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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI4966DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si4966dyt1ge3-datasheets-2310.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5494mm | 3.9878mm | Lead Free | 8 | 15 Weeks | 186.993455mg | Unknown | 25mOhm | 8 | EAR99 | e3 | MATTE TIN | 2W | GULL WING | 260 | SI4966 | 8 | 2 | Dual | 40 | 2W | 2 | Not Qualified | 40 ns | 40ns | 40 ns | 90 ns | 7.1A | 12V | SILICON | METAL-OXIDE SEMICONDUCTOR | 40A | 20V | 2 N-Channel (Dual) | 600 mV | 25m Ω @ 7.1A, 4.5V | 1.5V @ 250μA | 50nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SI4816DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4816dyt1ge3-datasheets-2280.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | Unknown | 22MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1W | DUAL | GULL WING | 260 | SI4816 | 8 | 2 | 40 | 7.7W | 2 | FET General Purpose Power | 15 ns | 5ns | 12 ns | 44 ns | 5.3A | 20V | SILICON | COMPLEX | METAL-OXIDE SEMICONDUCTOR | 1W 1.25W | 30V | 2 N-Channel (Half Bridge) | 2 V | 22m Ω @ 6.3A, 10V | 2V @ 250μA | 5.3A 7.7A | 12nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SI4942DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si4942dyt1ge3-datasheets-2263.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | No SVHC | 21mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | GULL WING | 260 | SI4942 | 8 | Dual | 40 | 1.1W | 2 | FET General Purpose Powers | 4nF | 13 ns | 10ns | 10 ns | 31 ns | 5.3A | 20V | 40V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3V | 40V | 2 N-Channel (Dual) | 3 V | 21m Ω @ 7.4A, 10V | 3V @ 250μA | 32nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SI4562DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4562dyt1ge3-datasheets-2293.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 186.993455mg | Unknown | 25mOhm | 8 | yes | EAR99 | No | e4 | Silver (Ag) | 2W | DUAL | GULL WING | 260 | SI4562 | 8 | 2 | 30 | 2W | 1 | Other Transistors | 27 ns | 32ns | 45 ns | 95 ns | 7.1A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 600mV | 40A | 20V | N and P-Channel | 600 mV | 25m Ω @ 7.1A, 4.5V | 1.6V @ 250μA | 50nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| SIA922EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia922edjt1ge3-datasheets-5889.pdf | PowerPAK® SC-70-6 Dual | 6 | 15 Weeks | 6 | yes | EAR99 | No | 1.9W | Dual | 2 | FET General Purpose Power | 60ns | 45 ns | 25 ns | 4.4A | 12V | SILICON | DRAIN | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 7.8W | 4.5A | 0.072Ohm | 30V | 2 N-Channel (Dual) | 64m Ω @ 3A, 4.5V | 1.4V @ 250μA | 4.5A | 12nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA914ADJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia914adjt1ge3-datasheets-5983.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 6 | 15 Weeks | 28.009329mg | Unknown | 6 | EAR99 | No | 7.8W | Dual | 1.9W | 2 | 7 ns | 20ns | 5 ns | 25 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.043Ohm | 20V | 2 N-Channel (Dual) | 470pF @ 10V | 43m Ω @ 3.7A, 4.5V | 900mV @ 250μA | 12.5nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ1006P-2 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-vq1006p2-datasheets-6115.pdf | PDIP | 14 | 14 | no | EAR99 | No | e0 | TIN LEAD | 2W | DUAL | 1.3W | 4 | 14-DIP | 400mA | 20V | SILICON | 90V | 90V | METAL-OXIDE SEMICONDUCTOR | 2A | 3.5Ohm | 10 pF | 4 N-Channel | 60pF @ 25V | 10ns | 10ns | 4.5 Ω @ 1A, 10V | 2.5V @ 1mA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ1001P-2 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-vq1001p2-datasheets-6118.pdf | PDIP | 14 | 18 Weeks | 14 | EAR99 | 8541.29.00.75 | NO | 2W | DUAL | 4 | Not Qualified | 14-DIP | 830mA | SILICON | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 2W | 0.83A | 3A | 1Ohm | 35 pF | 4 N-Channel | 110pF @ 15V | 30ns | 30ns | 1.75 Ω @ 200mA, 5V | 2.5V @ 1mA | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ1006P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-vq1006p2-datasheets-6115.pdf | PDIP | 15 Weeks | 14 | No | 2W | 1.3W | 4 | 14-DIP | 60pF | 400mA | 20V | 90V | 2W | 4.5Ohm | 90V | 4 N-Channel | 60pF @ 25V | 4.5Ohm @ 1A, 10V | 2.5V @ 1mA | 400mA | Logic Level Gate | 4.5 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ1001P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-vq1001p2-datasheets-6118.pdf | Lead Free | 14 | No | 2W | 2W | 4 | 14-DIP | 110pF | 830mA | 20V | 30V | 2W | 1.75Ohm | 4 N-Channel | 110pF @ 15V | 1.75Ohm @ 200mA, 5V | 2.5V @ 1mA | 830mA | Logic Level Gate | 1.75 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4618DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4618dyt1e3-datasheets-9868.pdf | 8-SOIC (0.154, 3.90mm Width) | 15 Weeks | 506.605978mg | No SVHC | 8 | No | 2.35W | 2 | Dual | 2 | 8-SO | 1.535nF | 11.4A | 16V | 30V | 1V | 1.98W 4.16W | 10mOhm | 30V | 2 N-Channel (Half Bridge) | 1535pF @ 15V | 17mOhm @ 8A, 10V | 2.5V @ 1mA | 8A 15.2A | 44nC @ 10V | Standard | 17 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA920DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sia920djt1ge3-datasheets-6134.pdf | PowerPAK® SC-70-6 Dual | 6 | 15 Weeks | 28.009329mg | 6 | EAR99 | No | 1.9W | 6 | 2 | Dual | 1.9W | 2 | FET General Purpose Powers | 5 ns | 12ns | 7 ns | 20 ns | 4.5A | 5V | SILICON | DRAIN | SWITCHING | 8V | 8V | METAL-OXIDE SEMICONDUCTOR | 7.8W | 2 N-Channel (Dual) | 470pF @ 4V | 27m Ω @ 5.3A, 4.5V | 700mV @ 250μA | 7.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI7270DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7270dpt1ge3-datasheets-6137.pdf | PowerPAK® SO-8 Dual | 6 | 13 Weeks | No SVHC | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 17.8W | C BEND | 260 | 8 | Dual | 30 | 3.6W | 2 | FET General Purpose Power | R-PDSO-C6 | 10 ns | 8ns | 8 ns | 18 ns | 8A | 20V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 1.2V | 8A | 35A | 30V | 2 N-Channel (Dual) | 900pF @ 15V | 21m Ω @ 8A, 10V | 2.8V @ 250μA | 21nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| VQ2001P | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-vq2001p-datasheets-6139.pdf | PDIP | 13 Weeks | 1.200007g | 14 | No | 2W | 4 | 2W | 4 | 150pF | 600mA | 20V | 30V | 2W | 2Ohm | 30V | 4 P-Channel | 150pF @ 15V | 2Ohm @ 1A, 12V | 4.5V @ 1mA | 600mA | Standard | 2 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ3001P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-vq3001pe3-datasheets-6145.pdf | 15 Weeks | 14 | No | 2W | 2W | 4 | 110pF | 600mA | 20V | 30V | 2W | 2 N and 2 P-Channel | 110pF @ 15V | 1Ohm @ 1A, 12V | 2.5V @ 1mA | 850mA 600mA | Standard | 1 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ1006P | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-vq1006p2-datasheets-6115.pdf | PDIP | 13 Weeks | 1.200007g | 14 | no | No | e0 | Tin/Lead (Sn/Pb) | 2W | 14 | 4 | 2W | FET General Purpose Power | 14-DIP | 400mA | 20V | 90V | METAL-OXIDE SEMICONDUCTOR | 90V | 4 N-Channel | 60pF @ 25V | 4.5 Ω @ 1A, 10V | 2.5V @ 1mA | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ1001P | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | Non-RoHS Compliant | 2004 | /files/vishaysiliconix-vq1001p2-datasheets-6118.pdf | CDIP | 15 Weeks | 1.200007g | 14 | No | 2W | 4 | 1.3W | 14-DIP | 110pF | 830mA | 20V | 30V | 2W | 1Ohm | 30V | 4 N-Channel | 110pF @ 15V | 1.75Ohm @ 200mA, 5V | 2.5V @ 1mA | 830mA | Logic Level Gate | 1.75 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ962EP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sqj962ept1ge3-datasheets-6203.pdf | PowerPAK® SO-8 Dual | Lead Free | 4 | Unknown | 60mOhm | 8 | yes | EAR99 | No | 25W | SINGLE | GULL WING | 260 | 8 | 2 | Dual | 40 | 2 | FET General Purpose Power | R-PSSO-G4 | 5 ns | 11ns | 6 ns | 16 ns | 8A | 20V | SILICON | DRAIN | 60V | 60V | METAL-OXIDE SEMICONDUCTOR | 2V | 8A | 5 mJ | 2 N-Channel (Dual) | 475pF @ 25V | 60m Ω @ 4.3A, 10V | 2.5V @ 250μA | 14nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SIA915DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia915djt1ge3-datasheets-6219.pdf | PowerPAK® SC-70-6 Dual | 6 | 12 Weeks | 28.009329mg | Unknown | 6 | EAR99 | No | 6.5W | 6 | 2 | Dual | 1.9W | 2 | Other Transistors | 35 ns | 25ns | 10 ns | 15 ns | 3.7A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | -1V | 4.5A | 0.087Ohm | 2 P-Channel (Dual) | 275pF @ 15V | -1 V | 87m Ω @ 2.9A, 10V | 2.2V @ 250μA | 4.5A | 9nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| VQ2001P-2 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-vq2001p-datasheets-6139.pdf | 14-DIP | 14 | 14 | no | EAR99 | No | e0 | TIN LEAD | 2W | DUAL | 2W | 4 | 600mA | 20V | SILICON | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 0.6A | 2A | 2Ohm | 60 pF | 4 P-Channel | 150pF @ 15V | 30ns | 30ns | 2 Ω @ 1A, 12V | 4.5V @ 1mA | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ914DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-siz914dtt1ge3-datasheets-6251.pdf | 8-PowerWDFN | 6mm | 750μm | 5mm | 6 | 13 Weeks | 8 | EAR99 | unknown | 100W | NO LEAD | SIZ914 | 2 | Dual | 2 | R-PDSO-N6 | 40 ns | 127ns | 19 ns | 40 ns | 40A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 22.7W 100W | 16A | 0.0064Ohm | 5 mJ | 30V | 2 N-Channel (Half Bridge) | 1208pF @ 15V | 6.4m Ω @ 19A, 10V | 2.4V @ 250μA | 16A 40A | 26nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| SIA936EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia936edjt1ge3-datasheets-6242.pdf | PowerPAK® SC-70-6 Dual | 28.009329mg | Unknown | 27mOhm | 6 | EAR99 | 7.8W | NOT SPECIFIED | SIA936ED | 2 | Dual | NOT SPECIFIED | 20 ns | 20ns | 20 ns | 45 ns | 4.5A | 1.3V | 20V | 1.3V | 20V | 2 N-Channel (Dual) | 34m Ω @ 4A, 4.5V | 1.3V @ 250μA | 17nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA88BDP-T1-GE3 | Vishay Siliconix | $0.43 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira88bdpt1ge3-datasheets-6913.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 3.8W Ta 17W Tc | N-Channel | 680pF @ 15V | 6.83mOhm @ 10A, 10V | 2.4V @ 250μA | 19A Ta 40A Tc | 19nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4830CDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4830cdyt1ge3-datasheets-1925.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 15 Weeks | 506.605978mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | 2.9W | DUAL | GULL WING | 260 | SI4830 | 8 | 2 | 30 | 2 | 17 ns | 12ns | 12 ns | 18 ns | 8A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 7.5A | 30V | 2 N-Channel (Half Bridge) | 950pF @ 15V | 20m Ω @ 8A, 10V | 3V @ 1mA | 25nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SI5997DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si5997dut1ge3-datasheets-6859.pdf | PowerPAK® ChipFET™ Dual | 6 | 84.99187mg | No SVHC | 8 | EAR99 | unknown | 10.4W | C BEND | NOT SPECIFIED | 8 | Dual | NOT SPECIFIED | 2.3W | 2 | Other Transistors | Not Qualified | R-PDSO-C6 | 10 ns | 5.1A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | -1.2V | 6A | 0.054Ohm | 2 P-Channel (Dual) | 430pF @ 15V | 54m Ω @ 3A, 10V | 2.4V @ 250μA | 6A | 14.5nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| SI3483DDV-T1-GE3 | Vishay Siliconix | $0.42 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3483ddvt1ge3-datasheets-6957.pdf | SOT-23-6 Thin, TSOT-23-6 | 14 Weeks | 6-TSOP | 30V | 2W Ta 3W Tc | P-Channel | 580pF @ 15V | 31.2mOhm @ 5A, 10V | 2.2V @ 250μA | 6.4A Ta 8A Tc | 14.5nC @ 10V | 4.5V 10V | +16V, -20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8497DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8497dbt2e1-datasheets-7015.pdf | 6-UFBGA | 21 Weeks | 6 | No | 1 | Single | 6-microfoot | 1.32nF | 50 ns | 10ns | 22 ns | 75 ns | 13A | 12V | 30V | 2.77W Ta 13W Tc | 53mOhm | P-Channel | 1320pF @ 15V | 53mOhm @ 1.5A, 4.5V | 1.1V @ 250μA | 13A Tc | 49nC @ 10V | 53 mΩ | 2V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA28BDP-T1-GE3 | Vishay Siliconix | $0.09 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira28bdpt1ge3-datasheets-6955.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 3.8W Ta 17W Tc | N-Channel | 582pF @ 15V | 7.5mOhm @ 10A, 10V | 2.4V @ 250μA | 18A Ta 38A Tc | 14nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA471DJ-T1-GE3 | Vishay Siliconix | $0.56 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia471djt1ge3-datasheets-7162.pdf | PowerPAK® SC-70-6 | 14 Weeks | PowerPAK® SC-70-6 Single | 30V | 3.5W Ta 19.2W Tc | P-Channel | 1170pF @ 15V | 14mOhm @ 10A, 10V | 2.5V @ 250μA | 12.9A Ta 30.3A Tc | 27.8nC @ 10V | 4.5V 10V | +16V, -20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISH615ADN-T1-GE3 | Vishay Siliconix | $0.26 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sish615adnt1ge3-datasheets-7153.pdf | PowerPAK® 1212-8SH | 14 Weeks | PowerPAK® 1212-8SH | 20V | 3.7W Ta 52W Tc | P-Channel | 5590pF @ 10V | 4.4mOhm @ 20A, 10V | 1.5V @ 250μA | 22.1A Ta 35A Tc | 183nC @ 10V | 2.5V 10V | ±12V |
