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ContactInfineon Technologies AG(430)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | Height Seated (Max) | RoHS Status | Length | Width | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | Number of Functions | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Pin Count | Temperature Grade | Telecom IC Type | Operating Temperature (Max) | Operating Temperature (Min) | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Power Supplies | Supply Current-Max | Qualification Status | JESD-30 Code | Screening Level | Data Rate | Differential Output | Input Characteristics | Interface IC Type | Receiver Number of Bits | Number of I/O | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Breakdown Voltage | Speed | uPs/uCs/Peripheral ICs Type | Bit Size | Has ADC | DMA Channels | PWM Channels | DAC Channels | ROM Programmability | On Chip Program ROM Width | Input Voltage (Min) | Input Voltage (Max) | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Breakdown Voltage-Min | Clamping Voltage-Max | JEDEC-95 Code | Diode Type | Regulator Type | Output Current-Max | Driver Number of Bits | ROM (words) | Interface Standard | Number of Transceivers | RAM (bytes) | Clock Frequency | Address Bus Width | External Data Bus Width | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Receive Delay-Max | Dropout Voltage1-Nom | Load Regulation-Max(%) | Line Regulation-Max (%/V) | Avalanche Energy Rating (Eas) | Adjustability | Dropout Voltage1-Max | Output Voltage1-Max | Voltage Tolerance-Max | Output Voltage1-Min | Input Voltage Absolute-Max | Output Current1-Max | Operating Temperature TJ-Max | Operating Temperature TJ-Min | Number of Terminals | Output Voltage1-Nom |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SPB16N50C3 | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | AVALANCHE RATED | compliant | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 160W | 500V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 16A | 48A | 0.28Ohm | 460 mJ | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSF030NE2LQ | Infineon Technologies AG |
Min: 1 Mult: 1 |
3 (168 Hours) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | 8541.29.00.95 | e4 | Silver/Nickel (Ag/Ni) | YES | BOTTOM | NO LEAD | 2 | 150°C | -40°C | 1 | Not Qualified | R-MBCC-N2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 28W | 25V | METAL-OXIDE SEMICONDUCTOR | 75A | 300A | 0.0041Ohm | 50 mJ | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA50R199CP | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | compliant | 8541.29.00.95 | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | N-CHANNEL | 34W | 500V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 17A | 40A | 0.199Ohm | 436 mJ | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP600N25N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e3 | Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 250V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 25A | 100A | 0.06Ohm | 210 mJ | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLE7259-2GU | Infineon Technologies AG |
Min: 1 Mult: 1 |
3 (168 Hours) | BCDMOS | 1.75mm | RoHS Compliant | 5mm | 4mm | icon-pbfree yes | EAR99 | compliant | 8542.39.00.01 | 1 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 13.5V | 1.27mm | 8 | AUTOMOTIVE | 125°C | -40°C | 27V | 7V | 40 | Not Qualified | R-PDSO-G8 | NO | SCHMITT TRIGGER | LINE TRANSCEIVER | 1 | 1 | GENERAL PURPOSE | 6000 ns | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC014N03MS G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 8 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 30A | 400A | 0.00175Ohm | 340 mJ | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC900N20NS3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 8 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 200V | METAL-OXIDE SEMICONDUCTOR | 15.2A | 61A | 0.09Ohm | 100 mJ | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R125C6 | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 219W | 600V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 30A | 89A | 0.125Ohm | 636 mJ | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA50R250CP | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | N-CHANNEL | 33W | 500V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 13A | 31A | 0.25Ohm | 345 mJ | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB200N25N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 250V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 64A | 256A | 0.02Ohm | 320 mJ | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP530N15N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e3 | Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 150V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 21A | 84A | 0.053Ohm | 60 mJ | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ0901NS | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | compliant | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | R-PDSO-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 22A | 160A | 0.0026Ohm | 150 mJ | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB160N04S3-H2 | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | ULTRA LOW RESISTANCE | compliant | 8541.29.00.95 | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 214W | 40V | METAL-OXIDE SEMICONDUCTOR | TO-263 | 160A | 640A | 0.0021Ohm | 898 mJ | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLE4270-2D | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | BIPOLAR | 2.35mm | RoHS Compliant | 6.5mm | 6.22mm | icon-pbfree yes | EAR99 | not_compliant | 8542.39.00.01 | 1 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 1.14mm | 4 | NOT SPECIFIED | Other Regulators | Not Qualified | R-PSSO-G4 | AEC-Q100 | 1 | 6V | 42V | FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR | 0.35V | 0.05% | 0.025% | FIXED | 0.7V | 5.1V | 2% | 4.9V | 65V | 0.65A | 125°C | -40°C | 4 | 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB065N15N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 150V | METAL-OXIDE SEMICONDUCTOR | TO-263 | 130A | 520A | 0.0065Ohm | 780 mJ | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD30N03S4L-09 | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 42W | 30V | METAL-OXIDE SEMICONDUCTOR | TO-252 | 30A | 120A | 0.009Ohm | 28 mJ | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ESD5V3U4U-HDMI E6327 | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | AVALANCHE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | 8541.10.00.50 | e4 | Gold (Au) | UNIDIRECTIONAL | YES | BOTTOM | NO LEAD | NOT SPECIFIED | 9 | 125°C | -40°C | NOT SPECIFIED | 4 | R-PBCC-N9 | COMMON ANODE, 4 ELEMENTS | ANODE | SILICON | 5.3V | 6V | TRANS VOLTAGE SUPPRESSOR DIODE | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPD18P06P G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | P-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | TO-252AB | 18.6A | 74.4A | 0.13Ohm | 150 mJ | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R160C6 | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 176W | 600V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 23.8A | 70A | 0.16Ohm | 497 mJ | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC016N04LS G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 8 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 100A | 400A | 0.0023Ohm | 295 mJ | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC072N03LD G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | 260 | 8 | 150°C | 40 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 57W | 30V | METAL-OXIDE SEMICONDUCTOR | 20A | 80A | 0.0094Ohm | 90 mJ | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SAF-XC164CS-32F40F BB-A | Infineon Technologies AG |
Min: 1 Mult: 1 |
CMOS | 1.6mm | RoHS Compliant | 14mm | 14mm | 3A991.A.2 | compliant | 8542.31.00.01 | YES | QUAD | GULL WING | NOT SPECIFIED | 2.5V | 0.5mm | INDUSTRIAL | 85°C | -40°C | 2.7V | 2.35V | NOT SPECIFIED | S-PQFP-G100 | 79 | 40 MHz | MICROCONTROLLER, RISC | 16 | YES | NO | YES | NO | FLASH | 8 | 262144 | 12288 | 40MHz | 24 | 16 | 100 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP200N25N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 250V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 64A | 256A | 0.02Ohm | 320 mJ | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ130N03LS G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | YES | DUAL | NO LEAD | 8 | 150°C | -55°C | 1 | Not Qualified | S-PDSO-N5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 25W | 30V | METAL-OXIDE SEMICONDUCTOR | 35A | 140A | 0.013Ohm | 9 mJ | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC750N10ND G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | AVALANCHE RATED | compliant | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | 260 | 8 | 150°C | 40 | 2 | FET General Purpose Power | Not Qualified | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 26W | 100V | METAL-OXIDE SEMICONDUCTOR | 13A | 52A | 0.075Ohm | 17 mJ | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD80N04S3-06 | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | ULTRA LOW RESISTANCE | compliant | 8541.29.00.95 | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 88W | 40V | METAL-OXIDE SEMICONDUCTOR | TO-252AA | 80A | 320A | 0.0052Ohm | 125 mJ | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ130N03MS G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | DUAL | NO LEAD | NOT SPECIFIED | 8 | 175°C | NOT SPECIFIED | 1 | Not Qualified | S-PDSO-N5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 9A | 140A | 0.015Ohm | 9 mJ | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ESD8V0L2B-03L E6327 | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | AVALANCHE | RoHS Compliant | EAR99 | compliant | 8541.10.00.50 | e4 | Gold (Au) | BIDIRECTIONAL | AEC-Q101 | YES | BOTTOM | NO LEAD | NOT SPECIFIED | 125°C | -55°C | NOT SPECIFIED | 2 | Transient Suppressors | R-XBCC-N3 | SEPARATE, 2 ELEMENTS | 8.5V | SILICON | 14V | 8.5V | 26V | TRANS VOLTAGE SUPPRESSOR DIODE | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLE6250G V33 | Infineon Technologies AG |
Min: 1 Mult: 1 |
3 (168 Hours) | BICMOS | 1.75mm | RoHS Compliant | 5mm | 4mm | compliant | 8542.39.00.01 | 1 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 3.3V | 1.27mm | 8 | INTERFACE CIRCUIT | 40 | Network Interfaces | 3.35V | 0.07mA | Not Qualified | R-PDSO-G8 | AEC-Q100 | 1000 Mbps | 1 | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAS 40-05 E6327 | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | SCHOTTKY | RoHS Compliant | EAR99 | compliant | 8541.10.00.70 | e3 | Tin (Sn) | AEC-Q101 | YES | DUAL | GULL WING | NOT SPECIFIED | 150°C | -55°C | NOT SPECIFIED | 2 | R-PDSO-G3 | COMMON CATHODE, 2 ELEMENTS | SILICON | 0.25W | 40V | RECTIFIER DIODE | 0.12A | 3 |
