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ContactIXYS / Littelfuse(10406)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | Nominal Supply Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Output Voltage | Output Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Number of Outputs | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXFX80N50P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfk80n50p-datasheets-2108.pdf | 500V | 80A | TO-247-3 | Lead Free | 3 | 30 Weeks | 65MOhm | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.04kW | 1 | Not Qualified | 27ns | 16 ns | 70 ns | 80A | 30V | SILICON | DRAIN | SWITCHING | 1040W Tc | 200A | 500V | N-Channel | 12700pF @ 25V | 65m Ω @ 40A, 10V | 5V @ 8mA | 80A Tc | 197nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IXFK48N50Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfx48n50q-datasheets-2086.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 100MOhm | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 33 ns | 22ns | 10 ns | 75 ns | 48A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 192A | 2500 mJ | 500V | N-Channel | 7000pF @ 25V | 100m Ω @ 24A, 10V | 4V @ 4mA | 48A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFX40N90P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfx40n90p-datasheets-0804.pdf | TO-247-3 | 3 | 30 Weeks | 247 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 960W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 50ns | 46 ns | 77 ns | 40A | SILICON | DRAIN | SWITCHING | 960W Tc | 80A | 0.21Ohm | 1500 mJ | 900V | N-Channel | 14000pF @ 25V | 230m Ω @ 20A, 10V | 6.5V @ 1mA | 40A Tc | 230nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFK27N80 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixfk27n80-datasheets-0806.pdf | 800V | 27A | TO-264-3, TO-264AA | Lead Free | 3 | 3 | yes | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 80ns | 40 ns | 75 ns | 27A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 108A | 800V | N-Channel | 9740pF @ 25V | 300m Ω @ 13.5A, 10V | 4.5V @ 8mA | 27A Tc | 400nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXFK100N10 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixfk150n10-datasheets-0800.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 12MOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | 3 | Single | 500W | 1 | FET General Purpose Power | 60ns | 60 ns | 100 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 560A | 100V | N-Channel | 9000pF @ 25V | 12m Ω @ 75A, 10V | 4V @ 8mA | 100A Tc | 360nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFK36N60 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1996 | /files/ixys-ixfk32n60-datasheets-0809.pdf | 600V | 36A | TO-264-3, TO-264AA | Contains Lead | 3 | 6 Weeks | 10mg | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | 8541.29.00.95 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 45ns | 60 ns | 100 ns | 36A | 20V | SILICON | DRAIN | SWITCHING | 4.5V | 500W Tc | 144A | 0.18Ohm | 600V | N-Channel | 9000pF @ 25V | 180m Ω @ 500mA, 10V | 4.5V @ 8mA | 36A Tc | 325nC @ 25V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFR20N120P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixfr20n120p-datasheets-0846.pdf | ISOPLUS247™ | 3 | 30 Weeks | 3 | yes | UL RECOGNIZED, AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 290W | 1 | FET General Purpose Power | Not Qualified | 45ns | 70 ns | 72 ns | 13A | 30V | SILICON | ISOLATED | SWITCHING | 1200V | 290W Tc | 50A | 1000 mJ | 1.2kV | N-Channel | 11100pF @ 25V | 630m Ω @ 10A, 10V | 6.5V @ 1mA | 13A Tc | 193nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFX21N100Q | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfk21n100q-datasheets-0857.pdf | TO-247-3 | Lead Free | 3 | 500mOhm | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | FET General Purpose Power | Not Qualified | 18ns | 12 ns | 60 ns | 21A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 500W Tc | 84A | 2500 mJ | 1kV | N-Channel | 6900pF @ 25V | 500m Ω @ 10.5A, 10V | 5.5V @ 4mA | 21A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXFK40N90P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfx40n90p-datasheets-0804.pdf | TO-264-3, TO-264AA | 3 | 30 Weeks | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 960W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 50ns | 46 ns | 77 ns | 40A | SILICON | DRAIN | SWITCHING | 960W Tc | 80A | 0.21Ohm | 1500 mJ | 900V | N-Channel | 14000pF @ 25V | 230m Ω @ 20A, 10V | 6.5V @ 1mA | 40A Tc | 230nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXFX50N50 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/ixys-ixfx55n50-datasheets-8763.pdf | TO-247-3 | Lead Free | 3 | 6 Weeks | 100MOhm | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 520W | 1 | FET General Purpose Power | 60ns | 45 ns | 120 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 520W Tc | 200A | 500V | N-Channel | 9400pF @ 25V | 100m Ω @ 25A, 10V | 4.5V @ 8mA | 50A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFN32N80P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | PolarHV™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfn32n80p-datasheets-0882.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 625W | 1 | Not Qualified | 85 ns | 29A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 625W Tc | 250A | 0.27Ohm | 5000 mJ | 800V | N-Channel | 8820pF @ 25V | 270m Ω @ 16A, 10V | 5V @ 8mA | 29A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IXFN48N60P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | PolarHV™ | Chassis Mount, Panel, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfn48n60p-datasheets-0891.pdf | 600V | 48A | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.42mm | Lead Free | 4 | 30 Weeks | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 625W | 1 | Not Qualified | 30 ns | 25ns | 22 ns | 85 ns | 40A | 30V | SILICON | ISOLATED | SWITCHING | 625W Tc | 110A | 2000 mJ | 600V | N-Channel | 8860pF @ 25V | 140m Ω @ 4A, 10V | 5.5V @ 8mA | 40A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| IXTH60N10 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixtt60n10-datasheets-4393.pdf | TO-247-3 | 3 | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | 20ns | 18 ns | 70 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 80A | 0.02Ohm | 1500 mJ | 100V | N-Channel | 3200pF @ 25V | 20m Ω @ 30A, 10V | 4V @ 250μA | 60A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXFB170N30P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixfb170n30p-datasheets-0901.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 26 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 170A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 300V | 1250W Tc | 500A | 0.018Ohm | 5000 mJ | N-Channel | 20000pF @ 25V | 18m Ω @ 85A, 10V | 4.5V @ 1mA | 170A Tc | 258nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFN44N80P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | PolarHV™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfn44n80p-datasheets-0918.pdf | SOT-227-4, miniBLOC | 4 | 30 Weeks | No SVHC | 4 | yes | EAR99 | AVALANCHE RATED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | Single | 694W | 1 | 22ns | 27 ns | 75 ns | 39A | 30V | SILICON | ISOLATED | SWITCHING | 5V | 694W Tc | 800V | N-Channel | 12000pF @ 25V | 190m Ω @ 500mA, 10V | 5V @ 8mA | 39A Tc | 200nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXFK52N60Q2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfk52n60q2-datasheets-0927.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 735W | 1 | Not Qualified | 23 ns | 13ns | 8.5 ns | 56 ns | 52A | 30V | SILICON | DRAIN | SWITCHING | 735W Tc | 208A | 0.115Ohm | 4000 mJ | 600V | N-Channel | 6800pF @ 25V | 115m Ω @ 500mA, 10V | 4.5V @ 8mA | 52A Tc | 198nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXFR40N90P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/ixys-ixfr40n90p-datasheets-0936.pdf | ISOPLUS247™ | 3 | 30 Weeks | 247 | yes | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 50ns | 46 ns | 77 ns | 21A | SILICON | ISOLATED | SWITCHING | 300W Tc | 80A | 0.23Ohm | 1500 mJ | 900V | N-Channel | 14000pF @ 25V | 230m Ω @ 20A, 10V | 6.5V @ 1mA | 21A Tc | 230nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFX26N100P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixfx26n100p-datasheets-0938.pdf | TO-247-3 | 3 | 30 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 780W | 1 | FET General Purpose Power | Not Qualified | 45ns | 50 ns | 72 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 1000V | 780W Tc | 65A | 1000 mJ | 1kV | N-Channel | 11900pF @ 25V | 390m Ω @ 13A, 10V | 6.5V @ 1mA | 26A Tc | 197nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IXFX52N60Q2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfk52n60q2-datasheets-0927.pdf | TO-247-3 | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 735W | 1 | Not Qualified | 13ns | 8.5 ns | 56 ns | 52A | 30V | SILICON | DRAIN | SWITCHING | 735W Tc | 208A | 0.115Ohm | 4000 mJ | 600V | N-Channel | 6800pF @ 25V | 115m Ω @ 500mA, 10V | 4.5V @ 8mA | 52A Tc | 198nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IXFN140N25T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | GigaMOS™ HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixfn140n25t-datasheets-0987.pdf | SOT-227-4, miniBLOC | 4 | 30 Weeks | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | unknown | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 120A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 250V | 250V | 690W Tc | 400A | 0.017Ohm | 3000 mJ | N-Channel | 19000pF @ 25V | 17m Ω @ 60A, 10V | 5V @ 4mA | 120A Tc | 255nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IXFN50N50 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixfn50n50-datasheets-0988.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 90MOhm | 4 | yes | AVALANCHE RATED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | 600W | 1 | FET General Purpose Power | 60ns | 45 ns | 120 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600W Tc | 200A | 500V | N-Channel | 9400pF @ 25V | 90m Ω @ 500mA, 10V | 4.5V @ 8mA | 50A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IXFN240N15T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | GigaMOS™ | Chassis Mount | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfn240n15t2-datasheets-1009.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | unknown | 120A | NICKEL | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 830W | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X4 | 150V | 240A | 48 ns | 125ns | 145 ns | 77 ns | 240A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1 | 830W Tc | 600A | 0.0052Ohm | 2000 mJ | 150V | N-Channel | 32000pF @ 25V | 5.2m Ω @ 60A, 10V | 5V @ 8mA | 240A Tc | 460nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IXFK30N100Q2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/ixys-ixfx30n100q2-datasheets-1046.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 10mg | No SVHC | 400mOhm | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 735W | 1 | FET General Purpose Power | Not Qualified | 14ns | 10 ns | 60 ns | 30A | 30V | 1kV | SILICON | DRAIN | SWITCHING | 1000V | 5V | 735W Tc | 250 ns | 120A | 4000 mJ | 1kV | N-Channel | 8200pF @ 25V | 5 V | 400m Ω @ 15A, 10V | 5V @ 8mA | 30A Tc | 186nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| IXFN20N120P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Polar™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixfn20n120p-datasheets-3789.pdf | SOT-227-4, miniBLOC | 4 | 30 Weeks | 4 | yes | UL RECOGNIZED, AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 595W | 1 | FET General Purpose Power | Not Qualified | 45ns | 70 ns | 72 ns | 20A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1200V | 595W Tc | 50A | 0.57Ohm | 1000 mJ | 1.2kV | N-Channel | 11100pF @ 25V | 570m Ω @ 10A, 10V | 6.5V @ 1mA | 20A Tc | 193nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IXTP1R6N100D2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/ixys-ixty1r6n100d2-datasheets-1843.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 1.6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 100W Tc | TO-220AB | N-Channel | 645pF @ 25V | 10 Ω @ 800mA, 0V | 1.6A Tc | 27nC @ 5V | Depletion Mode | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXTP32N20T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixtp32n20t-datasheets-1409.pdf | TO-220-3 | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 200W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 18ns | 31 ns | 55 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 200W Tc | TO-220AB | 64A | 0.072Ohm | 250 mJ | 200V | N-Channel | 1760pF @ 25V | 72m Ω @ 16A, 10V | 4.5V @ 250μA | 32A Tc | 38nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTA1N100P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixta1n100p-datasheets-1536.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 17 Weeks | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 50W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 26ns | 24 ns | 55 ns | 1A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 50W Tc | 1A | 1.8A | 100 mJ | 1kV | N-Channel | 331pF @ 25V | 15 Ω @ 500mA, 10V | 4.5V @ 50μA | 1A Tc | 15.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTY2N100P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | Polar™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixtp2n100p-datasheets-1987.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 86W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 29ns | 27 ns | 80 ns | 2A | 20V | SILICON | DRAIN | SWITCHING | 1000V | 86W Tc | TO-252AA | 2A | 5A | 150 mJ | 1kV | N-Channel | 655pF @ 25V | 7.5 Ω @ 500mA, 10V | 4.5V @ 100μA | 2A Tc | 24.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IXTA80N12T2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-ixta80n12t2-datasheets-2126.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 120V | 120V | 325W Tc | 200A | 0.017Ohm | 400 mJ | N-Channel | 4740pF @ 25V | 17m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 80nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFA4N100P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
download | HiPerFET™, PolarP2™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixfp4n100p-datasheets-2051.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 30 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 4A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1000V | 150W Tc | 4A | 8A | 200 mJ | N-Channel | 1456pF @ 25V | 3.3 Ω @ 2A, 10V | 5V @ 250μA | 4A Tc | 26nC @ 10V | 10V | ±20V |
