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ContactGeneSiC Semiconductor(3996)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | RoHS Status | Published | Datasheet | Package / Case | Height | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | ECCN Code | HTS Code | Polarity | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Operating Temperature (Max) | Operating Temperature (Min) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Configuration | Case Connection | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Application | Speed | Diode Element Material | Power Dissipation-Max | Reverse Current-Max | Forward Voltage-Max | Diode Type | Max Reverse Voltage (DC) | Collector Emitter Breakdown Voltage | Collector Emitter Saturation Voltage | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Collector Emitter Voltage (VCEO) | Max Collector Current | Input | Voltage - DC Reverse (Vr) (Max) | Voltage - Collector Emitter Breakdown (Max) | Input Capacitance (Ciss) (Max) @ Vds | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction | Current - Collector Cutoff (Max) | Vce(on) (Max) @ Vge, Ic | IGBT Type | NTC Thermistor | Input Capacitance (Cies) @ Vce | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MBRH15045RL | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh15045rl-datasheets-2860.pdf | D-67 | 1 | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 150°C | -55°C | 1 | R-PUFM-X1 | SINGLE | ANODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5000μA | Schottky, Reverse Polarity | 45V | 150A | 2000A | 1 | 45V | 5mA @ 45V | 600mV @ 150A | ||||||||||||||||||||||||||||||||||||||||||||||||
| MBRH15035RL | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh15035rl-datasheets-2861.pdf | D-67 | 1 | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 150°C | -55°C | 1 | R-PUFM-X1 | SINGLE | ANODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | Schottky, Reverse Polarity | 35V | 150A | 2000A | 1 | 35V | 3mA @ 35V | 600mV @ 150A | ||||||||||||||||||||||||||||||||||||||||||||||||
| MBRH15040L | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh15040l-datasheets-2862.pdf | D-67 | 1 | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 150°C | -55°C | 1 | R-PUFM-X1 | SINGLE | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5000μA | Schottky | 40V | 150A | 2000A | 1 | 40V | 5mA @ 40V | 600mV @ 150A | ||||||||||||||||||||||||||||||||||||||||||||||||
| MBRH15030L | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh15030l-datasheets-2864.pdf | D-67 | 1 | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PUFM-X1 | SINGLE | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | Schottky | 30V | 150A | 2000A | 1 | 30V | 3mA @ 30V | 580mV @ 150A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||
| MBRH15035L | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh15035l-datasheets-2870.pdf | D-67 | 1 | UPPER | UNSPECIFIED | 150°C | -55°C | 1 | R-PUFM-X1 | SINGLE | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | Schottky | 35V | 150A | 2000A | 1 | 35V | 3mA @ 35V | 600mV @ 150A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRH20030RL | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh20030rl-datasheets-2871.pdf | D-67 | 1 | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 150°C | 1 | R-PUFM-X1 | SINGLE | ANODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | Schottky, Reverse Polarity | 30V | 200A | 3000A | 1 | 30V | 3mA @ 30V | 580mV @ 200A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| MBRH20035RL | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh20035rl-datasheets-2878.pdf | D-67 | 1 | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 150°C | -55°C | 1 | R-PUFM-X1 | SINGLE | ANODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | Schottky, Reverse Polarity | 35V | 200A | 3000A | 1 | 35V | 3mA @ 200V | 600mV @ 200A | ||||||||||||||||||||||||||||||||||||||||||||||||
| MBRH20045RL | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh20045rl-datasheets-2879.pdf | D-67 | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky, Reverse Polarity | 45V | 200A | 45V | 5mA @ 45V | 600mV @ 200A | 200A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRH15030RL | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh15030rl-datasheets-2881.pdf | D-67 | 1 | UPPER | UNSPECIFIED | 150°C | -55°C | 1 | R-PUFM-X1 | SINGLE | ANODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | 0.58V | Schottky, Reverse Polarity | 30V | 150A | 2000A | 1 | 30V | 3mA @ 30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRH20045L | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh20045l-datasheets-2894.pdf | D-67 | D-67 | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 45V | 200A | 45V | 5mA @ 45V | 600mV @ 200A | 200A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRH20040L | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh20040l-datasheets-2902.pdf | D-67 | 1 | UPPER | UNSPECIFIED | 150°C | -55°C | 1 | R-PUFM-X1 | SINGLE | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5000μA | Schottky | 40V | 200A | 3000A | 1 | 40V | 5mA @ 40V | 600mV @ 200A | ||||||||||||||||||||||||||||||||||||||||||||||||||
| MBRH15045L | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh15045l-datasheets-2910.pdf | D-67 | 1 | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 150°C | -55°C | 1 | R-PUFM-X1 | SINGLE | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5000μA | Schottky | 45V | 150A | 2000A | 1 | 45V | 5mA @ 45V | 600mV @ 150A | ||||||||||||||||||||||||||||||||||||||||||||||||
| MBRH20040RL | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh20040rl-datasheets-2948.pdf | D-67 HALF-PAK | 1 | EAR99 | 8541.10.00.80 | NO | UPPER | UNSPECIFIED | 150°C | -55°C | 1 | R-PUFM-X1 | SINGLE | ANODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5000μA | Schottky, Reverse Polarity | 40V | 200A | 3000A | 1 | 40V | 5mA @ 40V | 600mV @ 200A | ||||||||||||||||||||||||||||||||||||||||||||||||
| MBRH20020RL | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh20020rl-datasheets-3060.pdf | D-67 | 1 | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 150°C | -55°C | 1 | R-PUFM-X1 | SINGLE | ANODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | Schottky, Reverse Polarity | 20V | 200A | 3000A | 1 | 20V | 3mA @ 20V | 580mV @ 200mA | ||||||||||||||||||||||||||||||||||||||||||||||||
| GB100XCP12-227 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -40°C~175°C TJ | Bulk | 1 (Unlimited) | RoHS Compliant | /files/genesicsemiconductor-gb100xcp12227-datasheets-2223.pdf | SOT-227-4 | 18 Weeks | 30.000004g | 4 | EAR99 | NPN | 8.55nF | Single | 1.2kV | 1.9V | 2V | 100A | Standard | 1200V | 1mA | 2V @ 15V, 100A | PT | No | 8.55nF @ 25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA08JT17-247 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-ga08jt17247-datasheets-6677.pdf | TO-247-3 | 18 Weeks | No SVHC | 3 | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 91W | 28ns | 50 ns | 73 ns | 8A | 1700V | 48W Tc | 250m Ω @ 8A | 8A Tc 90°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA100SCPL12-227E | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | RoHS Compliant | 2015 | SOT-227 | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA10JT12-263 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2014 | TO-263 | 18 Weeks | No SVHC | 3 | EAR99 | Other Transistors | 25A | N-CHANNEL | 1200V | 170W Tc | 1403pF @ 800V | 120m Ω @ 10A | 25A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA05JT12-263 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 18 Weeks | No SVHC | 3 | EAR99 | YES | Other Transistors | 15A | N-CHANNEL | 1200V | 106W Tc | 15A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA50JT12-247 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2016 | TO-247-3 | 18 Weeks | No SVHC | 3 | EAR99 | NO | Other Transistors | 50A | N-CHANNEL | 1200V | 583W Tc | 7209pF @ 800V | 25m Ω @ 50A | 100A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA50JT06-258 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~225°C TJ | Bulk | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-ga50jt06258-datasheets-4618.pdf | TO-258-3, TO-258AA | 18 Weeks | 3 | 100A | 600V | 769W Tc | 25m Ω @ 50A | 100A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA10SICP12-263 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 18 Weeks | 25A | 1200V | 170W Tc | 1403pF @ 800V | 100m Ω @ 10A | 25A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA20SICP12-247 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-ga20sicp12247-datasheets-7864.pdf | TO-247-3 | 18 Weeks | 45A | 1200V | 282W Tc | 3091pF @ 800V | 50m Ω @ 20A | 45A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA100JT17-227 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | SOT-227-4, miniBLOC | 18 Weeks | 160A | 1700V | 535W Tc | 14400pF @ 800V | 10m Ω @ 100A | 160A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA100JT12-227 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2016 | SOT-227-4, miniBLOC | 18 Weeks | 160A | 1200V | 535W Tc | 14400pF @ 800V | 10m Ω @ 100A | 160A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA50JT12-263 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | RoHS Compliant | TO-263 | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7636-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~225°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | Non-RoHS Compliant | 2013 | TO-276AA | 18 Weeks | 3 | EAR99 | Other Transistors | 4A | N-CHANNEL | 650V | 125W Tc | 324pF @ 35V | 415m Ω @ 4A | 4A Tc 165°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7637-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~225°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | Non-RoHS Compliant | 2013 | TO-257-3 | 18 Weeks | No SVHC | 3 | EAR99 | Other Transistors | 7A | N-CHANNEL | 650V | 80W Tc | 720pF @ 35V | 170m Ω @ 7A | 7A Tc 165°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA04JT17-247 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2013 | /files/genesicsemiconductor-ga04jt17247-datasheets-6136.pdf | TO-247-3 | 25.934mm | 18 Weeks | No SVHC | 3 | EAR99 | NPN | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 106W | 10 ns | 28ns | 50 ns | 19 ns | 15A | 1700V | 106W Tc | 480m Ω @ 4A | 4A Tc 95°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7635-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~225°C TJ | Bulk | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | Non-RoHS Compliant | 2013 | TO-257-3 | 18 Weeks | Unknown | 3 | EAR99 | Other Transistors | 4A | N-CHANNEL | 650V | 47W Tc | 324pF @ 35V | 415m Ω @ 4A | 4A Tc 165°C |
