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ContactGeneSiC Semiconductor(3996)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | HTS Code | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Operating Temperature (Max) | Operating Temperature (Min) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Max Forward Surge Current (Ifsm) | Max Repetitive Reverse Voltage (Vrrm) | Reverse Current-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N8033-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n8033ga-datasheets-2982.pdf | TO-276AA | 24 Weeks | EAR99 | 8541.10.00.80 | 1N8033 | 250°C | Single | 1 | Rectifier Diodes | 5A | 2.5V | 1.38 °C/W | No Recovery Time > 500mA (Io) | 32A | 650V | 0ns | Silicon Carbide Schottky | 650V | 4.3A | 8A | 274pF @ 1V 1MHz | 5μA @ 650V | 1.65V @ 5A | 4.3A DC | -55°C~250°C | |||||||||||||||||||||||||||||||||
| 1N8032-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n8032ga-datasheets-2985.pdf | TO-257-3 | Contains Lead | 24 Weeks | EAR99 | 8541.10.00.80 | 1N8032 | 250°C | Single | 1 | Rectifier Diodes | 2.5A | 1.7V | 3.4 °C/W | No Recovery Time > 500mA (Io) | 32A | 650V | 0ns | Silicon Carbide Schottky | 650V | 2.5A | 8A | 274pF @ 1V 1MHz | 5μA @ 650V | 1.3V @ 2.5A | -55°C~250°C | |||||||||||||||||||||||||||||||||
| 1N8026-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n8026ga-datasheets-2988.pdf | TO-257-3 | Contains Lead | 24 Weeks | 1N8026 | Single | TO-257 | 2.5A | 1.6V | 3.4 °C/W | No Recovery Time > 500mA (Io) | 30A | 1.2kV | 0 s | Silicon Carbide Schottky | 1.2kV | 2.5A | 237pF @ 1V 1MHz | 1200V | 10μA @ 1200V | 1.6V @ 2.5A | 8A DC | -55°C~250°C | ||||||||||||||||||||||||||||||||||||
| 1N8028-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n8028ga-datasheets-2992.pdf | TO-257-3 | 24 Weeks | EAR99 | 8541.10.00.80 | 1N8028 | 250°C | Single | 1 | Rectifier Diodes | 10A | 2.3V | 1.08 °C/W | No Recovery Time > 500mA (Io) | 45A | 1.2kV | 0ns | Silicon Carbide Schottky | 1.2kV | 9.4A | 30A | 884pF @ 1V 1MHz | 1200V | 20μA @ 1200V | 1.6V @ 10A | 9.4A DC | -55°C~250°C | ||||||||||||||||||||||||||||||||
| 1N8030-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | -55°C | Non-RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n8030ga-datasheets-2994.pdf | TO-257-3 | Contains Lead | 24 Weeks | EAR99 | 8541.10.00.80 | 1N8030 | 1 | Rectifier Diodes | 750mA | 1.4V | SINGLE | 9.52 °C/W | No Recovery Time > 500mA (Io) | 10A | 650V | 0ns | Silicon Carbide Schottky | 650V | 750mA | 2.5A | 76pF @ 1V 1MHz | 5μA @ 650V | 1.39V @ 750mA | -55°C~250°C | |||||||||||||||||||||||||||||||||
| 1N8024-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n8024ga-datasheets-3000.pdf | TO-257-3 | Contains Lead | 24 Weeks | 3 | 1N8024 | TO-257 | 750mA | 1.7V | 9.52 °C/W | No Recovery Time > 500mA (Io) | 8A | 1.2kV | 0 s | Silicon Carbide Schottky | 1.2kV | 750mA | 66pF @ 1V 1MHz | 1200V | 10μA @ 1200V | 1.74V @ 750mA | 750mA | -55°C~250°C | ||||||||||||||||||||||||||||||||||||
| 1N8031-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n8031ga-datasheets-3004.pdf | TO-276AA | Contains Lead | 24 Weeks | EAR99 | 8541.10.00.80 | 1N8031 | 250°C | Single | 1 | Rectifier Diodes | 1A | 2.3V | 3.55 °C/W | No Recovery Time > 500mA (Io) | 10A | 650V | 0ns | Silicon Carbide Schottky | 650V | 1A | 4A | 76pF @ 1V 1MHz | 5μA @ 650V | 1.5V @ 1A | -55°C~250°C | |||||||||||||||||||||||||||||||||
| GB10SLT12-220 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2015 | TO-220-2 | 2 | 18 Weeks | No SVHC | 2 | EAR99 | PD-CASE | 8541.10.00.80 | 42W | NOT SPECIFIED | GB10SLT12 | Single | NOT SPECIFIED | 1 | 10A | 1.8V | 65A | 52μA | CATHODE | EFFICIENCY | 0.8 °C/W | No Recovery Time > 500mA (Io) | 1.2kV | 0ns | 25 ns | Silicon Carbide Schottky | 1.2kV | 10A | 1 | 520pF @ 1V 1MHz | 1200V | 40μA @ 1200V | 1.8V @ 10A | -55°C~175°C | |||||||||||||||||||||||
| GB02SLT12-220 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2005 | /files/genesicsemiconductor-gb02slt12220-datasheets-1160.pdf | TO-220-2 | 2 | 18 Weeks | No SVHC | 2 | EAR99 | PD-CASE | 8541.10.00.80 | 42W | NOT SPECIFIED | GB02SLT12 | Single | NOT SPECIFIED | 1 | 2A | 2.9V | 18A | 8μA | CATHODE | EFFICIENCY | 2.32 °C/W | No Recovery Time > 500mA (Io) | 1.2kV | 0ns | 17 ns | Silicon Carbide Schottky | 1.2kV | 2A | 1 | 2A | 138pF @ 1V 1MHz | 1200V | 50μA @ 1200V | 1.8V @ 2A | -55°C~175°C | |||||||||||||||||||||
| GB05SLT12-220 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2015 | TO-220-2 | 2 | 18 Weeks | No SVHC | 2 | EAR99 | PD-CASE | 8541.10.00.80 | 42W | NOT SPECIFIED | GB05SLT12 | Single | NOT SPECIFIED | 1 | 5A | 32A | 26μA | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 1.2kV | 0ns | 25 ns | Silicon Carbide Schottky | 1.2kV | 5A | 1 | 5A | 260pF @ 1V 1MHz | 1200V | 50μA @ 1200V | 1.8V @ 2A | -55°C~175°C | ||||||||||||||||||||||||
| 1N8035-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2013 | TO-276AA | 24 Weeks | EAR99 | 8541.10.00.80 | 1N8035 | 250°C | Single | 1 | Rectifier Diodes | 15A | 2.2V | 0.49 °C/W | No Recovery Time > 500mA (Io) | 140A | 650V | 0ns | Silicon Carbide Schottky | 650V | 14.6A | 45A | 1107pF @ 1V 1MHz | 5μA @ 650V | 1.5V @ 15A | 14.6A DC | -55°C~250°C | ||||||||||||||||||||||||||||||||||
| GB01SLT12-220 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2005 | TO-220-2 | 18 Weeks | No SVHC | 2 | EAR99 | 42W | NOT SPECIFIED | GB01SLT12 | Single | NOT SPECIFIED | 1A | 10A | 4μA | No Recovery Time > 500mA (Io) | 1.2kV | 0ns | 17 ns | Silicon Carbide Schottky | 1.2kV | 1A | 69pF @ 1V 1MHz | 1200V | 2μA @ 1200V | 1.8V @ 1A | -55°C~175°C | ||||||||||||||||||||||||||||||||
| 1N8034-GA | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-1n8034ga-datasheets-3503.pdf | TO-257-3 | EAR99 | 8541.10.00.80 | 1N8034 | 250°C | Single | 1 | Rectifier Diodes | 10A | 1.8V | 1.08 °C/W | No Recovery Time > 500mA (Io) | 140A | 650V | 0ns | Silicon Carbide Schottky | 650V | 9.4A | 30A | 1107pF @ 1V 1MHz | 5μA @ 650V | 1.34V @ 10A | 9.4A DC | -55°C~250°C | ||||||||||||||||||||||||||||||||||
| MBRH30020L | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh30020l-datasheets-5816.pdf | D-67 | 1 | UPPER | UNSPECIFIED | 150°C | 1 | R-PUFM-X1 | SINGLE | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | Schottky | 20V | 300A | 4000A | 1 | 20V | 3mA @ 20V | 580mV @ 300A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||
| MBRH30030L | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | D-67 | 1 | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 150°C | 1 | R-PUFM-X1 | SINGLE | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | Schottky | 30V | 300A | 4000A | 1 | 30V | 3mA @ 30V | 580mV @ 300A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||
| MBRH30035L | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | D-67 | 1 | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 150°C | 1 | R-PUFM-X1 | SINGLE | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | Schottky | 35V | 300A | 4000A | 1 | 35V | 3mA @ 35V | 600mV @ 300A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||
| MBRH30040L | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | D-67 | 1 | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 150°C | 1 | R-PUFM-X1 | SINGLE | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5000μA | Schottky | 40V | 300A | 4000A | 1 | 40V | 5mA @ 40V | 600mV @ 300A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||
| MBRH30030RL | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | D-67 | 1 | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 150°C | 1 | R-PUFM-X1 | SINGLE | ANODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | Schottky | 30V | 300A | 4000A | 1 | 30V | 3mA @ 30V | 580mV @ 300A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||
| MURH7060R | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | D-67 | 1 | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 150°C | 1 | R-PUFM-X1 | SINGLE | ANODE | SUPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 25μA | 110 ns | Standard | 600V | 70A | 1500A | 1 | 600V | 25μA @ 600V | 1.7V @ 70A | -55°C~150°C | |||||||||||||||||||||||||||||||||
| MBRH30045RL | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | D-67 | 1 | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 150°C | 1 | R-PUFM-X1 | SINGLE | ANODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5000μA | Schottky | 45V | 300A | 4000A | 1 | 45V | 5mA @ 45V | 600mV @ 300A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||
| MBRH30045L | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | D-67 | 1 | UPPER | UNSPECIFIED | 150°C | 1 | R-PUFM-X1 | SINGLE | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5000μA | Schottky | 45V | 300A | 4000A | 1 | 45V | 5mA @ 45V | 600mV @ 300A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||
| MBRH30020RL | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh30020l-datasheets-5816.pdf | D-67 | 1 | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 150°C | 1 | R-PUFM-X1 | SINGLE | ANODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | Schottky | 20V | 300A | 4000A | 1 | 20V | 3mA @ 20V | 580mV @ 300A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| MBRH30040RL | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | D-67 | 1 | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 150°C | 1 | R-PUFM-X1 | SINGLE | ANODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5000μA | Schottky | 40V | 300A | 4000A | 1 | 40V | 5mA @ 40V | 600mV @ 300A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||
| MBRH30035RL | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | D-67 | 1 | UPPER | UNSPECIFIED | 150°C | 1 | R-PUFM-X1 | SINGLE | ANODE | POWER | SILICON | 3000μA | Schottky | 35V | 300A | 4000A | 1 | 35V | 3mA @ 35V | 600mV @ 300A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||
| GAP05SLT80-220 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-gap05slt80220-datasheets-8611.pdf | Axial | 18 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 8kV | 50mA | 25pF @ 1V 1MHz | 8000V | 3.8μA @ 8000V | 4.6V @ 50mA | 50mA DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| MBRH15020L | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh15020l-datasheets-2855.pdf | D-67 | 1 | UPPER | UNSPECIFIED | 150°C | -55°C | 1 | R-PUFM-X1 | SINGLE | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | Schottky | 20V | 150A | 2000A | 1 | 20V | 3mA @ 20V | 580mV @ 150A | |||||||||||||||||||||||||||||||||||||
| MBRH15040RL | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh15040rl-datasheets-2856.pdf | D-67 | 1 | UPPER | UNSPECIFIED | 150°C | -55°C | 1 | R-PUFM-X1 | SINGLE | ANODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5000μA | Schottky, Reverse Polarity | 40V | 150A | 2000A | 1 | 40V | 5mA @ 40V | 600mV @ 150A | |||||||||||||||||||||||||||||||||||||
| MBRH20030L | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh20030l-datasheets-2857.pdf | D-67 | 1 | EAR99 | 8541.10.00.80 | UPPER | UNSPECIFIED | 150°C | 1 | R-PUFM-X1 | SINGLE | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | Schottky | 30V | 200A | 3000A | 1 | 30V | 3mA @ 30V | 580mV @ 200A | -55°C~150°C | |||||||||||||||||||||||||||||||||||
| MBRH20020L | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh20020l-datasheets-2858.pdf | D-67 | 1 | UPPER | UNSPECIFIED | 150°C | -55°C | 1 | R-PUFM-X1 | SINGLE | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | Schottky | 20V | 200A | 3000A | 1 | 20V | 3mA @ 20V | 580mV @ 200mA | |||||||||||||||||||||||||||||||||||||
| MBRH15020RL | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
download | Chassis Mount | Chassis Mount | Bulk | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/genesicsemiconductor-mbrh15020rl-datasheets-2859.pdf | D-67 | 1 | UPPER | UNSPECIFIED | 150°C | -55°C | 1 | R-PUFM-X1 | SINGLE | ANODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 3000μA | Schottky, Reverse Polarity | 20V | 150A | 2000A | 1 | 20V | 3mA @ 20V | 580mV @ 150A |
