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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| RQ5H020SPTL | ROHM Semiconductor | $0.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | SC-96 | 3 | 20 Weeks | 130mOhm | 96 | EAR99 | not_compliant | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | 2A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 45V | 45V | 540mW Ta | 2A | P-Channel | 500pF @ 10V | 190m Ω @ 2A, 10V | 3V @ 1mA | 2A Ta | 9.5nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9M53-60EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk9m5360ex-datasheets-2409.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AEC-Q101; IEC-60134 | SINGLE | GULL WING | 8 | 1 | R-PSSO-G4 | 17A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 36W Tc | 69A | 0.053Ohm | 8.7 mJ | N-Channel | 683pF @ 25V | 46m Ω @ 5A, 10V | 2.1V @ 1mA | 17A Tc | 6nC @ 5V | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS439DNT-T1-GE3 | Vishay Siliconix | $0.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis439dntt1ge3-datasheets-2256.pdf | PowerPAK® 1212-8S | 5 | Unknown | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 1 | S-PDSO-C5 | 38 ns | 33ns | 12 ns | 27 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 30V | 3.8W Ta 52.1W Tc | 90A | -30V | P-Channel | 2135pF @ 15V | 11m Ω @ 14A, 10V | 2.8V @ 250μA | 50A Tc | 68nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP22D4UFA-7B | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmp22d4ufa7b-datasheets-2432.pdf | 3-XFDFN | 650μm | 350μm | 850μm | Lead Free | 3 | 15 Weeks | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | NO LEAD | 260 | 1 | Single | 40 | 1 | Other Transistors | 5.8 ns | 5.7ns | 16.4 ns | 31.1 ns | 330mA | 8V | SILICON | DRAIN | SWITCHING | 400mW Ta | 0.25A | 20V | P-Channel | 28.7pF @ 15V | 1.9 Ω @ 100mA, 4.5V | 1V @ 250μA | 330mA Ta | 0.4nC @ 4.5V | 1.2V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
| PSMN130-200D,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-psmn130200d118-datasheets-2477.pdf&product=nexperiausainc-psmn130200d118-6836328 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.35mm | 2.38mm | 6.22mm | Lead Free | 2 | 12 Weeks | 453.59237mg | No SVHC | 130MOhm | 3 | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 150W | 1 | R-PSSO-G2 | 15 ns | 46ns | 38 ns | 50 ns | 20A | 20V | 200V | SILICON | DRAIN | SWITCHING | 3V | 150W Tc | 80A | 252 mJ | 200V | N-Channel | 2470pF @ 25V | 130m Ω @ 25A, 10V | 4V @ 1mA | 20A Tc | 65nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| ZVN3320A | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | 200V | 100mA | SOT-23 | Lead Free | 3 | yes | EAR99 | 8541.29.00.95 | e3 | Matte Tin (Sn) | 625mW | SINGLE | WIRE | 260 | 3 | 200°C | 40 | 330mW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-W3 | 45pF | 100mA | 20V | SILICON | SINGLE | SWITCHING | N-CHANNEL | 200V | METAL-OXIDE SEMICONDUCTOR | 0.1A | 25Ohm | 200V | 25 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MTM761110LBF | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-mtm761110lbf-datasheets-2500.pdf | 6-SMD, Flat Leads | 2mm | 600μm | 1.7mm | 6 | 10 Weeks | No SVHC | 6 | EAR99 | unknown | DUAL | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Other Transistors | 9 ns | 270 ns | -4A | 8V | SILICON | SWITCHING | 12V | -650mV | 700mW Ta | 4A | 0.034Ohm | -12V | P-Channel | 1400pF @ 10V | 650 mV | 34m Ω @ 1A, 4.5V | 1V @ 1mA | 4A Ta | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AON2260 | Alpha & Omega Semiconductor Inc. | $1.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | 6-UDFN Exposed Pad | 6 | 18 Weeks | EAR99 | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N6 | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 2.8W Ta | 6A | 30A | 0.044Ohm | N-Channel | 426pF @ 30V | 44m Ω @ 6A, 10V | 2.5V @ 250μA | 6A Ta | 12nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2035UFDF-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/diodesincorporated-dmp2035ufdf7-datasheets-2026.pdf | 6-UDFN Exposed Pad | 22 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | NOT SPECIFIED | NOT SPECIFIED | 20V | 2.03W Ta | P-Channel | 1808pF @ 15V | 29m Ω @ 6.4A, 4.5V | 1V @ 250μA | 8.1A Ta | 20.5nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3021LFDF-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/diodesincorporated-dmn3021lfdf7-datasheets-2252.pdf | 6-UDFN Exposed Pad | 17 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | NOT SPECIFIED | NOT SPECIFIED | 30V | 2.03W Ta | N-Channel | 706pF @ 15V | 15m Ω @ 7A, 10V | 2.2V @ 250μA | 11.8A Ta | 14nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3433CDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si3433cdvt1ge3-datasheets-2732.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | 6 | 14 Weeks | 19.986414mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.6W | 1 | Other Transistors | 20 ns | 22ns | 22 ns | 50 ns | -6A | 8V | SILICON | SWITCHING | 20V | 20V | 3.3W Tc | 5.2A | 0.038Ohm | P-Channel | 1300pF @ 10V | 38m Ω @ 5.2A, 4.5V | 1V @ 250μA | 6A Tc | 45nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||
| FK4B01110L1 | Panasonic Electronic Components | $0.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-fk4b01110l1-datasheets-2097.pdf | 4-XFLGA, CSP | 16 Weeks | 12V | 340mW Ta | N-Channel | 274pF @ 10V | 64m Ω @ 1.5A, 4.5V | 1V @ 118μA | 2.3A Ta | 2.55nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDN361BN | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdn361bn-datasheets-2099.pdf | TO-236-3, SC-59, SOT-23-3 | 1.4mm | 940μm | 2.92mm | Lead Free | 3 | 10 Weeks | 30mg | No SVHC | 3 | ACTIVE (Last Updated: 7 hours ago) | yes | EAR99 | FAST SWITCHING | Tin | e3 | DUAL | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 500mW | 1 | FET General Purpose Power | Not Qualified | 3 ns | 8ns | 8 ns | 16 ns | 1.4A | 20V | SILICON | SWITCHING | 2.1V | 500mW Ta | 30V | N-Channel | 193pF @ 15V | 110m Ω @ 1.4A, 10V | 3V @ 250μA | 1.4A Ta | 1.8nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| DMG4800LFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-dmg4800lfg7-datasheets-1167.pdf&product=diodesincorporated-dmg4800lfg7-6836262 | 8-PowerUDFN | 5 | 16 Weeks | No SVHC | 8 | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 8 | 1 | 40 | 1 | FET General Purpose Power | S-PDSO-N5 | 5.03 ns | 4.5ns | 8.55 ns | 26.33 ns | 7.44A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 940mW Ta | N-Channel | 798pF @ 10V | 17m Ω @ 9A, 10V | 1.5V @ 250μA | 7.44A Ta | 9.47nC @ 5V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||
| RQ3E160ADTB | ROHM Semiconductor | $0.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | 8-PowerVDFN | 5 | 20 Weeks | No SVHC | 3.5mOhm | 8 | EAR99 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 16A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.5V | 2W Ta | 64A | 23 mJ | N-Channel | 2550pF @ 15V | 4.5m Ω @ 16A, 10V | 2.5V @ 1mA | 16A Ta | 51nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FJ4B01110L1 | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-fj4b01110l1-datasheets-2108.pdf | 4-XFLGA, CSP | 16 Weeks | 12V | 340mW Ta | P-Channel | 226pF @ 10V | 153m Ω @ 700mA, 4.5V | 1V @ 598μA | 1.4A Ta | 3.3nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB422EDK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sib422edkt1ge3-datasheets-2177.pdf | PowerPAK® SC-75-6L | Lead Free | 14 Weeks | 95.991485mg | Unknown | 30mOhm | 6 | No | 1 | Single | PowerPAK® SC-75-6L Single | 9A | 8V | 20V | 1V | 2.5W Ta 13W Tc | 82mOhm | N-Channel | 30mOhm @ 5A, 4.5V | 1V @ 250μA | 9A Tc | 18nC @ 8V | 30 mΩ | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RQ3E100GNTB | ROHM Semiconductor | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rq3e100gntb-datasheets-2196.pdf | 8-PowerVDFN | Lead Free | 5 | 20 Weeks | 8 | EAR99 | not_compliant | DUAL | FLAT | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PDSO-F5 | 8.4 ns | 4.3ns | 3.1 ns | 22.4 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 2W Ta 15W Tc | 40A | 30V | N-Channel | 420pF @ 15V | 11.7m Ω @ 10A, 10V | 2.5V @ 1mA | 10A Ta | 7.9nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM650P03CX RFG | Taiwan Semiconductor Corporation | $0.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | TO-236-3, SC-59, SOT-23-3 | 25 Weeks | 260 | 30 | 30V | 1.56W Tc | P-Channel | 810pF @ 15V | 65m Ω @ 4A, 10V | 900mV @ 250μA | 4.1A Tc | 6.4nC @ 4.5V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCP87090T-U/MF | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/microchiptechnology-mcp87090tulc-datasheets-1364.pdf | 8-PowerTDFN | 5mm | 1mm | 6mm | Lead Free | 11 Weeks | No SVHC | 8 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - annealed | YES | 260 | MCP87090 | Single | 40 | 2.2W | 1 | FET General Purpose Powers | 2.5 ns | 9.3ns | 2.9 ns | 5.3 ns | 64A | 10V | 1.35V | 2.2W Ta | 25V | N-Channel | 580pF @ 12.5V | 1.35 V | 10.5m Ω @ 10V | 1.7V @ 250μA | 64A Tc | 10nC @ 4.5V | 4.5V 10V | +10V, -8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| RTU002P02T106 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/rohmsemiconductor-rtu002p02t106-datasheets-1995.pdf | -20V | -200mA | SC-70, SOT-323 | Lead Free | 3 | 7 Weeks | No SVHC | 1.5Ohm | 3 | yes | EAR99 | Copper, Silver, Tin | No | 25A | e1 | TIN SILVER COPPER | 20V | DUAL | GULL WING | 260 | 3 | Single | 10 | 200mW | 1 | Other Transistors | 9 ns | 6ns | 6 ns | 35 ns | 250mA | 12V | SILICON | SWITCHING | -700mV | 200mW Ta | -20V | P-Channel | 50pF @ 10V | -700 mV | 1.5 Ω @ 250mA, 4.5V | 2V @ 1mA | 250mA Ta | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| RQ5L020SNTL | ROHM Semiconductor | $0.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rq5l020sntl-datasheets-2229.pdf | SC-96 | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 60V | 700mW Ta | N-Channel | 180pF @ 10V | 170m Ω @ 2A, 10V | 2.5V @ 1mA | 2A Ta | 2.7nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| US5U38TR | ROHM Semiconductor | $0.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | Lead Free | 5 | 12 Weeks | 800MOhm | 5 | EAR99 | No | e2 | TIN COPPER | 700mW | DUAL | FLAT | 260 | Single | 10 | 700mW | 1 | Other Transistors | 150pF | 9 ns | 8ns | 8 ns | 25 ns | 1A | 12V | SWITCHING | P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 1A | 390mOhm | 20V | 390 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCH3486-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-mch3486tlw-datasheets-2222.pdf | 3-SMD, Flat Lead | Lead Free | 7 Weeks | 3 | ACTIVE (Last Updated: 2 days ago) | yes | not_compliant | 6 ns | 5ns | 11 ns | 28 ns | 2A | 20V | 60V | 1W Ta | N-Channel | 310pF @ 20V | 137m Ω @ 1A, 10V | 2.6V @ 1mA | 2A Ta | 7nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM250N02CX RFG | Taiwan Semiconductor Corporation | $2.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-236-3, SC-59, SOT-23-3 | 25 Weeks | 20V | 1.56W Tc | N-Channel | 535pF @ 10V | 25m Ω @ 4A, 4.5V | 800mV @ 250μA | 5.8A Tc | 7.7nC @ 4.5V | 1.8V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2319DDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2319ddst1ge3-datasheets-2020.pdf | TO-236-3, SC-59, SOT-23-3 | 14 Weeks | SOT-23-3 (TO-236) | 40V | 1W Ta 1.7W Tc | P-Channel | 650pF @ 20V | 75mOhm @ 2.7A, 10V | 2.5V @ 250μA | 2.7A Ta 3.6A Tc | 19nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7880-55/CUF | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk788055cuf-datasheets-1713.pdf | TO-261-4, TO-261AA | 4 | 12 Weeks | 4 | Tin | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | 9 ns | 15ns | 12 ns | 18 ns | 3.5A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 8.3W Tc | 7.5A | 0.08Ohm | 30 mJ | N-Channel | 500pF @ 25V | 80m Ω @ 5A, 10V | 4V @ 1mA | 3.5A Ta | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD13303W1015 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 0.85 | ROHS3 Compliant | 6-UFBGA, DSBGA | 1.5mm | 1mm | 1.8mm | Lead Free | 12 Weeks | 6 | ACTIVE (Last Updated: 5 days ago) | yes | 2mm | EAR99 | 8541.29.00.95 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | CSD13303 | Single | FET General Purpose Power | 4.6 ns | 10ns | 3.2 ns | 14.7 ns | 3.5A | 8V | 1.65W Ta | 31A | 12V | N-Channel | 715pF @ 6V | 20m Ω @ 1.5A, 4.5V | 1.2V @ 250μA | 31A Ta | 4.7nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6J501NU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | 6-WDFN Exposed Pad | 12 Weeks | EAR99 | unknown | 1W | 10A | 8V | 20V | 1W Ta | -20V | P-Channel | 2600pF @ 10V | 15.3m Ω @ 4A, 4.5V | 1V @ 1mA | 10A Ta | 29.9nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RTE002P02TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/rohmsemiconductor-rte002p02tl-datasheets-1704.pdf | -20V | -200mA | SC-75, SOT-416 | Lead Free | 3 | 7 Weeks | No SVHC | 3 | yes | EAR99 | No | TIN/TIN COPPER | DUAL | GULL WING | 260 | 3 | Single | 10 | 150mW | 1 | Other Transistors | 9 ns | 6ns | 6 ns | 35 ns | 200mA | 12V | 20V | SILICON | SWITCHING | 150mW Ta | 0.2A | 1.6Ohm | -20V | P-Channel | 50pF @ 10V | 2 V | 1.5 Ω @ 200mA, 4.5V | 2V @ 1mA | 200mA Ta | 2.5V 4.5V | ±12V |
