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FDN361BN datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDN361BN
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 557
- Description: FDN361BN datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 7 hours ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 30mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | FAST SWITCHING |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 500mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 500mW |
| Turn On Delay Time | 3 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 110m Ω @ 1.4A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 193pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 1.4A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 1.8nC @ 4.5V |
| Rise Time | 8ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 16 ns |
| Continuous Drain Current (ID) | 1.4A |
| Threshold Voltage | 2.1V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Height | 940μm |
| Length | 1.4mm |
| Width | 2.92mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDN361BN Description
FDN361BN N-Channel MOSFET was created with a distinctive technology that provides the most efficient RDS(on). FDN361BN MOSFET enables better performance in the application and also better switching capabilities to minimize the power loss in converters and inverter systems. FDN361BN ON Semiconductor is a general-purpose device and can be used in Battery Powered Circuits, Notebook Computers, PCMCIA Cards, and Portable Phones.
FDN361BN Features
Low Gate Charge
Industry Standard Package
RDS(ON) = 160 mΩ @ VGS = 4.5 V
High Performance
RDS(ON) = 110 mΩ @ VGS = 10 V
FDN361BN Applications
Battery Powered Circuits
Notebook Computers
PCMCIA Cards
Portable Phones
