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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFBF30 | Vishay Siliconix | $0.69 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbf30pbf-datasheets-9527.pdf | TO-220-3 | 6 Weeks | 3 | No | Single | TO-220AB | 1.2nF | 14 ns | 25ns | 30 ns | 90 ns | 3.6A | 20V | 900V | 125W Tc | 3.7Ohm | N-Channel | 1200pF @ 25V | 3.7Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 78nC @ 10V | 3.7 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHS20N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihs20n50ce3-datasheets-0551.pdf | TO-274AA | 3 | 8 Weeks | 3 | yes | No | SINGLE | 3 | 1 | FET General Purpose Power | 80 ns | 27ns | 44 ns | 32 ns | 20A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 250mW Tc | TO-247AC | 80A | 0.27Ohm | N-Channel | 2942pF @ 25V | 270m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 76nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFPC60 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfpc60pbf-datasheets-9807.pdf | 600V | 16A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Contains Lead | 21 Weeks | 38.000013g | 3 | No | 1 | Single | TO-247-3 | 3.9nF | 19 ns | 54ns | 56 ns | 110 ns | 16A | 20V | 600V | 280W Tc | 400mOhm | 600V | N-Channel | 3900pF @ 25V | 400mOhm @ 9.6A, 10V | 4V @ 250μA | 16A Tc | 210nC @ 10V | 400 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRFP460LC | Vishay Siliconix | $2.12 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1996 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp460lcpbf-datasheets-4357.pdf | 500V | 20A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Contains Lead | 6 Weeks | 38.000013g | Unknown | 3 | 20A | 500V | 1 | Single | 280W | 1 | TO-247-3 | 3.6nF | 18 ns | 77ns | 43 ns | 40 ns | 20A | 30V | 500V | 4V | 280W Tc | 270mOhm | 500V | N-Channel | 3600pF @ 25V | 4 V | 270mOhm @ 12A, 10V | 4V @ 250μA | 20A Tc | 120nC @ 10V | 270 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| SIHG28N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg28n65efge3-datasheets-0663.pdf | TO-247-3 | 3 | 21 Weeks | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 28A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 250W Tc | TO-247AC | 87A | 0.117Ohm | 427 mJ | N-Channel | 3249pF @ 100V | 117m Ω @ 14A, 10V | 4V @ 250μA | 28A Tc | 146nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP27N60K | Vishay Siliconix | $2.40 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfp27n60kpbf-datasheets-5402.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 15 Weeks | 38.000013g | Unknown | 3 | No | 1 | Single | 500W | TO-247-3 | 4.66nF | 27 ns | 110ns | 38 ns | 43 ns | 27A | 30V | 600V | 500W Tc | 220mOhm | 600V | N-Channel | 4660pF @ 25V | 5 V | 220mOhm @ 16A, 10V | 5V @ 250μA | 27A Tc | 180nC @ 10V | 220 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SIHB11N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb11n80ege3-datasheets-1395.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | D2PAK (TO-263) | 800V | 179W Tc | N-Channel | 1670pF @ 100V | 440mOhm @ 5.5A, 10V | 4V @ 250μA | 12A Tc | 88nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG14N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sihg14n50dge3-datasheets-5961.pdf | TO-247-3 | 3 | 13 Weeks | 38.000013g | 3 | No | 1 | Single | 1 | 16 ns | 27ns | 26 ns | 29 ns | 14A | 30V | SILICON | DRAIN | SWITCHING | 208W Tc | TO-247AC | 0.4Ohm | 56 mJ | 500V | N-Channel | 1144pF @ 100V | 400m Ω @ 7A, 10V | 5V @ 250μA | 14A Tc | 58nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| SIE818DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sie818dft1e3-datasheets-2475.pdf | 10-PolarPAK® (L) | 4 | 14 Weeks | 10 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | 1 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-XDSO-N4 | 30 ns | 150ns | 15 ns | 40 ns | 16A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 125W Tc | 79A | 80A | 0.0095Ohm | 75V | N-Channel | 3200pF @ 38V | 9.5m Ω @ 16A, 10V | 3V @ 250μA | 60A Tc | 95nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIHP22N60E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp22n60ege3-datasheets-1850.pdf | TO-220-3 | 10.51mm | 15.49mm | 4.65mm | Lead Free | 3 | 18 Weeks | 6.000006g | Unknown | 180mOhm | 3 | AVALANCHE RATED | Tin | No | 3 | 1 | Single | 227W | 1 | FET General Purpose Power | 18 ns | 68ns | 54 ns | 59 ns | 21A | 20V | SILICON | SWITCHING | 600V | 600V | 2V | 227W Tc | TO-220AB | 56A | N-Channel | 1920pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 86nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| SI7880ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7880adpt1e3-datasheets-0004.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5.4W | 1 | FET General Purpose Powers | R-XDSO-C5 | 20 ns | 14ns | 30 ns | 96 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 5.4W Ta 83W Tc | 70A | 0.004Ohm | 30V | N-Channel | 5600pF @ 15V | 3m Ω @ 20A, 10V | 3V @ 250μA | 40A Tc | 125nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI4864DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si4864dyt1ge3-datasheets-0084.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 3.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.6W | 1 | FET General Purpose Power | 40 ns | 44ns | 44 ns | 150 ns | 25A | 8V | SILICON | SWITCHING | 1.6W Ta | 20V | N-Channel | 600 mV | 3.5m Ω @ 25A, 4.5V | 2V @ 250μA | 17A Ta | 70nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| SIHP22N60EL-GE3 | Vishay Siliconix | $19.11 |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp22n60elge3-datasheets-1855.pdf | TO-220-3 | 14 Weeks | TO-220AB | 600V | 227W Tc | N-Channel | 1690pF @ 100V | 197mOhm @ 11A, 10V | 5V @ 250μA | 21A Tc | 74nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA22N60EL-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | EL | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha22n60ele3-datasheets-1892.pdf | TO-220-3 Full Pack | 18 Weeks | TO-220 Full Pack | 600V | 35W Tc | N-Channel | 1690pF @ 100V | 197mOhm @ 11A, 10V | 5V @ 250μA | 21A Tc | 74nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE808DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie808dft1e3-datasheets-7343.pdf | 10-PolarPAK® (L) | 27 Weeks | 10 | No | 1 | Single | 5.2W | 1 | 10-PolarPAK® (L) | 8.8nF | 25 ns | 55ns | 10 ns | 55 ns | 45A | 20V | 20V | 5.2W Ta 125W Tc | 1.6mOhm | N-Channel | 8800pF @ 10V | 1.6mOhm @ 25A, 10V | 3V @ 250μA | 60A Tc | 155nC @ 10V | 1.6 Ω | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA21N60EF-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-siha21n60efe3-datasheets-1929.pdf | TO-220-3 Full Pack | 3 | 21 Weeks | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 21A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 35W Tc | TO-220AB | 53A | 0.176Ohm | 367 mJ | N-Channel | 2030pF @ 100V | 176m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 84nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB22N60EL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb22n60elge3-datasheets-1970.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 227W Tc | 21A | 45A | 0.197Ohm | 286 mJ | N-Channel | 1690pF @ 100V | 197m Ω @ 11A, 10V | 5V @ 250μA | 21A Tc | 74nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7868ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7868adpt1e3-datasheets-5408.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 506.605978mg | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Powers | R-XDSO-C5 | 40A | 16V | SILICON | DRAIN | 20V | 20V | 5.4W Ta 83W Tc | 35A | 70A | 0.00275Ohm | 45 mJ | N-Channel | 6110pF @ 10V | 2.25m Ω @ 20A, 10V | 1.6V @ 250μA | 40A Tc | 150nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||
| SI7862ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7862adpt1e3-datasheets-0452.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 506.605978mg | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Powers | R-XDSO-C5 | 42 ns | 38ns | 50 ns | 120 ns | 18A | 8V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 60A | 0.003Ohm | 16V | N-Channel | 7340pF @ 8V | 3m Ω @ 29A, 4.5V | 2V @ 250μA | 18A Ta | 80nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| IRFBC40LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfbc40spbf-datasheets-1879.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | 8 Weeks | 2.387001g | 3 | No | 1 | Single | TO-262-3 | 1.3nF | 13 ns | 18ns | 20 ns | 55 ns | 6.2A | 20V | 600V | 3.1W Ta 130W Tc | 1.2Ohm | 600V | N-Channel | 1300pF @ 25V | 1.2Ohm @ 3.7A, 10V | 4V @ 250μA | 6.2A Tc | 60nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFIBC40GLCPBF | Vishay Siliconix | $1.84 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfibc40glcpbf-datasheets-2127.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 8 Weeks | 6.000006g | 3 | No | 1 | Single | 40W | 1 | TO-220-3 | 1.1nF | 12 ns | 20ns | 17 ns | 27 ns | 3.5A | 20V | 600V | 40W Tc | 1.2Ohm | 600V | N-Channel | 1100pF @ 25V | 1.2Ohm @ 2.1A, 10V | 4V @ 250μA | 3.5A Tc | 39nC @ 10V | 1.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SIHG17N60D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihg17n60dge3-datasheets-2154.pdf | TO-247-3 | 15.87mm | 20.82mm | 5.31mm | 3 | 8 Weeks | 38.000013g | Unknown | 3 | No | 1 | Single | 1 | 22 ns | 56ns | 30 ns | 37 ns | 17A | 30V | SILICON | DRAIN | SWITCHING | 600V | 600V | 3V | 277.8W Tc | TO-247AC | 48A | N-Channel | 1780pF @ 100V | 340m Ω @ 8A, 10V | 5V @ 250μA | 17A Tc | 90nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IRF830A | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | /files/vishaysiliconix-irf830apbf-datasheets-1618.pdf | 500V | 5A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 49 Weeks | 6.000006g | 3 | 1 | Single | 74W | TO-220AB | 620pF | 10 ns | 21ns | 15 ns | 21 ns | 5A | 30V | 500V | 74W Tc | 1.4Ohm | 500V | N-Channel | 620pF @ 25V | 1.4Ohm @ 3A, 10V | 4.5V @ 250μA | 5A Tc | 24nC @ 10V | 1.4 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| SIHG460B-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-irfp460bpbf-datasheets-4496.pdf | TO-247-3 | 15.87mm | 20.82mm | 5.31mm | 3 | 14 Weeks | 38.000013g | Unknown | 3 | No | 1 | Single | 278W | 1 | 24 ns | 31ns | 56 ns | 117 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 500V | 500V | 2V | 278W Tc | TO-247AC | 62A | 0.25Ohm | N-Channel | 3094pF @ 100V | 250m Ω @ 10A, 10V | 4V @ 250μA | 20A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SIHG17N60D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg17n60dge3-datasheets-2154.pdf | TO-247-3 | 3 | 20 Weeks | 38.000013g | 3 | No | 1 | Single | 1 | 22 ns | 56ns | 30 ns | 37 ns | 17A | 5V | SILICON | DRAIN | SWITCHING | 277.8W Tc | TO-247AC | 48A | 600V | N-Channel | 1780pF @ 100V | 340m Ω @ 8A, 10V | 5V @ 250μA | 17A Tc | 90nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA21N65EF-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha21n65efe3-datasheets-2333.pdf | TO-220-3 Full Pack | 21 Weeks | TO-220 Full Pack | 2.322nF | 21A | 650V | 35W Tc | N-Channel | 2322pF @ 100V | 180mOhm @ 11A, 10V | 4V @ 250μA | 21A Tc | 106nC @ 10V | 180 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM110N04-03P-E3 | Vishay Siliconix | $9.38 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum110n0403pe3-datasheets-2358.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 13 Weeks | TO-263 (D2Pak) | 6.5nF | 110A | 40V | 3.75W Ta 375W Tc | N-Channel | 6500pF @ 25V | 3.1mOhm @ 30A, 10V | 4V @ 250μA | 110A Tc | 150nC @ 10V | 3.1 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB22N60ET5-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb22n60ee3-datasheets-1845.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263 (D2Pak) | 600V | 227W Tc | N-Channel | 1920pF @ 100V | 180mOhm @ 11A, 10V | 4V @ 250μA | 21A Tc | 86nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLI540G | Vishay Siliconix | $0.96 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irli540gpbf-datasheets-4964.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | 12 Weeks | 6.000006g | 3 | No | 1 | Single | 48W | 1 | TO-220-3 | 2.2nF | 8.5 ns | 170ns | 80 ns | 35 ns | 17A | 10V | 100V | 48W Tc | 77mOhm | 100V | N-Channel | 2200pF @ 25V | 77mOhm @ 10A, 5V | 2V @ 250μA | 17A Tc | 64nC @ 5V | 77 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||
| SUM52N20-39P-E3 | Vishay Siliconix | $5.15 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum52n2039pe3-datasheets-2425.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | 2 | 6 Weeks | 1.437803g | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | 1 | Single | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 170ns | 9 ns | 34 ns | 52A | 25V | 200V | SILICON | 4.5V | 3.12W Ta 250W Tc | 133 ns | 0.094Ohm | 200V | N-Channel | 4220pF @ 25V | 4.5 V | 38m Ω @ 20A, 15V | 4.5V @ 250μA | 52A Tc | 185nC @ 15V | 10V 15V | ±25V |
