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ContactInfineon Technologies AG(430)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | Height Seated (Max) | RoHS Status | Length | Width | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | Number of Functions | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Pin Count | Temperature Grade | Telecom IC Type | Operating Temperature (Max) | Operating Temperature (Min) | Analog IC - Other Type | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Power Supplies | Supply Current-Max | Qualification Status | JESD-30 Code | On-State Current-Max | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Application | DS Breakdown Voltage-Min | FET Technology | Input Voltage-Nom | Input Voltage (Min) | Input Voltage (Max) | Diode Element Material | Rep Pk Reverse Voltage-Max | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Diode Type | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Non-Repetitive Pk On-state Cur | Repetitive Peak Reverse Voltage | Number of Transceivers | Trigger Device Type | DC Gate Trigger Current-Max | Control Mode | Control Technique | Switcher Configuration | Repetitive Peak Off-state Voltage | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Switching Frequency-Max | Avalanche Energy Rating (Eas) | RMS On-state Current-Max | Desc. of Quick-Connects | Desc. of Screw Terminals | Number of Terminals |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPB038N12N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 120V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 120A | 480A | 0.0038Ohm | 900 mJ | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||
| SPA03N60C3 | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | AVALANCHE RATED | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | N-CHANNEL | 29.7W | 600V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 2.8A | 9.6A | 1.4Ohm | 100 mJ | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ165N04NS G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 8 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | R-PDSO-F8 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 25W | 40V | METAL-OXIDE SEMICONDUCTOR | 31A | 124A | 0.0165Ohm | 5 mJ | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||
| IFX1050G | Infineon Technologies AG |
Min: 1 Mult: 1 |
3 | BICMOS | 1.75mm | RoHS Compliant | 5mm | 4mm | icon-pbfree yes | compliant | 8542.39.00.01 | 1 | YES | DUAL | GULL WING | 260 | 5V | 1.27mm | 8 | AUTOMOTIVE | INTERFACE CIRCUIT | 125°C | -40°C | NOT SPECIFIED | Network Interfaces | 5V | 0.07mA | Not Qualified | R-PDSO-G8 | 1 | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TLE6365G | Infineon Technologies AG |
Min: 1 Mult: 1 |
3 (168 Hours) | BCDMOS | 1.75mm | RoHS Compliant | 5mm | 4mm | icon-pbfree yes | EAR99 | compliant | 8542.39.00.01 | 1 | YES | DUAL | GULL WING | NOT SPECIFIED | 1.27mm | 8 | AUTOMOTIVE | 125°C | -40°C | SWITCHING REGULATOR | NOT SPECIFIED | Switching Regulator or Controllers | Not Qualified | R-PDSO-G8 | 5V | 4.75V | 5.25V | VOLTAGE-MODE | PULSE WIDTH MODULATION | BUCK | 115kHz | 8 | |||||||||||||||||||||||||||||||||||||||||||||||
| BSO150N03MD G | Infineon Technologies AG |
Min: 1 Mult: 1 |
3 (168 Hours) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 8 | 150°C | NOT SPECIFIED | 2 | Not Qualified | R-PDSO-G8 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 7A | 0.015Ohm | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP06N80C3 | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | AVALANCHE RATED, HIGH VOLTAGE | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 83W | 800V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 6A | 18A | 0.9Ohm | 230 mJ | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA057N06N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e3 | Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 60A | 240A | 0.0057Ohm | 77 mJ | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC014N04LS | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE | not_compliant | 8541.29.00.95 | e3 | TIN | YES | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | R-PDSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 32A | 400A | 0.0019Ohm | 170 mJ | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI045N10N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 214W | 100V | METAL-OXIDE SEMICONDUCTOR | TO-262AA | 100A | 400A | 0.0045Ohm | 340 mJ | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC16DN25NS3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 8 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 250V | METAL-OXIDE SEMICONDUCTOR | 10.9A | 44A | 0.165Ohm | 120 mJ | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB020NE7N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 75V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 120A | 480A | 0.002Ohm | 1100 mJ | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPP110N20NA | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | compliant | e3 | Matte Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 300W | 200V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 88A | 352A | 0.011Ohm | 560 mJ | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB030N08N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 7 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 80V | METAL-OXIDE SEMICONDUCTOR | 160A | 640A | 0.003Ohm | 510 mJ | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BSB044N08NN3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
3 (168 Hours) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e4 | Silver/Nickel (Ag/Ni) | YES | BOTTOM | NO LEAD | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-MBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 80V | METAL-OXIDE SEMICONDUCTOR | 18A | 360A | 0.0044Ohm | 660 mJ | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP320N20N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e3 | Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 200V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 34A | 136A | 0.032Ohm | 190 mJ | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB036N12N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 120V | METAL-OXIDE SEMICONDUCTOR | TO-263 | 180A | 720A | 0.0036Ohm | 900 mJ | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||
| DD260N16K | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | RoHS Compliant | EAR99 | HIGH RELIABILITY, UL RECOGNIZED | compliant | 8541.10.00.80 | IEC-61140 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 3 | 150°C | -40°C | NOT SPECIFIED | 2 | Rectifier Diodes | R-PUFM-X3 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ISOLATED | MEDIUM POWER | SILICON | 1600V | 30000μA | 1.32V | RECTIFIER DIODE | 8300A | 1 | 260A | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| DD260N12K | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | RoHS Compliant | EAR99 | HIGH RELIABILITY, UL RECOGNIZED | compliant | 8541.10.00.80 | IEC-61140 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 3 | 150°C | -40°C | NOT SPECIFIED | 2 | Rectifier Diodes | R-PUFM-X3 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ISOLATED | MEDIUM POWER | SILICON | 1200V | 30000μA | 1.32V | RECTIFIER DIODE | 8300A | 1 | 260A | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| DD350N16K | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | RoHS Compliant | EAR99 | HIGH RELIABILITY, UL RECOGNIZED | compliant | 8541.10.00.80 | IEC-61140 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 150°C | -40°C | NOT SPECIFIED | 2 | Rectifier Diodes | R-PUFM-X3 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ISOLATED | MEDIUM POWER | SILICON | 1600V | 30000μA | 1.28V | RECTIFIER DIODE | 11000A | 1 | 350A | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| DD350N14K | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | RoHS Compliant | UL RECOGNIZED | compliant | 8541.10.00.80 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | R-XUFM-X3 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ISOLATED | GENERAL PURPOSE | SILICON | 1400V | RECTIFIER DIODE | 11000A | 1 | 350A | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DD89N14K | Infineon Technologies AG | $110.62 |
Min: 1 Mult: 1 |
RoHS Compliant | EAR99 | UL RECOGNIZED | compliant | 8541.10.00.80 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | R-XUFM-X3 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ISOLATED | GENERAL PURPOSE | SILICON | 1400V | RECTIFIER DIODE | 2400A | 1 | 89A | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| DD98N20K | Infineon Technologies AG |
Min: 1 Mult: 1 |
RoHS Compliant | EAR99 | UL RECOGNIZED | compliant | 8541.10.00.80 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 3 | 150°C | -40°C | NOT SPECIFIED | 2 | Rectifier Diodes | R-XUFM-X3 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ISOLATED | GENERAL PURPOSE | SILICON | 2000V | 25000μA | 1.53V | RECTIFIER DIODE | 2000A | 1 | 98A | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| DD98N25K | Infineon Technologies AG |
Min: 1 Mult: 1 |
RoHS Compliant | UL RECOGNIZED | compliant | 8541.10.00.80 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | R-XUFM-X3 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ISOLATED | GENERAL PURPOSE | SILICON | 2500V | RECTIFIER DIODE | 2000A | 1 | 98A | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DD98N22K | Infineon Technologies AG |
Min: 1 Mult: 1 |
RoHS Compliant | EAR99 | UL RECOGNIZED | compliant | 8541.10.00.80 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 3 | 150°C | -40°C | NOT SPECIFIED | 2 | Rectifier Diodes | R-XUFM-X3 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ISOLATED | GENERAL PURPOSE | SILICON | 2200V | 25000μA | 1.53V | RECTIFIER DIODE | 2000A | 1 | 98A | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| DDB6U104N16RR | Infineon Technologies AG |
Min: 1 Mult: 1 |
RoHS Compliant | EAR99 | compliant | 8541.10.00.80 | 150°C | 6 | Bridge Rectifier Diodes | BRIDGE, 6 ELEMENTS | 1600V | 1.3V | BRIDGE RECTIFIER DIODE | 650A | 105A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DT92N16KOF | Infineon Technologies AG |
Min: 1 Mult: 1 |
RoHS Compliant | compliant | 8541.30.00.80 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 5 | 130°C | NOT SPECIFIED | 1 | Silicon Controlled Rectifiers | Not Qualified | R-XUFM-X5 | 92000A | SINGLE WITH BUILT-IN SERIES DIODE | ISOLATED | 1800 A | 1600V | SCR | 120mA | 1600V | 160A | G-GR | A-K-AK | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DZ540N26K | Infineon Technologies AG |
Min: 1 Mult: 1 |
RoHS Compliant | EAR99 | compliant | 8541.10.00.80 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-XUFM-X2 | SINGLE | ISOLATED | GENERAL PURPOSE | SILICON | 2600V | RECTIFIER DIODE | 14000A | 1 | 732A | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DZ600N14K | Infineon Technologies AG |
Min: 1 Mult: 1 |
RoHS Compliant | UL RECOGNIZED | compliant | 8541.10.00.80 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 2 | 150°C | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-XUFM-X2 | SINGLE | ISOLATED | GENERAL PURPOSE | SILICON | 1400V | RECTIFIER DIODE | 19000A | 1 | 735A | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DZ600N16K | Infineon Technologies AG |
Min: 1 Mult: 1 |
RoHS Compliant | unknown | NO | 2 | 150°C | 1 | Rectifier Diodes | SINGLE | 1600V | RECTIFIER DIODE | 19000A | 735A |
