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ContactIXYS / Littelfuse(10406)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTH60N25 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixth60n25-datasheets-4213.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 400W | 1 | Not Qualified | 23ns | 17 ns | 60 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 400W Tc | TO-247AD | 240A | 0.046Ohm | 1500 mJ | 250V | N-Channel | 4400pF @ 25V | 46m Ω @ 15A, 10V | 4V @ 250μA | 60A Tc | 164nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFT340N075T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | GigaMOS™, HiPerFET™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfh340n075t2-datasheets-2443.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 26 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 340A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 935W Tc | 850A | 960 mJ | N-Channel | 19000pF @ 25V | 3.2m Ω @ 100A, 10V | 4V @ 3mA | 340A Tc | 300nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||
| IXFH12N100F | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerRF™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/ixys-ixfh12n100f-datasheets-4242.pdf | TO-3P-3 Full Pack | Lead Free | 3 | 30 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 300W | 1 | 9.8ns | 12 ns | 31 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 3V | 300W Tc | TO-247 | 48A | 1kV | N-Channel | 2700pF @ 25V | 1.05 Ω @ 6A, 10V | 5.5V @ 4mA | 12A Tc | 77nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFT50N20 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixft50n20-datasheets-4262.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 26 Weeks | 45MOhm | yes | not_compliant | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 15ns | 16 ns | 72 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 200A | 200V | N-Channel | 4400pF @ 25V | 45m Ω @ 25A, 10V | 4V @ 4mA | 50A Tc | 220nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFX180N15P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfx180n15p-datasheets-4263.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | 11MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 830W | 1 | Not Qualified | 32ns | 36 ns | 150 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 830W Tc | 4000 mJ | 150V | N-Channel | 7000pF @ 25V | 11m Ω @ 90A, 10V | 5V @ 4mA | 180A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTH50N20 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | MegaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixth50n20-datasheets-4268.pdf | 200V | 50A | TO-247-3 | Lead Free | 3 | 28 Weeks | No SVHC | 45mOhm | 3 | yes | EAR99 | No | 3 | Single | 300W | 1 | FET General Purpose Power | 15ns | 16 ns | 72 ns | 50A | 20V | 200V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | TO-247AD | 200A | 200V | N-Channel | 4600pF @ 25V | 4 V | 45m Ω @ 25A, 10V | 4V @ 250μA | 50A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFK120N30T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | GigaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfk120n30t-datasheets-4284.pdf | TO-264-3, TO-264AA | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 300V | 960W Tc | 330A | 0.024Ohm | 2500 mJ | N-Channel | 20000pF @ 25V | 24m Ω @ 60A, 10V | 5V @ 4mA | 120A Tc | 265nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFR18N90P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfr18n90p-datasheets-4287.pdf | ISOPLUS247™ | 3 | 30 Weeks | 247 | yes | AVALANCHE RATED, UL RECOGNIZED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 10.5A | 30V | SILICON | ISOLATED | SWITCHING | 200W Tc | 36A | 0.66Ohm | 800 mJ | 900V | N-Channel | 5230pF @ 25V | 660m Ω @ 9A, 10V | 6V @ 1mA | 10.5A Tc | 97nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFK32N80P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfx32n80p-datasheets-4281.pdf | TO-264-3, TO-264AA | 3 | 30 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 830W | 1 | Not Qualified | 24ns | 24 ns | 85 ns | 32A | 30V | SILICON | DRAIN | SWITCHING | 5V | 830W Tc | 0.27Ohm | 2000 mJ | 800V | N-Channel | 8800pF @ 25V | 270m Ω @ 16A, 10V | 5V @ 8mA | 32A Tc | 150nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXTK88N30P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtq88n30p-datasheets-2251.pdf | TO-264-3, TO-264AA | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 600W | 1 | Not Qualified | R-PSFM-T3 | 24ns | 25 ns | 96 ns | 88A | 20V | SILICON | DRAIN | SWITCHING | 600W Tc | 220A | 0.04Ohm | 2000 mJ | 300V | N-Channel | 6300pF @ 25V | 40m Ω @ 44A, 10V | 5V @ 250μA | 88A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFT400N075T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | GigaMOS™, HiPerFET™, TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfh400n075t2-datasheets-9152.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 26 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 400A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 1000W Tc | 1000A | 0.0023Ohm | 1500 mJ | N-Channel | 24000pF @ 25V | 2.3m Ω @ 100A, 10V | 4V @ 250μA | 400A Tc | 420nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTH500N04T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixtt500n04t2-datasheets-4316.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 1kW | 1 | FET General Purpose Power | R-PSFM-T3 | 500A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1000W Tc | 800 mJ | N-Channel | 25000pF @ 25V | 1.6m Ω @ 100A, 10V | 3.5V @ 250μA | 500A Tc | 405nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFK120N25P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfx120n25p-datasheets-7049.pdf | TO-264-3, TO-264AA | 3 | 30 Weeks | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 700W | 1 | FET General Purpose Power | R-PSFM-T3 | 33ns | 33 ns | 130 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 700W Tc | 300A | 0.024Ohm | 2500 mJ | 250V | N-Channel | 8000pF @ 25V | 24m Ω @ 60A, 10V | 5V @ 4mA | 120A Tc | 185nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTK102N30P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtk102n30p-datasheets-4367.pdf | TO-264-3, TO-264AA | 3 | 28 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 700W | 1 | Not Qualified | 28ns | 30 ns | 130 ns | 102A | 20V | SILICON | DRAIN | SWITCHING | 5V | 700W Tc | 250A | 2500 mJ | 300V | N-Channel | 7500pF @ 25V | 33m Ω @ 500mA, 10V | 5V @ 500μA | 102A Tc | 224nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXKC40N60C | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixkc40n60c-datasheets-4394.pdf | ISOPLUS220™ | Lead Free | 3 | 32 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | FET General Purpose Power | Not Qualified | 5ns | 4.5 ns | 67 ns | 28A | 20V | SILICON | ISOLATED | SWITCHING | TO-220AB | 24A | 0.096Ohm | 690 mJ | 600V | N-Channel | 4800pF @ 25V | 95m Ω @ 28A, 10V | 3.9V @ 2mA | 28A Tc | 230nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFR102N30P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfr102n30p-datasheets-4397.pdf | ISOPLUS247™ | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 250W | 1 | Not Qualified | 28ns | 30 ns | 130 ns | 60A | 20V | SILICON | ISOLATED | SWITCHING | 250W Tc | 250A | 2500 mJ | 300V | N-Channel | 7500pF @ 25V | 36m Ω @ 51A, 10V | 5V @ 4mA | 60A Tc | 224nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFK88N30P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfh88n30p-datasheets-7053.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | No SVHC | 40mOhm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 600W | 1 | FET General Purpose Power | Not Qualified | 24ns | 25 ns | 96 ns | 88A | 20V | SILICON | DRAIN | SWITCHING | 5V | 600W Tc | 220A | 2000 mJ | 300V | N-Channel | 6300pF @ 25V | 40m Ω @ 44A, 10V | 5V @ 4mA | 88A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFK48N60P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfx48n60p-datasheets-4374.pdf | 600V | 48A | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 830W | 1 | Not Qualified | 25ns | 22 ns | 85 ns | 48A | 30V | SILICON | DRAIN | SWITCHING | 5V | 830W Tc | 110A | 2000 mJ | 600V | N-Channel | 8860pF @ 25V | 135m Ω @ 500mA, 10V | 5V @ 8mA | 48A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXFR32N80P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfr32n80p-datasheets-4424.pdf | ISOPLUS247™ | 16.13mm | 21.34mm | 5.21mm | 3 | 30 Weeks | 247 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | R-PSFM-T3 | 30 ns | 24ns | 24 ns | 85 ns | 20A | 30V | SILICON | ISOLATED | SWITCHING | 300W Tc | 70A | 0.29Ohm | 1500 mJ | 800V | N-Channel | 8800pF @ 25V | 290m Ω @ 16A, 10V | 5V @ 8mA | 20A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| IXFR200N10P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfr200n10p-datasheets-4452.pdf | ISOPLUS247™ | Lead Free | 3 | 30 Weeks | No SVHC | 247 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | R-PSIP-T3 | 2.5kV | 35ns | 90 ns | 150 ns | 133A | 20V | SILICON | ISOLATED | SWITCHING | 5V | 300W Tc | 400A | 0.009Ohm | 4000 mJ | 100V | N-Channel | 7600pF @ 25V | 9m Ω @ 100A, 10V | 5V @ 8mA | 133A Tc | 235nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IXFH12N120P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/ixys-ixfh12n120p-datasheets-4453.pdf | TO-247-3 | Lead Free | 3 | 30 Weeks | No SVHC | 1.35Ohm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 543W | 1 | FET General Purpose Power | Not Qualified | 25ns | 34 ns | 62 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 1200V | 6.5V | 543W Tc | TO-247AD | 500 mJ | 1.2kV | N-Channel | 5400pF @ 25V | 1.35 Ω @ 500mA, 10V | 6.5V @ 1mA | 12A Tc | 103nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| IXFH21N50F | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerRF™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | /files/ixys-ixfh21n50f-datasheets-4478.pdf | TO-247-3 | 3 | 10 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NO | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 12ns | 7.7 ns | 36 ns | 21A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 84A | 0.25Ohm | 1500 mJ | 500V | N-Channel | 2600pF @ 25V | 250m Ω @ 10.5A, 10V | 5.5V @ 4mA | 21A Tc | 77nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXFH13N90 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfh13n90-datasheets-4489.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 12ns | 18 ns | 51 ns | 13A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 52A | 0.8Ohm | 900V | N-Channel | 4200pF @ 25V | 800m Ω @ 500mA, 10V | 4.5V @ 4mA | 13A Tc | 155nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFH20N60 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | /files/ixys-ixfh15n60-datasheets-7594.pdf | 600V | 20A | TO-247-3 | Lead Free | 3 | 6g | No SVHC | 350MOhm | 3 | yes | EAR99 | AVALANCHE RATED | 8541.29.00.95 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 43ns | 40 ns | 70 ns | 20A | 20V | 600V | SILICON | DRAIN | SWITCHING | 4.5V | 300W Tc | 250 ns | 80A | 600V | N-Channel | 4500pF @ 25V | 4.5 V | 350m Ω @ 10A, 10V | 4.5V @ 4mA | 20A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXFH26N50Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | /files/ixys-ixft24n50q-datasheets-4238.pdf | 500V | 26A | TO-247-3 | Lead Free | 3 | 8 Weeks | 6g | Unknown | 200mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 300W | 1 | FET General Purpose Power | 30ns | 16 ns | 55 ns | 26A | 20V | 500V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | TO-247AD | 250 ns | 500V | N-Channel | 3900pF @ 25V | 4.5 V | 200m Ω @ 13A, 10V | 4.5V @ 4mA | 26A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IXFX120N20 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | /files/ixys-ixfx120n20-datasheets-8098.pdf | 200V | 120A | TO-247-3 | Lead Free | 3 | 8 Weeks | 17MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 560W | 1 | FET General Purpose Power | 65ns | 35 ns | 110 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 480A | 200V | N-Channel | 9100pF @ 25V | 17m Ω @ 60A, 10V | 4V @ 8mA | 120A Tc | 300nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFH40N30Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/ixys-ixfh40n30q-datasheets-8102.pdf | 300V | 40A | TO-247-3 | Lead Free | 3 | 8 Weeks | 80MOhm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 35ns | 12 ns | 40 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 160A | 1000 mJ | 300V | N-Channel | 3100pF @ 25V | 80m Ω @ 500mA, 10V | 4V @ 4mA | 40A Tc | 140nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFH32N50 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | /files/ixys-ixft30n50-datasheets-4425.pdf | 500V | 32A | TO-247-3 | Lead Free | 3 | No SVHC | 150mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 360W | 1 | FET General Purpose Power | 42ns | 26 ns | 110 ns | 32A | 20V | 500V | SILICON | DRAIN | SWITCHING | 4V | 360W Tc | 250 ns | 500V | N-Channel | 5700pF @ 25V | 4 V | 150m Ω @ 15A, 10V | 4V @ 4mA | 32A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IXFX180N10 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | /files/ixys-ixfx180n10-datasheets-8126.pdf | 100V | 180A | TO-247-3 | Lead Free | 3 | 8 Weeks | 8MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 560W | 1 | FET General Purpose Power | 90ns | 65 ns | 140 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 720A | 100V | N-Channel | 10900pF @ 25V | 8m Ω @ 90A, 10V | 4V @ 8mA | 180A Tc | 390nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFT58N20Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | /files/ixys-ixfh58n20q-datasheets-8100.pdf | 200V | 58A | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | Lead Free | 2 | 8 Weeks | 40MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 4 | Single | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 40ns | 13 ns | 40 ns | 58A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 200V | N-Channel | 3600pF @ 25V | 40m Ω @ 29A, 10V | 4V @ 4mA | 58A Tc | 140nC @ 10V | 10V | ±20V |
