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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Polarity | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Breakdown Voltage | Speed | Diode Element Material | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Reverse Voltage (DC) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| MBR1645 | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | TO-220-2 | 17 Weeks | TO-220AC | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 1400pF @ 5V 1MHz | 45V | 1mA @ 45V | 630mV @ 16A | 16A | -55°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-50WQ03FN-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2010 | /files/vishaysemiconductordiodesdivision-vs50wq03fnm3-datasheets-7130.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 12 Weeks | 3 | EAR99 | FREE WHEELING DIODE, HIGH RELIABILITY | unknown | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 3 | Common Anode | 40 | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 5.5A | 530mV | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 320A | 3mA | 30V | 320A | Schottky | 30V | 5.5A | 1 | 590pF @ 5V 1MHz | 3mA @ 30V | 460mV @ 5A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| MBR1045G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2006 | /files/onsemiconductor-mbr1045g-datasheets-7134.pdf | 45V | 10A | TO-220-2 | 10.287mm | 15.748mm | 4.826mm | Lead Free | 8 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 4 days ago) | Tin | No | Standard | MBR1045 | Single | TO-220-2 | 10A | 10A | 840mV | 150A | 100μA | 45V | Fast Recovery =< 500ns, > 200mA (Io) | 150A | 100μA | 45V | 150A | Schottky | 45V | 10A | 45V | 100μA @ 45V | 840mV @ 20A | 10A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||
| V10P20-M3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP®, TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysemiconductordiodesdivision-v10p20m386a-datasheets-7113.pdf | TO-277, 3-PowerDFN | Lead Free | 3 | 10 Weeks | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | R-PDSO-F3 | 980mV | SINGLE | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400μA | 200V | TO-277A | Schottky | 200V | 2.4A | 180A | 1 | 400μA @ 200V | 1.34V @ 10A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| 80SQ045NG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 125°C | -65°C | ROHS3 Compliant | 2000 | /files/onsemiconductor-80sq045nrlg-datasheets-1917.pdf | 45V | 8A | 5.3mm | DO-201AA, DO-27, Axial | 9.5mm | 9.5mm | 6.35mm | Lead Free | 2 | 7 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | Tin | No | 8541.10.00.80 | e3 | Standard | Halogen Free | NO | WIRE | 260 | 80SQ045 | 2 | Single | 40 | 1 | Rectifier Diodes | 8A | 8A | 550mV | 140A | 1mA | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 140A | 1mA | 45V | 140A | Schottky | 45V | 8A | 1 | 1mA @ 45V | 550mV @ 8A | -65°C~175°C | ||||||||||||||||||||||||||||||||
| BYW80-200G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2000 | /files/onsemiconductor-byw80200g-datasheets-7151.pdf | 200V | 7A | TO-220-2 | 10.29mm | 9.27mm | 4.82mm | Lead Free | 2 | 4 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | LOW LEAKAGE CURRENT | Tin | No | 8541.10.00.80 | e3 | NO | 260 | BYW80-200 | 2 | Single | 40 | 1 | Rectifier Diodes | 8A | 8A | 1.25V | 100A | CATHODE | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100A | 10μA | 200V | 100A | 200V | 35 ns | 35 ns | Standard | 200V | 8A | 1 | 10μA @ 200V | 1.25V @ 22A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| BYW29-200G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2000 | /files/onsemiconductor-byw29200g-datasheets-7163.pdf | 200V | 8A | TO-220-2 | 10.29mm | 9.27mm | 4.82mm | Lead Free | 2 | 4 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | FREE WHEELING DIODE | Tin | No | 8541.10.00.80 | e3 | NO | 260 | BYW29-200 | 2 | Single | 40 | 1 | Rectifier Diodes | 8A | 8A | 1.3V | 100A | CATHODE | ULTRA FAST RECOVERY POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 100A | 5μA | 200V | 100A | 200V | 35 ns | 35 ns | Standard | 200V | 8A | 1 | 5μA @ 200V | 1.3V @ 20A | -65°C~175°C | |||||||||||||||||||||||||||||||||
| 19TQ015CJ | SMC Diode Solutions |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | 2015 | TO-220-2 | 17 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 2500pF @ 5V 1MHz | 15V | 10.5mA @ 15V | 360mV @ 19A | -55°C~100°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CTLHR10-06 TR13 PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-ctlhr1006tr13pbfree-datasheets-7194.pdf | 3-SMD, Flat Lead | 7 Weeks | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | Standard | 42pF @ 4V 1MHz | 600V | 10μA @ 600V | 1.7V @ 10A | 10A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STTH12R06G-TR | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stth12r06g-datasheets-4313.pdf | 600V | 12A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 11 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | FREE WHEELING DIODE | Tin | No | 8541.10.00.80 | e3 | GULL WING | 245 | STTH12R | 3 | Single | 30 | 1 | Rectifier Diodes | R-PSSO-G2 | 12A | 12A | 2.9V | 100A | CATHODE | HIGH VOLTAGE ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 45μA | 600V | 100A | 600V | 45 ns | 25 ns | Standard | 600V | 12A | 1 | 45μA @ 600V | 2.9V @ 12A | 175°C Max | ||||||||||||||||||||||||||||||||||||||||
| MUR1520G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | SCHOTTKY | ROHS3 Compliant | 2004 | /files/onsemiconductor-mur1520g-datasheets-7221.pdf | 200V | 15A | TO-220-2 | 10.29mm | 9.27mm | 4.82mm | Lead Free | 2 | 10 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | FREE WHEELING DIODE | Tin | No | 8541.10.00.80 | e3 | NO | 260 | MUR1520 | 2 | Single | 40 | 1 | Rectifier Diodes | 15A | 15A | 1.05V | 200A | CATHODE | ULTRA FAST RECOVERY POWER | 200V | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200A | 10μA | 200V | 200A | 200V | 35 ns | 35 ns | Standard | 200V | 15A | 1 | 10μA @ 200V | 1.05V @ 15A | -65°C~175°C | |||||||||||||||||||||||||||||||
| STPS4S200S | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | /files/stmicroelectronics-stps4s200uf-datasheets-6239.pdf | DO-214AB, SMC | Lead Free | 2 | 11 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | DUAL | C BEND | NOT SPECIFIED | STPS4 | 175°C | NOT SPECIFIED | 1 | R-PDSO-C2 | 4A | SINGLE | POWER | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | Schottky | 200V | 4A | 1 | 5μA @ 200V | 870mV @ 4A | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MBR2045MFST1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2012 | /files/onsemiconductor-mbr2045mfst1g-datasheets-6919.pdf | 8-PowerTDFN, 5 Leads | 5 | 7 Weeks | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | Single | 1 | Rectifier Diodes | R-PDSO-F5 | 610mV | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600μA | 45V | 400A | Schottky | 45V | 20A | 1 | 600μA @ 45V | 610mV @ 30A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SB550-E3/54 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | Not Applicable | 150°C | -65°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-sb540e373-datasheets-1010.pdf | 50V | 5A | DO-201AD, Axial | 10mm | 5.8mm | 5.8mm | Lead Free | 2 | 8 Weeks | Unknown | 2 | yes | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | Standard | WIRE | SB550 | 2 | Single | 1 | Rectifier Diodes | 5A | 5A | 650mV | 220A | 500μA | ISOLATED | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 220A | 500μA | 50V | 220A | Schottky | 50V | 5A | 1 | 500μA @ 50V | 650mV @ 5A | -65°C~150°C | |||||||||||||||||||||||||||||||||||||||
| NRVBB1060T4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SWITCHMODE™ | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2007 | /files/onsemiconductor-nrvbb1060t4g-datasheets-6945.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.29mm | 4.83mm | 9.65mm | Lead Free | 2 | 6 Weeks | 3 | ACTIVE (Last Updated: 8 hours ago) | yes | EAR99 | LOW POWER LOSS | No | 8541.10.00.80 | e3 | Tin (Sn) | YES | GULL WING | 260 | MBRB1060 | 3 | Single | 40 | 1 | R-PSSO-G2 | 10A | 950mV | 150A | 100μA | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 150A | 100μA | 60V | 150A | Schottky | 1 | 100μA @ 60V | 800mV @ 10A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||
| V10PL45-M3/86A | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eSMP®, TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-v10pl45m386a-datasheets-6937.pdf | TO-277, 3-PowerDFN | 3 | 10 Weeks | 3 | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | unknown | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | V10PL45 | Common Anode | NOT SPECIFIED | 1 | 520mV | 200A | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 200A | TO-277A | Schottky | 45V | 6A | 1 | 6A | 5mA @ 45V | 520mV @ 10A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| BYV28-600-TR | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-byv28600tr-datasheets-6958.pdf | 3.5A | SOD-64, Axial | Lead Free | 2 | 17 Weeks | Unknown | 2 | yes | EAR99 | Silver, Tin | 8541.10.00.80 | e2 | Tin/Silver (Sn/Ag) | WIRE | NOT SPECIFIED | BYV28-600 | 2 | Single | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | 3.5A | 1.35V | 90A | ISOLATED | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 90A | 5μA | 600V | 90A | 600V | 50 ns | 50 ns | Avalanche | 600V | 3.5A | 1 | 5μA @ 600V | 1.35V @ 5A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| 1N4007G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2005 | /files/onsemiconductor-1n4007rlg-datasheets-7952.pdf | 1kV | 1A | 2.7mm | DO-204AL, DO-41, Axial | 5.1816mm | 5.2mm | 6.35mm | Lead Free | 5 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 7 hours ago) | Tin | No | Standard | Halogen Free | 1N4007 | Single | DO-41 | 1A | 1A | 1.1V | 30A | 1kV | Standard Recovery >500ns, > 200mA (Io) | 30A | 10μA | 1kV | 30A | 1kV | Standard | 1kV | 1A | 1000V | 10μA @ 1000V | 1.1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| 1N4005G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2005 | /files/onsemiconductor-1n4007rlg-datasheets-7952.pdf | 600V | 1A | 2.7mm | DO-204AL, DO-41, Axial | 38.1mm | 5.2mm | 6.35mm | Lead Free | 4 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 2 days ago) | No | Standard | Halogen Free | 1N4005 | Single | DO-41 | 1A | 1A | 1.1V | 30A | 600V | Standard Recovery >500ns, > 200mA (Io) | 30A | 10μA | 600V | 30A | 600V | Standard | 600V | 1A | 600V | 10μA @ 600V | 1.1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| ES2B-E3/52T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2001 | /files/vishaysemiconductordiodesdivision-es2be352t-datasheets-6983.pdf | 100V | 2A | DO-214AA, SMB | 18pF | 4.5466mm | 2.24mm | 3.937mm | Lead Free | 2 | 22 Weeks | Unknown | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | No | 8541.10.00.80 | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | ES2B | 2 | Single | 40 | 1 | Rectifier Diodes | 2A | 2A | 900mV | 50A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50A | 10μA | 100V | 50A | 100V | 30 ns | 30 ns | Standard | 100V | 2A | 1 | 18pF @ 4V 1MHz | 10μA @ 100V | 900mV @ 2A | -55°C~150°C | |||||||||||||||||||||||||||||||||
| MBRM120ET3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -65°C | ROHS3 Compliant | 2011 | /files/onsemiconductor-mbrm120et1g-datasheets-5645.pdf | 20V | 1A | DO-216AA | 2.05mm | 2.18mm | 1.15mm | Lead Free | 1 | 14 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 23 hours ago) | yes | EAR99 | Tin | No | 8541.10.00.80 | e3 | Standard | Halogen Free | YES | GULL WING | 260 | MBRM120 | 2 | Single | 40 | 1 | Rectifier Diodes | R-PSSO-G1 | 1A | 1A | 530mV | 50A | 10μA | CATHODE | 20V | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50A | 10μA | 20V | 50A | Schottky | 20V | 1A | 10μA @ 20V | 530mV @ 1A | -65°C~150°C | |||||||||||||||||||||||||||||||||||
| 1N4002G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2005 | /files/onsemiconductor-1n4007rlg-datasheets-7952.pdf | 100V | 1A | 2.7mm | DO-204AL, DO-41, Axial | 5.1816mm | 5.2mm | 6.35mm | Lead Free | 5 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 10 hours ago) | No | Standard | Halogen Free | 1N4002 | Single | DO-41 | 1A | 1A | 1.1V | 30A | 100V | Standard Recovery >500ns, > 200mA (Io) | 30A | 10μA | 100V | 30A | 100V | Standard | 100V | 1A | 100V | 10μA @ 100V | 1.1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| MBR2045EMFST1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -65°C | ROHS3 Compliant | 2007 | /files/onsemiconductor-mbr2045emfst1g-datasheets-6968.pdf | 8-PowerTDFN, 5 Leads | 6.15mm | 1mm | 5.15mm | 5 | 5 Weeks | 506.605978mg | 5 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | Rectifier Diodes | 20A | 510mV | CATHODE | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 400A | 100mA | 45V | 400A | Schottky | 45V | 20A | 1 | 45V | 400μA @ 45V | 640mV @ 20A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||
| CMSH5-150HV TR13 PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmsh5100hvtr13pbfree-datasheets-5209.pdf | DO-214AB, SMC | 28 Weeks | YES | 175°C | 1 | Rectifier Diodes | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 150V | Schottky | 100A | 5A | 150V | 50μA @ 150V | 800mV @ 5A | 5A | -60°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDH333 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2015 | /files/onsemiconductor-fdll300a-datasheets-7384.pdf | 150V | 200mA | DO-204AH, DO-35, Axial | 6pF | 6.35mm | 6.35mm | 6.35mm | Lead Free | 2 | 2 Weeks | 80g | No SVHC | 2 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | 8541.10.00.70 | e3 | WIRE | FDH333 | Single | 500mW | 1 | Rectifier Diodes | 200mA | 200mA | 1.15V | 4A | ISOLATED | Small Signal =< 200mA (Io), Any Speed | SILICON | 1A | 3nA | 150V | 4A | 150V | Standard | 125V | 200mA | 6pF @ 0V 1MHz | 3nA @ 125V | 1.15V @ 300mA | 175°C Max | ||||||||||||||||||||||||||||||||||||||
| 1N4006G | ON Semiconductor | $0.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2005 | /files/onsemiconductor-1n4007rlg-datasheets-7952.pdf | 800V | 1A | 2.7mm | DO-204AL, DO-41, Axial | 5.1816mm | 6.35mm | 6.35mm | Lead Free | 8 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 2 days ago) | No | Standard | Halogen Free | 1N4006 | Single | Axial | 1A | 1A | 1.1V | 30A | 800V | Standard Recovery >500ns, > 200mA (Io) | 30A | 10μA | 800V | 30A | 800V | Standard | 800V | 1A | 800V | 10μA @ 800V | 1.1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| ES2G-E3/52T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud, Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-es2fe35bt-datasheets-3226.pdf | 400V | 2A | DO-214AA, SMB | 15pF | 4.5466mm | 2.413mm | 3.937mm | Lead Free | 2 | 22 Weeks | Unknown | 2 | yes | EAR99 | FREE WHEELING DIODE | Tin | No | 2A | 8541.10.00.80 | e3 | 400V | DUAL | C BEND | 260 | ES2G | 2 | Single | 30 | 1 | Rectifier Diodes | 2A | 2A | 1.1V | 50A | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 50A | 10μA | 400V | 50A | 400V | 35 ns | 35 ns | Standard | 400V | 2A | 1 | 15pF @ 4V 1MHz | 10μA @ 400V | 1.1V @ 2A | -55°C~150°C | |||||||||||||||||||||||||||||||
| 1N4004G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2005 | /files/onsemiconductor-1n4007rlg-datasheets-7952.pdf | 400V | 1A | 2.7mm | DO-204AL, DO-41, Axial | 8.89mm | 5.2mm | 6.35mm | Lead Free | 7 Weeks | 4.535924g | No SVHC | 2 | ACTIVE (Last Updated: 3 days ago) | Tin | No | Standard | Halogen Free | 1N4004 | Single | DO-41 | 1A | 1A | 1.1V | 30A | 400V | Standard Recovery >500ns, > 200mA (Io) | 30A | 10μA | 400V | 30A | 400V | Standard | 400V | 1A | 400V | 10μA @ 400V | 1.1V @ 1A | 1A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| VSSB310-E3/52T | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TMBS® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2011 | /files/vishaysemiconductordiodesdivision-vssb310e352t-datasheets-6747.pdf | DO-214AA, SMB | 2 | 11 Weeks | 2 | yes | EAR99 | FREE WHEELING DIODE, LOW POWER LOSS | Tin | unknown | 8541.10.00.80 | e3 | DUAL | C BEND | 260 | VSSB310 | 2 | Single | 40 | 1 | Rectifier Diodes | Not Qualified | 3A | 700mV | 80A | 250μA | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 250nA | 100V | 80A | Schottky | 100V | 1.9A | 1 | 230pF @ 4V 1MHz | 250μA @ 100V | 700mV @ 3A | 1.9A DC | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||
| CMS11(TE12L,Q,M) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | RoHS Compliant | 1997 | SOD-128 | 2 | 12 Weeks | 2 | EAR99 | FREE WHEELING DIODE | Silver, Tin | No | 8541.10.00.80 | e3 | Tin (Sn) | DUAL | FLAT | CMS11 | 2 | Single | 1 | 550mV | 30A | 500μA | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500μA | 40V | 30A | Schottky | 40V | 2A | 1 | 2A | 95pF @ 10V 1MHz | 500μA @ 40V | 550mV @ 2A | -40°C~150°C |
