FCPF16N60NT

FCPF16N60NT datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FCPF16N60NT
  • Package: TO-220-3 Full Pack
  • Datasheet: pdf
  • Stock: 6515
  • Description: FCPF16N60NT datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Length 10.16mm
Width 4.7mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series SupreMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 199mOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 35.7W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 357W
Case Connection ISOLATED
Turn On Delay Time 15.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 199m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2170pF @ 100V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 52.3nC @ 10V
Rise Time 15.5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 20.2 ns
Turn-Off Delay Time 60.3 ns
Continuous Drain Current (ID) 16A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 48A
Nominal Vgs 2 V
Height 15.9mm

FCPF16N60NT Description


FCPF16N60NT is an N-channel SupreMOS MOSFET manufactured by onsemi. The MOSFET FCPF16N60NT is the next generation of high voltage super-junction (SJ) technology, with a deep trench filling method that distinguishes it from regular SJ MOSFETs. The FCPF16N60NT results in the lowest Rsp on-resistance, superior switching performance, and robustness. The onsemi SupreMOS MOSFET is well suited for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power.



FCPF16N60NT Features


  • RDS(on) = 170m? ( Typ.) @ VGS = 10V, ID = 8A

  • Ultra low gate charge ( Typ. Qg = 40.2nC )

  • Low effective output capacitance ( Typ. Coss.eff = 176pF )

  • 100% avalanche tested

  • RoHS compliant



FCPF16N60NT Applications


  • LCD/LED/PDP TV

  • Lighting

  • ATX power

  • Solar Inverter

  • AC-DC Power Supply


In Stock

Please send RFQ , we will respond immediately.