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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF100P219XKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/infineontechnologies-irf100p219xkma1-datasheets-2149.pdf | TO-247-3 | 3 | 18 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 341W Tc | TO-247AC | 195A | 780A | 0.0017Ohm | 464 mJ | N-Channel | 12020pF @ 50V | 1.7m Ω @ 100A, 10V | 3.8V @ 278μA | 270nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB7430PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfb7430pbf-datasheets-2156.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | No | Single | 375W | 1 | FET General Purpose Power | 32 ns | 105ns | 100 ns | 160 ns | 195A | 20V | SILICON | DRAIN | SWITCHING | 2.2V | 375W Tc | TO-220AB | 52 ns | 760 mJ | 40V | N-Channel | 14240pF @ 25V | 1.3m Ω @ 100A, 10V | 3.9V @ 250μA | 195A Tc | 460nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IXFB110N60P3 | IXYS | $21.61 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfb110n60p3-datasheets-2165.pdf | TO-264-3, TO-264AA | 20.29mm | 26.59mm | 5.31mm | Lead Free | 3 | 26 Weeks | No SVHC | 264 | EAR99 | AVALANCHE RATED | 3 | Single | 1.89kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 63 ns | 19ns | 11 ns | 77 ns | 110A | 30V | SILICON | DRAIN | SWITCHING | 5V | 1890W Tc | 275A | 0.056Ohm | 3000 mJ | 600V | N-Channel | 18000pF @ 25V | 56m Ω @ 55A, 10V | 5V @ 8mA | 110A Tc | 245nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| STP10N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw10n95k5-datasheets-4176.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 17 Weeks | 329.988449mg | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP10 | 1 | Single | NOT SPECIFIED | 130W | 1 | 22 ns | 14ns | 15 ns | 51 ns | 8A | 30V | SILICON | DRAIN | SWITCHING | 130W Tc | TO-220AB | 8A | 0.8Ohm | 950V | N-Channel | 630pF @ 100V | 800m Ω @ 4A, 10V | 5V @ 100μA | 8A Tc | 22nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| STP8N90K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/stmicroelectronics-stp8n90k5-datasheets-2093.pdf | TO-220-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STP8N | 900V | 130W Tc | 600mOhm | N-Channel | 5V @ 100μA | 8A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFI9Z34GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irfi9z34gpbf-datasheets-2096.pdf | -60V | -12A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 140mOhm | 3 | No | 1 | Single | 42W | 1 | TO-220-3 | 1.1nF | 18 ns | 120ns | 58 ns | 20 ns | -12A | 20V | 60V | -4V | 42W Tc | 140mOhm | -60V | P-Channel | 1100pF @ 25V | -4 V | 140mOhm @ 7.2A, 10V | 4V @ 250μA | 12A Tc | 34nC @ 10V | 140 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| PSMN1R1-30PL,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-psmn1r130pl127-datasheets-2101.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 3 | No | e3 | Tin (Sn) | NO | SINGLE | 3 | 338W | 1 | 95 ns | 213ns | 115 ns | 199 ns | 120A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 338W Tc | TO-220AB | 30V | N-Channel | 14850pF @ 15V | 1.3m Ω @ 25A, 10V | 2.2V @ 1mA | 120A Tc | 243nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| APT42F50B | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt42f50b-datasheets-2108.pdf | 500V | 42A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 22 Weeks | 38.000013g | IN PRODUCTION (Last Updated: 1 month ago) | yes | AVALANCHE RATED, HIGH RELIABILITY | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 625W | 1 | R-PSFM-T3 | 29 ns | 35ns | 26 ns | 80 ns | 42A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 625W Tc | 930 mJ | N-Channel | 6810pF @ 25V | 130m Ω @ 21A, 10V | 5V @ 1mA | 42A Tc | 170nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| TK20A60U(Q,M) | Toshiba Semiconductor and Storage | $25.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 52 Weeks | 3 | No | Single | 45W | 1 | TO-220SIS | 1.47nF | 40ns | 12 ns | 20A | 30V | 600V | 45W Tc | 190mOhm | 600V | N-Channel | 1470pF @ 10V | 190mOhm @ 10A, 10V | 5V @ 1mA | 20A Ta | 27nC @ 10V | 190 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFT220N20X3HV | IXYS | $17.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixft220n20x3hv-datasheets-2115.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 19 Weeks | 200V | 960W Tc | N-Channel | 13600pF @ 25V | 6.2m Ω @ 110A, 10V | 4.5V @ 4mA | 220A Tc | 204nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBA1405PPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irfba1405ppbf-datasheets-2050.pdf | 55V | 174A | TO-273AA | 10.9982mm | 15mm | 5mm | Lead Free | 3 | 12 Weeks | 5MOhm | 3 | EAR99 | HIGH RELIABILITY | No | Single | 330W | 1 | FET General Purpose Power | 13 ns | 190ns | 110 ns | 130 ns | 174A | 20V | SILICON | DRAIN | SWITCHING | 330W Tc | 680A | 560 mJ | 55V | N-Channel | 5480pF @ 25V | 5m Ω @ 101A, 10V | 4V @ 250μA | 174A Tc | 260nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IXTH10P60 | IXYS | $24.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/ixys-ixth10p60-datasheets-2057.pdf | -600V | -10A | TO-247-3 | Lead Free | 3 | 5 Weeks | 1Ohm | 3 | no | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Other Transistors | Not Qualified | 27ns | 35 ns | 85 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 600V | 300W Tc | 40A | -600V | P-Channel | 4700pF @ 25V | 1 Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IXTH6N50D2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/ixys-ixta6n50d2-datasheets-1686.pdf | TO-247-3 | 3 | 24 Weeks | yes | UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 500V | 300W Tc | 0.5Ohm | N-Channel | 2800pF @ 25V | 500m Ω @ 3A, 0V | 6A Tc | 96nC @ 5V | Depletion Mode | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB31N20DPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irfb31n20dpbf-datasheets-2062.pdf | 200V | 31A | TO-220-3 | 10.5156mm | 8.763mm | 4.69mm | Contains Lead, Lead Free | 3 | 14 Weeks | No SVHC | 82mOhm | 3 | EAR99 | Tin | No | e3 | 250 | Single | 30 | 200W | 1 | FET General Purpose Power | 16 ns | 38ns | 10 ns | 26 ns | 31A | 30V | 200V | SILICON | DRAIN | SWITCHING | 5.5V | 3.1W Ta 200W Tc | TO-220AB | 300 ns | 420 mJ | 200V | N-Channel | 2370pF @ 25V | 5.5 V | 82m Ω @ 18A, 10V | 5.5V @ 250μA | 31A Tc | 107nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| IRFB4310ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs4310ztrlpbf-datasheets-2802.pdf | TO-220-3 | 10.668mm | 9.017mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 6MOhm | 3 | EAR99 | No | Single | 250W | 1 | FET General Purpose Power | 20 ns | 60ns | 57 ns | 55 ns | 140A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 250W Tc | TO-220AB | 40 ns | 560A | 100V | N-Channel | 6860pF @ 50V | 4 V | 6m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STP10NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu10nm60n-datasheets-5644.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 550mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP10 | 3 | Single | 70W | 1 | FET General Purpose Power | 10 ns | 12ns | 15 ns | 32 ns | 10A | 25V | SILICON | SWITCHING | 3V | 70W Tc | TO-220AB | 8A | 200 mJ | 600V | N-Channel | 540pF @ 50V | 550m Ω @ 4A, 10V | 4V @ 250μA | 10A Tc | 19nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| IXFX64N60P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfx64n60p3-datasheets-2082.pdf | TO-247-3 | 16.13mm | 21.34mm | 5.21mm | 3 | 30 Weeks | 247 | AVALANCHE RATED | 3 | Single | 1.13kW | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 43 ns | 17ns | 11 ns | 66 ns | 64A | 30V | SILICON | DRAIN | SWITCHING | 1130W Tc | 160A | 0.095Ohm | 1500 mJ | 600V | N-Channel | 9900pF @ 25V | 95m Ω @ 32A, 10V | 5V @ 4mA | 64A Tc | 145nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| SQP90142E_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | /files/vishaysiliconix-sqp90142ege3-datasheets-2084.pdf | TO-220-3 | 19.31mm | 12 Weeks | 1 | 250W | 175°C | TO-220AB | 17 ns | 39 ns | 78.5A | 20V | 200V | 250W Tc | 12.7mOhm | 200V | N-Channel | 4200pF @ 25V | 15.3mOhm @ 20A, 10V | 3.5V @ 250μA | 78.5A Tc | 85nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPW17N80C3FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-spw17n80c3fksa1-datasheets-2086.pdf | TO-247-3 | 3 | 18 Weeks | yes | AVALANCHE RATED, HIGH VOLTAGE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 227W Tc | 17A | 51A | 0.29Ohm | 670 mJ | N-Channel | 2320pF @ 25V | 290m Ω @ 11A, 10V | 3.9V @ 1mA | 17A Tc | 177nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH14N100Q2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfh14n100q2-datasheets-2029.pdf | TO-247-3 | 16.26mm | 21.46mm | 5.3mm | Lead Free | 3 | 8 Weeks | 6g | No SVHC | 900mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 500W | 1 | 12 ns | 10ns | 12 ns | 28 ns | 14A | 30V | 1kV | SILICON | DRAIN | SWITCHING | 1000V | 5V | 500W Tc | TO-247AD | 300 ns | 56A | 2500 mJ | 1kV | N-Channel | 2800pF @ 25V | 5 V | 950m Ω @ 7A, 10V | 5.5V @ 4mA | 14A Tc | 83nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| 2SK3703-1E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/onsemiconductor-2sk37031e-datasheets-2031.pdf | TO-220-3 Full Pack | Lead Free | 10 Weeks | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NO | 3 | Single | 25W | FET General Purpose Powers | 16.5 ns | 110ns | 144 ns | 166 ns | 30A | 20V | 2W Ta 25W Tc | 60V | N-Channel | 1780pF @ 20V | 26m Ω @ 15A, 10V | 30A Ta | 40nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK040N65Z,S1F | Toshiba Semiconductor and Storage | $9.80 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | TO-247-3 | 16 Weeks | 650V | 360W Tc | N-Channel | 6250pF @ 300V | 40m Ω @ 28.5A, 10V | 4V @ 2.85mA | 57A Ta | 105nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF18N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw18n65m5-datasheets-4903.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 17 Weeks | 220MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STF18 | Single | 25W | 1 | 36 ns | 36 ns | 15A | 25V | SILICON | ISOLATED | SWITCHING | 25W Tc | TO-220AB | 60A | 650V | N-Channel | 1240pF @ 100V | 220m Ω @ 7.5A, 10V | 5V @ 250μA | 15A Tc | 31nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRL640PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irl640pbf-datasheets-2042.pdf | 200V | 17A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 180mOhm | 3 | No | 17A | 200V | 1 | Single | 125W | 1 | TO-220AB | 1.8nF | 8 ns | 83ns | 52 ns | 44 ns | 17A | 10V | 200V | 2V | 125W Tc | 470 ns | 180mOhm | 200V | N-Channel | 1800pF @ 25V | 180mOhm @ 10A, 5V | 2V @ 250μA | 17A Tc | 66nC @ 5V | 180 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||
| IRF9Z30PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-irf9z30pbf-datasheets-1976.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 8 Weeks | 6.000006g | Unknown | 140mOhm | 3 | yes | EAR99 | No | e3 | MATTE TIN | 3 | 1 | Single | 74W | 1 | 12 ns | 110ns | 64 ns | 21 ns | 18A | 20V | SILICON | DRAIN | SWITCHING | 50V | -4V | 74W Tc | TO-220AB | 60A | -50V | P-Channel | 900pF @ 25V | 140m Ω @ 9.3A, 10V | 4V @ 250μA | 18A Tc | 39nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFP9140PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfp9140pbf-datasheets-1983.pdf | -100V | -21A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 200mOhm | 3 | No | 1 | Single | 180W | 1 | TO-247-3 | 1.4nF | 16 ns | 73ns | 57 ns | 34 ns | -21A | 20V | 100V | -4V | 180W Tc | 260 ns | 200mOhm | -100V | P-Channel | 1400pF @ 25V | -4 V | 200mOhm @ 13A, 10V | 4V @ 250μA | 21A Tc | 61nC @ 10V | 200 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STP6NK90ZFP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb6nk90zt4-datasheets-1507.pdf | TO-220-3 Full Pack | 10.4mm | 9.3mm | 4.6mm | 3 | 12 Weeks | 4.535924g | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED, HIGH VOLTAGE | No | e3 | Matte Tin (Sn) - annealed | STP6N | 3 | Single | 30W | 1 | FET General Purpose Power | 17 ns | 45ns | 20 ns | 20 ns | 5.8A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 30W Tc | TO-220AB | 2Ohm | 900V | N-Channel | 1350pF @ 25V | 2 Ω @ 2.9A, 10V | 4.5V @ 100μA | 5.8A Tc | 60.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IRFD9020PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-irfd9020pbf-datasheets-1993.pdf | 4-DIP (0.300, 7.62mm) | Lead Free | 4 | 8 Weeks | Unknown | 280mOhm | 4 | yes | EAR99 | AVALANCHE RATED | No | DUAL | 4 | Single | 1.3W | 1 | Other Transistors | 13 ns | 68ns | 29 ns | 15 ns | 1.6A | 20V | SILICON | SWITCHING | -4V | 1.3W Ta | 60V | P-Channel | 570pF @ 25V | 280m Ω @ 960mA, 10V | 4V @ 1μA | 1.6A Ta | 19nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| STW12NK95Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw12nk95z-datasheets-1996.pdf | 950V | 10A | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | No SVHC | 900mOhm | 3 | NRND (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STW12N | 3 | Single | 230W | 1 | FET General Purpose Power | 31 ns | 20ns | 55 ns | 88 ns | 10A | 30V | SILICON | SWITCHING | 3.75V | 230W Tc | TO-247AC | 40A | 500 mJ | 950V | N-Channel | 3500pF @ 25V | 900m Ω @ 5A, 10V | 4.5V @ 100μA | 10A Tc | 113nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRFP4332PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -40°C~175°C TJ | Bulk | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfp4332pbf-datasheets-2000.pdf | 250V | 57A | TO-247-3 | 15.875mm | 20.3mm | 5.3mm | Lead Free | 3 | 12 Weeks | No SVHC | 33MOhm | 3 | EAR99 | ULTRA LOW ON-RESISTANCE | Tin | No | Single | 120mW | 1 | FET General Purpose Power | 57A | 30V | 250V | SILICON | DRAIN | SWITCHING | 5V | 360W Tc | TO-247AC | 290 ns | 250V | N-Channel | 5860pF @ 25V | 5 V | 33m Ω @ 35A, 10V | 5V @ 250μA | 57A Tc | 150nC @ 10V | 10V | ±30V |
