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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDPF51N25 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/onsemiconductor-fdp51n25-datasheets-3472.pdf | 250V | 28A | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 9 Weeks | 2.27g | No SVHC | 60MOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 117W | 1 | FET General Purpose Power | Not Qualified | 62 ns | 465ns | 130 ns | 98 ns | 51A | 30V | 250V | SILICON | ISOLATED | SWITCHING | 5V | 38W Tc | TO-220AB | 250V | N-Channel | 3410pF @ 25V | 5 V | 60m Ω @ 25.5A, 10V | 5V @ 250μA | 51A Tc | 70nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| BUK6D38-30EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk6d3830ex-datasheets-3020.pdf | 6-UDFN Exposed Pad | 8 Weeks | 30V | 2W Ta 19W Tc | N-Channel | 266pF @ 15V | 38m Ω @ 5.5A, 10V | 2.5V @ 250μA | 5.5A Ta 17A Tc | 8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK65E10N1,S1X | Toshiba Semiconductor and Storage | $1.00 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 | 5.4nF | 12 Weeks | 148A | 100V | 192W Tc | N-Channel | 5400pF @ 50V | 4.8m Ω @ 32.5A, 10V | 4V @ 1mA | 148A Ta | 81nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQA403EJ-T1_GE3 | Vishay Siliconix | $0.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqa403ejt1ge3-datasheets-3338.pdf | PowerPAK® SC-70-6 | 12 Weeks | PowerPAK® SC-70-6 Single | 30V | 13.6W Tc | P-Channel | 1880pF @ 10V | 20mOhm @ 5A, 10V | 2.5V @ 250μA | 10A Tc | 33nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA14BDP-T1-GE3 | Vishay Siliconix | $0.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira14bdpt1ge3-datasheets-3342.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 3.7W Ta 36W Tc | N-Channel | 917pF @ 15V | 5.38mOhm @ 10A, 10V | 2.2V @ 250μA | 21A Ta 64A Tc | 22nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF44N25T | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf44n25t-datasheets-3344.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 4 Weeks | 2.27g | No SVHC | 69mOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 38W | 1 | FET General Purpose Power | Not Qualified | 53 ns | 402ns | 112 ns | 85 ns | 44A | 30V | SILICON | ISOLATED | SWITCHING | 3V | 38W Tc | TO-220AB | 2055 mJ | 250V | N-Channel | 2870pF @ 25V | 69m Ω @ 22A, 10V | 5V @ 250μA | 44A Tc | 61nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| SISH108DN-T1-GE3 | Vishay Siliconix | $0.61 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen II | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sish108dnt1ge3-datasheets-3315.pdf | PowerPAK® 1212-8SH | 14 Weeks | PowerPAK® 1212-8SH | 20V | 1.5W Ta | N-Channel | 4.9mOhm @ 22A, 10V | 2V @ 250μA | 14A Ta | 30nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF12NK60Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf12nk60z-datasheets-3366.pdf | 600V | 10A | TO-220-3 Full Pack | Lead Free | 3 | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | STF12 | 3 | Single | NOT SPECIFIED | 35W | 1 | FET General Purpose Power | Not Qualified | 18.5ns | 31.5 ns | 55 ns | 10A | 30V | 600V | SILICON | ISOLATED | SWITCHING | 35W Tc | TO-220AB | 40A | 0.64Ohm | 260 mJ | 600V | N-Channel | 1740pF @ 25V | 3.75 V | 640m Ω @ 5A, 10V | 4.5V @ 100μA | 10A Tc | 59nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| NDP6060 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/onsemiconductor-ndp6060-datasheets-3375.pdf | 60V | 48A | TO-220-3 | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 25mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 100W | 1 | FET General Purpose Power | 10 ns | 145ns | 77 ns | 28 ns | 48A | 20V | SILICON | SWITCHING | 2.9V | 100W Tc | TO-220AB | 200 mJ | 60V | N-Channel | 1800pF @ 25V | 25m Ω @ 24A, 10V | 4V @ 250μA | 48A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SIA445EDJT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sia445edjtt1ge3-datasheets-3296.pdf | PowerPAK® SC-70-6 | 3 | 14 Weeks | EAR99 | unknown | YES | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 19W Tc | 12A | 50A | 0.0167Ohm | P-Channel | 2180pF @ 10V | 16.7m Ω @ 7A, 4.5V | 1.2V @ 250μA | 12A Tc | 69nC @ 10V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9M20-40HX | Nexperia USA Inc. | $0.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk9m2040hx-datasheets-3283.pdf | SOT-1210, 8-LFPAK33 (5-Lead) | 26 Weeks | 40V | 38W Ta | N-Channel | 763pF @ 25V | 20m Ω @ 10A, 10V | 2.2V @ 1mA | 25A Ta | 12.6nC @ 10V | 4.5V 10V | +16V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTTFS4C25NTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/onsemiconductor-nttfs4c25ntag-datasheets-3221.pdf | 8-PowerWDFN | Lead Free | 18 Weeks | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | 8 | Single | FET General Purpose Power | 8 ns | 32ns | 3 ns | 10 ns | 27A | 20V | 30V | 690mW Ta 20.2W Tc | N-Channel | 500pF @ 15V | 17m Ω @ 10A, 10V | 2.2V @ 250μA | 5A Ta 27A Tc | 10.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| RQ6E040XNTCR | ROHM Semiconductor | $0.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rq6e040xntcr-datasheets-3280.pdf | SOT-23-6 Thin, TSOT-23-6 | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 30V | 950mW Ta | N-Channel | 180pF @ 10V | 50m Ω @ 4A, 10V | 2.5V @ 1mA | 4A Ta | 3.3nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK6D23-40EX | Nexperia USA Inc. | $0.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk6d2340ex-datasheets-3355.pdf | 6-UDFN Exposed Pad | 8 Weeks | 40V | 2.3W Ta 15W Tc | N-Channel | 582pF @ 20V | 23m Ω @ 8A, 10V | 2.7V @ 250μA | 8A Ta 19A Tc | 19nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RQ5E035XNTCL | ROHM Semiconductor | $0.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SC-96 | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 30V | 700mW Ta | N-Channel | 180pF @ 10V | 50m Ω @ 3.5A, 10V | 2.5V @ 1mA | 3.5A Ta | 3.3nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBF20LPBF | Vishay Siliconix | $0.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishay-irfbf20lpbf-datasheets-9860.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | Lead Free | 8 Weeks | 2.387001g | 8Ohm | No | 1 | Single | 3.1W | 1 | I2PAK | 490pF | 8 ns | 21ns | 32 ns | 56 ns | 1.7A | 20V | 900V | 3.1W Ta 54W Tc | 8Ohm | 900V | N-Channel | 490pF @ 25V | 8Ohm @ 1A, 10V | 4V @ 250μA | 1.7A Tc | 38nC @ 10V | 8 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SIRA18BDP-T1-GE3 | Vishay Siliconix | $0.42 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira18bdpt1ge3-datasheets-3294.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 3.8W Ta 17W Tc | N-Channel | 680pF @ 15V | 6.83mOhm @ 10A, 10V | 2.4V @ 250μA | 19A Ta 40A Tc | 19nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK6D56-60EX | Nexperia USA Inc. | $0.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk6d5660ex-datasheets-3301.pdf | 6-UDFN Exposed Pad | 8 Weeks | 60V | 2W Ta 15W Tc | N-Channel | 435pF @ 30V | 56m Ω @ 4A, 10V | 2.7V @ 250μA | 4A Ta 11A Tc | 12nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN1R1-30EL,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-psmn1r130el127-datasheets-3322.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 12 Weeks | 3 | No | e3 | Tin (Sn) | NO | SINGLE | 3 | 338W | 1 | 95 ns | 213ns | 115 ns | 199 ns | 120A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 338W Tc | 1609A | 0.0014Ohm | 1900 mJ | 30V | N-Channel | 14850pF @ 15V | 1.3m Ω @ 25A, 10V | 2.2V @ 1mA | 120A Tc | 243nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| NVTFS4C25NTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvtfs4c25ntag-datasheets-3303.pdf | 8-PowerWDFN | Lead Free | 5 | 18 Weeks | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | YES | DUAL | FLAT | 8 | Single | 1 | FET General Purpose Power | S-PDSO-F5 | 4 ns | 25ns | 2 ns | 13 ns | 22.1A | 20V | SILICON | DRAIN | 30V | 30V | 3W Ta 14.3W Tc | 10.1A | 90A | 0.017Ohm | 11.2 mJ | N-Channel | 500pF @ 15V | 17m Ω @ 10A, 10V | 2.2V @ 250μA | 10.1A Ta 22.1A Tc | 10.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SSM6K406TU,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | 30V | 500mW Ta | N-Channel | 490pF @ 15V | 25m Ω @ 2A, 10V | 2.5V @ 1mA | 4.4A Ta | 12.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RQ5A020ZPTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rq5a020zptl-datasheets-3205.pdf | SC-96 | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 12V | 700mW Ta | P-Channel | 770pF @ 6V | 105m Ω @ 2A, 4.5V | 1V @ 1mA | 2A Ta | 6.5nC @ 4.5V | 1.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP315 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-261-4, TO-261AA | 4 | YES | DUAL | GULL WING | 1 | COMMERCIAL | R-PDSO-G4 | SILICON | SINGLE | DRAIN | 50V | 50V | 1.8W | 1A | 4A | P-Channel | 0.8 Ω | 1A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3H137TU,LF | Toshiba Semiconductor and Storage | $0.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 3-SMD, Flat Lead | 12 Weeks | 34V | 800mW Ta | N-Channel | 119pF @ 10V | 240m Ω @ 1A, 10V | 1.7V @ 1mA | 2A Ta | 3nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2069UFY4-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmp2069ufy47-datasheets-3213.pdf | 3-XFDFN | 3 | 15 Weeks | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 3 | 1 | 40 | 530mW | 1 | Other Transistors | 80.4 ns | 155.1ns | 423.8 ns | 688.1 ns | 2.5A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 530mW Ta | 0.054Ohm | -20V | P-Channel | 214pF @ 10V | 54m Ω @ 2.5A, 4.5V | 1V @ 250μA | 2.5A Ta | 9.1nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||
| PMPB25ENEX | Nexperia USA Inc. | $0.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmpb25enex-datasheets-3240.pdf | 6-UDFN Exposed Pad | 8 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3134KE-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/microcommercialco-si3134ketp-datasheets-3132.pdf | SOT-523 | 22 Weeks | 260 | 10 | 20V | 150mW Ta | N-Channel | 120pF @ 16V | 380m Ω @ 650mA, 4.5V | 1.1V @ 250μA | 750mA | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMPB20XNEAZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-pmpb20xneaz-datasheets-3227.pdf | 6-UDFN Exposed Pad | 6 | 8 Weeks | AEC-Q101; IEC-60134 | DUAL | NO LEAD | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | S-PDSO-N6 | 7.5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 460mW Ta 12.5W Tc | 0.02Ohm | N-Channel | 930pF @ 10V | 20m Ω @ 7.5A, 4.5V | 1.25V @ 250μA | 7.5A Ta | 15nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2393DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2393dst1ge3-datasheets-3128.pdf | TO-236-3, SC-59, SOT-23-3 | 14 Weeks | SOT-23-3 (TO-236) | 30V | 1.3W Ta 2.5W Tc | P-Channel | 980pF @ 15V | 22.7mOhm @ 5A, 10V | 2.2V @ 250μA | 6.1A Ta 7.5A Tc | 25.2nC @ 10V | 4.5V 10V | +16V, -20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMPB85ENEAX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-pmpb85eneax-datasheets-3224.pdf | 6-UDFN Exposed Pad | 6 | 8 Weeks | No | AEC-Q101; IEC-60134 | DUAL | 6 | 1 | S-PDSO-N6 | 4 ns | 3.5ns | 4.5 ns | 10.5 ns | 3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 1.6W Ta 15.6W Tc | 3A | 12A | 0.095Ohm | 12.6 mJ | N-Channel | 305pF @ 30V | 95m Ω @ 3A, 10V | 2.7V @ 250μA | 3A Ta | 9.2nC @ 10V | 4.5V 10V | ±20V |
