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ContactIRFP3006PBF
IRFP3006PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRFP3006PBF
- Package: TO-247-3
- Datasheet:
- Stock: 9124
- Description: IRFP3006PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 38.000013g |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2012 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Configuration | Single |
| Number of Channels | 1 |
| Power Dissipation-Max | 375W Tc |
| Turn On Delay Time | 16 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 2.5m Ω @ 170A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 8970pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 195A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 300nC @ 10V |
| Rise Time | 182ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 189 ns |
| Turn-Off Delay Time | 118 ns |
| Continuous Drain Current (ID) | 195A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 4V |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
Description
The increased gate, avalanche, and dynamic dV/dt ruggedness of the IRFP3006PBF HEXFET? N-channel Power MOSFET. In SMPS, hard switched, and high-frequency circuits, it is appropriate for synchronous rectification with high efficiency. An N-Channel MOSFET makes a current channel out of electrons. This makes it possible for electrons to pass swiftly and readily across the current when the MOSFET is turned on. Since of the unique properties of N-Channel MOSFETs, the P-Channel chip must be 2 to 3 times larger than the N-Channel chip because the mobility of the carriers is around 2 to 3 times higher for the same RDS(on) value. It is common practice to use MOSFET transistor N-Channels in high current applications because of this.
Features
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Maximum junction temperature (TJ(max))
Applications
High-Speed Power Switching
Hard Switched and High-Frequency Circuits
High-Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
Power Management
Industrial
