.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 300W | 1 | Not Qualified | 31 ns | 55ns | 19 ns | 64 ns | 100A | 20V | 120V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 300W Tc | TO-220AB | 400A | 0.0048Ohm | 740 mJ | N-Channel | 12000pF @ 60V | 4.8m Ω @ 100A, 10V | 4V @ 230μA | 100A Tc | 182nC @ 10V | 10V | ±20V |
