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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | RMS Current (Irms) | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Reverse Recovery Time-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| IDW100E60FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2009 | /files/infineontechnologies-idw100e60fksa1-datasheets-7736.pdf | TO-247-3 | Lead Free | 3 | 16 Weeks | 3 | yes | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1 | Not Qualified | 150A | 2V | FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 40μA | 600V | 400A | 120 ns | Standard | 1 | 100A | 40μA @ 600V | 2V @ 100A | 150A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT40DQ100BG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt40dq100bg-datasheets-7741.pdf | 1kV | 40A | TO-247-2 | Lead Free | 2 | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | yes | No | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 1 | R-PSFM-T2 | 40A | 40A | 3V | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100μA | 1kV | 210A | 250 ns | Standard | 1kV | 40A | 1 | 1000V | 100μA @ 1000V | 3V @ 40A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| APT60D120BG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 1997 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | 1.2kV | 60A | TO-247-2 | 60pF | 21.46mm | 25.96mm | 16.26mm | Lead Free | 2 | 25 Weeks | 6.500007g | IN PRODUCTION (Last Updated: 1 month ago) | yes | No | 8541.10.00.80 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 1 | Rectifier Diodes | 175°C | R-PSFM-T2 | 60A | 60A | 2.5V | 540A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 540A | 250μA | 1.2kV | 540A | 1.2kV | 400 ns | 400 ns | Standard | 1.2kV | 60A | 1 | 1.2kV | 1200V | 250μA @ 1200V | 2.5V @ 60A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||
| C3D06060A | Cree/Wolfspeed | $3.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2009 | TO-220-2 | 10.41mm | 15.621mm | 4.699mm | 6 Weeks | Unknown | 2 | No | 79W | Single | 6A | 1.8V | No Recovery Time > 500mA (Io) | 200A | 50μA | 600V | 70A | 0ns | Silicon Carbide Schottky | 600V | 6A | 294pF @ 0V 1MHz | 50μA @ 600V | 1.8V @ 6A | 19A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5616 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5616-datasheets-7752.pdf | A, Axial | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Yes | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | MIL-19500 | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 400V | 30A | 2 μs | Standard | 400V | 1A | 1A | 500nA @ 400V | 1.3V @ 3A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| STTH3006PI | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stth3006pi-datasheets-7754.pdf | 600V | 30A | DOP3I-2 Insulated (Straight Leads) | 15.5mm | 12.85mm | 4.6mm | Lead Free | 2 | 8 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) - annealed | 225 | STTH30 | 2 | Single | 1 | Rectifier Diodes | 30A | 30A | 1.85V | 160A | HIGH VOLTAGE ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 300A | 25μA | 600V | 300A | 600V | 70 ns | 70 ns | Standard | 600V | 30A | 1 | 25μA @ 600V | 1.85V @ 30A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||
| RURG8060-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | /files/onsemiconductor-rurg8060f085-datasheets-7759.pdf | TO-247-2 | 4 Weeks | 6.33g | yes | Single | 1 | Rectifier Diodes | 80A | 1.34V | 240A | Fast Recovery =< 500ns, > 200mA (Io) | 240A | 250μA | 600V | 90 ns | 74 ns | Standard | 600V | 80A | 600V | 250μA @ 600V | 1.6V @ 80A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-8EWF06S-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-vs8ewf02sm3-datasheets-5703.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 12 Weeks | 3 | EAR99 | FREEWHEELING DIODE, LOW LEAKAGE CURRENT | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 8EWF06 | 3 | Common Anode | 10 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 8A | 1.2V | CATHODE | FAST SOFT RECOVERY HIGH POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200A | 100μA | 600V | 150A | TO-252AA | 55 ns | Standard | 600V | 8A | 1 | 8A | 100μA @ 600V | 1.2V @ 8A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||
| SCS215AJTLL | ROHM Semiconductor | $5.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2009 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 20 Weeks | 2.000002g | No SVHC | 3 | EAR99 | not_compliant | 8541.10.00.80 | e2 | Tin/Copper (Sn/Cu) | 100W | GULL WING | NOT SPECIFIED | SCS215 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 15A | 1.55V | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 200A | 300μA | 650V | 0ns | Silicon Carbide Schottky | 650V | 15A | 1 | 550pF @ 1V 1MHz | 300μA @ 600V | 1.55V @ 15A | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||||||
| MBRB4030T4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2005 | /files/onsemiconductor-mbrb4030t4g-datasheets-7476.pdf | 30V | 40A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.29mm | 11.05mm | 4.83mm | Lead Free | 2 | 4 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | UL RECOGNIZED | No | 8541.10.00.80 | e3 | Tin (Sn) | Standard | Halogen Free | YES | GULL WING | 260 | MBRB4030 | 3 | Single | 40 | 1 | Rectifier Diodes | R-PSSO-G2 | 40A | 40A | 550mV | 300A | 350μA | CATHODE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 300A | 350μA | 30V | 300A | Schottky | 30V | 40A | 1 | 350μA @ 30V | 550mV @ 40A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| STPS30SM100SG-TR | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stps30sm100sgtr-datasheets-6929.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 11 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | STPS30 | 3 | Common Anode | 1 | R-PSSO-G2 | 30A | 870mV | 60A | 530A | 45μA | CATHODE | EFFICIENCY | 1 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 530A | 45μA | 100V | 530A | Schottky | 100V | 30A | 1 | 45μA @ 100V | 870mV @ 30A | 150°C Max | ||||||||||||||||||||||||||||||||||||||||||
| ES2J R5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Digi-Reel® | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-es2gr5g-datasheets-0339.pdf | DO-214AA, SMB | 2 | 20 Weeks | EAR99 | 8541.10.00.80 | YES | DUAL | C BEND | 150°C | 1 | R-PDSO-C2 | SINGLE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600V | 10μA | 35ns | Standard | 50A | 1 | 2A | 20pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.7V @ 2A | 2A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-HFA04SD60S-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vshfa04sd60sm3-datasheets-7579.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 13 Weeks | 3 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | GULL WING | NOT SPECIFIED | HFA04SD60 | 3 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 2.2V | CATHODE | ULTRA FAST SOFT RECOVERY HIGH POWER | SILICON | 16A | TO-252AA | Standard | 600V | 4A | 25A | 1 | 4A | 0.042μs | 3μA @ 600V | 1.8V @ 4A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| DSI30-08A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | AVALANCHE | ROHS3 Compliant | 2000 | /files/ixys-dsi3008a-datasheets-7599.pdf | TO-220-2 | 10.66mm | 16.51mm | 4.82mm | Lead Free | 2 | 28 Weeks | No SVHC | 2 | yes | EAR99 | UL RECOGNIZED | No | 8541.10.00.80 | DSI30-08 | 3 | Single | 1 | Rectifier Diodes | 30A | 1.45V | 300A | CATHODE | GENERAL PURPOSE | Standard Recovery >500ns, > 200mA (Io) | SILICON | 300A | 1mA | 800V | 330A | 800V | Standard | 800V | 30A | 1 | 10pF @ 400V 1MHz | 40μA @ 800V | 1.29V @ 30A | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||
| HFA15TB60PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Through Hole | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2007 | /files/infineontechnologies-hfa15tb60pbf-datasheets-7601.pdf | 600V | 15A | TO-220-2 | Lead Free | 14 Weeks | 2 | TO-220AC | 15A | 1.7V | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | Standard | 600V | 15A | 600V | 10μA @ 600V | 1.7V @ 15A | 15A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDH04G65C5XKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2013 | /files/infineontechnologies-idh04g65c5xksa2-datasheets-7605.pdf | TO-220-2 | Lead Free | 2 | 18 Weeks | No SVHC | 2 | yes | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | 4A | SINGLE | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 48W | 70μA | 0 s | Silicon Carbide Schottky | 650V | 4A | 1 | 4A | 130pF @ 1V 1MHz | 70μA @ 650V | 1.7V @ 4A | 4A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||
| C3D04060F | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2011 | TO-220-2 Full Pack, Isolated Tab | 10.3mm | 16.07mm | 4.9mm | 6 Weeks | Unknown | 2 | No | 13.1W | Single | TO-220-F2 | 4A | 1.7V | 110A | 50μA | No Recovery Time > 500mA (Io) | 30A | 100μA | 600V | 30A | 0 s | Silicon Carbide Schottky | 600V | 4A | 251pF @ 0V 1MHz | 600V | 50μA @ 600V | 1.7V @ 4A | 6A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STTH5R06BY-TR | STMicroelectronics | $1.67 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stth5r06bytr-datasheets-7059.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 15 Weeks | 3 | ACTIVE (Last Updated: 6 months ago) | EAR99 | FREE WHEELING DIODE | GULL WING | NOT SPECIFIED | STTH5R06 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 3.2V | 250μA | CATHODE | HIGH VOLTAGE ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50A | 35 ns | 40 ns | Standard | 600V | 5A | 1 | 30μA @ 600V | 3.2V @ 5A | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCS210AJTLL | ROHM Semiconductor | $0.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 20 Weeks | No SVHC | 3 | EAR99 | not_compliant | 8541.10.00.80 | e2 | Tin/Copper (Sn/Cu) | 83W | SINGLE | GULL WING | NOT SPECIFIED | SCS210 | Common Cathode | NOT SPECIFIED | 1 | R-PSSO-G2 | 10A | 1.35V | GENERAL PURPOSE | 1.8 °C/W | No Recovery Time > 500mA (Io) | 40A | 200μA | 650V | 0ns | Silicon Carbide Schottky | 600V | 10A | 1 | 365pF @ 1V 1MHz | 200μA @ 600V | 1.55V @ 10A | 10A DC | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||
| DSEP29-12A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFRED™ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | AVALANCHE | ROHS3 Compliant | 2000 | /files/ixys-dsep2912a-datasheets-7647.pdf | TO-220-2 | 10.66mm | 16.51mm | 4.82mm | Lead Free | 2 | 28 Weeks | No SVHC | 2 | yes | EAR99 | SNUBBER DIODE, FREE WHEELING DIODE | No | 8541.10.00.80 | 3 | Single | 1 | Rectifier Diodes | 30A | 2.75V | 200A | CATHODE | SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 170W | 200A | 250μA | 1.2kV | 200A | 1.2kV | 40 ns | 40 ns | Standard | 1.2kV | 30A | 1 | 1200V | 250μA @ 1200V | 2.75V @ 30A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| STTH3010D | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stth3010pi-datasheets-0592.pdf | 1kV | 30A | TO-220-2 | 12pF | 10.4mm | 15.75mm | 4.6mm | Lead Free | 2 | 11 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 6 months ago) | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, HIGH RELIABILITY | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | STTH30 | 3 | Single | 1 | Rectifier Diodes | 30A | 30A | 780mV | 180A | HIGH VOLTAGE ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 180A | 15μA | 1kV | 180A | 1kV | 100 ns | 100 ns | Standard | 1kV | 30A | 1 | 1000V | 15μA @ 1000V | 2V @ 30A | 175°C Max | |||||||||||||||||||||||||||||||||||||||
| C3D06060G | Cree/Wolfspeed | $5.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Surface Mount | Surface Mount | Tube | 175°C | -55°C | RoHS Compliant | 2009 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 11.05mm | 4.572mm | 10.312mm | 6 Weeks | Unknown | 2 | No | 79W | Single | TO-263-2 | 6A | 1.8V | 200A | 50μA | No Recovery Time > 500mA (Io) | 70A | 50μA | 600V | 70A | 0 s | Silicon Carbide Schottky | 600V | 6A | 295pF @ 0V 1MHz | 600V | 50μA @ 600V | 1.7V @ 6A | 19A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDH04G65C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | Not Applicable | ROHS3 Compliant | 2017 | /files/infineontechnologies-idh04g65c6xksa1-datasheets-7673.pdf | TO-220-2 | 2 | 18 Weeks | EAR99 | PD-CASE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 12A | SINGLE | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 45W | 650V | 14μA | TO-220AC | 0ns | Silicon Carbide Schottky | 1 | 205pF @ 1V 1MHz | 650V | 14μA @ 420V | 1.35V @ 4A | 12A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RURG5060 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | AVALANCHE | ROHS3 Compliant | 2002 | /files/onsemiconductor-rurg5060-datasheets-7677.pdf | 600V | 50A | TO-247-2 | 15.8mm | 20.8mm | 4.82mm | Lead Free | 2 | 4 Weeks | 6.33g | No SVHC | 2 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) | Single | 150W | 1 | Rectifier Diodes | 50A | 50A | 1.6V | 500A | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500A | 250μA | 600V | 500A | 600V | 75 ns | 75 ns | Standard | 600V | 50A | 1 | 250μA @ 600V | 1.6V @ 50A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||
| 1N4150-1 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 200°C | -65°C | Non-RoHS Compliant | 1996 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n41501-datasheets-7560.pdf | DO-204AH, DO-35, Axial | 2 | 6 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | No | 8541.10.00.70 | e0 | Tin/Lead (Sn/Pb) | WIRE | 2 | Single | 1 | Qualified | 400mA | 1V | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 75V | 500mA | 4 ns | Standard | 50V | 200mA | 100nA @ 50V | 1V @ 200mA | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-ETU3006FP-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRED Pt® | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vsetu3006fpm3-datasheets-7482.pdf | TO-220-2 Full Pack | 10.36mm | 16.07mm | 4.93mm | 2 | 14 Weeks | Unknown | 2 | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | No | 8541.10.00.80 | 2 | Single | 1 | Rectifier Diodes | 30A | 2V | 200A | ISOLATED | UFSRHP | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200A | 20nA | 600V | 200A | 600V | 45 ns | 45 ns | Standard | 600V | 30A | 1 | 30μA @ 600V | 2V @ 30A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| C4D02120E | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Surface Mount | Surface Mount | Tube | 175°C | -55°C | RoHS Compliant | 2014 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 7.34mm | 2.388mm | 6.248mm | 6 Weeks | Unknown | 3 | No | 40.5W | Single | TO-252-2 | 5.9A | 1.8V | 18.8A | 50μA | No Recovery Time > 500mA (Io) | 19A | 150μA | 1.2kV | 18.8A | 0 s | Silicon Carbide Schottky | 1.2kV | 5.9A | 167pF @ 0V 1MHz | 1200V | 50μA @ 1200V | 1.8V @ 2A | 10A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VT4045BP-M3/4W | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2012 | /files/vishaysemiconductordiodesdivision-vt4045bpm34w-datasheets-7489.pdf | TO-220-2 | 10.2362mm | 15.24mm | 4.826mm | Lead Free | 2 | 10 Weeks | Unknown | 2 | EAR99 | LOW POWER LOSS | No | 8541.10.00.80 | 3 | Single | 1 | Rectifier Diodes | 40A | 670mV | 240A | 3mA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 240A | 3mA | 45V | 240A | Schottky | 45V | 40A | 1 | 3mA @ 45V | 670mV @ 40A | 40A DC | 200°C Max | ||||||||||||||||||||||||||||||||||||||||||||||
| GB02SLT12-252 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2015 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 127pF | 2.385mm | 49 Weeks | No SVHC | 3 | PRODUCTION (Last Updated: 6 months ago) | yes | EAR99 | 8541.10.00.80 | Single | 1 | Rectifier Diodes | 175°C | 2A | 2.3 °C/W | No Recovery Time > 500mA (Io) | 200A | 200nA | 1.2kV | 0ns | Silicon Carbide Schottky | 1.2kV | 5A | 2A | 131pF @ 1V 1MHz | 1200V | 50μA @ 1200V | 1.8V @ 2A | 5A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR40250TG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Through Hole | Tube | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2004 | /files/onsemiconductor-mbrf40250tg-datasheets-5726.pdf | 250V | 40A | TO-220-3 | 10.28mm | 15.75mm | 4.82mm | Lead Free | 3 | 9 Weeks | 4.535924g | No SVHC | 3 | ACTIVE (Last Updated: 2 hours ago) | yes | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) | Standard | NO | SINGLE | 260 | MBR40250 | 3 | Common Anode | 40 | 1 | Rectifier Diodes | 40A | 40A | 970mV | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150A | 2mA | 250V | 150A | TO-220AB | 35 ns | Schottky | 250V | 40A | 1 | 500pF @ 5V 1MHz | 30μA @ 250V | 970mV @ 40A | -65°C~150°C |
