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MOSFET (Metal Oxide) N-Channel Tube 8Ohm @ 1A, 10V ±20V 490pF @ 25V 38nC @ 10V 900V TO-262-3 Long Leads, I2Pak, TO-262AA
- Manufacturer: Vishay Siliconix
- NO: 880-IRFBF20LPBF
- Package: TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet:
- Stock: 1596
- Description: MOSFET (Metal Oxide) N-Channel Tube 8Ohm @ 1A, 10V ±20V 490pF @ 25V 38nC @ 10V 900V TO-262-3 Long Leads, I2Pak, TO-262AA (Kg)
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| Parameters | |
|---|---|
| Drain to Source Breakdown Voltage | 900V |
| Input Capacitance | 490pF |
| Drain to Source Resistance | 8Ohm |
| Rds On Max | 8 Ω |
| Height | 9.65mm |
| Length | 10.67mm |
| Width | 4.83mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Supplier Device Package | I2PAK |
| Weight | 2.387001g |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2017 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 8Ohm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 3.1W Ta 54W Tc |
| Element Configuration | Single |
| Power Dissipation | 3.1W |
| Turn On Delay Time | 8 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 1A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 490pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Rise Time | 21ns |
| Drain to Source Voltage (Vdss) | 900V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 32 ns |
| Turn-Off Delay Time | 56 ns |
| Continuous Drain Current (ID) | 1.7A |
| Gate to Source Voltage (Vgs) | 20V |
