Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Number of Drivers | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | Nominal Supply Current | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Output Voltage | Output Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SPP20N65C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-spp20n65c3xksa1-datasheets-5034.pdf | 650V | 20.7A | TO-220-3 | Lead Free | 3 | 8 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | Halogen Free | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 208W | 1 | 5ns | 4.5 ns | 67 ns | 20.7A | 20V | 650V | SILICON | SWITCHING | 208W Tc | TO-220AB | 690 mJ | 650V | N-Channel | 2400pF @ 25V | 190m Ω @ 13.1A, 10V | 3.9V @ 1mA | 20.7A Tc | 114nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| PMCM4402UPEZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/nexperiausainc-pmcm4402upez-datasheets-5011.pdf | 4-XFBGA, WLCSP | 13 Weeks | 20V | 400mW | 65mOhm | P-Channel | 6.2nC @ 4.5V | 2.5V 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTR4501NST1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | TO-236-3, SC-59, SOT-23-3 | 2 Weeks | 1.437803g | EAR99 | e3 | Tin (Sn) | 1.25W | 1 | Single | 6.5 ns | 12ns | 3 ns | 12 ns | 3.2A | 12V | 20V | 70mOhm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMPB23XNEZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/nexperiausainc-pmpb23xnez-datasheets-5048.pdf | 6-UDFN Exposed Pad | 8 Weeks | 6-DFN2020MD (2x2) | 20V | 1.7W Ta | N-Channel | 1136pF @ 10V | 22mOhm @ 7A, 4.5V | 900mV @ 250μA | 7A Ta | 17nC @ 10V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RTL035N03FRATR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 6-SMD, Flat Leads | 6 | 16 Weeks | EAR99 | not_compliant | YES | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1W Ta | 3.5A | 0.079Ohm | N-Channel | 350pF @ 10V | 56m Ω @ 3.5A, 4.5V | 1.5V @ 1mA | 3.5A Ta | 6.4nC @ 4.5V | 2.5V 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT120N25X3HV | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixft120n25x3hv-datasheets-4945.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | 250V | 520W Tc | N-Channel | 7870pF @ 25V | 12m Ω @ 60A, 10V | 4.5V @ 4mA | 120A Tc | 122nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFB80N50Q2 | IXYS | $15.70 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixfb80n50q2-datasheets-4947.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 8 Weeks | 60mOhm | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 960W | 1 | FET General Purpose Power | 25ns | 11 ns | 60 ns | 80A | 30V | SILICON | DRAIN | SWITCHING | 960W Tc | 5000 mJ | 500V | N-Channel | 15000pF @ 25V | 60m Ω @ 500mA, 10V | 5.5V @ 8mA | 80A Tc | 250nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| DMN62D0SFD-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmn62d0sfd7-datasheets-4895.pdf | 3-UDFN | 3 | 14 Weeks | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY, LOW THRESHOLD | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Power | 3.95 ns | 3.81ns | 9.04 ns | 16 ns | 540mA | 20V | SILICON | SWITCHING | 430mW Ta | 0.54A | 0.002Ohm | 60V | N-Channel | 30.2pF @ 25V | 2 Ω @ 500mA, 10V | 2.5V @ 1mA | 540mA Ta | 0.87nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFP22N60P3 | IXYS | $1.91 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfh22n60p3-datasheets-4386.pdf | TO-220-3 | 10.66mm | 16mm | 4.83mm | 3 | 26 Weeks | 3 | AVALANCHE RATED | unknown | 3 | Single | 500W | 1 | FET General Purpose Power | Not Qualified | 28 ns | 17ns | 19 ns | 54 ns | 22A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | TO-220AB | 55A | 400 mJ | 600V | N-Channel | 2600pF @ 25V | 360m Ω @ 11A, 10V | 5V @ 1.5mA | 22A Tc | 38nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFPS38N60LPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfps38n60lpbf-datasheets-4956.pdf | TO-274AA | 15.6mm | 20.3mm | 5mm | Lead Free | 8 Weeks | Unknown | 150MOhm | 3 | No | 1 | Single | 540W | 1 | SUPER-247™ (TO-274AA) | 7.99nF | 44 ns | 130ns | 69 ns | 92 ns | 38A | 30V | 600V | 5V | 540W Tc | 120mOhm | 600V | N-Channel | 7990pF @ 25V | 150mOhm @ 23A, 10V | 5V @ 250μA | 38A Tc | 320nC @ 10V | 150 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK180N25T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfk180n25t-datasheets-4968.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 180A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 1390W Tc | 500A | 0.0129Ohm | N-Channel | 28000pF @ 25V | 12.9m Ω @ 60A, 10V | 5V @ 8mA | 180A Tc | 345nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| CEDM8001VL TR PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cedm8001vltrpbfree-datasheets-4964.pdf | SC-101, SOT-883 | 6 Weeks | 20V | 100mW Ta | P-Channel | 45pF @ 3V | 8 Ω @ 10mA, 4V | 1.1V @ 250μA | 100mA Ta | 0.66nC @ 4.5V | 1.5V 4V | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFL38N100Q2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfl38n100q2-datasheets-4910.pdf | ISOPLUS264™ | 20.29mm | 26.42mm | 5.21mm | Lead Free | 3 | 8 Weeks | 264 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 380W | 1 | FET General Purpose Power | R-PSIP-T3 | 25 ns | 28ns | 15 ns | 57 ns | 29A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 380W Tc | 0.28Ohm | 5000 mJ | 1kV | N-Channel | 13500pF @ 25V | 280m Ω @ 19A, 10V | 5.5V @ 8mA | 29A Tc | 250nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| APL502J | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apl502j-datasheets-4912.pdf | SOT-227-4, miniBLOC | 24 Weeks | ISOTOP® | 500V | 568W Tc | N-Channel | 9000pF @ 25V | 90mOhm @ 26A, 12V | 4V @ 2.5mA | 52A Tc | 15V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK39J60W5,S1VQ | Toshiba Semiconductor and Storage | $12.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | TO-3P-3, SC-65-3 | 4.1nF | 16 Weeks | Single | 270W | TO-3P(N) | 4.1nF | 50ns | 9 ns | 200 ns | 38.8A | 30V | 600V | 270W Tc | 55mOhm | 600V | N-Channel | 4100pF @ 300V | 65mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 38.8A Ta | 135nC @ 10V | Super Junction | 65 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA05JT12-263 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 18 Weeks | No SVHC | 3 | EAR99 | YES | Other Transistors | 15A | N-CHANNEL | 1200V | 106W Tc | 15A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT37M100L | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt37m100l-datasheets-4922.pdf | 1kV | 37A | TO-264-3, TO-264AA | 26.49mm | 5.21mm | 20.5mm | Lead Free | 3 | 18 Weeks | 10.6g | 330mOhm | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE RATED | Tin | No | SINGLE | 3 | 1 | R-PSFM-T3 | 44 ns | 40ns | 38 ns | 150 ns | 37A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 1135W Tc | 1kV | N-Channel | 9835pF @ 25V | 330m Ω @ 18A, 10V | 5V @ 2.5mA | 37A Tc | 305nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| APT60N60BCSG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | 600V | 60A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 24 Weeks | 38.000013g | IN PRODUCTION (Last Updated: 1 month ago) | yes | EAR99 | AVALANCHE ENERGY RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 431W | 1 | R-PSFM-T3 | 30 ns | 20ns | 10 ns | 100 ns | 60A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 431W Tc | TO-247AD | 230A | 0.045Ohm | N-Channel | 7200pF @ 25V | 45m Ω @ 44A, 10V | 3.9V @ 3mA | 60A Tc | 190nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| C3M0016120D | Cree/Wolfspeed | $32.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C3M™ | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | TO-247-3 | TO-247-3 | 1200V | 556W Tc | N-Channel | 6085pF @ 1000V | 22.3mOhm @ 75A, 15V | 3.6V @ 23mA | 115A Tc | 207nC @ 15V | 15V | +15V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK240N15T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/ixys-ixfk240n15t2-datasheets-4940.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 30 Weeks | 1 | yes | EAR99 | AVALANCHE RATED | 120A | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 150V | 240A | 125 ns | 125ns | 145 ns | 145 ns | 240A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1250W Tc | 600A | 0.0052Ohm | 2000 mJ | N-Channel | 32000pF @ 25V | 5.2m Ω @ 60A, 10V | 5V @ 8mA | 240A Tc | 460nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXFN170N25X3 | IXYS | $35.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfn170n25x3-datasheets-4943.pdf | SOT-227-4, miniBLOC | 19 Weeks | yes | unknown | 250V | 390W Tc | N-Channel | 13500pF @ 25V | 7.4m Ω @ 85A, 10V | 4.5V @ 4mA | 170A Tc | 190nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT13F120B | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt13f120b-datasheets-4878.pdf | 1.2kV | 13A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 22 Weeks | 38.000013g | 1.2Ohm | yes | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | SINGLE | 3 | 625W | 1 | R-PSFM-T3 | 26 ns | 15ns | 24 ns | 85 ns | 14A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1200V | 625W Tc | TO-247AB | 50A | N-Channel | 4765pF @ 25V | 1.4 Ω @ 7A, 10V | 5V @ 1mA | 14A Tc | 145nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| E3M0065090D | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/creewolfspeed-e3m0065090d-datasheets-4881.pdf | TO-247-3 | 13 Weeks | TO-247-3 | 900V | 125W Tc | N-Channel | 660pF @ 600V | 84.5mOhm @ 20A, 15V | 3.5V @ 5mA | 35A Tc | 30.4nC @ 15V | 15V | +18V, -8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW62N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw62n65m5-datasheets-4885.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 17 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STW62N | Single | 330W | 1 | 101 ns | 11ns | 14 ns | 8 ns | 46A | 25V | SILICON | SWITCHING | 650V | 330W Tc | 0.049Ohm | 710V | N-Channel | 6420pF @ 100V | 49m Ω @ 23A, 10V | 5V @ 250μA | 46A Tc | 142nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| APL502LG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apl502lg-datasheets-4892.pdf | 500V | 58A | TO-264-3, TO-264AA | 26.49mm | 5.21mm | 20.5mm | Lead Free | 3 | 24 Weeks | 10.6g | 90mOhm | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 730W | 1 | R-PSFM-T3 | 13 ns | 27ns | 16 ns | 56 ns | 58A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 730W Tc | 232A | 3000 mJ | 500V | N-Channel | 9000pF @ 25V | 90m Ω @ 29A, 12V | 4V @ 2.5mA | 58A Tc | 15V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| IXFH42N20 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/ixys-ixfh50n20-datasheets-1852.pdf | 200V | 42A | TO-247-3 | 3 | 8 Weeks | 3 | yes | EAR99 | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | 15ns | 16 ns | 72 ns | 42A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | TO-247AD | 168A | 0.06Ohm | 200V | N-Channel | 4400pF @ 25V | 60m Ω @ 500mA, 10V | 4V @ 4mA | 42A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| PMZB150UNEYL | Nexperia USA Inc. | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmzb150uneyl-datasheets-4903.pdf | 3-XFDFN | 8 Weeks | 3 | DFN1006B-3 | 93pF | 1.5A | 20V | 350mW Ta 6.25W Tc | 170mOhm | N-Channel | 93pF @ 10V | 200mOhm @ 1.5A, 4.5V | 950mV @ 250μA | 1.5A Ta | 1.6nC @ 4.5V | 200 mΩ | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT77N60JC3 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt77n60jc3-datasheets-4907.pdf | 600V | 77A | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 24 Weeks | 30.000004g | 4 | no | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | 4 | 1 | Single | 568W | 1 | 18 ns | 27ns | 8 ns | 110 ns | 77A | 20V | SILICON | ISOLATED | 568W Tc | 0.035Ohm | 600V | N-Channel | 13600pF @ 25V | 35m Ω @ 60A, 10V | 3.9V @ 5.4mA | 77A Tc | 640nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| STW42N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb42n65m5-datasheets-5509.pdf | TO-247-3 | 15.75mm | 24.45mm | 5.15mm | Lead Free | 3 | 17 Weeks | No SVHC | 79mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STW42N65M5 | e3 | Tin (Sn) | STW42N | 3 | 1 | Single | 190W | 1 | FET General Purpose Power | 150°C | 61 ns | 24ns | 13 ns | 65 ns | 33A | 25V | SILICON | SWITCHING | 4V | 190W Tc | 950 mJ | 650V | N-Channel | 4650pF @ 100V | 79m Ω @ 16.5A, 10V | 5V @ 250μA | 33A Tc | 100nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| TK17E80W,S1X | Toshiba Semiconductor and Storage | $3.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | 150°C | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 | 16 Weeks | TO-220 | 800V | 180W Tc | N-Channel | 2050pF @ 300V | 290mOhm @ 8.5A, 10V | 4V @ 850μA | 17A Ta | 32nC @ 10V | 10V | ±20V |
