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ContactTK31N60W5,S1VF
MOSFET (Metal Oxide) N-Channel Tube 99m Ω @ 15.4A, 10V ±30V 3000pF @ 300V 105nC @ 10V TO-247-3
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-TK31N60W5,S1VF
- Package: TO-247-3
- Datasheet:
- Stock: 6442
- Description: MOSFET (Metal Oxide) N-Channel Tube 99m Ω @ 15.4A, 10V ±30V 3000pF @ 300V 105nC @ 10V TO-247-3 (Kg)
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In Stock
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 38.000013g |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2014 |
| Series | DTMOSIV |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Number of Channels | 1 |
| Power Dissipation-Max | 230W Tc |
| Element Configuration | Single |
| Turn On Delay Time | 120 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 99m Ω @ 15.4A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 1.5mA |
| Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 300V |
| Current - Continuous Drain (Id) @ 25°C | 30.8A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 105nC @ 10V |
| Rise Time | 80ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 8.5 ns |
| Turn-Off Delay Time | 165 ns |
| Continuous Drain Current (ID) | 30.8A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 600V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
