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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIA911DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia911djt1e3-datasheets-4827.pdf | PowerPAK® SC-70-6 Dual | 6 | No | 6.5W | SIA911 | Dual | 1.9W | 2 | PowerPAK® SC-70-6 Dual | 355pF | 10ns | 10 ns | 20 ns | -4.5A | 8V | 20V | 6.5W | 94mOhm | 20V | 2 P-Channel (Dual) | 355pF @ 10V | 94mOhm @ 2.8A, 4.5V | 1V @ 250μA | 4.5A | 12.8nC @ 8V | Standard | 94 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7983DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7983dpt1e3-datasheets-4787.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | 506.605978mg | 17mOhm | 1.4W | SI7983 | 2 | Dual | PowerPAK® SO-8 Dual | 35 ns | 60ns | 190 ns | 390 ns | 7.7A | 8V | 20V | 1.4W | 17mOhm | 2 P-Channel (Dual) | 17mOhm @ 12A, 4.5V | 1V @ 600μA | 7.7A | 74nC @ 4.5V | Logic Level Gate | 17 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4946EY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sq4946eyt1e3-datasheets-2453.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 186.993455mg | 8 | yes | EAR99 | unknown | e3 | MATTE TIN | 1.7W | GULL WING | 260 | 8 | 2 | 40 | 1.7W | 2 | FET General Purpose Power | Not Qualified | 13 ns | 11ns | 11 ns | 36 ns | 4.5A | 20V | SILICON | SWITCHING | 60V | METAL-OXIDE SEMICONDUCTOR | 2.4W | 30A | 0.055Ohm | 60V | 2 N-Channel (Dual) | 55m Ω @ 4.5A, 10V | 3V @ 250μA | 30nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||
| SI7925DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7925dnt1e3-datasheets-2425.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | 42mOhm | 1.3W | 2 | Dual | PowerPAK® 1212-8 Dual | 20 ns | 50ns | 50 ns | 70 ns | 4.8A | 8V | 12V | 1.3W | 42mOhm | 2 P-Channel (Dual) | 42mOhm @ 6.5A, 4.5V | 1V @ 250μA | 4.8A | 12nC @ 4.5V | Logic Level Gate | 42 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7909DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7909dnt1e3-datasheets-2419.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | 37mOhm | 1.3W | 2 | Dual | PowerPAK® 1212-8 Dual | 25 ns | 45ns | 85 ns | 90 ns | 5.3A | 8V | 12V | 1.3W | 37mOhm | 2 P-Channel (Dual) | 37mOhm @ 7.7A, 4.5V | 1V @ 700μA | 5.3A | 24nC @ 4.5V | Logic Level Gate | 37 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9936BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si9936bdyt1ge3-datasheets-2479.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 186.993455mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | GULL WING | 250 | SI9936 | 8 | 2 | Dual | 40 | 2 | FET General Purpose Powers | 10 ns | 15ns | 10 ns | 25 ns | 4.5A | 20V | SILICON | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1V | 0.035Ohm | 2 N-Channel (Dual) | 35m Ω @ 6A, 10V | 3V @ 250μA | 13nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SIZ700DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-siz700dtt1ge3-datasheets-2485.pdf | 6-PowerPair™ | 6mm | 750μm | 3.73mm | 6 | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | 2.8W | C BEND | 260 | 6 | 2 | Dual | 40 | 2.8W | 2 | FET General Purpose Power | R-XDSO-C6 | 12 ns | 8ns | 10 ns | 47 ns | 16A | 16V | SILICON | DRAIN | 20V | METAL-OXIDE SEMICONDUCTOR | 2.2V | 2.36W 2.8W | 13.1A | 60A | 20V | 2 N-Channel (Half Bridge) | 1300pF @ 10V | 8.6m Ω @ 15A, 10V | 2.2V @ 250μA | 35nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||
| SMMB911DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-smmb911dkt1ge3-datasheets-2487.pdf | PowerPAK® SC-75-6L Dual | 6 | No SVHC | 6 | yes | EAR99 | No | 3.1W | C BEND | 260 | 6 | 40 | 3.1W | 2 | Other Transistors | 12 ns | 45ns | 31 ns | 10 ns | 2.6A | 8V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | -1V | 1.5A | 0.295Ohm | 2 P-Channel (Dual) | 115pF @ 10V | 295m Ω @ 1.5A, 4.5V | 1V @ 250μA | 4nC @ 8V | Standard | |||||||||||||||||||||||||||||||||||||||||
| SI4967DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4967dyt1e3-datasheets-2305.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | No | e3 | PURE MATTE TIN | 2W | GULL WING | 260 | Dual | 30 | 2 | Other Transistors | R-PDSO-G8 | 25 ns | 95 ns | 210 ns | 7.5A | 8V | SILICON | 12V | METAL-OXIDE SEMICONDUCTOR | MS-012AA | 30A | 0.023Ohm | -12V | 2 P-Channel (Dual) | 23m Ω @ 7.5A, 4.5V | 450mV @ 250μA (Min) | 55nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| SI4965DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4965dyt1ge3-datasheets-2286.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 186.993455mg | 21mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2W | GULL WING | 260 | 8 | 2 | Dual | 40 | 2W | 2 | Other Transistors | 35 ns | 45ns | 90 ns | 170 ns | 8A | 8V | SILICON | METAL-OXIDE SEMICONDUCTOR | 8A | 30A | -8V | 2 P-Channel (Dual) | 21m Ω @ 8A, 4.5V | 450mV @ 250μA (Min) | 55nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||
| SI7964DP-T1-GE3 | Vishay Siliconix | $1.47 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7964dpt1e3-datasheets-4803.pdf | PowerPAK® SO-8 Dual | 6 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.4W | C BEND | 260 | SI7964 | 8 | Dual | 30 | 1.4W | 2 | FET General Purpose Powers | R-XDSO-C6 | 20 ns | 15ns | 15 ns | 50 ns | 6.1A | 20V | SILICON | DRAIN | 60V | METAL-OXIDE SEMICONDUCTOR | 40A | 0.023Ohm | 31 mJ | 60V | 2 N-Channel (Dual) | 23m Ω @ 9.6A, 10V | 4.5V @ 250μA | 65nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||
| SIZ910DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-siz910dtt1ge3-datasheets-2518.pdf | 8-PowerWDFN | 6mm | 750μm | 5mm | 6 | 8 | EAR99 | No | 100W | SIZ910 | 8 | 2 | Dual | 2 | FET General Purpose Power | R-PDSO-N6 | 35ns | 12 ns | 40A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 48W 100W | 100A | 0.0075Ohm | 31 mJ | 30V | 2 N-Channel (Half Bridge) | 1500pF @ 15V | 5.8m Ω @ 20A, 10V | 2.2V @ 250μA | 40nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SI6955ADQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6955adqt1ge3-datasheets-2330.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 8 | 157.991892mg | 8 | EAR99 | e3 | MATTE TIN | 830mW | GULL WING | 260 | 8 | Dual | 40 | 830mW | 2 | Not Qualified | 8 ns | 9ns | 9 ns | 21 ns | 2.5A | 20V | SILICON | 30V | METAL-OXIDE SEMICONDUCTOR | -30V | 2 P-Channel (Dual) | 80m Ω @ 2.9A, 10V | 1V @ 250μA (Min) | 8nC @ 5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||
| SI5975DC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5975dct1ge3-datasheets-2325.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 84.99187mg | 8 | 1.1W | 2 | Dual | 1.1W | 1206-8 ChipFET™ | 10 ns | 20ns | 20 ns | 31 ns | 3.1A | 8V | 12V | 1.1W | 86mOhm | -12V | 2 P-Channel (Dual) | 86mOhm @ 3.1A, 4.5V | 450mV @ 1mA (Min) | 3.1A | 9nC @ 4.5V | Logic Level Gate | 86 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI5906DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si5906dut1ge3-datasheets-2735.pdf | PowerPAK® ChipFET™ Dual | Lead Free | 6 | Unknown | 31MOhm | 8 | EAR99 | e3 | PURE MATTE TIN | 10.4W | NO LEAD | 260 | 8 | Dual | 30 | 10.4W | 2 | Not Qualified | R-XDSO-N6 | 10 ns | 90ns | 50 ns | 12 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 2.2V | 6A | 30V | 2 N-Channel (Dual) | 300pF @ 15V | 31m Ω @ 4.8A, 10V | 2.2V @ 250μA | 8.6nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| SIZ920DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-siz920dtt1ge3-datasheets-2719.pdf | 8-PowerWDFN | 6mm | 750μm | 5mm | 6 | Unknown | 8 | EAR99 | No | 100W | C BEND | SIZ920 | 2 | Dual | 1 | R-PDSO-C6 | 40A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 1.2V | 39W 100W | 70A | 30V | 2 N-Channel (Half Bridge) | 1260pF @ 15V | 7.1m Ω @ 18.9A, 10V | 2.5V @ 250μA | 35nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||
| SI7940DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7940dpt1ge3-datasheets-5439.pdf | PowerPAK® SO-8 Dual | Lead Free | 6 | 17mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7940 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Power | R-XDSO-C6 | 30 ns | 50ns | 50 ns | 60 ns | 7.6A | 8V | SILICON | DRAIN | 12V | METAL-OXIDE SEMICONDUCTOR | 12V | 2 N-Channel (Dual) | 17m Ω @ 11.8A, 4.5V | 1.5V @ 250μA | 17nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||
| SI4310BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4310bdyt1e3-datasheets-2886.pdf | 14-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 186.993455mg | 8 | 1.47W | 2 | Dual | 2 | 14-SOIC | 2.37nF | 17 ns | 12ns | 12 ns | 53 ns | 9.8A | 20V | 30V | 1.14W 1.47W | 8.5mOhm | 30V | 2 N-Channel (Dual) | 2370pF @ 15V | 11mOhm @ 10A, 10V | 3V @ 250μA | 7.5A 9.8A | 18nC @ 4.5V | Logic Level Gate | 11 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| SI8472DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si8472dbt2e1-datasheets-2941.pdf | 4-UFBGA | Lead Free | 4 | 33 Weeks | 44MOhm | 6 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | BALL | 4 | 1 | Single | 1 | FET General Purpose Powers | S-PBGA-B4 | 4.5A | 8V | SILICON | SWITCHING | 780mW Ta | 20V | N-Channel | 630pF @ 10V | 44m Ω @ 1.5A, 4.5V | 900mV @ 250μA | 18nC @ 8V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIA485DJ-T1-GE3 | Vishay Siliconix | $2.87 |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia485djt1ge3-datasheets-3092.pdf | PowerPAK® SC-70-6 | 3 | 14 Weeks | EAR99 | unknown | YES | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 15.6W Tc | 1.6A | 2A | 2.7Ohm | 0.1 mJ | P-Channel | 155pF @ 75V | 2.6 Ω @ 500mA, 10V | 4.5V @ 250μA | 1.6A Tc | 6.3nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI2323DDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2323ddst1ge3-datasheets-3131.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 30 | 960mW | 1 | 150°C | 8 ns | 22ns | 11 ns | 58 ns | -4.1A | 8V | SILICON | SWITCHING | 20V | -1V | 960mW Ta 1.7W Tc | -20V | P-Channel | 1160pF @ 10V | 39m Ω @ 4.1A, 4.5V | 1V @ 250μA | 5.3A Tc | 36nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| SI3442BDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si3442bdvt1e3-datasheets-3334.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 57mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 20mW | 1 | FET General Purpose Power | 35 ns | 50ns | 15 ns | 20 ns | 3A | 12V | SILICON | 1.8V | 860mW Ta | 3A | 20V | N-Channel | 295pF @ 10V | 1.8 V | 57m Ω @ 4A, 4.5V | 1.8V @ 250μA | 3A Ta | 5nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||
| SI2343DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2343dst1ge3-datasheets-3348.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 53mOhm | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1 | Other Transistors | Not Qualified | 10 ns | 15ns | 20 ns | 31 ns | -4A | 20V | SILICON | SWITCHING | 30V | -3V | 750mW Ta | -30V | P-Channel | 540pF @ 15V | -3 V | 53m Ω @ 4A, 10V | 3V @ 250μA | 3.1A Ta | 21nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| SI2306BDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si2306bdst1e3-datasheets-3482.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 47mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.25W | 1 | FET General Purpose Power | 7 ns | 12ns | 12 ns | 14 ns | 3.16A | 20V | SILICON | 3V | 750mW Ta | 30V | N-Channel | 305pF @ 15V | 47m Ω @ 3.5A, 10V | 3V @ 250μA | 3.16A Ta | 4.5nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SI2343CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si2343cdst1ge3-datasheets-3500.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 45MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.25W | 1 | Other Transistors | 30 ns | 8 ns | 18 ns | 5.9A | 20V | SILICON | SWITCHING | 30V | -1.2V | 1.25W Ta 2.5W Tc | -30V | P-Channel | 590pF @ 15V | -1.2 V | 45m Ω @ 4.2A, 10V | 2.5V @ 250μA | 5.9A Tc | 21nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SI2324DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2324dst1ge3-datasheets-3632.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 14 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | 30 | 1.25W | 1 | FET General Purpose Power | 6 ns | 10ns | 6 ns | 10 ns | 2.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.25W Ta 2.5W Tc | 100V | N-Channel | 190pF @ 50V | 234m Ω @ 1.5A, 10V | 2.9V @ 250μA | 2.3A Tc | 10.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SISA18ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sisa18adnt1ge3-datasheets-3655.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | Unknown | 8 | EAR99 | No | DUAL | C BEND | Single | 19.8W | 1 | FET General Purpose Power | S-PDSO-C5 | 10ns | 7 ns | 15 ns | 38.3A | -16V | SILICON | DRAIN | SWITCHING | 1.2V | 3.2W Ta 19.8W Tc | 70A | 0.0075Ohm | 5 mJ | 30V | N-Channel | 1000pF @ 15V | 7.5m Ω @ 10A, 10V | 2.4V @ 250μA | 38.3A Tc | 21.5nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||
| SI3469DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si3469dvt1e3-datasheets-3277.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 30mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 1.14W | 1 | Other Transistors | 10 ns | 12ns | 12 ns | 50 ns | -6.7A | 20V | SILICON | SWITCHING | -3V | 1.14W Ta | 5A | P-Channel | -3 V | 30m Ω @ 6.7A, 10V | 3V @ 250μA | 5A Ta | 30nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SI7113ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si7113adnt1ge3-datasheets-3802.pdf | PowerPAK® 1212-8 | 1.17mm | 5 | 14 Weeks | EAR99 | unknown | YES | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.5W | 1 | 150°C | S-PDSO-F5 | 10 ns | 20 ns | -3.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 27.8W Tc | 20A | -100V | P-Channel | 515pF @ 50V | 132m Ω @ 3.8A, 10V | 2.6V @ 250μA | 10.8A Tc | 16.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SIS412DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sis412dnt1ge3-datasheets-3828.pdf | PowerPAK® 1212-8 | 3.05mm | 1.17mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 24MOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 15.6W | 1 | FET General Purpose Power | 150°C | S-XDSO-C5 | 5 ns | 12ns | 10 ns | 15 ns | 8.7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1V | 3.2W Ta 15.6W Tc | 30A | 30V | N-Channel | 435pF @ 15V | 1 V | 24m Ω @ 7.8A, 10V | 2.5V @ 250μA | 12A Tc | 12nC @ 10V | 4.5V 10V | ±20V |
