IXFL38N100Q2

MOSFET (Metal Oxide) N-Channel Tube 280m Ω @ 19A, 10V ±30V 13500pF @ 25V 250nC @ 10V 1000V ISOPLUS264™


  • Manufacturer: IXYS
  • NO: 415-IXFL38N100Q2
  • Package: ISOPLUS264™
  • Datasheet: pdf
  • Stock: 10720
  • Description: MOSFET (Metal Oxide) N-Channel Tube 280m Ω @ 19A, 10V ±30V 13500pF @ 25V 250nC @ 10V 1000V ISOPLUS264™ (Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS264™
Number of Pins 264
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series HiPerFET™
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
JESD-30 Code R-PSIP-T3
Number of Elements 1
Power Dissipation-Max 380W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 380W
Case Connection ISOLATED
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 280m Ω @ 19A, 10V
Vgs(th) (Max) @ Id 5.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 13500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 29A Tc
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Rise Time 28ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 57 ns
Continuous Drain Current (ID) 29A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.28Ohm
Drain to Source Breakdown Voltage 1kV
Avalanche Energy Rating (Eas) 5000 mJ
Height 26.42mm
Length 20.29mm
Width 5.21mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

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