JANSR2N7269U

MOSFET (Metal Oxide) N-Channel Tray 110m Ω @ 26A, 12V ±20V 170nC @ 12V 200V 3-SMD, No Lead


  • Manufacturer: Microsemi Corporation
  • NO: 523-JANSR2N7269U
  • Package: 3-SMD, No Lead
  • Datasheet: pdf
  • Stock: 11546
  • Description: MOSFET (Metal Oxide) N-Channel Tray 110m Ω @ 26A, 12V ±20V 170nC @ 12V 200V 3-SMD, No Lead (Kg)

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SPECIFICATIONS

Parameters
Rds On (Max) @ Id, Vgs 110m Ω @ 26A, 12V
Vgs(th) (Max) @ Id 4V @ 1mA
Current - Continuous Drain (Id) @ 25°C 26A Tc
Gate Charge (Qg) (Max) @ Vgs 170nC @ 12V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 12V
Vgs (Max) ±20V
JEDEC-95 Code TO-267AB
Drain Current-Max (Abs) (ID) 26A
Drain-source On Resistance-Max 0.2Ohm
DS Breakdown Voltage-Min 200V
Mounting Type Surface Mount
Package / Case 3-SMD, No Lead
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C
Packaging Tray
Series Military, MIL-PRF-19500/603
Published 1997
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Reach Compliance Code compliant
Pin Count 3
Reference Standard MIL-19500/603
JESD-30 Code R-PDSO-N3
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 150W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel

In Stock

Please send RFQ , we will respond immediately.