| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRC644PBF | Vishay Siliconix | $2.70 |
Min: 1 Mult: 1 |
download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irc644pbf-datasheets-9835.pdf | TO-220-5 | 10.67mm | 9.02mm | 4.83mm | 5 | 3.000003g | EAR99 | unknown | SINGLE | 260 | 5 | 1 | 40 | 1 | Not Qualified | R-PSFM-T5 | 12 ns | 37ns | 29 ns | 49 ns | 14A | 20V | SILICON | SINGLE | DRAIN | SWITCHING | 250V | 250V | 125W Tc | 56A | 0.28Ohm | 550 mJ | N-Channel | 1200pF @ 25V | 280m Ω @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 65nC @ 10V | Current Sensing | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF734PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf734-datasheets-9477.pdf | 450V | 4.9A | TO-220-3 | Lead Free | 3 | Single | TO-220AB | 680pF | 22ns | 21 ns | 40 ns | 4.9A | 20V | 450V | 74W Tc | 1.2Ohm | 450V | N-Channel | 680pF @ 25V | 1.2Ohm @ 2.9A, 10V | 4V @ 250μA | 4.9A Tc | 45nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD010PBF | Vishay Siliconix | $4.20 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd010-datasheets-8430.pdf | 4-DIP (0.300, 7.62mm) | Lead Free | 111 Weeks | Unknown | 200mOhm | 4 | No | 1W | 4-DIP, Hexdip, HVMDIP | 250pF | 33ns | 23 ns | 12 ns | 1.7A | 50V | 4V | 1W Tc | 200mOhm | 50V | N-Channel | 250pF @ 25V | 200mOhm @ 860mA, 10V | 4V @ 250μA | 1.7A Tc | 13nC @ 10V | 200 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC20LPBF | Vishay Siliconix | $7.75 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbc20strlpbf-datasheets-2593.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | Lead Free | 2.387001g | 4.4Ohm | No | 1 | Single | TO-262-3 | 350pF | 10 ns | 23ns | 25 ns | 30 ns | 2.2A | 20V | 600V | 3.1W Ta 50W Tc | 4.4Ohm | N-Channel | 350pF @ 25V | 4.4Ohm @ 1.3A, 10V | 4V @ 250μA | 2.2A Tc | 18nC @ 10V | 4.4 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRC630PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irc630pbf-datasheets-9925.pdf | TO-220-5 | 5 | 9A | 200V | 74W Tc | N-Channel | 800pF @ 25V | 400m Ω @ 5.4A, 10V | 4V @ 250μA | 9A Tc | 43nC @ 10V | Current Sensing | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF640LPBF | Vishay Siliconix | $0.32 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf640spbf-datasheets-2368.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.65mm | 4.7mm | 2.387001g | 3 | No | 1 | Single | 130W | 1 | TO-262-3 | 1.3nF | 14 ns | 51ns | 36 ns | 45 ns | 18A | 20V | 200V | 3.1W Ta 130W Tc | 180mOhm | 200V | N-Channel | 1300pF @ 25V | 180mOhm @ 11A, 10V | 4V @ 250μA | 18A Tc | 70nC @ 10V | 180 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRC634PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irc634pbf-datasheets-9938.pdf | 250V | 8.1A | TO-220-5 | 10.67mm | 9.02mm | 4.83mm | Lead Free | 5 | 3.000003g | EAR99 | unknown | SINGLE | 260 | 5 | 1 | 40 | 74W | 1 | Not Qualified | R-PSFM-T5 | 9.6 ns | 21ns | 19 ns | 42 ns | 8.1A | 20V | SILICON | SINGLE | DRAIN | SWITCHING | 74W Tc | 32A | 0.45Ohm | 250V | N-Channel | 770pF @ 25V | 450m Ω @ 4.9A, 10V | 4V @ 250μA | 8.1A Tc | 41nC @ 10V | Current Sensing | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IRC830PBF | Vishay Siliconix | $2.75 |
Min: 1 Mult: 1 |
download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irc830pbf-datasheets-9945.pdf | TO-220-5 | 10.67mm | 9.02mm | 4.83mm | 5 | 3.000003g | unknown | SINGLE | 260 | 5 | 1 | 40 | 1 | Not Qualified | R-PSFM-T5 | 8.2 ns | 16ns | 16 ns | 42 ns | 4.5A | 20V | SILICON | SINGLE | DRAIN | SWITCHING | 74W Tc | 280 mJ | 500V | N-Channel | 610pF @ 25V | 1.5 Ω @ 2.7A, 10V | 4V @ 250μA | 4.5A Tc | 38nC @ 10V | Current Sensing | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFI744GPBF | Vishay Siliconix | $0.26 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfi744g-datasheets-8677.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 6.000006g | Unknown | 3 | 1 | Single | TO-220-3 | 1.4nF | 8.7 ns | 28ns | 27 ns | 58 ns | 4.9A | 20V | 450V | 4V | 40W Tc | 630mOhm | N-Channel | 1400pF @ 25V | 630mOhm @ 2.9A, 10V | 4V @ 250μA | 4.9A Tc | 80nC @ 10V | 630 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFI734GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfi734gpbf-datasheets-9976.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 6.000006g | 3 | 1 | Single | 35W | 1 | TO-220-3 | 680pF | 5.9 ns | 22ns | 21 ns | 40 ns | 3.4A | 20V | 450V | 35W Tc | 1.2Ohm | N-Channel | 680pF @ 25V | 1.2Ohm @ 2A, 10V | 4V @ 250μA | 3.4A Tc | 45nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFB17N60KPBF | Vishay Siliconix | $1.48 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfb17n60k-datasheets-5318.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | 1 | Single | 340W | 1 | TO-220AB | 2.7nF | 25 ns | 82ns | 32 ns | 38 ns | 17A | 30V | 600V | 340W Tc | 420mOhm | N-Channel | 2700pF @ 25V | 420mOhm @ 10A, 10V | 5V @ 250μA | 17A Tc | 99nC @ 10V | 420 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRLU120PBF | Vishay Siliconix | $0.22 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlr120trlpbf-datasheets-9045.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | 3 | 329.988449mg | 3 | yes | EAR99 | AVALANCHE RATED | No | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Power | 9.8 ns | 64ns | 27 ns | 21 ns | 7.7A | 10V | SILICON | DRAIN | SWITCHING | 100V | 2.5W Ta 42W Tc | 0.27Ohm | N-Channel | 490pF @ 25V | 270m Ω @ 4.6A, 5V | 2V @ 250μA | 7.7A Tc | 12nC @ 5V | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||
| IRFBA22N50APBF | Vishay Siliconix | $2.89 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfba22n50apbf-datasheets-0053.pdf | 500V | 24A | Super-220™ | Lead Free | 3 | No SVHC | 230Ohm | 3 | AVALANCHE RATED | unknown | e3 | MATTE TIN | 260 | 3 | Single | 40 | 340W | 1 | FET General Purpose Power | Not Qualified | 66ns | 44 ns | 46 ns | 24A | 30V | 500V | SILICON | DRAIN | SWITCHING | 340W Tc | 96A | 500V | N-Channel | 3400pF @ 25V | 4 V | 230m Ω @ 13.8A, 10V | 4V @ 250μA | 24A Tc | 115nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IRC730PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | HEXFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irc730pbf-datasheets-0095.pdf | TO-220-5 | 10.67mm | 9.02mm | 4.83mm | 5 | 3.000003g | unknown | e3 | MATTE TIN | SINGLE | 260 | 5 | 1 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T5 | 18 ns | 15ns | 14 ns | 38 ns | 5.5A | 20V | SILICON | SINGLE | DRAIN | SWITCHING | 74W Tc | 22A | 1Ohm | 400V | N-Channel | 700pF @ 25V | 1 Ω @ 3.3A, 10V | 4V @ 250μA | 5.5A Tc | 38nC @ 10V | Current Sensing | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF644NSTRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf644nspbf-datasheets-8681.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 250V | 150W Tc | N-Channel | 1060pF @ 25V | 240mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 54nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR320TRRPBF | Vishay Siliconix | $1.34 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu320pbf-datasheets-8190.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | 1.8Ohm | 3 | No | 1 | Single | D-Pak | 350pF | 10 ns | 14ns | 13 ns | 30 ns | 3.1A | 20V | 400V | 2.5W Ta 42W Tc | 1.8Ohm | N-Channel | 350pF @ 25V | 1.8Ohm @ 1.9A, 10V | 4V @ 250μA | 3.1A Tc | 20nC @ 10V | 1.8 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SIE864DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie864dft1ge3-datasheets-2866.pdf | 10-PolarPAK® (U) | 4 | 21 Weeks | 10 | yes | EAR99 | e3 | PURE MATTE TIN | DUAL | NO LEAD | 260 | 10 | Single | 30 | 25W | 1 | FET General Purpose Power | Not Qualified | R-PDSO-N4 | 45A | SILICON | DRAIN SOURCE | SWITCHING | 5.2W Ta 25W Tc | 23A | 0.0073Ohm | 31 mJ | 30V | N-Channel | 1510pF @ 15V | 5.6m Ω @ 20A, 10V | 2V @ 250μA | 45A Tc | 38nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFBC30ALPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfbc30astrlpbf-datasheets-5227.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | 8 Weeks | 2.387001g | Unknown | 3 | No | 1 | Single | I2PAK | 510pF | 9.8 ns | 13ns | 12 ns | 19 ns | 3.6A | 30V | 600V | 4.5V | 74W Tc | 2.2Ohm | N-Channel | 510pF @ 25V | 2.2Ohm @ 2.2A, 10V | 4.5V @ 250μA | 3.6A Tc | 23nC @ 10V | 2.2 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| SIHD7N60ET5-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd7n60et5ge3-datasheets-2905.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | TO-252AA | 600V | 78W Tc | N-Channel | 680pF @ 100V | 600mOhm @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD7N60ET4-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd7n60et5ge3-datasheets-2905.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | 3 | GULL WING | 1 | R-PSSO-G2 | 13 ns | 13ns | 14 ns | 24 ns | 7A | 30V | SILICON | DRAIN | SWITCHING | 600V | 609V | 78W Tc | TO-252AA | 7A | 18A | 0.6Ohm | N-Channel | 680pF @ 100V | 600m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI4413CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4413cdyt1ge3-datasheets-7853.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 506.605978mg | 8 | 3W | 1 | 8-SO | -15A | 30V | 9.5mOhm | 30V | P-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHU7N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihu7n60ege3-datasheets-3032.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 18 Weeks | 329.988449mg | Unknown | 3 | No | 1 | Single | 78W | 1 | 13 ns | 13ns | 14 ns | 24 ns | 7A | 20V | SILICON | DRAIN | SWITCHING | 600V | 609V | 2V | 78W Tc | 7A | 0.6Ohm | N-Channel | 680pF @ 100V | 600m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 40nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| SI4427BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4427bdyt1e3-datasheets-7261.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | Unknown | 19.5mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.5W | 1 | 12 ns | 15ns | 110 ns | 242 ns | -12.6A | 12V | -30V | SILICON | 30V | -600mV | 1.5W Ta | 9.7A | -30V | P-Channel | -1.4 V | 10.5m Ω @ 12.6A, 10V | 1.4V @ 250μA | 9.7A Ta | 70nC @ 4.5V | 10V | ±12V | |||||||||||||||||||||||||||||||
| SQJ401EP-T2_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj401ept2ge3-datasheets-3075.pdf | PowerPAK® SO-8 | 12 Weeks | PowerPAK® SO-8 | 12V | 83W Tc | P-Channel | 10015pF @ 6V | 6mOhm @ 15A, 4.5V | 1.5V @ 250μA | 32A Tc | 164nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF820LPBF | Vishay Siliconix | $6.02 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.01mm | 4.7mm | 3 | 12 Weeks | 6.000006g | 3 | yes | No | 1 | Single | 1 | 8 ns | 8.6ns | 16 ns | 33 ns | 2.5A | 20V | SILICON | DRAIN | 3.1W Ta 50W Tc | TO-220AB | 3Ohm | 500V | N-Channel | 360pF @ 25V | 3 Ω @ 1.5A, 10V | 4V @ 250μA | 2.5A Tc | 24nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SQJ431EP-T2_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj431ept2ge3-datasheets-3151.pdf | PowerPAK® SO-8 | 12 Weeks | PowerPAK® SO-8 | 200V | 83W Tc | P-Channel | 4355pF @ 25V | 213mOhm @ 3.8A, 10V | 3.5V @ 250μA | 12A Tc | 106nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7742DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7742dpt1ge3-datasheets-3097.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 30 | 5.4W | 1 | FET General Purpose Powers | R-XDSO-C5 | 43 ns | 18ns | 23 ns | 50 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 5.4W Ta 83W Tc | 0.0035Ohm | N-Channel | 5300pF @ 15V | 3.5m Ω @ 20A, 10V | 2.7V @ 250μA | 60A Tc | 115nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IRF9Z14LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf9z14spbf-datasheets-3262.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.65mm | 4.7mm | 8 Weeks | 2.387001g | 3 | No | 1 | Single | I2PAK | 270pF | 11 ns | 63ns | 31 ns | 10 ns | 6.7A | 20V | 60V | 3.7W Ta 43W Tc | 500mOhm | P-Channel | 270pF @ 25V | 500mOhm @ 4A, 10V | 4V @ 250μA | 6.7A Tc | 12nC @ 10V | 500 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFR430ATRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu430apbf-datasheets-5314.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 11 Weeks | 1.437803g | 3 | No | e3 | MATTE TIN | GULL WING | 260 | 3 | 1 | Single | 40 | 110W | 1 | R-PSSO-G2 | 8.7 ns | 27ns | 16 ns | 17 ns | 5A | 30V | SILICON | DRAIN | SWITCHING | 110W Tc | 5A | 20A | 500V | N-Channel | 490pF @ 25V | 1.7 Ω @ 3A, 10V | 4.5V @ 250μA | 5A Tc | 24nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IRFR9020TRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfu9020pbf-datasheets-5922.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 1.437803g | 280MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | TIN | GULL WING | 260 | 3 | 1 | Single | 40 | 42W | 1 | R-PSSO-G2 | 8.2 ns | 67ns | 25 ns | 12 ns | -9.9A | 20V | SILICON | DRAIN | SWITCHING | 50V | 50V | 42W Tc | 40A | 250 mJ | P-Channel | 490pF @ 25V | 280m Ω @ 5.7A, 10V | 4V @ 250μA | 9.9A Tc | 14nC @ 10V | 10V | ±20V |
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