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ContactSingle-Phase Diode Rectifier(36732)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Output Current | Forward Current | Forward Voltage | Max Surge Current | Max Reverse Leakage Current | Configuration | Case Connection | Application | Natural Thermal Resistance | Speed | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | Max Forward Surge Current (Ifsm) | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Reverse Voltage | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Reverse Recovery Time | Recovery Time | Diode Type | Max Reverse Voltage (DC) | Average Rectified Current | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) | Operating Temperature - Junction |
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| R5011415XXZT | Powerex Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud Mount | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/powerexinc-r5011415xxzt-datasheets-8011.pdf | DO-205AA, DO-8, Stud | Standard Recovery >500ns, > 200mA (Io) | 7μs | Standard, Reverse Polarity | 1400V | 30mA @ 1400V | 150A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDLL4448-D87Z |
Min: 1 Mult: 1 |
0 | 0x0x0 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SK154-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2008 | /files/microcommercialco-sk153tp-datasheets-5312.pdf | DO-214AB, SMC | 2 | 8 Weeks | yes | EAR99 | not_compliant | 8541.10.00.80 | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | 260 | SK154 | 2 | 10 | 1 | Not Qualified | R-PDSO-C2 | SINGLE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 40V | Schottky | 275A | 1 | 15A | 500pF @ 4V 1MHz | 40V | 1mA @ 40V | 550mV @ 15A | 15A | -55°C~125°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-123NQ100PBF | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Panel, Screw | Chassis Mount | Bulk | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysemiconductordiodesdivision-vs123nq100pbf-datasheets-8023.pdf | D-67 HALF-PAK | 39.62mm | 15.11mm | 19.69mm | 1 | 14 Weeks | 2 | EAR99 | FREE WHEELING DIODE | No | UPPER | UNSPECIFIED | Single | 1 | R-PUFM-X1 | 120A | 12.8kA | 3mA | CATHODE | GENERAL PURPOSE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 12.8kA | 3mA | 100V | 12.8kA | Schottky | 1 | 2650pF @ 5V 1MHz | 3mA @ 100V | 910mV @ 120A | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| GB05MPS17-247 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 1 (Unlimited) | RoHS Compliant | TO-247-2 | 14 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 334pF @ 1V 1MHz | 1700V | 6μA @ 1700V | 1.8V @ 5A | 25A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R5001415XXZT | Powerex Inc. | $131.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Stud Mount | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/powerexinc-r5011415xxzt-datasheets-8011.pdf | DO-205AA, DO-8, Stud | Standard Recovery >500ns, > 200mA (Io) | 7μs | Standard | 1400V | 30mA @ 1400V | 150A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| C5D05170H | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-Rec® | Through Hole | Not Applicable | TO-247-2 | 11 Weeks | TO-247-2 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 425pF @ 0V 1MHz | 1700V | 200μA @ 1700V | 1.8V @ 5A | 18A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 1N5618 | Microsemi Corporation | $6.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5616-datasheets-7752.pdf | A, Axial | Contains Lead | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 3 weeks ago) | no | EAR99 | HIGH RELIABILITY, METALLURGICALLY BONDED | Lead, Tin | Yes | 8541.10.00.80 | e0 | TIN LEAD | WIRE | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 600V | 30A | 2 μs | Standard | 600V | 1A | 1A | 500nA @ 600V | 1.3V @ 3A | -65°C~200°C | ||||||||||||||||||||||||||||||||||||||||||
| IDWD20G120C5XKSA1 | Infineon Technologies | $20.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Not Applicable | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-idwd20g120c5xksa1-datasheets-7970.pdf | TO-247-2 | 16 Weeks | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 1368pF @ 1V 1MHz | 1200V | 166μA @ 1200V | 1.65V @ 20A | 62A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCS220KGC | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | ROHS3 Compliant | 2007 | /files/rohm-scs220kgc-datasheets-4017.pdf | TO-220-2 | 9.8mm | 15.37mm | 4.45mm | Lead Free | 2 | 12 Weeks | Unknown | 2 | EAR99 | 8541.10.00.80 | NOT SPECIFIED | SCS220 | Single | NOT SPECIFIED | 210W | 1 | 20A | 1.4V | CATHODE | GENERAL PURPOSE | 0.71 °C/W | No Recovery Time > 500mA (Io) | 310A | 400μA | 1.2kV | 0ns | Silicon Carbide Schottky | 1.2kV | 20A | 1 | 1060pF @ 1V 1MHz | 1200V | 400μA @ 1200V | 1.6V @ 20A | 20A DC | 175°C Max | ||||||||||||||||||||||||||||||||||||||||||||
| 1N5554 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5554-datasheets-7989.pdf | B, Axial | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | Yes | Single | 5A | 1.3V | Standard Recovery >500ns, > 200mA (Io) | 1μA | 1kV | 100A | 2 μs | Standard | 1kV | 3A | 1000V | 1μA @ 1000V | 1.2V @ 9A | 3A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UES1106 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Bulk | Not Applicable | 150°C | -55°C | Non-RoHS Compliant | 1996 | https://pdf.utmel.com/r/datasheets/microsemicorporation-ues1106-datasheets-7991.pdf | A, Axial | Contains Lead | 2 | 8 Weeks | 2 | no | No | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | WIRE | Single | 1 | 1A | 1.25V | ISOLATED | EFFICIENCY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 10μA | 400V | 20A | 50 ns | Standard | 400V | 1A | 1 | 2A | 10μA @ 400V | 1.25V @ 1A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||||||||||
| VS-25F120 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud, Surface Mount | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2000 | /files/vishaysemiconductordiodesdivision-vs25f40-datasheets-7911.pdf | DO-203AA, DO-4, Stud | 12.69mm | 31.8mm | 11mm | 1 | 13 Weeks | Unknown | 2 | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | O-MUPM-D1 | 25A | 900mV | 373A | CATHODE | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 373A | 12mA | 1.2kV | 373A | 1.2kV | 3 ns | Standard | 1.2kV | 25A | 1 | 1200V | 12mA @ 1200V | 1.3V @ 78A | -65°C~175°C | |||||||||||||||||||||||||||||||||||||||
| 1N5614US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 200°C | -65°C | AVALANCHE | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5618us-datasheets-0738.pdf | SQ-MELF, A | Contains Lead | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY | Lead, Tin | Yes | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | Not Qualified | 1.3V | ISOLATED | Standard Recovery >500ns, > 200mA (Io) | SILICON | 500nA | 200V | 30A | 2 μs | Standard | 200V | 1A | 1A | 500nA @ 200V | 1.3V @ 3A | -65°C~200°C | |||||||||||||||||||||||||||||||||||||||||
| IDW75D65D1XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -40°C | ROHS3 Compliant | 2013 | /files/infineontechnologies-idw75d65d1xksa1-datasheets-7921.pdf | TO-247-3 | Lead Free | 3 | 16 Weeks | 3 | yes | FREE WHEELING DIODE, PD-CASE | Halogen Free | SINGLE | NOT SPECIFIED | Common Anode | NOT SPECIFIED | 1 | 150A | CATHODE | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 40μA | 650V | 580A | 127 ns | Standard | 650V | 150A | 1 | 40μA @ 650V | 1.7V @ 75A | 150A DC | -40°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||||
| DSEI60-10A | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | Not Applicable | 150°C | -40°C | ROHS3 Compliant | 2000 | /files/ixys-dsei6010a-datasheets-7925.pdf&product=ixys-dsei6010a-5980030 | 1kV | 60A | TO-247-2 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 2 | 20 Weeks | No SVHC | 2 | yes | EAR99 | No | 8541.10.00.80 | 3 | Single | 189W | 1 | Rectifier Diodes | 60A | 65A | 2.3V | 540A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 500A | 3mA | 1kV | 540A | 1kV | 50 ns | 50 ns | Standard | 1kV | 60A | 1 | 1000V | 3mA @ 1000V | 2.3V @ 60A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||
| IDH10G120C5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2015 | /files/infineontechnologies-idh10g120c5xksa1-datasheets-7928.pdf | TO-220-2 | Lead Free | 2 | 16 Weeks | 2 | yes | EAR99 | HIGH RELIABILITY, PD-CASE | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | Common Cathode | NOT SPECIFIED | 1 | 31.9A | EFFICIENCY | No Recovery Time > 500mA (Io) | 165W | 62μA | 1.2kV | 99A | 0ns | Silicon Carbide Schottky | 1.2kV | 10A | 1 | 525pF @ 1V 1MHz | 1200V | 62μA @ 1200V | 1.8V @ 10A | 10A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||
| DSDI60-16A | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | Not Applicable | 150°C | -40°C | ROHS3 Compliant | 2000 | /files/ixys-dsdi6018a-datasheets-5777.pdf | 1.6kV | 63A | TO-247-2 | Lead Free | 2 | 20 Weeks | 2 | yes | EAR99 | No | 8541.10.00.80 | 3 | Single | 1 | Rectifier Diodes | 63A | 4.1V | 540A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 2mA | 1.6kV | 540A | 1.6kV | 300 ns | 300 ns | Standard | 1.6kV | 63A | 500A | 1 | 1600V | 2mA @ 1600V | 4.1V @ 70A | -40°C~150°C | ||||||||||||||||||||||||||||||||||||||||||||
| VS-100BGQ100 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Radial, Screw, Through Hole | Through Hole | Bulk | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2007 | /files/vishaysemiconductordiodesdivision-vs100bgq100-datasheets-7936.pdf | PowerTab™, PowIRtab™ | 12 Weeks | 2 | No | Single | PowIRtab™ | 100A | 6.3kA | 300μA | 0.2 °C/W | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 100V | 100A | 100V | 300μA @ 100V | 1.04V @ 100A | 100A | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-HFA08SD60S-M3 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFRED® | Surface Mount | Surface Mount | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysemiconductordiodesdivision-vshfa08sd60sm3-datasheets-7940.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 13 Weeks | 3 | EAR99 | FREE WHEELING DIODE | unknown | 8541.10.00.80 | SINGLE | GULL WING | NOT SPECIFIED | HFA08SD60 | 3 | Common Anode | NOT SPECIFIED | 1 | Rectifier Diodes | Not Qualified | R-PSSO-G2 | 2.1V | CATHODE | ULTRA FAST SOFT RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 14W | 5μA | 600V | 60A | TO-252AA | 55 ns | Standard | 600V | 8A | 1 | 8A | 5μA @ 600V | 1.7V @ 8A | -55°C~150°C | |||||||||||||||||||||||||||||||||||||||||
| 1N5809US | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-1n5809us-datasheets-7944.pdf | SQ-MELF, B | Contains Lead | 2 | 7 Weeks | 2 | IN PRODUCTION (Last Updated: 1 month ago) | no | EAR99 | HIGH RELIABILITY, METALLURGICALLY BONDED | Yes | not_compliant | 8541.10.00.80 | e0 | Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier | END | WRAP AROUND | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 1 | 6A | 875mV | ISOLATED | ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 5μA | 100V | 125A | 30 ns | Standard | 100V | 3A | 1 | 3A | 60pF @ 10V 1MHz | 5μA @ 100V | 875mV @ 4A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||
| FFSH30120A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Not Applicable | AVALANCHE | RoHS Compliant | /files/onsemiconductor-ffsh30120a-datasheets-7946.pdf | TO-247-2 | 2 | 10 Weeks | ACTIVE (Last Updated: 20 hours ago) | yes | HIGH RELIABILITY, PD-CASE | e3 | Tin (Sn) | NO | SINGLE | 175°C | 1 | R-PSFM-T2 | SINGLE | EFFICIENCY | No Recovery Time > 500mA (Io) | 500W | 1200V | 200μA | TO-247AB | 1.75V | 0ns | Silicon Carbide Schottky | 1400A | 1 | 46A | 1740pF @ 1V 100kHz | 1200V | 200μA @ 1200V | 46A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCS220AGC | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | TO-220-2 | 9.8mm | 15.37mm | 4.45mm | Lead Free | 2 | 12 Weeks | No SVHC | 2 | EAR99 | 8541.10.00.80 | 130W | NOT SPECIFIED | SCS220 | Single | NOT SPECIFIED | 130W | 1 | Rectifier Diodes | 20A | 1.55V | CATHODE | GENERAL PURPOSE | No Recovery Time > 500mA (Io) | 71A | 400μA | 650V | 260A | 0 s | Silicon Carbide Schottky | 650V | 20A | 1 | 730pF @ 1V 1MHz | 400μA @ 600V | 1.55V @ 20A | 20A DC | 175°C Max | |||||||||||||||||||||||||||||||||||||||||||
| MSC050SDA070B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | Not Applicable | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-msc010sda070k-datasheets-4425.pdf | TO-247-2 | 13 Weeks | TO-247 | No Recovery Time > 500mA (Io) | 0ns | Silicon Carbide Schottky | 700V | 1.5V @ 50A | 50A DC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDH20G65C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | Not Applicable | ROHS3 Compliant | 2017 | /files/infineontechnologies-idh20g65c6xksa1-datasheets-7903.pdf | TO-220-2 | 2 | 18 Weeks | EAR99 | PD-CASE | NO | SINGLE | NOT SPECIFIED | 175°C | NOT SPECIFIED | 1 | R-PSFM-T2 | 41A | SINGLE | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 108W | 650V | 67μA | TO-220AC | 0ns | Silicon Carbide Schottky | 1 | 970pF @ 1V 1MHz | 650V | 67μA @ 420V | 1.35V @ 20A | 41A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDH16G65C5XKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2009 | /files/infineontechnologies-idh16g65c5xksa2-datasheets-7907.pdf | TO-220-2 | 19.65mm | Lead Free | 2 | 18 Weeks | 2 | yes | PD-CASE | PG-TO220-2 | e3 | Tin (Sn) | Halogen Free | 129W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 175°C | 16A | 1.7V | 124A | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 124A | 200μA | 650V | 124A | 0ns | Silicon Carbide Schottky | 1 | 470pF @ 1V 1MHz | 200μA @ 650V | 1.7V @ 16A | 16A DC | -55°C~175°C | |||||||||||||||||||||||||||||||||||||||||||
| VS-25F40 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis, Stud | Chassis, Stud Mount | Bulk | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | 2008 | /files/vishaysemiconductordiodesdivision-vs25f40-datasheets-7911.pdf | DO-203AA, DO-4, Stud | 12.69mm | 31.8008mm | 11mm | 1 | 13 Weeks | Unknown | 2 | EAR99 | No | 8541.10.00.80 | e3 | Tin (Sn) - with Nickel (Ni) barrier | UPPER | SOLDER LUG | Single | 1 | O-MUPM-D1 | 25A | 1.3V | 373A | CATHODE | GENERAL PURPOSE | 0.5 °C/W | Standard Recovery >500ns, > 200mA (Io) | SILICON | 356A | 12mA | 400V | 373A | 400V | Standard | 400V | 25A | 1 | 12mA @ 400V | 1.3V @ 78A | -65°C~175°C | ||||||||||||||||||||||||||||||||||||||||||
| IDW16G65C5XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™+ | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2013 | /files/infineontechnologies-idw16g65c5xksa1-datasheets-7913.pdf | TO-247-3 | Lead Free | 3 | 18 Weeks | 3 | yes | EAR99 | 8541.10.00.80 | e3 | Tin (Sn) | 94W | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 16A | 95A | CATHODE | EFFICIENCY | No Recovery Time > 500mA (Io) | 200μA | 650V | 95A | 0ns | Silicon Carbide Schottky | 1 | 470pF @ 1V 1MHz | 200μA @ 650V | 1.7V @ 16A | 16A DC | -55°C~175°C | ||||||||||||||||||||||||||||||||||||||||||||||||
| DSEI30-06A | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 150°C | -40°C | ROHS3 Compliant | 2000 | /files/ixys-dsei3006a-datasheets-7846.pdf&product=ixys-dsei3006a-5980011 | 600V | 37A | TO-247-2 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 2 | 20 Weeks | No SVHC | 2 | yes | EAR99 | No | 8541.10.00.80 | 3 | Single | 125W | 1 | Rectifier Diodes | 37A | 37A | 1.6V | 320A | CATHODE | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 300A | 100μA | 600V | 320A | 600V | 50 ns | 50 ns | Standard | 600V | 37A | 1 | 100μA @ 600V | 1.6V @ 37A | -40°C~150°C | |||||||||||||||||||||||||||||||||||||||
| STTH60L06W | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | 175°C | -65°C | ROHS3 Compliant | /files/stmicroelectronics-stth60l06w-datasheets-7849.pdf | 600V | 60A | DO-247-2 (Straight Leads) | 15.75mm | 20.15mm | 5.15mm | Lead Free | 2 | 11 Weeks | No SVHC | 2 | ACTIVE (Last Updated: 7 months ago) | EAR99 | FREE WHEELING DIODE | No | 8541.10.00.80 | e3 | Tin (Sn) | SINGLE | STTH60 | 2 | Common Cathode | 1 | Rectifier Diodes | 60A | 60A | 1.55V | 400A | HIGH VOLTAGE ULTRA FAST RECOVERY | Fast Recovery =< 500ns, > 200mA (Io) | SILICON | 600A | 50μA | 600V | 400A | 600V | 105 ns | 105 ns | Standard | 600V | 60A | 1 | 50μA @ 600V | 1.55V @ 60A | 175°C Max |
