PSMN130-200D,118

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 130m Ω @ 25A, 10V ±20V 2470pF @ 25V 65nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63


  • Manufacturer: Nexperia USA Inc.
  • NO: 554-PSMN130-200D,118
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: pdf
  • Stock: 8390
  • Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 130m Ω @ 25A, 10V ±20V 2470pF @ 25V 65nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63 (Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series TrenchMOS™
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 130MOhm
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 150W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 150W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 130m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2470pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Rise Time 46ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 20A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 200V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 80A
Avalanche Energy Rating (Eas) 252 mJ
Height 2.38mm
Length 6.35mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

PSMN130-200D,118 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 252 mJ.An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2470pF @ 25V is its maximum input capacitance.This device has a continuous drain current (ID) of [20A], which is its maximum continuous current.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 50 ns.Pulsed drain current is maximum rated peak drain current 80A.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Powered by 200V, it supports maximum dual supply voltages.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.Using drive voltage (10V) reduces this device's overall power consumption.

PSMN130-200D,118 Features


the avalanche energy rating (Eas) is 252 mJ
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 80A.
a threshold voltage of 3V

PSMN130-200D,118 Applications


There are a lot of Nexperia USA Inc. PSMN130-200D,118 applications of single MOSFETs transistors.

  • PFC stages, hard switching PWM stages and resonant switching
  • General Purpose Interfacing Switch
  • Server power supplies
  • Motor drives and Uninterruptible Power Supplies
  • Uninterruptible Power Supply
  • Industrial Power Supplies
  • LCD/LED/ PDP TV Lighting
  • Motor Drives and Uninterruptible Power Supples
  • Micro Solar Inverter
  • Power Management Functions

In Stock

Please send RFQ , we will respond immediately.