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ContactDMG4800LFG-7
MOSFET (Metal Oxide) N-Channel Digi-Reel® 17m Ω @ 9A, 10V ±25V 798pF @ 10V 9.47nC @ 5V 30V 8-PowerUDFN
- Manufacturer: Diodes Incorporated
- NO: 233-DMG4800LFG-7
- Package: 8-PowerUDFN
- Datasheet:
- Stock: 888
- Description: MOSFET (Metal Oxide) N-Channel Digi-Reel® 17m Ω @ 9A, 10V ±25V 798pF @ 10V 9.47nC @ 5V 30V 8-PowerUDFN (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerUDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Digi-Reel® |
| Published | 2009 |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 8 |
| JESD-30 Code | S-PDSO-N5 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 940mW Ta |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 5.03 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 17m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 798pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 7.44A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 9.47nC @ 5V |
| Rise Time | 4.5ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 8.55 ns |
| Turn-Off Delay Time | 26.33 ns |
| Continuous Drain Current (ID) | 7.44A |
| Gate to Source Voltage (Vgs) | 25V |
| DS Breakdown Voltage-Min | 30V |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
DMG4800LFG-7 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 798pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 7.44A. As a result of its turn-off delay time, which is 26.33 ns, the device has taken time to charge its input capacitance before drain current conduction begins.A turn-on delay time of 5.03 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Operating this transistor requires a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
DMG4800LFG-7 Features
a continuous drain current (ID) of 7.44A
the turn-off delay time is 26.33 ns
a 30V drain to source voltage (Vdss)
DMG4800LFG-7 Applications
There are a lot of Diodes Incorporated DMG4800LFG-7 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Server power supplies
- Motor control
- Power Management Functions
- Solar Inverter
- Power Tools
- Lighting
- LCD/LED/ PDP TV Lighting
- Micro Solar Inverter
- Lighting, Server, Telecom and UPS.
