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ContactGeneSiC Semiconductor(3996)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | RoHS Status | Published | Datasheet | Package / Case | Factory Lead Time | Weight | REACH SVHC | Number of Pins | ECCN Code | Evaluation Kit | Surface Mount | Max Power Dissipation | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Subcategory | Continuous Drain Current (ID) | Configuration | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Function | Power Dissipation-Max | Drain to Source Breakdown Voltage | Input Capacitance (Ciss) (Max) @ Vds | Primary Attributes | Supplied Contents | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Manufacturer: | Product Category: | RoHS: | Type: | Mounting Style: | Package / Case: | If - Forward Current: | Peak Reverse Voltage: | Minimum Operating Temperature: | Maximum Operating Temperature: | Series: | Packaging: | Brand: | Ir - Reverse Current: | Product: | Product Type: | Factory Pack Quantity:Factory Pack Quantity: | Subcategory: | Technology: |
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| 2N7640-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~225°C TJ | Bulk | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | Non-RoHS Compliant | 2013 | TO-276AA | 3 | Other Transistors | 16A | N-CHANNEL | 650V | 330W Tc | 1534pF @ 35V | 105m Ω @ 16A | 16A Tc 155°C | |||||||||||||||||||||||||||||||||||||||||||
| 2N7639-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~225°C TJ | Bulk | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | Non-RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-2n7639ga-datasheets-2829.pdf | TO-257-3 | 18 Weeks | 3 | EAR99 | Other Transistors | 15A | N-CHANNEL | 650V | 172W Tc | 1534pF @ 35V | 105m Ω @ 15A | 15A Tc 155°C | ||||||||||||||||||||||||||||||||||||||||
| GA16JT17-247 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-ga16jt17247-datasheets-6164.pdf | TO-247-3 | 18 Weeks | No SVHC | 3 | EAR99 | Single | Other Transistors | 16A | N-CHANNEL | 1700V | 282W Tc | 1.7kV | 110m Ω @ 16A | 16A Tc 90°C | ||||||||||||||||||||||||||||||||||||||
| GA06JT12-247 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-ga06jt12247-datasheets-6286.pdf | TO-247-3 | 18 Weeks | 38.000013g | 3 | 146W | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 6A | 1200V | 220m Ω @ 6A | 6A Tc 90°C | |||||||||||||||||||||||||||||||||||||||
| 2N7638-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~225°C TJ | Bulk | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | Non-RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-2n7638ga-datasheets-3433.pdf | TO-276AA | 18 Weeks | No SVHC | 3 | EAR99 | Other Transistors | 8A | N-CHANNEL | 650V | 200W Tc | 720pF @ 35V | 170m Ω @ 8A | 8A Tc 158°C | |||||||||||||||||||||||||||||||||||||||
| GA03JT12-247 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-ga03jt12247-datasheets-6293.pdf | TO-247-3 | 18 Weeks | 6.390011g | 3 | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 3A | 1200V | 15W Tc | 460m Ω @ 3A | 3A Tc 95°C | |||||||||||||||||||||||||||||||||||||||
| GA05JT12-247 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2016 | TO-247-3 | 18 Weeks | No SVHC | 3 | EAR99 | NO | Other Transistors | 5A | N-CHANNEL | 1200V | 106W Tc | 280m Ω @ 5A | 5A Tc | |||||||||||||||||||||||||||||||||||||||||
| GA10JT12-247 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-ga10jt12247-datasheets-0691.pdf | TO-247-3 | 18 Weeks | No SVHC | 3 | EAR99 | NO | Other Transistors | 10A | N-CHANNEL | 1200V | 170W Tc | 140m Ω @ 10A | 10A Tc | ||||||||||||||||||||||||||||||||||||||||
| GA20JT12-247 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2016 | TO-247-3 | 18 Weeks | Unknown | 3 | EAR99 | NO | Other Transistors | 20A | N-CHANNEL | 1200V | 282W Tc | 70m Ω @ 20A | 20A Tc | |||||||||||||||||||||||||||||||||||||||||
| GA100SBJT12-FR4 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-ga100sbjt12fr4-datasheets-3845.pdf | 18 Weeks | 4 | Yes | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA15IDDJT22-FR4 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-ga15iddjt22fr4-datasheets-6879.pdf | 18 Weeks | 4 | Yes | Gate Driver | Isolated | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||
| GA03IDDJT30-FR4 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-ga03iddjt30fr4-datasheets-0699.pdf | 18 Weeks | 4 | Yes | Gate Driver | Isolated | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||
| GA20JT12-263 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2014 | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 18 Weeks | 3 | YES | Other Transistors | 45A | N-CHANNEL | 1200V | 282W Tc | 3091pF @ 800V | 60m Ω @ 20A | 45A Tc | ||||||||||||||||||||||||||||||||||||||||||
| GA05JT01-46 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~225°C TJ | Bulk | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-ga05jt0146-datasheets-2708.pdf | TO-46-3 | 18 Weeks | 3 | 9A | 100V | 20W Tc | 240m Ω @ 5A | 9A Tc | ||||||||||||||||||||||||||||||||||||||||||||
| GA05JT03-46 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~225°C TJ | Bulk | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-ga05jt0346-datasheets-4010.pdf | TO-46-3 | 18 Weeks | 3 | 9A | 300V | 20W Tc | 240m Ω @ 5A | 9A Tc | ||||||||||||||||||||||||||||||||||||||||||||
| GBJ25D | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Yes with exemptions | /files/genesicsemiconductor-gbj25d-datasheets-1422.pdf | 4 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GBJ25B | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Yes with exemptions | /files/genesicsemiconductor-gbj25d-datasheets-1422.pdf | 4 | Single | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| KBJ808 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
GeneSiC Semiconductor | Bridge Rectifiers | Details | Single Phase Bridge | Through Hole | KBJ | 8 A | 800 V | - 55 C | + 150 C | KBJ | Bulk | GeneSiC Semiconductor | 8 A | Bridge Rectifier | Bridge Rectifiers | 250 | Diodes & Rectifiers | Si |
