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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation Ambient-Max | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| AO4482L | Alpha & Omega Semiconductor Inc. | $0.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | 8-SOIC (0.154, 3.90mm Width) | 100V | 3.1W Ta | N-Channel | 2000pF @ 50V | 37m Ω @ 6A, 10V | 2.7V @ 250μA | 6A Ta | 44nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO3413L_101 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-236-3, SC-59, SOT-23-3 | 20V | 1.4W Ta | P-Channel | 540pF @ 10V | 97m Ω @ 3A, 4.5V | 1V @ 250μA | 3A Ta | 6.1nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO3418L | Alpha & Omega Semiconductor Inc. | $0.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-236-3, SC-59, SOT-23-3 | 30V | 1.4W Ta | N-Channel | 270pF @ 15V | 60m Ω @ 3.8A, 10V | 1.8V @ 250μA | 3.8A Ta | 3.6nC @ 4.5V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVD4806NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/onsemiconductor-ntd4806n35g-datasheets-6879.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 4 Weeks | 4 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | FET General Purpose Power | 79A | 20V | 30V | 1.4W Ta 68W Tc | N-Channel | 2142pF @ 12V | 6m Ω @ 30A, 10V | 2.5V @ 250μA | 11.3A Ta 79A Tc | 23nC @ 4.5V | 4.5V 11.5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AO4425L | Alpha & Omega Semiconductor Inc. | $1.00 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | 8-SOIC (0.154, 3.90mm Width) | 38V | 3.1W Ta | P-Channel | 3800pF @ 20V | 10m Ω @ 14A, 20V | 3.5V @ 250μA | 14A Ta | 63nC @ 10V | 10V 20V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM1630 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB437EDKT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sib437edktt1ge3-datasheets-4889.pdf | PowerPAK® TSC-75-6 | 3 | 15 Weeks | 95.991485mg | Unknown | 6 | EAR99 | No | DUAL | 6 | 1 | Single | 2.4W | 1 | Other Transistors | S-PDSO-N3 | 90 ns | 170ns | 630 ns | 690 ns | 7.5A | 5V | SILICON | DRAIN | SWITCHING | 8V | -350mV | 2.4W Ta 13W Tc | 9A | 25A | 0.034Ohm | -8V | P-Channel | 34m Ω @ 3A, 4.5V | 700mV @ 250μA | 9A Tc | 16nC @ 4.5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||
| IXTM15N60 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2 | NO | BOTTOM | PIN/PEG | 150°C | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 250W | 600V | METAL-OXIDE SEMICONDUCTOR | TO-204AE | 15A | 0.5Ohm | 300W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFM67N10 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/ixys-ixfh75n10-datasheets-2049.pdf | TO-204AE | 2 | yes | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 300W Tc | 67A | 268A | 0.025Ohm | N-Channel | 4500pF @ 25V | 25m Ω @ 33.5A, 10V | 4V @ 4mA | 67A Tc | 260nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXTM67N10 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixth67n10-datasheets-1685.pdf | TO-204AE | 2 | 3 | yes | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 300W Tc | 67A | 268A | 0.025Ohm | N-Channel | 4500pF @ 25V | 25m Ω @ 33.5A, 10V | 4V @ 4mA | 67A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| AO4406AL | Alpha & Omega Semiconductor Inc. | $0.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2012 | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | 30V | 3.1W Tc | N-Channel | 910pF @ 15V | 11.5mOhm @ 12A, 10V | 2.5V @ 250μA | 13A Tc | 17nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFM1627 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO3401AL_101 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-236-3, SC-59, SOT-23-3 | 30V | 1.4W Ta | P-Channel | 1200pF @ 15V | 44m Ω @ 4.3A, 10V | 1.3V @ 250μA | 4.3A Ta | 12.2nC @ 4.5V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO3416L_103 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-236-3, SC-59, SOT-23-3 | 20V | 1.4W Ta | N-Channel | 1160pF @ 10V | 22m Ω @ 6.5A, 4.5V | 1V @ 250μA | 6.5A Ta | 16nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO3422L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-236-3, SC-59, SOT-23-3 | compliant | 55V | 1.25W Ta | N-Channel | 300pF @ 25V | 160m Ω @ 2.1A, 4.5V | 2V @ 250μA | 2.1A Ta | 3.3nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO3419L | Alpha & Omega Semiconductor Inc. | $0.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | TO-236-3, SC-59, SOT-23-3 | 20V | 1.4W Ta | P-Channel | 620pF @ 10V | 75m Ω @ 3.5A, 10V | 1.4V @ 250μA | 3.5A Ta | 6.6nC @ 4.5V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO3406L_106 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-236-3, SC-59, SOT-23-3 | 30V | 1.4W Ta | N-Channel | 375pF @ 15V | 65m Ω @ 3.6A, 10V | 3V @ 250μA | 3.6A Ta | 8.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| T-TD1R4N60P 11 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVD5890NLT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-nvd5890nlt4g-datasheets-4641.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 3 | LIFETIME (Last Updated: 2 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 4W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 38 ns | 123A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | 4W Ta 107W Tc | 400A | 0.0055Ohm | N-Channel | 4760pF @ 25V | 3.7m Ω @ 50A, 10V | 2.5V @ 250μA | 24A Ta 123A Tc | 42nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| AO3406L_107 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-236-3, SC-59, SOT-23-3 | 30V | 1.4W Ta | N-Channel | 375pF @ 15V | 65m Ω @ 3.6A, 10V | 3V @ 250μA | 3.6A Ta | 8.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVD5490NLT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-nvd5490nlt4g-datasheets-4624.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 4 | LIFETIME (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 4 | 1 | Single | 3.4W | 1 | FET General Purpose Power | R-PSSO-G2 | 9.4 ns | 57ns | 35 ns | 24 ns | 17A | 20V | SILICON | DRAIN | 3.4W Ta 49W Tc | 5A | 0.085Ohm | 60V | N-Channel | 365pF @ 25V | 64m Ω @ 9A, 10V | 2.5V @ 250μA | 5A Ta 17A Tc | 14nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| AO3418L_101 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-236-3, SC-59, SOT-23-3 | 30V | 1.4W Ta | N-Channel | 270pF @ 15V | 60m Ω @ 3.8A, 10V | 1.8V @ 250μA | 3.8A Ta | 3.6nC @ 4.5V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM1316 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTM40N30 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtm40n30-datasheets-4851.pdf | TO-204AE | 2 | yes | EAR99 | NO | BOTTOM | PIN/PEG | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 300V | 300W Tc | 40A | 160A | 0.088Ohm | N-Channel | 4600pF @ 25V | 88m Ω @ 20A, 10V | 4V @ 250μA | 40A Tc | 220nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| AO3422L_104 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-236-3, SC-59, SOT-23-3 | 55V | 1.25W Ta | N-Channel | 300pF @ 25V | 160m Ω @ 2.1A, 4.5V | 2V @ 250μA | 2.1A Ta | 3.3nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANSF2N7383 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Not Applicable | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO3409L | Alpha & Omega Semiconductor Inc. | $0.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-236-3, SC-59, SOT-23-3 | compliant | 30V | 1.4W Ta | P-Channel | 370pF @ 15V | 130m Ω @ 2.6A, 10V | 3V @ 250μA | 2.6A Ta | 9nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO4407AL_102 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-SOIC (0.154, 3.90mm Width) | 30V | 3.1W Ta | P-Channel | 2600pF @ 15V | 11m Ω @ 12A, 20V | 3V @ 250μA | 12A Ta | 39nC @ 10V | 6V 20V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| JANSR2N7269U | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Military, MIL-PRF-19500/603 | Surface Mount | -55°C~150°C | Tray | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-jansr2n7269-datasheets-4478.pdf | 3-SMD, No Lead | 3 | EAR99 | compliant | MIL-19500/603 | YES | DUAL | 3 | 1 | Qualified | R-PDSO-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 200V | 200V | 150W Tc | TO-267AB | 26A | 0.2Ohm | N-Channel | 110m Ω @ 26A, 12V | 4V @ 1mA | 26A Tc | 170nC @ 12V | 12V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AO4466L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-SOIC (0.154, 3.90mm Width) | compliant | 30V | 3.1W Ta | N-Channel | 820pF @ 15V | 23m Ω @ 9.4A, 10V | 3V @ 250μA | 9.4A Ta | 17nC @ 10V | 4.5V 10V | ±20V |
