STU65N3LLH5

MOSFET (Metal Oxide) N-Channel Tube 7.3m Ω @ 32.5A, 10V ±22V 1290pF @ 25V 8nC @ 4.5V TO-251-3 Short Leads, IPak, TO-251AA


  • Manufacturer: STMicroelectronics
  • NO: 761-STU65N3LLH5
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: pdf
  • Stock: 3764
  • Description: MOSFET (Metal Oxide) N-Channel Tube 7.3m Ω @ 32.5A, 10V ±22V 1290pF @ 25V 8nC @ 4.5V TO-251-3 Short Leads, IPak, TO-251AA (Kg)

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SPECIFICATIONS

Parameters
ECCN Code EAR99
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STU65N
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 50W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 50W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.3m Ω @ 32.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1290pF @ 25V
Current - Continuous Drain (Id) @ 25°C 65A Tc
Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V
Rise Time 11.2ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±22V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 32.4 ns
Continuous Drain Current (ID) 65A
Drain-source On Resistance-Max 0.0097Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 260A
RoHS Status ROHS3 Compliant
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series STripFET™ V
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3

In Stock

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