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ContactInfineon Technologies AG(430)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | Height Seated (Max) | RoHS Status | Length | Width | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | Number of Functions | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Pin Count | Operating Temperature (Max) | Operating Temperature (Min) | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Analog IC - Other Type | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Screening Level | Interface IC Type | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Collector Current-Max (IC) | Collector-Emitter Voltage-Max | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Input Voltage-Nom | Input Voltage (Min) | Input Voltage (Max) | JEDEC-95 Code | Regulator Type | Turn On Time | Output Current-Max | Control Mode | Control Technique | Switcher Configuration | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Switching Frequency-Max | Feedback Cap-Max (Crss) | Dropout Voltage1-Nom | Load Regulation-Max(%) | Line Regulation-Max (%/V) | Avalanche Energy Rating (Eas) | Adjustability | Dropout Voltage1-Max | Output Voltage1-Max | Voltage Tolerance-Max | Output Voltage1-Min | Input Voltage Absolute-Max | Output Current1-Max | Turn Off Time-Nom (toff) | Operating Temperature TJ-Max | Operating Temperature TJ-Min | Gate-Emitter Voltage-Max | Gate-Emitter Thr Voltage-Max | Number of Terminals | Output Voltage1-Nom |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPB034N06L3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 167W | 60V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 90A | 360A | 0.0034Ohm | 165 mJ | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||
| BSO201SP H | Infineon Technologies AG |
Min: 1 Mult: 1 |
3 (168 Hours) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 8 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 9.3A | 59.6A | 0.008Ohm | 248 mJ | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB020N04N G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | ULTRA-LOW RESISTANCE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | 175°C | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 167W | 40V | METAL-OXIDE SEMICONDUCTOR | TO-263 | 140A | 980A | 0.002Ohm | 140 mJ | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPP90R1K2C3 | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 83W | 900V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 5.1A | 10A | 1.2Ohm | 68 mJ | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSB013NE2LXI | Infineon Technologies AG |
Min: 1 Mult: 1 |
3 (168 Hours) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | 8541.29.00.95 | e4 | Silver/Nickel (Ag/Ni) | YES | BOTTOM | NO LEAD | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-MBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 57W | 25V | METAL-OXIDE SEMICONDUCTOR | 163A | 400A | 0.0018Ohm | 130 mJ | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TLE4270-2G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | BIPOLAR | 4.4mm | RoHS Compliant | 10mm | 9.25mm | icon-pbfree yes | EAR99 | not_compliant | 8542.39.00.01 | 1 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 1.7mm | 4 | NOT SPECIFIED | Other Regulators | Not Qualified | R-PSSO-G5 | AEC-Q100 | 1 | 6V | 42V | FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR | 0.35V | 0.05% | 0.025% | FIXED | 0.7V | 5.1V | 2% | 4.9V | 65V | 0.65A | 125°C | -40°C | 5 | 5V | |||||||||||||||||||||||||||||||||||||||||
| IPP60R600C6 | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 63W | 600V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 7.3A | 19A | 0.6Ohm | 133 mJ | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLE6368G2 | Infineon Technologies AG |
Min: 1 Mult: 1 |
3 (168 Hours) | 3.5mm | RoHS Compliant | 15.9mm | 11mm | not_compliant | 8542.39.00.01 | 1 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 13.5V | 0.65mm | 60V | 5.5V | NOT SPECIFIED | R-PDSO-G36 | AEC-Q100 | INTERFACE CIRCUIT | 36 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ086P03NS3E G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | ESD PROTECTED | not_compliant | e3 | Tin (Sn) | YES | DUAL | NO LEAD | NOT SPECIFIED | 8 | 150°C | NOT SPECIFIED | 1 | Not Qualified | S-PDSO-N5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | P-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 13.5A | 160A | 0.0134Ohm | 105 mJ | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP041N12N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e3 | Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 120V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 120A | 480A | 0.0041Ohm | 900 mJ | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R380C6 | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | HIGH VOLTAGE | compliant | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 83W | 600V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 10.6A | 30A | 0.38Ohm | 210 mJ | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002 L6327 | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 3 | 150°C | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 0.5W | 60V | METAL-OXIDE SEMICONDUCTOR | 0.3A | 3Ohm | 3 pF | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD70N03S4L-04 | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | ULTRA LOW RESISTANCE | compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 68W | 30V | METAL-OXIDE SEMICONDUCTOR | TO-252AA | 70A | 280A | 0.0043Ohm | 57 mJ | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSB028N06NN3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
3 (168 Hours) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e4 | Silver/Nickel (Ag/Ni) | YES | BOTTOM | NO LEAD | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-MBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 78W | 60V | METAL-OXIDE SEMICONDUCTOR | 90A | 360A | 0.0028Ohm | 590 mJ | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB025N08N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 300W | 80V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 120A | 480A | 0.0025Ohm | 1430 mJ | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BSB165N15NZ3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
3 (168 Hours) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e4 | Silver/Nickel (Ag/Ni) | YES | BOTTOM | NO LEAD | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-MBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 78W | 150V | METAL-OXIDE SEMICONDUCTOR | 45A | 180A | 0.0165Ohm | 440 mJ | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB65R420CFD | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 650V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 8.7A | 27A | 0.42Ohm | 227 mJ | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLE4263-2ES | Infineon Technologies AG |
Min: 1 Mult: 1 |
3 | BIPOLAR | 1.7mm | RoHS Compliant | 4.9mm | 3.9mm | icon-pbfree yes | EAR99 | compliant | 8542.39.00.01 | 1 | YES | DUAL | GULL WING | NOT SPECIFIED | 1.27mm | 8 | NOT SPECIFIED | Other Regulators | Not Qualified | R-PDSO-G8 | AEC-Q100 | 1 | 5.5V | 45V | FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR | 0.35V | 0.025% | 0.025% | FIXED | 0.6V | 5.1V | 2% | 4.9V | 45V | 0.15A | 150°C | -40°C | 8 | 5V | |||||||||||||||||||||||||||||||||||||||||||
| TLE6389-2GV | Infineon Technologies AG |
Min: 1 Mult: 1 |
3 | 1.73mm | RoHS Compliant | 8.75mm | 4mm | icon-pbfree yes | EAR99 | CAN ALSO CONFIGURED AS PFM | compliant | 8542.39.00.01 | 1 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 1.27mm | 14 | SWITCHING CONTROLLER | NOT SPECIFIED | Switching Regulator or Controllers | Not Qualified | R-PDSO-G14 | 13.5V | 5V | 60V | 2.3A | CURRENT-MODE | PULSE WIDTH MODULATION | SINGLE | 420kHz | 14 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB042N03L G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 70A | 400A | 0.006Ohm | 60 mJ | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R950C6 | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 37W | 600V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 4.4A | 12A | 0.95Ohm | 46 mJ | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB039N10N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 214W | 100V | METAL-OXIDE SEMICONDUCTOR | TO-263AA | 160A | 640A | 0.0039Ohm | 340 mJ | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB320N20N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 200V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 34A | 136A | 0.032Ohm | 190 mJ | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IKP20N60T | Infineon Technologies AG |
Min: 1 Mult: 1 |
RoHS Compliant | icon-pbfree yes | EAR99 | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Insulated Gate BIP Transistors | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | COLLECTOR | POWER CONTROL | N-CHANNEL | 166W | 40A | 600V | TO-220AB | 36 ns | 299 ns | 20V | 5.7V | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ900N15NS3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | NO LEAD | 8 | 150°C | -55°C | 1 | Not Qualified | S-PDSO-N5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 38W | 150V | METAL-OXIDE SEMICONDUCTOR | 13A | 52A | 0.09Ohm | 30 mJ | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPD04N50C3 | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | AVALANCHE RATED | compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 50W | 500V | METAL-OXIDE SEMICONDUCTOR | TO-252 | 4.5A | 13.5A | 0.95Ohm | 130 mJ | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB049NE7N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 150W | 75V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 80A | 320A | 0.0049Ohm | 370 mJ | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ16DN25NS3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | NO LEAD | NOT SPECIFIED | 8 | 150°C | NOT SPECIFIED | 1 | Not Qualified | S-PDSO-N5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 250V | METAL-OXIDE SEMICONDUCTOR | 10.9A | 44A | 0.165Ohm | 120 mJ | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD034N06N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | TO-252AA | 100A | 400A | 0.0034Ohm | 149 mJ | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPA07N60C3 | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | AVALANCHE RATED | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | N-CHANNEL | 32W | 600V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 4.3A | 21.9A | 0.6Ohm | 230 mJ | 3 |
