Products
Manufacturer
RFQ
NEWS
ContactVishay Siliconix(12746)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SIHF540STRL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf540spbf-datasheets-3481.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8 Weeks | D2PAK (TO-263) | 100V | 3.7W Ta 150W Tc | N-Channel | 1700pF @ 25V | 77mOhm @ 17A, 10V | 4V @ 250μA | 28A Tc | 72nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHFB11N50A-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfb11n50apbf-datasheets-1825.pdf | TO-220-3 | 3 | 3 | yes | No | e3 | Matte Tin (Sn) | SINGLE | 3 | 1 | FET General Purpose Power | 14 ns | 35ns | 28 ns | 32 ns | 11A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 170W Tc | TO-220AB | 44A | 0.52Ohm | 275 mJ | N-Channel | 1423pF @ 25V | 520m Ω @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 52nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IRLR120TR | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlr120trlpbf-datasheets-9045.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 13 Weeks | 270mOhm | 3 | no | EAR99 | AVALANCHE RATED | No | GULL WING | 240 | 3 | Single | 30 | 1 | FET General Purpose Power | R-PSSO-G2 | 9.8 ns | 64ns | 27 ns | 21 ns | 7.7A | 10V | SILICON | DRAIN | SWITCHING | 2.5W Ta 42W Tc | 210 mJ | 100V | N-Channel | 490pF @ 25V | 270m Ω @ 4.6A, 5V | 2V @ 250μA | 7.7A Tc | 12nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||
| SQM120N04-1M9_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm120n041m9ge3-datasheets-3853.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | TO-263 (D2Pak) | 40V | 300W Tc | N-Channel | 8790pF @ 25V | 1.9mOhm @ 30A, 10V | 3.5V @ 250μA | 120A Tc | 270nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4862DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si4862dyt1e3-datasheets-3887.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.6W | 1 | FET General Purpose Power | 42 ns | 38ns | 38 ns | 120 ns | 17A | 8V | SILICON | SWITCHING | 1.6W Ta | 0.0033Ohm | 16V | N-Channel | 3.3m Ω @ 25A, 4.5V | 600mV @ 250μA (Min) | 17A Ta | 70nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| SQM120N04-1M7_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm120n041m7ge3-datasheets-3952.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | 1 | TO-263 (D2Pak) | 17.35nF | 120A | 40V | 300W Tc | N-Channel | 17350pF @ 25V | 1.7mOhm @ 30A, 10V | 3.5V @ 250μA | 120A Tc | 310nC @ 10V | 1.7 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQM120N10-09_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm120n1009ge3-datasheets-3968.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | TO-263 (D2Pak) | 100V | 375W Tc | N-Channel | 8645pF @ 25V | 9.5mOhm @ 30A, 10V | 3.5V @ 250μA | 120A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF740ASTRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf740alpbf-datasheets-5440.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 550MOhm | 3 | No | 1 | Single | D2PAK | 1.03nF | 10 ns | 35ns | 22 ns | 24 ns | 10A | 30V | 400V | 3.1W Ta 125W Tc | 550mOhm | N-Channel | 1030pF @ 25V | 550mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 36nC @ 10V | 550 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| SIHP17N60D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sihp17n60dge3-datasheets-4134.pdf | TO-220-3 | 3 | 13 Weeks | 6.000006g | 3 | No | SINGLE | 1 | 1 | FET General Purpose Powers | 22 ns | 56ns | 30 ns | 37 ns | 17A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 277.8W Tc | TO-220AB | 48A | 600V | N-Channel | 1780pF @ 100V | 340m Ω @ 8A, 10V | 5V @ 250μA | 17A Tc | 90nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| SIHP17N60D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp17n60dge3-datasheets-4134.pdf | TO-220-3 | 3 | 8 Weeks | 6.000006g | 3 | No | 3 | 1 | Single | 1 | FET General Purpose Powers | 22 ns | 56ns | 30 ns | 37 ns | 17A | 30V | SILICON | 600V | 600V | 277.8W Tc | TO-220AB | 48A | N-Channel | 1780pF @ 100V | 340m Ω @ 8A, 10V | 5V @ 250μA | 17A Tc | 90nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI4368DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4368dyt1e3-datasheets-9508.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | 186.993455mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1 | 25 ns | 20ns | 41 ns | 172 ns | 17A | 12V | SILICON | SWITCHING | 30V | 30V | 1.6W Ta | 0.0032Ohm | N-Channel | 8340pF @ 15V | 3.2m Ω @ 25A, 10V | 1.8V @ 250μA | 17A Ta | 80nC @ 4.5V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| IRF840LCSTRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf840lclpbf-datasheets-5874.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 12 Weeks | 1.437803g | 3 | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 30 | 1 | FET General Purpose Power | S-PSSO-G2 | 12 ns | 25ns | 19 ns | 27 ns | 8A | 30V | SILICON | DRAIN | SWITCHING | 500V | 500V | 3.1W Ta 125W Tc | 8A | 0.85Ohm | N-Channel | 1100pF @ 25V | 850m Ω @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 39nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IRF9640LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9640strlpbf-datasheets-0346.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.01mm | 4.7mm | 8 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 3W | 1 | I2PAK | 1.2nF | 13 ns | 43ns | 38 ns | 39 ns | -11A | 20V | 200V | 200V | 4V | 3W Ta 125W Tc | 500mOhm | -200V | P-Channel | 1200pF @ 25V | 4 V | 500mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 44nC @ 10V | 500 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SUM110N04-04-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum110n0404e3-datasheets-4270.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 6 Weeks | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | Single | 3.75W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 115ns | 85 ns | 75 ns | 110A | 20V | SILICON | SWITCHING | 3.75W Ta 250W Tc | 350A | 0.0035Ohm | 40V | N-Channel | 6800pF @ 25V | 3.5m Ω @ 30A, 10V | 4V @ 250μA | 110A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SQD40N06-25L-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 21 Weeks | 22mOhm | yes | EAR99 | 1.4W | GULL WING | 260 | 4 | Single | 40 | 1.4W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 9ns | 9 ns | 28 ns | 30A | 20V | SILICON | DRAIN | 100A | 60V | N-Channel | 1800pF @ 25V | 22m Ω @ 20A, 10V | 3V @ 250μA | 30A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SIE812DF-T1-E3 | Vishay Siliconix | $9.87 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie812dft1ge3-datasheets-6819.pdf | 10-PolarPAK® (L) | 6.15mm | 800μm | 5.16mm | Lead Free | 4 | 14 Weeks | No SVHC | 2.6MOhm | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | 1 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-XDSO-N4 | 20 ns | 15ns | 10 ns | 60 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 2.3V | 5.2W Ta 125W Tc | 33A | 40V | N-Channel | 8300pF @ 20V | 2.6m Ω @ 25A, 10V | 3V @ 250μA | 60A Tc | 170nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| IRLR024 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlu024pbf-datasheets-5123.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 3 | No | Single | 2.5W | 1 | D-Pak | 870pF | 11 ns | 110ns | 41 ns | 23 ns | 14A | 10V | 60V | 2.5W Ta 42W Tc | 100mOhm | N-Channel | 870pF @ 25V | 100mOhm @ 8.4A, 5V | 2V @ 250μA | 14A Tc | 18nC @ 5V | 100 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SQV120N06-4M7L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/vishaysiliconix-sqv120n064m7lge3-datasheets-4375.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 14.86mm | 3 | 12 Weeks | EAR99 | unknown | NO | SINGLE | NOT SPECIFIED | 1 | NOT SPECIFIED | 250W | 1 | 175°C | R-PSIP-T3 | 16 ns | 46 ns | 120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 250W Tc | 300A | 0.0047Ohm | 320 mJ | 60V | N-Channel | 8800pF @ 25V | 4.7m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 230nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SQD45N05-20L-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishay-sqd50n0511lge3-datasheets-7527.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 49 Weeks | yes | EAR99 | GULL WING | 260 | 4 | Single | 40 | 2.5W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 10ns | 7 ns | 32 ns | 50A | 20V | SILICON | DRAIN | 2.5W Ta 75W Tc | 0.02Ohm | 50V | N-Channel | 1800pF @ 25V | 18m Ω @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 43nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SIHF23N60E-GE3 | Vishay Siliconix | $13.86 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihf23n60ege3-datasheets-4470.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 6.000006g | Unknown | 3 | No | 1 | Single | 1 | 22 ns | 38ns | 34 ns | 66 ns | 23A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 600V | 35W Tc | TO-220AB | N-Channel | 2418pF @ 100V | 158m Ω @ 12A, 10V | 4V @ 250μA | 23A Tc | 95nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IRLZ44STRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-irlz44spbf-datasheets-3836.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.02mm | Lead Free | 11 Weeks | 1.437803g | 28MOhm | 220 | No | 1 | Single | 3.7W | 1 | D2PAK | 3.3nF | 17 ns | 230ns | 110 ns | 42 ns | 50A | 10V | 60V | 3.7W Ta 150W Tc | 28mOhm | 60V | N-Channel | 3300pF @ 25V | 28mOhm @ 31A, 5V | 2V @ 250μA | 50A Tc | 66nC @ 5V | 28 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||
| IRLR024TR | Vishay Siliconix | $0.16 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlu024pbf-datasheets-5123.pdf | 60V | 14A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 21 Weeks | 2 | No | Single | 2.5W | D-Pak | 870pF | 11 ns | 110ns | 41 ns | 23 ns | 14A | 10V | 60V | 2.5W Ta 42W Tc | 100mOhm | 60V | N-Channel | 870pF @ 25V | 100mOhm @ 8.4A, 5V | 2V @ 250μA | 14A Tc | 18nC @ 5V | 100 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||
| SUD50N06-08H-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0608he3-datasheets-4499.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.223mm | 2 | 13 Weeks | 3 | yes | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 136W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 28 ns | 13ns | 10 ns | 50 ns | 93A | 20V | SILICON | DRAIN | SWITCHING | 3W Ta 136W Tc | 50A | 100A | 0.0078Ohm | 125 mJ | 60V | N-Channel | 7000pF @ 25V | 7.8m Ω @ 20A, 10V | 4.5V @ 250μA | 93A Tc | 145nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRLIZ44G | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irliz44gpbf-datasheets-1320.pdf | 60V | 30A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Contains Lead | 21 Weeks | 6.000006g | 3 | No | 1 | Single | TO-220-3 | 3.3nF | 17 ns | 230ns | 110 ns | 42 ns | 30A | 10V | 60V | 48W Tc | 28mOhm | 60V | N-Channel | 3300pF @ 25V | 28mOhm @ 18A, 5V | 2V @ 250μA | 30A Tc | 66nC @ 5V | 28 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||
| SIHB15N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb15n65ege3-datasheets-4563.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 18 Weeks | yes | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 34W | 1 | R-PSSO-G2 | 24ns | 25 ns | 48 ns | 15A | 4V | SILICON | SWITCHING | 650V | 650V | 34W Tc | 38A | 0.28Ohm | 286 mJ | N-Channel | 1640pF @ 100V | 280m Ω @ 8A, 10V | 4V @ 250μA | 15A Tc | 96nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFD024 | Vishay Siliconix | $5.31 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd024pbf-datasheets-1303.pdf | 60V | 2.5A | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Contains Lead | 13 Weeks | 4 | No | 1 | 1.3W | 4-DIP, Hexdip, HVMDIP | 640pF | 13 ns | 58ns | 58 ns | 25 ns | 2.5A | 20V | 60V | 1.3W Ta | 100mOhm | 60V | N-Channel | 640pF @ 25V | 100mOhm @ 1.5A, 10V | 4V @ 250μA | 2.5A Ta | 25nC @ 10V | 100 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRLR024TRL | Vishay Siliconix | $3.38 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlu024pbf-datasheets-5123.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 49 Weeks | 3 | No | D-Pak | 870pF | 11 ns | 110ns | 41 ns | 23 ns | 14A | 10V | 60V | 2.5W Ta 42W Tc | N-Channel | 870pF @ 25V | 100mOhm @ 8.4A, 5V | 2V @ 250μA | 14A Tc | 18nC @ 5V | 100 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB18N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb18n60ege3-datasheets-4621.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 179W Tc | 18A | 45A | 0.202Ohm | 204 mJ | N-Channel | 1640pF @ 100V | 202m Ω @ 9A, 10V | 4V @ 250μA | 18A Tc | 92nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLU024 | Vishay Siliconix | $0.16 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlu024pbf-datasheets-5123.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6 Weeks | 3 | No | Single | 2.5W | 1 | TO-251AA | 870pF | 11 ns | 110ns | 41 ns | 23 ns | 14A | 10V | 60V | 2.5W Ta 42W Tc | 100mOhm | 60V | N-Channel | 870pF @ 25V | 100mOhm @ 8.4A, 5V | 2V @ 250μA | 14A Tc | 18nC @ 5V | 100 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ46L | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfz46l-datasheets-4782.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 1.8nF | 50A | 50V | 3.7W Ta 150W Tc | N-Channel | 1800pF @ 25V | 24mOhm @ 32A, 10V | 4V @ 250μA | 50A Tc | 66nC @ 10V | 24 mΩ | 10V | ±20V |
