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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TPWR6003PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerWDFN | 16 Weeks | 30V | 960mW Ta 170W Tc | N-Channel | 10000pF @ 15V | 600μ Ω @ 50A, 10V | 2.1V @ 1mA | 150A Tc | 110nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHJ7N65E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihj7n65et1ge3-datasheets-4814.pdf | PowerPAK® SO-8 | 18 Weeks | No SVHC | 4 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 7.9A | 650V | 2V | 96W Tc | N-Channel | 820pF @ 100V | 598m Ω @ 3.5A, 10V | 4V @ 250μA | 7.9A Tc | 44nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS4D5N08LC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdms4d5n08lc-datasheets-4833.pdf | 8-PowerTDFN | 20 Weeks | yes | 80V | 2.5W Ta 113.6W Tc | N-Channel | 5100pF @ 40V | 4.2m Ω @ 37A, 10V | 2.5V @ 210μA | 17A Ta 116A Tc | 71nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU210PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfr210trrpbf-datasheets-3671.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 1.5Ohm | 3 | yes | EAR99 | AVALANCHE RATED | No | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | 8.2 ns | 17ns | 8.9 ns | 14 ns | 2.6A | 20V | SILICON | DRAIN | SWITCHING | 4V | 2.5W Ta 25W Tc | 95 mJ | 200V | N-Channel | 140pF @ 25V | 1.5 Ω @ 1.6A, 10V | 4V @ 250μA | 2.6A Tc | 8.2nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| FQP2P40-F080 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqp2p40f080-datasheets-4835.pdf | TO-220-3 | 3 | 7 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 1 day ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | Other Transistors | 30 ns | 75ns | 60 ns | 55 ns | 2A | 30V | SILICON | SWITCHING | 400V | 63W Tc | TO-220AB | 2A | 8A | -400V | P-Channel | 350pF @ 25V | 6.5 Ω @ 1A, 10V | 5V @ 250μA | 2A Tc | 13nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| STFI4N62K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfi4n62k3-datasheets-4844.pdf | TO-262-3 Full Pack, I2Pak | 3 | EAR99 | No | STFI4N | Single | 10 ns | 9ns | 19 ns | 29 ns | 3.8A | 30V | 25W Tc | 620V | N-Channel | 550pF @ 50V | 2 Ω @ 1.9A, 10V | 4.5V @ 50μA | 3.8A Tc | 22nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS5672 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdms5672-datasheets-4847.pdf | 60V | 22A | 8-PowerWDFN | 5mm | 750μm | 6mm | Lead Free | 8 | 13 Weeks | 231mg | No SVHC | 11.5MOhm | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Gold | e4 | DUAL | NO LEAD | NOT SPECIFIED | Single | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Power | Not Qualified | 16 ns | 17ns | 8 ns | 22 ns | 10.6A | 20V | 60V | SILICON | 3.2V | 2.5W Ta 78W Tc | 60A | 60V | N-Channel | 2800pF @ 30V | 3.2 V | 11.5m Ω @ 10.6A, 10V | 4V @ 250μA | 10.6A Ta 22A Tc | 45nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||
| SIDR390DP-T1-GE3 | Vishay Siliconix | $1.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sidr390dpt1ge3-datasheets-4760.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8DC | 30V | 6.25W Ta 125W Tc | N-Channel | 10180pF @ 15V | 0.8mOhm @ 20A, 10V | 2V @ 250μA | 69.9A Ta 100A Tc | 153nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM4ND65CI | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm4nd65ci-datasheets-4765.pdf | TO-220-3 Full Pack, Isolated Tab | 28 Weeks | 650V | 41.6W Tc | N-Channel | 596pF @ 50V | 2.6 Ω @ 1.2A, 10V | 3.8V @ 250μA | 4A Tc | 16.8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY01N100D-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 1000V | 1.1W Ta 25W Tc | N-Channel | 100pF @ 25V | 80 Ω @ 50mA, 0V | 4.5V @ 25μA | 400mA Tj | 5.8nC @ 5V | Depletion Mode | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD50N04-5M6_GE3 | Vishay Siliconix | $2.89 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50n045m6ge3-datasheets-3962.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | EAR99 | unknown | 50A | 40V | 71W Tc | N-Channel | 4000pF @ 25V | 5.6m Ω @ 20A, 10V | 3.5V @ 250μA | 50A Tc | 85nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCMT180N65S3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fcmt180n65s3-datasheets-4667.pdf | 4-PowerTSFN | 33 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | 650V | 139W Tc | N-Channel | 1350pF @ 400V | 180m Ω @ 8.5A, 10V | 4.5V @ 1.8mA | 17A Tc | 33nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCU900N60Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-fcu900n60z-datasheets-4784.pdf | TO-251-3 Stub Leads, IPak | 6.8mm | 7.57mm | 2.5mm | Lead Free | 3 | 15 Weeks | 539mg | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | not_compliant | e3 | NOT SPECIFIED | Single | NOT SPECIFIED | 52W | 1 | FET General Purpose Power | 10.9 ns | 5.3ns | 11.9 ns | 33.6 ns | 4.5A | 20V | SILICON | SWITCHING | 600V | 2.5V | 52W Tc | 0.9Ohm | 47.5 mJ | 675V | N-Channel | 710pF @ 25V | 900m Ω @ 2.3A, 10V | 3.5V @ 250μA | 4.5A Tc | 17nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| STF4N52K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Surface Mount, Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu4n52k3-datasheets-4742.pdf | TO-220-3 Full Pack | 7mm | 2.4mm | 6.6mm | Lead Free | 2 | No SVHC | 2.6Ohm | 3 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | GULL WING | STF4N | 3 | Single | 20W | 1 | FET General Purpose Power | R-PSSO-G2 | 8 ns | 7ns | 14 ns | 21 ns | 2.5A | 30V | SILICON | SWITCHING | 3.75V | 20W Tc | TO-252 | 525V | N-Channel | 334pF @ 100V | 2.6 Ω @ 1.25A, 10V | 4.5V @ 50μA | 2.5A Tc | 11nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| SIR104DP-T1-RE3 | Vishay Siliconix | $1.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir104dpt1re3-datasheets-4763.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 100V | 5.4W Ta 100W Tc | N-Channel | 4230pF @ 50V | 6.4mOhm @ 15A, 10V | 3.5V @ 250μA | 18.3A Ta 79A Tc | 84nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIDR140DP-T1-GE3 | Vishay Siliconix | $2.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sidr140dpt1ge3-datasheets-4746.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8DC | 25V | 6.25W Ta 125W Tc | N-Channel | 8150pF @ 10V | 0.67mOhm @ 20A, 10V | 2.1V @ 250μA | 79A Ta 100A Tc | 170nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPU95R2K0P7AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu95r2k0p7akma1-datasheets-4810.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 18 Weeks | 950V | 37W Tc | N-Channel | 330pF @ 400V | 2 Ω @ 1.7A, 10V | 3.5V @ 80μA | 4A Tc | 10nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF2NK60Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf2nk60z-datasheets-4817.pdf | TO-220-3 Full Pack | Lead Free | 3 | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF2N | 3 | Single | 20W | 1 | FET General Purpose Power | 8 ns | 30ns | 25 ns | 22 ns | 1.4A | 30V | SILICON | ISOLATED | SWITCHING | 20W Tc | TO-220AB | 5.6A | 8Ohm | 90 mJ | 600V | N-Channel | 170pF @ 25V | 8 Ω @ 700mA, 10V | 4.5V @ 50μA | 1.4A Tc | 10nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| SIHD5N50D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihd5n50dge3-datasheets-4739.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | 2 | 8 Weeks | 1.437803g | Unknown | 3 | No | GULL WING | 1 | Single | 104W | 1 | FET General Purpose Powers | R-PSSO-G2 | 12 ns | 11ns | 11 ns | 14 ns | 5.3A | 30V | SILICON | DRAIN | SWITCHING | 3V | 104W Tc | TO-252AA | 500V | N-Channel | 325pF @ 100V | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 5.3A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| STU6N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf6n60m2-datasheets-1503.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.2mm | 2.4mm | 26 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STU6N | 1 | Single | 60W | 9.5 ns | 7.4ns | 22.5 ns | 24 ns | 4.5A | 25V | 600V | 60W Tc | 650V | N-Channel | 232pF @ 100V | 1.2 Ω @ 2.25A, 10V | 4V @ 250μA | 4.5A Tc | 13.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| STU4N52K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu4n52k3-datasheets-4742.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | 260 | STU4N | 3 | Single | 45W | 1 | FET General Purpose Power | 8 ns | 7ns | 14 ns | 21 ns | 2.5A | 30V | SILICON | SWITCHING | 3.75V | 45W Tc | TO-220AB | 10A | 110 mJ | 525V | N-Channel | 334pF @ 100V | 2.6 Ω @ 1.25A, 10V | 4.5V @ 50μA | 2.5A Tc | 11nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| FCMT299N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fcmt299n60-datasheets-4823.pdf | 4-PowerTSFN | 33 Weeks | 449.03225mg | 199mOhm | 4 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | 260 | 1 | Single | NOT SPECIFIED | FET General Purpose Power | 19 ns | 9ns | 7 ns | 51 ns | 12A | 20V | 125W Tc | 600V | N-Channel | 1948pF @ 380V | 299m Ω @ 6A, 10V | 3.5V @ 250μA | 12A Ta | 51nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SIHD1K4N60E-GE3 | Vishay Siliconix | $1.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd1k4n60ege3-datasheets-4748.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | TO-252AA | 600V | 63W Tc | N-Channel | 172pF @ 100V | 1.45Ohm @ 500mA, 10V | 5V @ 250μA | 4.2A Tc | 7.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOY66923 | Alpha & Omega Semiconductor Inc. | $0.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-251-3 Stub Leads, IPak | 18 Weeks | 100V | 6.2W Ta 73W Tc | N-Channel | 1725pF @ 50V | 11m Ω @ 20A, 10V | 2.6V @ 250μA | 16.5A Ta 58A Tc | 35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCU600N65S3R0 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fcu600n65s3r0-datasheets-4755.pdf | TO-251-3 Stub Leads, IPak | 15 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | e3 | Tin (Sn) | 650V | 54W Tc | N-Channel | 465pF @ 400V | 600m Ω @ 3A, 10V | 4.5V @ 600μA | 6A Tc | 11nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB7N52K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb7n52k3-datasheets-4643.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 850mOhm | 3 | yes | No | e3 | Matte Tin (Sn) - annealed | SINGLE | GULL WING | 245 | STB7N | 4 | 90W | 1 | FET General Purpose Power | R-PSSO-G2 | 13 ns | 11ns | 19 ns | 36 ns | 6A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 90W Tc | 6.2A | 25A | 525V | N-Channel | 737pF @ 100V | 980m Ω @ 3.1A, 10V | 4.5V @ 50μA | 6A Tc | 34nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| STU65N3LLH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std65n3llh5-datasheets-5023.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 3 | EAR99 | ULTRA-LOW RESISTANCE | unknown | SINGLE | NOT SPECIFIED | STU65N | 3 | NOT SPECIFIED | 50W | 1 | FET General Purpose Powers | 11.2ns | 6 ns | 32.4 ns | 65A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 50W Tc | 260A | 0.0097Ohm | 30V | N-Channel | 1290pF @ 25V | 7.3m Ω @ 32.5A, 10V | 3V @ 250μA | 65A Tc | 8nC @ 4.5V | 4.5V 10V | ±22V | |||||||||||||||||||||||||||||||||||||
| FQU9N25TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqu9n25tu-datasheets-4660.pdf | 250V | 7.4A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 6 Weeks | 343.08mg | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 2.5W | 1 | FET General Purpose Power | 13 ns | 105ns | 45 ns | 25 ns | 7.4A | 30V | SILICON | SWITCHING | 2.5W Ta 55W Tc | 29.6A | 0.42Ohm | 250V | N-Channel | 700pF @ 25V | 420m Ω @ 3.7A, 10V | 5V @ 250μA | 7.4A Tc | 20nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| FQU2N100TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqd2n100tm-datasheets-2237.pdf | 1kV | 1.6A | TO-251-3 Short Leads, IPak, TO-251AA | 6.8mm | 7.57mm | 2.5mm | Lead Free | 3 | 7 Weeks | 343.08mg | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | Tin | No | e3 | Single | 2.5W | 1 | FET General Purpose Power | 13 ns | 30ns | 35 ns | 25 ns | 1.6A | 30V | SILICON | SWITCHING | 1000V | 2.5W Ta 50W Tc | 6.4A | 9Ohm | 1kV | N-Channel | 520pF @ 25V | 9 Ω @ 800mA, 10V | 5V @ 250μA | 1.6A Tc | 15.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| FQU2N90TU-WS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fqu2n90tuws-datasheets-4692.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 6 Weeks | 343.08mg | 3 | ACTIVE (Last Updated: 1 week ago) | yes | No | e3 | Tin (Sn) | Single | 2.5W | 1 | FET General Purpose Power | 15 ns | 35ns | 30 ns | 20 ns | 1.7A | 30V | 2.5W Ta 50W Tc | 900V | N-Channel | 500pF @ 25V | 7.2 Ω @ 850mA, 10V | 5V @ 250μA | 1.7A Tc | 15nC @ 10V | 10V | ±30V |
