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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SQ3419EV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sq3419evt1ge3-datasheets-3842.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 12 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 40V | 5W Tc | MO-193AA | 6.9A | 0.058Ohm | 100 pF | P-Channel | 990pF @ 20V | 58m Ω @ 2.5A, 10V | 2.5V @ 250μA | 6.9A Tc | 11.3nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2316BDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si2316bdst1ge3-datasheets-3870.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 50MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1 | FET General Purpose Powers | 20 ns | 65ns | 65 ns | 11 ns | 4.5A | 20V | SILICON | SWITCHING | 3V | 1.25W Ta 1.66W Tc | 30V | N-Channel | 350pF @ 15V | 50m Ω @ 3.9A, 10V | 3V @ 250μA | 4.5A Tc | 9.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SI3443BDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si3443bdvt1e3-datasheets-3274.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 990.6μm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 60mOhm | 6 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.1W | 1 | Other Transistors | 22 ns | 35ns | 25 ns | 45 ns | 3.6A | 12V | SILICON | 20V | -1.4V | 1.1W Ta | -20V | P-Channel | -1.4 V | 60m Ω @ 4.7A, 4.5V | 1.4V @ 250μA | 3.6A Ta | 9nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||
| SI4447ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4447adyt1ge3-datasheets-3889.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 14 Weeks | 506.605978mg | No SVHC | 8 | No | 1 | Single | 2.5W | 2 | 8-SO | 970pF | 7 ns | 12ns | 9 ns | 30 ns | 7.2A | 20V | 40V | -1.2V | 4.2W Tc | 45mOhm | -40V | P-Channel | 970pF @ 20V | 45mOhm @ 5A, 10V | 2.5V @ 250μA | 7.2A Tc | 38nC @ 10V | 45 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI2323DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2323dst1e3-datasheets-7974.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 19 Weeks | 1.437803g | Unknown | 39mOhm | 3 | No | 1 | Single | 750mW | 1 | SOT-23-3 (TO-236) | 1.02nF | 25 ns | 43ns | 43 ns | 71 ns | -4.7A | 8V | 20V | -1V | 750mW Ta | 39mOhm | -20V | P-Channel | 1020pF @ 10V | -1 V | 39mOhm @ 4.7A, 4.5V | 1V @ 250μA | 3.7A Ta | 19nC @ 4.5V | 39 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| SI8499DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si8499dbt2e1-datasheets-4241.pdf | 6-UFBGA | Lead Free | 6 | 21 Weeks | No SVHC | 32MOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | BALL | 260 | 6 | 1 | Single | 30 | 2.77W | 1 | Other Transistors | 10ns | 30 ns | 55 ns | 7.8A | 12V | SILICON | SWITCHING | 20V | -500mV | 2.77W Ta 13W Tc | 20A | -20V | P-Channel | 1300pF @ 10V | 32m Ω @ 1.5A, 4.5V | 1.3V @ 250μA | 16A Tc | 30nC @ 5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||
| SI5459DU-T1-GE3 | Vishay Siliconix | $18.69 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5459dut1ge3-datasheets-4353.pdf | PowerPAK® ChipFET™ Single | Lead Free | 3 | 14 Weeks | Unknown | 52mOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 8 | 1 | Single | 30 | 3.5W | 1 | R-XDSO-N3 | 6 ns | 15ns | 9 ns | 26 ns | -8A | 12V | SILICON | DRAIN | SWITCHING | 20V | -1.4V | 3.5W Ta 10.9W Tc | 6.7A | 20A | -20V | P-Channel | 665pF @ 10V | 52m Ω @ 6.7A, 4.5V | 1.4V @ 250μA | 8A Tc | 26nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||
| SI2303CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si2303cdst1ge3-datasheets-4410.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 190mOhm | 3 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1W | 1 | Other Transistors | Not Qualified | 150°C | 4 ns | 37ns | 37 ns | 11 ns | -2.7A | 20V | SILICON | SWITCHING | 30V | -3V | 1W Ta 2.3W Tc | -30V | P-Channel | 155pF @ 15V | -3 V | 190m Ω @ 1.9A, 10V | 3V @ 250μA | 2.7A Tc | 8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SISH625DN-T1-GE3 | Vishay Siliconix | $0.52 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sish625dnt1ge3-datasheets-4498.pdf | PowerPAK® 1212-8SH | 14 Weeks | PowerPAK® 1212-8SH | 30V | 3.7W Ta 52W Tc | P-Channel | 4427pF @ 15V | 7mOhm @ 15A, 10V | 2.5V @ 250μA | 17.3A Ta 35A Tc | 126nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA446DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-sia446djt1ge3-datasheets-4622.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 14 Weeks | Unknown | 6 | EAR99 | e3 | MATTE TIN | DUAL | NO LEAD | NOT SPECIFIED | SIA446 | 1 | Single | NOT SPECIFIED | 1 | S-PDSO-N3 | 5 ns | 13ns | 10 ns | 10 ns | 7.7A | 20V | SILICON | DRAIN | SWITCHING | 3.5V | 3.5W Ta 19W Tc | 2.5 mJ | 150V | N-Channel | 230pF @ 75V | 177m Ω @ 3A, 10V | 3.5V @ 250μA | 7.7A Tc | 8nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SIA445EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia445edjt1ge3-datasheets-4626.pdf | PowerPAK® SC-70-6 | 2.05mm | 800μm | 2.05mm | Lead Free | 3 | 14 Weeks | Unknown | 16.5mOhm | 6 | EAR99 | No | DUAL | 1 | Single | 3.5W | 1 | 150°C | S-PDSO-N3 | 25 ns | 55 ns | -11.8A | 12V | SILICON | DRAIN | SWITCHING | 20V | -500mV | 3.5W Ta 19W Tc | 50A | -20V | P-Channel | 2130pF @ 10V | 16.5m Ω @ 7A, 4.5V | 1.2V @ 250μA | 12A Tc | 72nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| SI2315BDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2315bdst1e3-datasheets-6333.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | 3 | 14 Weeks | 1.437803g | Unknown | 3 | yes | EAR99 | Tin | No | 3A | e3 | 12V | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | Other Transistors | 15 ns | 35ns | 35 ns | 50 ns | -3A | 8V | SILICON | -900mV | 750mW Ta | 0.05Ohm | -12V | P-Channel | 715pF @ 6V | -900 mV | 50m Ω @ 3.85A, 4.5V | 900mV @ 250μA | 3A Ta | 15nC @ 4.5V | 4.5V | ±8V | |||||||||||||||||||||||||||||||||||
| SI2328DS-T1-GE3 | Vishay Siliconix | $2.81 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2328dst1ge3-datasheets-5062.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 730mW | 1 | FET General Purpose Powers | 7 ns | 11ns | 10 ns | 9 ns | 1.15A | 20V | SILICON | 100V | 4V | 730mW Ta | 0.25Ohm | N-Channel | 250m Ω @ 1.5A, 10V | 4V @ 250μA | 1.15A Ta | 5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SI3459BDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si3459bdvt1ge3-datasheets-5068.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 216MOhm | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2W | 1 | Other Transistors | 5 ns | 12ns | 10 ns | 18 ns | -2.2A | 20V | SILICON | SWITCHING | 60V | -3V | 2W Ta 3.3W Tc | 0.0022A | 30 pF | P-Channel | 350pF @ 30V | -3 V | 216m Ω @ 2.2A, 10V | 3V @ 250μA | 2.9A Tc | 12nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SI2316DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si2316dst1e3-datasheets-5080.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 50mOhm | 3 | yes | EAR99 | No | 2A | e3 | Matte Tin (Sn) | 30V | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 700mW | 1 | FET General Purpose Power | 9 ns | 9ns | 9 ns | 14 ns | 3.4A | 20V | SILICON | SWITCHING | 700mW Ta | N-Channel | 215pF @ 15V | 800 mV | 50m Ω @ 3.4A, 10V | 800mV @ 250μA (Min) | 2.9A Ta | 7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI1499DH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si1499dht1e3-datasheets-4944.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 14 Weeks | 7.512624mg | Unknown | 78mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 6 | 1 | Single | 40 | 2.5W | 1 | Other Transistors | 8 ns | 40ns | 60 ns | 46 ns | 1.6A | 5V | SILICON | SWITCHING | 8V | 8V | -800mV | 2.5W Ta 2.78W Tc | P-Channel | 650pF @ 4V | -800 mV | 78m Ω @ 2A, 4.5V | 800mV @ 250μA | 1.6A Tc | 16nC @ 4.5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||
| SI3473CDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si3473cdvt1ge3-datasheets-5198.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | 6 | 14 Weeks | 19.986414mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2W | 1 | Other Transistors | 10 ns | 15ns | 35 ns | 62 ns | 8A | 8V | SILICON | SWITCHING | 12V | 2W Ta 4.2W Tc | 8A | 0.022Ohm | -12V | P-Channel | 2010pF @ 6V | 22m Ω @ 8.1A, 4.5V | 1V @ 250μA | 8A Tc | 65nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| SI4128DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4128dyt1ge3-datasheets-4479.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 24mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 5W | 1 | 15 ns | 12ns | 10 ns | 15 ns | 10.9A | 20V | SILICON | SWITCHING | 1V | 2.4W Ta 5W Tc | 30V | N-Channel | 435pF @ 15V | 24m Ω @ 7.8A, 10V | 2.5V @ 250μA | 10.9A Ta | 12nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SIZ728DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-siz728dtt1ge3-datasheets-5670.pdf | 6-PowerPair™ | 6mm | 750μm | 3.73mm | Lead Free | 6 | 15 Weeks | Unknown | 6 | EAR99 | No | 48W | C BEND | SIZ728 | 6 | 2 | Dual | 2 | FET General Purpose Power | 18ns | 10 ns | 35A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1V | 27W 48W | 70A | 0.0077Ohm | 25V | 2 N-Channel (Half Bridge) | 890pF @ 12.5V | 7.7m Ω @ 18A, 10V | 2.2V @ 250μA | 16A 35A | 26nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SIZ790DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-siz790dtt1ge3-datasheets-5709.pdf | 6-PowerPair™ | 6mm | 750μm | 3.73mm | 6 | 15 Weeks | Unknown | 6 | EAR99 | No | 48W | DUAL | C BEND | SIZ790 | 6 | 2 | 2 | FET General Purpose Power | 15ns | 10 ns | 35A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.1V | 27W 48W | 70A | 0.0093Ohm | 13 mJ | 30V | 2 N-Channel (Half Bridge) | 830pF @ 15V | 9.3m Ω @ 15A, 10V | 2.2V @ 250μA | 16A 35A | 24nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SI5999EDU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5999edut1ge3-datasheets-5713.pdf | PowerPAK® ChipFET™ Dual | Lead Free | 6 | Unknown | 59mOhm | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | 10.4W | C BEND | 260 | SI5999 | 8 | 2 | Dual | 30 | 2.3W | 2 | Other Transistors | Not Qualified | R-PDSO-C6 | 17 ns | 21ns | 13 ns | 26 ns | 5A | 12V | SILICON | DRAIN | SWITCHING | N-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 6A | -20V | 2 P-Channel (Dual) | 496pF @ 10V | -600 mV | 59m Ω @ 3.5A, 4.5V | 1.5V @ 250μA | 6A | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| SIZ900DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-siz900dtt1ge3-datasheets-5706.pdf | 6-PowerPair™ | 6mm | 750μm | 5mm | 8 | 15 Weeks | Unknown | 8 | EAR99 | No | 100W | DUAL | C BEND | SIZ900 | 8 | 2 | 2 | FET General Purpose Power | 10 ns | 24A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 1.2V | 48W 100W | 90A | 30V | 2 N-Channel (Half Bridge) | 1830pF @ 15V | 7.2m Ω @ 19.4A, 10V | 2.4V @ 250μA | 24A 28A | 45nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| SIZ916DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-siz916dtt1ge3-datasheets-5724.pdf | 8-PowerWDFN | 6mm | 750μm | 5mm | 15 Weeks | Unknown | 8 | EAR99 | No | 100W | SIZ916 | 2 | Dual | 27 ns | 83ns | 10 ns | 66 ns | 40A | 2.4V | 1.2V | 22.7W 100W | 30V | 2 N-Channel (Half Bridge) | 1208pF @ 15V | 6.4m Ω @ 19A, 10V | 2.4V @ 250μA | 16A 40A | 26nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9936BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si9936bdyt1ge3-datasheets-2479.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 186.993455mg | 35mOhm | 8 | No | 1.1W | SI9936 | 2 | Dual | 1.1W | 2 | 8-SO | 10 ns | 15ns | 15 ns | 25 ns | 6A | 20V | 30V | 1.1W | 35mOhm | 30V | 2 N-Channel (Dual) | 35mOhm @ 6A, 10V | 3V @ 250μA | 4.5A | 13nC @ 10V | Logic Level Gate | 35 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI7322ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-si7322adnt1ge3-datasheets-4913.pdf | PowerPAK® 1212-8 | 1.17mm | 14 Weeks | EAR99 | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.3W | 150°C | 6 ns | 9 ns | 5.4A | 20V | 26W Tc | 100V | N-Channel | 360pF @ 50V | 57m Ω @ 5.5A, 10V | 4V @ 250μA | 15.1A Tc | 13nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4539ADY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4539adyt1ge3-datasheets-2229.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 506.605978mg | 36mOhm | 8 | No | 30W | SI4539 | 2 | 1.1W | 2 | 8-SO | 435pF | 7 ns | 10ns | 10 ns | 40 ns | 16A | 20V | 30V | 1.1W | 53mOhm | 30V | N and P-Channel | 36mOhm @ 5.9A, 10V | 1V @ 250μA (Min) | 4.4A 3.7A | 20nC @ 10V | Logic Level Gate | 24 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI4532ADY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/vishaysiliconix-si4532adyt1ge3-datasheets-1111.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 15 Weeks | 186.993455mg | Unknown | 80mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | 1.2W | DUAL | GULL WING | 260 | SI4532 | 8 | 2 | 40 | 2W | 2 | 8 ns | 9ns | 10 ns | 21 ns | 4.9A | 20V | SILICON | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1V | 1.13W 1.2W | 3.7A | 30V | N and P-Channel | 1 V | 53m Ω @ 4.9A, 10V | 1V @ 250μA (Min) | 3.7A 3A | 16nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||
| SIA437DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sia437djt1ge3-datasheets-5129.pdf | PowerPAK® SC-70-6 | 3 | 14 Weeks | Unknown | 6 | yes | EAR99 | No | DUAL | 3.5W | 1 | S-PDSO-N3 | 12.6A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | -400mV | 3.5W Ta 19W Tc | 29.7A | P-Channel | 2340pF @ 10V | 14.5m Ω @ 8A, 4.5V | 900mV @ 250μA | 29.7A Tc | 90nC @ 8V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4542DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4542dyt1ge3-datasheets-2215.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 25mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2W | GULL WING | 260 | SI4542 | 8 | Dual | 30 | 2W | 2 | Other Transistors | 10ns | 25 ns | 55 ns | 5.7A | 20V | SILICON | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 6.9A | 40A | 30V | N and P-Channel | 25m Ω @ 6.9A, 10V | 1V @ 250μA (Min) | 50nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| SI4920DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4920dyt1ge3-datasheets-2296.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | Lead Free | 8 | 25mOhm | 8 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | 2W | GULL WING | 260 | SI4920 | 8 | Dual | 40 | 2W | 2 | FET General Purpose Powers | Not Qualified | 790pF | 12 ns | 10ns | 15 ns | 60 ns | 6.9A | 20V | SILICON | METAL-OXIDE SEMICONDUCTOR | 40A | 30V | 2 N-Channel (Dual) | 25m Ω @ 6.9A, 10V | 1V @ 250μA (Min) | 23nC @ 5V | Logic Level Gate |
