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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Breakdown Voltage | Natural Thermal Resistance | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| C4D02120E | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Surface Mount | Surface Mount | Tube | 175°C | -55°C | RoHS Compliant | 2014 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 7.34mm | 2.388mm | 6.248mm | 6 Weeks | Unknown | 3 | No | 40.5W | Single | TO-252-2 | 5.9A | 1.8V | 18.8A | 50μA | No Recovery Time > 500mA (Io) | 19A | 150μA | 1.2kV | 18.8A | 0 s | Silicon Carbide Schottky | 1.2kV | 5.9A | 167pF @ 0V 1MHz | 1200V | 50μA @ 1200V | 1.8V @ 2A | 10A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VT4045BP-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vt4045bpm34w-datasheets-7489.pdf | TO-220-2 | 10.2362mm | 15.24mm | 4.826mm | Lead Free | 2 | 10 Weeks | Unknown | 2 | EAR99 | LOW POWER LOSS | No | 8541.10.00.80 | 3 | Single | 1 | Rectifier Diodes | 40A | 670mV | 240A | 3mA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 240A | 3mA | 45V | 240A | Schottky | 45V | 40A | 1 | 3mA @ 45V | 670mV @ 40A | 40A DC | 200°C Max | ||||||||||||||||||||||||||||||||||||||||||||||
| GB02SLT12-252 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2015 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 127pF | 2.385mm | 49 Weeks | No SVHC | 3 | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | Single | 1 | Rectifier Diodes | 175°C | 2A | 2.3 °C/W | No Recovery Time > 500mA (Io) | 200A | 200nA | 1.2kV | 0ns | Silicon Carbide Schottky | 1.2kV | 5A | 2A | 131pF @ 1V 1MHz | 1200V | 50μA @ 1200V | 1.8V @ 2A | 5A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR40250TG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2004 | /files/onsemiconductor-mbrf40250tg-datasheets-5726.pdf | 250V | 40A | TO-220-3 | 10.28mm | 15.75mm | 4.82mm | Lead Free | 3 | 9 Weeks | 4.535924g | No SVHC | 3 | ACTIVE (Last Updated: 2 hours ago) | yes | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) | Standard | NO | SINGLE | 260 | MBR40250 | 3 | Common Anode | 40 | 1 | Rectifier Diodes | 40A | 40A | 970mV | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150A | 2mA | 250V | 150A | TO-220AB | 35 ns | Schottky | 250V | 40A | 1 | 500pF @ 5V 1MHz | 30μA @ 250V | 970mV @ 40A | -65°C~150°C | ||||||||||||||||||||||||||||||||||
| MUR440RLG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2000 | /files/onsemiconductor-mur460rlg-datasheets-0772.pdf | 400V | 4A | DO-201AD, Axial | Lead Free | 2 | 5 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | e3 | Halogen Free | NO | WIRE | 260 | MUR440 | 2 | Single | 40 | 1 | Rectifier Diodes | 4A | 4A | 1.28V | 110A | ISOLATED | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 110A | 10μA | 400V | 110A | 400V | 75 ns | 75 ns | Standard | 400V | 4A | 1 | 10μA @ 400V | 1.28V @ 4A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||
| RURP3060 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | ROHS3 Compliant | 2002 | /files/onsemiconductor-rurp3060-datasheets-7515.pdf | 600V | 30A | TO-220-2 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 2 | 8 Weeks | 2.16g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) | Single | 125W | 1 | Rectifier Diodes | R-PSFM-T2 | 30A | 30A | 1.5V | 325A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 325A | 250μA | 600V | 325A | 600V | TO-220AC | 60 ns | 60 ns | Standard | 600V | 30A | 1 | 250μA @ 600V | 1.5V @ 30A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||
| V30100S-E3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2005 | /files/vishaysemiconductordiodesdivision-vb30100se38w-datasheets-5617.pdf | TO-220-3 | 10.54mm | 15.32mm | 4.7mm | Lead Free | 3 | 10 Weeks | Unknown | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | SINGLE | 3 | Common Anode | 1 | Rectifier Diodes | 30A | 910mV | 250A | 1mA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250A | 1mA | 100V | 250A | TO-220AB | Schottky | 100V | 30A | 1 | 1mA @ 100V | 910mV @ 30A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| VS-30WQ06FNHM3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | ROHS3 Compliant | 2014 | /files/vishaysemiconductordiodesdivision-vs30wq06fnhm3-datasheets-7535.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | yes | EAR99 | FREE WHEELING DIODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30WQ06 | 150°C | 10 | 1 | R-PSSO-G2 | SINGLE | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2000μA | TO-252AA | Schottky | 60V | 3.5A | 70A | 1 | 145pF @ 5V 1MHz | 60V | 2mA @ 60V | 610mV @ 3A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-15ETX06FP-N3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vs15etx06fpn3-datasheets-7538.pdf | TO-220-2 Full Pack | 2 | 14 Weeks | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | unknown | SINGLE | NOT SPECIFIED | 15ETX06 | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 15A | SINGLE | ISOLATED | HYPER FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50μA | TO-220AC | 22 ns | Standard | 600V | 15A | 1 | 50μA @ 600V | 3.2V @ 15A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LQA30T300 | Power Integrations |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Qspeed™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | RoHS Compliant | 2011 | /files/powerintegrations-lqa30t300-datasheets-7452.pdf | TO-220-2 | 2 | 4 Weeks | 2 | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | MATTE TIN | 3 | Single | 113W | 1 | 30A | 200A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250μA | 300V | 350A | 300V | 13.7 ns | 13.7 ns | Standard | 300V | 30A | 1 | 250μA @ 300V | 1.95V @ 30A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STPS30SM120ST | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ECOPACK®2 | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/stmicroelectronics-stps30sm120sfp-datasheets-0033.pdf | TO-220-3 | 3 | 11 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | SINGLE | NOT SPECIFIED | STPS30 | 150°C | NOT SPECIFIED | 1 | R-PSFM-T3 | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 275μA | TO-220AB | Schottky | 120V | 30A | 240A | 1 | 120V | 275μA @ 120V | 950mV @ 30A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| C4D02120E-TR | Cree/Wolfspeed | $1.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | RoHS Compliant | 2001 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 7 Weeks | TO-252-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 167pF @ 0V 1MHz | 1200V | 50μA @ 1200V | 1.8V @ 2A | 10A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STTH8R06G-TR | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stth8r06fp-datasheets-0239.pdf | 600V | 8A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 11 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STTH8R06 | 3 | Single | 30 | 1 | Rectifier Diodes | 8A | 8A | 2.9V | 80A | CATHODE | HIGH VOLTAGE ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 80A | 30μA | 600V | 80A | 600V | 45 ns | 45 ns | Standard | 600V | 8A | 1 | 30μA @ 600V | 2.9V @ 8A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||
| DSEI8-06A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED | Through Hole | Through Hole | Tube | Not Applicable | 150°C | -40°C | ROHS3 Compliant | 2009 | /files/ixys-dsei806a-datasheets-7465.pdf | 600V | 8A | TO-220-2 | 10.66mm | 9.66mm | 4.82mm | Lead Free | 2 | 28 Weeks | No SVHC | 2 | yes | EAR99 | No | 8541.10.00.80 | DSEI8-06 | 3 | Single | 50W | 1 | Rectifier Diodes | 8A | 8A | 1.5V | 100A | CATHODE | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 110A | 20μA | 600V | 110A | 600V | 50 ns | 50 ns | Standard | 600V | 8A | 1 | 20μA @ 600V | 1.5V @ 8A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| 1N914 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n914-datasheets-7398.pdf | DO-204AH, DO-35, Axial | 6 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | No | Single | DO-35 (DO-204AH) | 1.2V | Small Signal =< 200mA (Io), Any Speed | 500nA | 75V | 2A | 20 ns | Standard | 75V | 200mA | 4pF @ 0V 1MHz | 75V | 500nA @ 75V | 1.2V @ 50mA | 200mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-ETU3006S-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-vsetu3006sm3-datasheets-7468.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 14 Weeks | Unknown | 3 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE | No | 8541.10.00.80 | GULL WING | 4 | Single | 1 | Rectifier Diodes | R-PSSO-G2 | 30A | 2V | 200A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200A | 20nA | 600V | 200A | 600V | 45 ns | 45 ns | Standard | 600V | 30A | 1 | 30μA @ 600V | 2V @ 70A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| C3D03060E | Cree/Wolfspeed | $2.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Surface Mount | Surface Mount | Tube | Through Hole | 175°C | -55°C | RoHS Compliant | 2009 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 7.34mm | 2.388mm | 7.518mm | 6 Weeks | Unknown | 3 | No | 53W | Single | TO-252-2 | 3A | 1.7V | 100A | 50μA | No Recovery Time > 500mA (Io) | 100A | 100μA | 600V | 100A | 0 s | Silicon Carbide Schottky | 600V | 3A | 155pF @ 0V 1MHz | 600V | 50μA @ 600V | 1.7V @ 3A | 11A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TST40L200CW C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tst40l200cwc0g-datasheets-7407.pdf | TO-220-3 | 14 Weeks | TO-220AB | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 200V | 100μA @ 200V | 880mV @ 20A | 20A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4148-1 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1999 | /files/microsemicorporation-1n41481-datasheets-7410.pdf | DO-204AH, DO-35, Axial | 4pF | 1.91mm | Lead Free | 2 | 6 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | Lead, Tin | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | MIL-19500/116L | WIRE | Single | 1 | Qualified | 175°C | 100mA | 1.2V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 2A | 500nA | 75V | 2A | 75V | 5 ns | Standard | 75V | 200mA | 500nA @ 75V | 1.2V @ 100mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| BYV27-100-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-byv27100tr-datasheets-6917.pdf | 2A | 3.6mm | SOD-57, Axial | 3.9878mm | Lead Free | 2 | 12 Weeks | Unknown | 2 | yes | EAR99 | LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | e2 | WIRE | BYV27-100 | 2 | Single | 1 | Rectifier Diodes | 2A | 1.07V | 50A | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50A | 1μA | 100V | 50A | 100V | 25 ns | 25 ns | Avalanche | 100V | 2A | 1 | 2A | 1μA @ 100V | 1.07V @ 3A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| VFT2045BP-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2007 | /files/vishaysemiconductordiodesdivision-vft2045bpm34w-datasheets-7422.pdf | TO-220-2 Full Pack, Isolated Tab | 10.26mm | 15.24mm | 4.83mm | Lead Free | 2 | 10 Weeks | Unknown | 2 | EAR99 | LOW POWER LOSS | No | 8541.10.00.80 | 3 | Single | 1 | Rectifier Diodes | 20A | 660mV | 160A | 2mA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 160A | 2mA | 45V | 160A | Schottky | 45V | 20A | 1 | 2mA @ 45V | 660mV @ 20A | 20A DC | 200°C Max | |||||||||||||||||||||||||||||||||||||||||||||||
| NRVB120ESFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2005 | /files/onsemiconductor-mbr120esft1g-datasheets-8166.pdf | SOD-123 | 2.9mm | 880μm | 1.8mm | Lead Free | 2 | 5 Weeks | 2 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | YES | DUAL | FLAT | MBR120 | 2 | Single | 1 | Rectifier Diodes | 1A | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 40A | 10μA | 20V | 40A | Schottky | 20V | 1A | 1A | 10μA @ 20V | 530mV @ 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||
| DSI30-08AS-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-dsi3008astrl-datasheets-7283.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | DSI30-08 | Standard Recovery >500ns, > 200mA (Io) | Standard | 10pF @ 400V 1MHz | 800V | 40μA @ 800V | 1.29V @ 30A | 30A | -40°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CMR3U-10M TR13 PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmr3u10mtr13pbfree-datasheets-7171.pdf | DO-214AB, SMC | 2 | 42 Weeks | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | DUAL | C BEND | 260 | 175°C | 30 | 1 | R-PDSO-C2 | SINGLE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 1000V | 5μA | 100ns | Standard | 100A | 1 | 3A | 1000V | 5μA @ 1000V | 2V @ 3A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VFT3045BP-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vft3045bpm34w-datasheets-7441.pdf | TO-220-2 Full Pack, Isolated Tab | 10.26mm | 15.24mm | 4.83mm | Lead Free | 2 | 10 Weeks | Unknown | 2 | EAR99 | LOW POWER LOSS | No | 8541.10.00.80 | 3 | Single | 1 | Rectifier Diodes | 30A | 700mV | 200A | 2mA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200A | 2mA | 45V | 200A | Schottky | 45V | 30A | 1 | 2mA @ 45V | 700mV @ 30A | 30A DC | 200°C Max | |||||||||||||||||||||||||||||||||||||||||||||||
| HFA08TB60PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2004 | /files/infineontechnologies-hfa08tb60pbf-datasheets-7448.pdf | 600V | 8A | TO-220-2 | 10pF | 10.54mm | 8.76mm | 4.57mm | Contains Lead, Lead Free | 14 Weeks | 2 | No | Standard | Single | TO-220AC | 8A | 8A | 1.7V | Fast Recovery =< 500ns, > 200mA (Io) | 5μA | 600V | 60A | 55 ns | Standard | 600V | 8A | 600V | 5μA @ 600V | 1.7V @ 8A | 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| VB20100S-E3/8W | Vishay Semiconductor Diodes Division | $1.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Surface Mount, Through Hole | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vb20100se38w-datasheets-7106.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4394mm | 9.144mm | 4.826mm | Lead Free | 14 Weeks | Unknown | 2 | Tin | No | Standard | VB20100S | Single | TO-263AB | 20A | 20A | 900mV | 250A | 500μA | Fast Recovery =< 500ns, > 200mA (Io) | 250A | 500μA | 100V | 250A | Schottky | 100V | 20A | 100V | 500μA @ 100V | 900mV @ 20A | 20A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N4001G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 1998 | /files/onsemiconductor-1n4007rlg-datasheets-7952.pdf | 50V | 1A | 2.7mm | DO-204AL, DO-41, Axial | 5.1816mm | 5.2mm | 6.35mm | Lead Free | 4 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 3 days ago) | Tin | No | Standard | Halogen Free | 1N4001 | Single | DO-41 | 1A | 1A | 1.1V | 30A | 50V | Standard Recovery >500ns, > 200mA (Io) | 30A | 10μA | 50V | 30A | 50V | Standard | 50V | 1A | 50V | 10μA @ 50V | 1.1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| GB01SLT12-252 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2015 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | 2 | 35 Weeks | No SVHC | 3 | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | PD-CASE | 42W | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 175°C | R-PSSO-G2 | 6A | 10A | 4μA | CATHODE | No Recovery Time > 500mA (Io) | 65A | 1μA | 1.2kV | 0ns | 17 ns | Silicon Carbide Schottky | 1.2kV | 1A | 69pF @ 1V 1MHz | 1200V | 2μA @ 1200V | 1.8V @ 1A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-8TQ100-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vs8tq100m3-datasheets-7385.pdf | TO-220-2 | 12 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 500pF @ 5V 1MHz | 100V | 550μA @ 100V | 880mV @ 16A | 8A | -55°C~175°C |
