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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI7464DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7464dpt1e3-datasheets-2721.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 8 | 1 | Single | 1.8W | 1 | R-PDSO-F5 | 10 ns | 12ns | 12 ns | 15 ns | 2.8A | 20V | SILICON | DRAIN | SWITCHING | 1.8W Ta | 8A | 0.24Ohm | 0.45 mJ | 200V | N-Channel | 50ns | 35ns | 4 V | 240m Ω @ 2.8A, 10V | 4V @ 250μA | 1.8A Ta | 18nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SI7898DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7898dpt1e3-datasheets-9418.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 85mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 9 ns | 10ns | 10 ns | 24 ns | 3A | 20V | 150V | SILICON | DRAIN | SWITCHING | 4V | 1.9W Ta | 3A | 25A | 150V | N-Channel | 4 V | 85m Ω @ 3.5A, 10V | 4V @ 250μA | 3A Ta | 21nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| NTMD4184PFR2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-ntmd4184pfr2g-datasheets-2651.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 38 Weeks | 8 | ACTIVE (Last Updated: 9 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | 8 | 2.31W | 1 | Other Transistors | 7.2 ns | 12ns | 2.8 ns | 18 ns | 2.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 770mW Ta | 4A | 0.095Ohm | -30V | P-Channel | 360pF @ 10V | 95m Ω @ 3A, 10V | 3V @ 250μA | 2.3A Ta | 4.2nC @ 4.5V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIR626DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sir626dpt1re3-datasheets-2749.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | EAR99 | unknown | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 104W Tc | 100A | 200A | 0.002Ohm | 125 mJ | N-Channel | 5130pF @ 30V | 78ns | 88ns | 1.7m Ω @ 20A, 10V | 3.4V @ 250μA | 100A Tc | 78nC @ 7.5V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCMT360N65S3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fcmt360n65s3-datasheets-2777.pdf | 4-PowerTSFN | 33 Weeks | yes | not_compliant | 650V | 83W Tc | N-Channel | 730pF @ 400V | 360m Ω @ 5A, 10V | 4.5V @ 200μA | 10A Tc | 18nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RUS100N02TB | ROHM Semiconductor | $0.95 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/rohm-rus100n02tb-datasheets-7078.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 10 Weeks | No SVHC | 8mOhm | 8 | EAR99 | not_compliant | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 10A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1V | 2W Ta | 36A | N-Channel | 2250pF @ 10V | 12m Ω @ 10A, 4.5V | 1V @ 1mA | 10A Ta | 24nC @ 4.5V | 1.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ401EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | /files/vishaysiliconix-sqj401ept1ge3-datasheets-2735.pdf | PowerPAK® SO-8 | 12 Weeks | 5 | No | 83W | 1 | PowerPAK® SO-8 | 43 ns | 63ns | 166 ns | 263 ns | 32A | 8V | 12V | 83W Tc | P-Channel | 10015pF @ 6V | 6mOhm @ 15A, 4.5V | 1.5V @ 250μA | 32A Tc | 164nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR880ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir880adpt1ge3-datasheets-2763.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 8.9MOhm | 8 | EAR99 | No | C BEND | 2 | Dual | 5.4W | 1 | FET General Purpose Powers | R-PDSO-C5 | 60A | 20V | SILICON | DRAIN | SWITCHING | 1.5V | 5.4W Ta 83W Tc | 45 mJ | 80V | N-Channel | 2289pF @ 40V | 6.3m Ω @ 20A, 10V | 3V @ 250μA | 60A Tc | 72nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH6016LPSQ-13 | Diodes Incorporated | $0.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth6016lpsq13-datasheets-2598.pdf | 8-PowerTDFN | 5 | 18 Weeks | 8 | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 37A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 2.6W Ta 37.5W Tc | 75A | 0.016Ohm | 11.7 mJ | N-Channel | 864pF @ 30V | 16m Ω @ 20A, 10V | 2.5V @ 250μA | 9.8A Ta 37A Tc | 17nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5448DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-si5448dut1ge3-datasheets-3652.pdf | PowerPAK® ChipFET™ Single | 850μm | 14 Weeks | EAR99 | e3 | Tin (Sn) | 260 | 1 | 30 | 3.1W | 150°C | 10 ns | 15 ns | 15.9A | 20V | 31W Tc | 40V | N-Channel | 1765pF @ 20V | 7.75m Ω @ 15A, 10V | 2.5V @ 250μA | 25A Tc | 20nC @ 4.5V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3424BDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3424bdvt1ge3-datasheets-2612.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | 28MOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1 | FET General Purpose Power | 18 ns | 85ns | 12 ns | 17 ns | 7A | 20V | SILICON | SWITCHING | 2.1W Ta 2.98W Tc | 7A | 30V | N-Channel | 735pF @ 15V | 28m Ω @ 7A, 10V | 3V @ 250μA | 8A Tc | 19.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| PSMN6R1-30YLDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-psmn6r130yldx-datasheets-2360.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | No | YES | GULL WING | PSMN6R1 | 4 | 1 | Single | 1 | 7.5 ns | 11ns | 7.2 ns | 9.8 ns | 66A | 20V | 30V | SILICON | DRAIN | SWITCHING | 47W Tc | MO-235 | 263A | 0.00835Ohm | N-Channel | 817pF @ 15V | 6m Ω @ 15A, 10V | 2.2V @ 1mA | 66A Tc | 13.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9M10-30EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk9m1030ex-datasheets-2365.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AEC-Q101; IEC-60134 | SINGLE | GULL WING | 8 | 1 | R-PSSO-G4 | 54A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 55W Tc | 216A | 0.01Ohm | 28.3 mJ | N-Channel | 1249pF @ 25V | 7.8m Ω @ 15A, 10V | 2.1V @ 1mA | 54A Tc | 12.2nC @ 5V | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP3098LDM-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/diodesincorporated-dmp3098ldm7-datasheets-2415.pdf | SOT-23-6 | 3mm | 1.1mm | 1.6mm | Lead Free | 6 | 7 Weeks | No SVHC | 65mOhm | 6 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | 40 | 1.25W | 1 | Other Transistors | 6 ns | 5ns | 5 ns | 17.6 ns | 4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 1.25W Ta | 4A | 30V | P-Channel | 336pF @ 25V | 65m Ω @ 4A, 10V | 2.1V @ 250μA | 4A Ta | 7.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| RUF025N02TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/rohm-ruf025n02tl-datasheets-7027.pdf | 3-SMD, Flat Lead | 2.1mm | 820μm | 1.8mm | 3 | 16 Weeks | No SVHC | 3 | yes | EAR99 | No | e2 | TIN COPPER | DUAL | 260 | 3 | Single | 10 | 800mW | 1 | FET General Purpose Power | 7 ns | 15ns | 15 ns | 35 ns | 2.5A | 10V | SILICON | SWITCHING | 300mV | 320mW Ta | 0.068Ohm | 20V | N-Channel | 370pF @ 10V | 300 mV | 54m Ω @ 2.5A, 4.5V | 1.3V @ 1mA | 2.5A Ta | 5nC @ 4.5V | 1.5V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||
| SQ2361ES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq2361est1ge3-datasheets-2383.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 12 Weeks | EAR99 | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 1 | 10 | 2W | 1 | 175°C | R-PDSO-G3 | 8 ns | 22 ns | -2.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 2W Tc | 42 pF | -60V | P-Channel | 550pF @ 30V | 177m Ω @ 2.4A, 10V | 2.5V @ 250μA | 2.8A Tc | 12nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| RZL035P01TR | ROHM Semiconductor | $0.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rzl035p01tr-datasheets-2230.pdf | 6-SMD, Flat Leads | Lead Free | 6 | 36MOhm | 6 | yes | EAR99 | No | DUAL | 260 | 6 | 10 | 1W | 1 | Other Transistors | 10 ns | 50ns | 180 ns | 350 ns | 3.5A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 1W Ta | -12V | P-Channel | 1940pF @ 6V | 36m Ω @ 3.5A, 4.5V | 1V @ 1mA | 3.5A Ta | 1.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN6R0-30YL,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn6r030yl115-datasheets-2492.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 4 | EAR99 | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 260 | 4 | 30 | 55W | 1 | 25 ns | 43ns | 11 ns | 31 ns | 79A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55W Tc | MO-235 | 73A | 292A | 0.0097Ohm | 26 mJ | 30V | N-Channel | 1425pF @ 12V | 6m Ω @ 15A, 10V | 2.15V @ 1mA | 79A Tc | 24nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| AON7405 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | 8-PowerWDFN | 16 Weeks | 8 | Other Transistors | 50A | Single | 30V | 6.25W Ta 83W Tc | P-Channel | 2940pF @ 15V | 6.2m Ω @ 20A, 10V | 2.8V @ 250μA | 25A Ta 50A Tc | 51nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTHS4166NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-nths4166nt1g-datasheets-2518.pdf | 8-SMD, Flat Lead | 3.1mm | 1.1mm | 1.7mm | Lead Free | 8 | 2 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | e3 | Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 8 | Single | NOT SPECIFIED | 1.5W | 1 | FET General Purpose Power | Not Qualified | 12 ns | 11ns | 11 ns | 20 ns | 6.6A | 20V | SILICON | SWITCHING | 800mW Ta | 4.9A | 0.022Ohm | 30V | N-Channel | 900pF @ 15V | 22m Ω @ 4.9A, 10V | 2.3V @ 250μA | 4.9A Ta | 18nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| 2SK327700L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-2sk327700l-datasheets-2563.pdf | 200V | 2.5A | U-G1 | Lead Free | U-G1 | 170pF | 2.5A | 200V | 1W Ta 10W Tc | N-Channel | 170pF @ 20V | 1.7Ohm @ 1.25A, 10V | 4V @ 1mA | 2.5A Tc | 1.7 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD5N40 | Alpha & Omega Semiconductor Inc. | $0.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 3 | 4.2A | 400V | 78W Tc | N-Channel | 400pF @ 25V | 1.6 Ω @ 1A, 10V | 4.5V @ 250μA | 4.2A Tc | 8.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD4965NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-ntd4965nt4g-datasheets-2579.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 5 Weeks | 4 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 4 | Single | 38.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 12.1 ns | 34.2ns | 14.2 ns | 18.9 ns | 17.8A | 20V | SILICON | DRAIN | SWITCHING | 1.39W Ta | 68A | 60 mJ | 30V | N-Channel | 1710pF @ 15V | 4.7m Ω @ 30A, 10V | 2.5V @ 250μA | 13A Ta 68A Tc | 17.2nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| AO4411 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | 8 | EAR99 | DUAL | GULL WING | 8 | 1 | Not Qualified | 8A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 3.1W Ta | 8A | 0.032Ohm | 135 pF | P-Channel | 760pF @ 15V | 32m Ω @ 8A, 10V | 2.4V @ 250μA | 8A Ta | 16nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSL020P03FRATR | ROHM Semiconductor | $0.89 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | 6-SMD, Flat Leads | 6 | 16 Weeks | Unknown | 6 | EAR99 | not_compliant | YES | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1 | -2A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | -2.5V | 1W Ta | 2A | 0.12Ohm | P-Channel | 350pF @ 10V | 120m Ω @ 2A, 10V | 2.5V @ 1mA | 2A Ta | 3.9nC @ 5V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CEDM7004 TR PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cedm7004trpbfree-datasheets-1925.pdf | SC-101, SOT-883 | 24 Weeks | YES | FET General Purpose Power | Single | 30V | 100mW Ta | 1.78A | N-Channel | 43pF @ 25V | 460m Ω @ 200mA, 4.5V | 1V @ 250μA | 1.78A Ta | 0.79nC @ 4.5V | 1.8V 4.5V | 8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPN11003NL,LQ | Toshiba Semiconductor and Storage | $0.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 8 | No | 1 | 8-TSON Advance (3.3x3.3) | 660pF | 7.5 ns | 2.1ns | 1.9 ns | 14 ns | 11A | 20V | 30V | 700mW Ta 19W Tc | 12.6mOhm | 30V | N-Channel | 660pF @ 15V | 11mOhm @ 5.5A, 10V | 2.3V @ 100μA | 11A Tc | 7.5nC @ 10V | 11 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS0312S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms0312s-datasheets-2165.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Lead Free | 5 | 26 Weeks | 74mg | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | DUAL | FLAT | Single | 2.5W | 1 | FET General Purpose Power | R-PDSO-F5 | 12 ns | 5ns | 4 ns | 28 ns | 19A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 46W Tc | MO-240AA | 90A | 0.0044Ohm | 60 mJ | 30V | N-Channel | 2820pF @ 15V | 4.9m Ω @ 18A, 10V | 3V @ 1mA | 19A Ta 42A Tc | 46nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FQT2P25TF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqt2p25tf-datasheets-2218.pdf | -250V | -550mA | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | Lead Free | 4 | 10 Weeks | 188mg | 4 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 2.5W | 1 | Other Transistors | 8.5 ns | 40ns | 25 ns | 12 ns | 550mA | 30V | SILICON | DRAIN | SWITCHING | 250V | 2.5W Tc | 0.55A | 2.2A | 4Ohm | -250V | P-Channel | 250pF @ 25V | 4 Ω @ 275mA, 10V | 5V @ 250μA | 550mA Tc | 8.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| NVMFS5832NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-nvmfs5832nlt1g-datasheets-2234.pdf | Lead Free | 5 | 38 Weeks | 5 | ACTIVE, NOT REC (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | Halogen Free | YES | 3.7W | DUAL | FLAT | NOT SPECIFIED | 5 | Single | NOT SPECIFIED | 3.7W | 1 | FET General Purpose Power | 2.7nF | 13 ns | 24ns | 8 ns | 27 ns | 21A | 20V | DRAIN | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 0.0072Ohm | 4.2 mΩ |
