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ContactIXYS / Littelfuse(10406)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTP42N15T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | TrenchHV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixtp42n15t-datasheets-4225.pdf | TO-220-3 | Lead Free | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 42A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 200W Tc | TO-220AB | 100A | 0.045Ohm | 400 mJ | N-Channel | 1880pF @ 25V | 45m Ω @ 500mA, 10V | 4.5V @ 250μA | 42A Tc | 21nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXTP10N60P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixta10n60p-datasheets-9382.pdf | 600V | 10A | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | AVALANCHE RATED | Pure Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 27ns | 21 ns | 65 ns | 10A | 30V | SILICON | DRAIN | SWITCHING | 200W Tc | TO-220AB | 30A | 0.74Ohm | 500 mJ | 600V | N-Channel | 1610pF @ 25V | 740m Ω @ 5A, 10V | 5.5V @ 250μA | 10A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXTP05N100M | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixtp05n100m-datasheets-2408.pdf | TO-220-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 700mA | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 1000V | 1000V | 25W Tc | TO-220AB | 0.7A | 3A | 100 mJ | N-Channel | 260pF @ 25V | 17 Ω @ 375mA, 10V | 4.5V @ 25μA | 700mA Tc | 7.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXTP160N04T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixta160n04t2-datasheets-9891.pdf | TO-220-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 160A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 250W Tc | TO-220AB | 400A | 0.005Ohm | 600 mJ | N-Channel | 4640pF @ 25V | 5m Ω @ 50A, 10V | 4V @ 250μA | 160A Tc | 79nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXTP220N04T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixtp220n04t2-datasheets-2629.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | 75A | e3 | Matte Tin (Sn) | 40V | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 21ns | 21 ns | 31 ns | 220A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | TO-220AB | 0.0035Ohm | 600 mJ | 40V | N-Channel | 6820pF @ 25V | 3.5m Ω @ 50A, 10V | 4V @ 250μA | 220A Tc | 112nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXTP3N100P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | PolarVHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/ixys-ixtp3n100p-datasheets-2645.pdf | TO-220-3 | 3 | 24 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 125W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 27ns | 29 ns | 75 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 125W Tc | TO-220AB | 3A | 6A | 200 mJ | 1kV | N-Channel | 1100pF @ 25V | 4.8 Ω @ 1.5A, 10V | 4.5V @ 250μA | 3A Tc | 39nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTP14N60P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | PolarHV™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixta14n60p-datasheets-9417.pdf | 600V | 14A | TO-220-3 | Lead Free | 3 | 24 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 27ns | 26 ns | 70 ns | 14A | 30V | SILICON | DRAIN | SWITCHING | P-CHANNEL | 300W Tc | TO-220AB | 42A | 0.55Ohm | 900 mJ | 600V | N-Channel | 2500pF @ 25V | 550m Ω @ 7A, 10V | 5.5V @ 250μA | 14A Tc | 36nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXTA100N04T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixtp100n04t2-datasheets-3449.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 150W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 5.2ns | 6.4 ns | 15.8 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 150W Tc | 300A | 0.007Ohm | 300 mJ | 40V | N-Channel | 2690pF @ 25V | 7m Ω @ 25A, 10V | 4V @ 250μA | 100A Tc | 25.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTP110N055T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixta110n055t2-datasheets-3951.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | Not Qualified | R-PSFM-T3 | 25ns | 23 ns | 40 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | TO-220AB | 300A | 0.0066Ohm | 400 mJ | 55V | N-Channel | 3060pF @ 25V | 6.6m Ω @ 25A, 10V | 4V @ 250μA | 110A Tc | 57nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTA08N100P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixty08n100p-datasheets-5188.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 42W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 37ns | 34 ns | 35 ns | 800mA | 20V | SILICON | DRAIN | SWITCHING | 1000V | 42W Tc | 0.8A | 1.8A | 80 mJ | 1kV | N-Channel | 240pF @ 25V | 20 Ω @ 500mA, 10V | 4V @ 50μA | 800mA Tc | 11.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXTP2N60P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Polar™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/ixys-ixtp2n60p-datasheets-5877.pdf | 600V | 2A | TO-220-3 | Lead Free | 3 | 25 Weeks | 3 | yes | AVALANCHE RATED | Pure Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 55W | 1 | FET General Purpose Power | Not Qualified | 20ns | 23 ns | 60 ns | 2A | 30V | SILICON | DRAIN | SWITCHING | 55W Tc | TO-220AB | 2A | 4A | 150 mJ | 600V | N-Channel | 240pF @ 25V | 5.1 Ω @ 1A, 10V | 5V @ 250μA | 2A Tc | 7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IXTA3N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/ixys-ixty3n50p-datasheets-5773.pdf | 500V | 3A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8 Weeks | 3 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 70W | 1 | Not Qualified | R-PSSO-G2 | 15ns | 12 ns | 38 ns | 3.6A | 30V | SILICON | DRAIN | SWITCHING | 70W Tc | 8A | 2Ohm | 180 mJ | 500V | N-Channel | 409pF @ 25V | 2 Ω @ 1.8A, 10V | 5.5V @ 50μA | 3.6A Tc | 9.3nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| IXTA8N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | PolarHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/ixys-ixtp8n50p-datasheets-5784.pdf | 500V | 8A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 4 Weeks | 3 | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 150W | 1 | R-PSSO-G2 | 28ns | 23 ns | 65 ns | 8A | 30V | SILICON | DRAIN | SWITCHING | 150W Tc | 8A | 0.8Ohm | 400 mJ | 500V | N-Channel | 1050pF @ 25V | 800m Ω @ 4A, 10V | 5.5V @ 100μA | 8A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXFR24N50Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | /files/ixys-ixfr26n50q-datasheets-7365.pdf | ISOPLUS247™ | Lead Free | 3 | 35 Weeks | 230mOhm | 3 | yes | AVALANCHE RATED | No | 3 | Single | 250W | 1 | FET General Purpose Power | 30ns | 16 ns | 55 ns | 22A | 20V | SILICON | ISOLATED | SWITCHING | 250W Tc | 96A | 500V | N-Channel | 3900pF @ 25V | 230m Ω @ 12A, 10V | 4.5V @ 4mA | 22A Tc | 95nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXKC13N80C | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/ixys-ixkc13n80c-datasheets-7452.pdf | ISOPLUS220™ | 3 | 3 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 130W | 1 | FET General Purpose Power | Not Qualified | 15ns | 20 ns | 75 ns | 13A | 20V | SILICON | ISOLATED | SWITCHING | 0.29Ohm | 670 mJ | 800V | N-Channel | 2300pF @ 25V | 290m Ω @ 9A, 10V | 4V @ 1mA | 13A Tc | 90nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXTX24N100 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/ixys-ixtx24n100-datasheets-7672.pdf | TO-247-3 | Lead Free | 3 | 8 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 35ns | 21 ns | 75 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 568W Tc | 96A | 0.4Ohm | 1kV | N-Channel | 8700pF @ 25V | 400m Ω @ 12A, 10V | 5.5V @ 8mA | 24A Tc | 267nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTQ102N15T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/ixys-ixta102n15t-datasheets-9411.pdf | TO-3P-3, SC-65-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 455W | 1 | FET General Purpose Power | Not Qualified | 14ns | 22 ns | 25 ns | 102A | 20V | SILICON | DRAIN | SWITCHING | 455W Tc | 0.018Ohm | 750 mJ | 150V | N-Channel | 5220pF @ 25V | 18m Ω @ 500mA, 10V | 5V @ 1mA | 102A Tc | 87nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFN130N30 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | /files/ixys-ixfn130n30-datasheets-5212.pdf | 300V | 130A | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | 36mg | No SVHC | 22mOhm | 4 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 700W | 1 | FET General Purpose Power | Not Qualified | 75ns | 31 ns | 130 ns | 130A | 20V | 300V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4V | 700W Tc | 250 ns | 520A | 300V | N-Channel | 14500pF @ 25V | 4 V | 22m Ω @ 500mA, 10V | 4V @ 8mA | 130A Tc | 380nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXFK44N60 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixfk44n60-datasheets-5258.pdf | 600V | 44A | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 8 Weeks | 130MOhm | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 40 ns | 50ns | 40 ns | 100 ns | 44A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 600V | N-Channel | 8900pF @ 25V | 130m Ω @ 22A, 10V | 4.5V @ 8mA | 44A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFH20N80Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | /files/ixys-ixft20n80q-datasheets-7388.pdf | 800V | 20A | TO-247-3 | Lead Free | 3 | 8 Weeks | 6g | No SVHC | 420mOhm | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 27ns | 14 ns | 74 ns | 20A | 20V | 800V | SILICON | DRAIN | 4.5V | 360W Tc | TO-247AD | 250 ns | 80A | 1500 mJ | 800V | N-Channel | 5100pF @ 25V | 4.5 V | 420m Ω @ 10A, 10V | 4.5V @ 4mA | 20A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFH26N60Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | /files/ixys-ixft26n60q-datasheets-7390.pdf | 600V | 26A | TO-247-3 | Lead Free | 3 | 8 Weeks | 6g | No SVHC | 250mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 360W | 1 | 32ns | 16 ns | 80 ns | 26A | 20V | 600V | SILICON | DRAIN | SWITCHING | 4.5V | 360W Tc | TO-247AD | 250 ns | 600V | N-Channel | 5100pF @ 25V | 4.5 V | 250m Ω @ 13A, 10V | 4.5V @ 4mA | 26A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFX90N30 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/ixys-ixfx90n30-datasheets-5288.pdf | 300V | 90A | TO-247-3 | Lead Free | 3 | 8 Weeks | 33MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 3 | Single | 560W | 1 | FET General Purpose Power | 55ns | 40 ns | 100 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 300V | N-Channel | 10000pF @ 25V | 33m Ω @ 45A, 10V | 4V @ 8mA | 90A Tc | 360nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFN120N20 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | /files/ixys-ixfn120n20-datasheets-5298.pdf | 200V | 120A | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | No SVHC | 17MOhm | 3 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 600W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 55ns | 40 ns | 110 ns | 120A | 20V | 200V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4V | 600W Tc | 250 ns | 480A | 200V | N-Channel | 9100pF @ 25V | 4 V | 17m Ω @ 500mA, 10V | 4V @ 8mA | 120A Tc | 360nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXFK24N100 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixfx24n100-datasheets-7466.pdf | 1kV | 24A | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 8 Weeks | 390MOhm | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 560W | 1 | FET General Purpose Power | 35 ns | 35ns | 21 ns | 75 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 560W Tc | 96A | 1kV | N-Channel | 8700pF @ 25V | 390m Ω @ 12A, 10V | 5.5V @ 8mA | 24A Tc | 267nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFX44N60 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/ixys-ixfk44n60-datasheets-5258.pdf | 600V | 44A | TO-247-3 | Lead Free | 3 | 8 Weeks | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 560W | 1 | FET General Purpose Power | 50ns | 40 ns | 100 ns | 44A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 600V | N-Channel | 8900pF @ 25V | 130m Ω @ 22A, 10V | 4.5V @ 8mA | 44A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFR180N10 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | /files/ixys-ixfr180n10-datasheets-5326.pdf | 100V | 165A | ISOPLUS247™ | Lead Free | 3 | No SVHC | 247 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 400W | 1 | FET General Purpose Power | R-PSIP-T3 | 2.5kV | 90ns | 65 ns | 140 ns | 165A | 20V | 100V | SILICON | ISOLATED | SWITCHING | 400W Tc | 250 ns | 720A | 0.008Ohm | 3000 mJ | 100V | N-Channel | 9400pF @ 25V | 4 V | 8m Ω @ 90A, 10V | 4V @ 8mA | 165A Tc | 400nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFK180N07 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | /files/ixys-ixfx180n07-datasheets-5254.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 560W | 1 | FET General Purpose Power | 90ns | 55 ns | 140 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 568W Tc | 720A | 0.006Ohm | 70V | N-Channel | 9400pF @ 25V | 6m Ω @ 500mA, 10V | 4V @ 8mA | 180A Tc | 420nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFL34N100 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | /files/ixys-ixfl34n100-datasheets-8625.pdf | ISOPLUS264™ | Lead Free | 3 | 280mOhm | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 550W | 1 | FET General Purpose Power | Not Qualified | 65ns | 30 ns | 110 ns | 30A | 20V | SILICON | ISOLATED | SWITCHING | 1000V | 550W Tc | 4000 mJ | 1kV | N-Channel | 9200pF @ 25V | 280m Ω @ 30A, 10V | 5V @ 8mA | 30A Tc | 380nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFK50N50 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | /files/ixys-ixfn50n50-datasheets-0988.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 100MOhm | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 560W | 1 | FET General Purpose Power | Not Qualified | 60ns | 45 ns | 120 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 200A | 500V | N-Channel | 9400pF @ 25V | 80m Ω @ 25A, 10V | 4.5V @ 8mA | 50A Tc | 330nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFN180N10 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/ixys-ixfn180n10-datasheets-8633.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | 42g | No SVHC | 8MOhm | 4 | yes | EAR99 | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 600W | 1 | FET General Purpose Power | Not Qualified | 2.5kV | 90ns | 65 ns | 140 ns | 180A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4V | 600W Tc | 250 ns | 720A | 3000 mJ | 100V | N-Channel | 9100pF @ 25V | 4 V | 8m Ω @ 500mA, 10V | 4V @ 8mA | 180A Tc | 360nC @ 10V | 10V | ±20V |
