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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STP20N60M2-EP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2-EP | Through Hole | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | STP20N | 600V | 110W Tc | N-Channel | 13A Tc | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD100N10LF7AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F7 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std100n10lf7ag-datasheets-1284.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | ACTIVE (Last Updated: 8 months ago) | YES | SINGLE | GULL WING | NOT SPECIFIED | STD10 | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 125W Tc | 80A | 320A | 0.011Ohm | 200 mJ | N-Channel | 4000pF @ 25V | 9m Ω @ 40A, 10V | 2.5V @ 250μA | 80A Tc | 73nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STH180N4F6-2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F6 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20 Weeks | ACTIVE (Last Updated: 2 weeks ago) | NOT SPECIFIED | STH180 | NOT SPECIFIED | 40V | 190W Tc | N-Channel | 7735pF @ 25V | 2.4m Ω @ 60A, 10V | 4.5V @ 250μA | 120A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STFH10N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfh10n60m6-datasheets-1293.pdf | TO-220-3 Full Pack | 16 Weeks | compliant | 600V | 20W Tc | N-Channel | 338pF @ 100V | 600m Ω @ 3.2A, 10V | 4.75V @ 250μA | 6.4A Tc | 8.8nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP40NF12 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp40nf12-datasheets-1294.pdf | 120V | 40A | TO-220-3 | Lead Free | 3 | NRND (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | STP40N | 3 | Single | 150W | 1 | FET General Purpose Power | R-PSFM-T3 | 28 ns | 63ns | 28 ns | 84 ns | 40A | 20V | SILICON | SWITCHING | 150W Tc | TO-220AB | 0.032Ohm | 120V | N-Channel | 1880pF @ 25V | 32m Ω @ 20A, 10V | 4V @ 250μA | 40A Tc | 80nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| NTMJS0D8N04CLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmjs0d8n04cltwg-datasheets-1219.pdf | SOT-1205, 8-LFPAK56 | 16 Weeks | yes | 40V | 4.2W Ta 180W Tc | N-Channel | 9600pF @ 25V | 720μ Ω @ 50A, 10V | 2V @ 250μA | 56A Ta 368A Tc | 162nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL12HN65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 8-PowerVDFN | 14 Weeks | OBSOLETE (Last Updated: 8 months ago) | NOT SPECIFIED | STL12 | NOT SPECIFIED | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STI20N60M2-EP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2-EP | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | 14 Weeks | OBSOLETE (Last Updated: 7 months ago) | NOT SPECIFIED | STI20N | NOT SPECIFIED | 600V | 110W Tc | N-Channel | 787pF @ 100V | 278m Ω @ 6.5A, 10V | 4.75V @ 250μA | 13A Tc | 21.7nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ014NE2LS5IFATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsz014ne2ls5ifatma1-datasheets-0951.pdf | 8-PowerTDFN | Contains Lead | 3 | 18 Weeks | 8 | yes | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N3 | 3ns | 40A | 16V | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 69W Tc | 31A | 160A | 0.0021Ohm | N-Channel | 2300pF @ 12V | 1.45m Ω @ 20A, 10V | 2V @ 250μA | 31A Ta 40A Tc | 33nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| NTMFS5C450NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/onsemiconductor-ntmfs5c450nt1g-datasheets-0419.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 16 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.6W Ta 68W Tc | N-Channel | 1600pF @ 25V | 3.3m Ω @ 50A, 10V | 3.5V @ 65μA | 24A Ta 102A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STH130N8F7-2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F7 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | STH130 | 80V | 205W Tc | N-Channel | 4500pF @ 25V | 5m Ω @ 55A, 10V | 4.5V @ 250μA | 110A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF4N62K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stfi4n62k3-datasheets-4844.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 2Ohm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF4N | 3 | Single | 25W | 1 | FET General Purpose Power | 10 ns | 9ns | 19 ns | 29 ns | 3.8A | 30V | SILICON | ISOLATED | SWITCHING | 3.75V | 25W Tc | TO-220AB | 15.2A | 620V | N-Channel | 550pF @ 50V | 2 Ω @ 1.9A, 10V | 4.5V @ 50μA | 3.8A Tc | 22nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| STP90N55F4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp90n55f4-datasheets-2204.pdf | TO-220-3 | Lead Free | 3 | 42 Weeks | 8MOhm | EAR99 | ULTRA LOW-ON RESISTANCE | Tin | No | e3 | STP90N | 3 | Single | 150W | 1 | FET General Purpose Power | R-PSFM-T3 | 20 ns | 60ns | 30 ns | 55 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 150W Tc | TO-220AB | 360A | 290 mJ | 55V | N-Channel | 4800pF @ 25V | 8m Ω @ 45A, 10V | 4V @ 250μA | 90A Tc | 90nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STP6N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std6n80k5-datasheets-3682.pdf | TO-220-3 | Lead Free | 3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | SINGLE | STP6N | 1 | R-PSFM-T3 | 4.5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 85W Tc | TO-220AB | 18A | 85 mJ | N-Channel | 255pF @ 100V | 1.6 Ω @ 2A, 10V | 5V @ 100μA | 4.5A Tc | 7.5nC @ 10V | 10V | 30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPAN70R600P7SXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -40°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipan70r600p7sxksa1-datasheets-1259.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 700V | 700V | 24.9W Tc | TO-220AB | 20.5A | 0.6Ohm | N-Channel | 364pF @ 400V | 600m Ω @ 1.8A, 10V | 3.5V @ 90μA | 8.5A Tc | 10.5nC @ 10V | 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SIR104ADP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir104adpt1re3-datasheets-1183.pdf | PowerPAK® SO-8 | PowerPAK® SO-8 | 100V | 5.4W Ta 100W Tc | N-Channel | 3250pF @ 50V | 6.1mOhm @ 15A, 10V | 4V @ 250μA | 18.8A Ta 81A Tc | 70nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6007END3TL1 | ROHM Semiconductor | $2.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6007end3tl1-datasheets-1165.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 8 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 78W Tc | 7A | 14A | 0.62Ohm | 133 mJ | N-Channel | 390pF @ 25V | 620m Ω @ 2.4A, 10V | 4V @ 1mA | 7A Tc | 20nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TK34E10N1,S1X | Toshiba Semiconductor and Storage | $1.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 | 12 Weeks | 75A | 100V | 103W Tc | N-Channel | 2600pF @ 50V | 9.5m Ω @ 17A, 10V | 4V @ 500μA | 75A Tc | 38nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA50R500CEXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa50r500cexksa2-datasheets-1197.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 6 ns | 5ns | 12 ns | 30 ns | 5.4A | 20V | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 28W Tc | TO-220AB | 24A | 0.5Ohm | 129 mJ | N-Channel | 433pF @ 100V | 500m Ω @ 2.3A, 13V | 3.5V @ 200μA | 5.4A Tc | 18.7nC @ 10V | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STU5N95K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf5n95k5-datasheets-2982.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | NO | SINGLE | NOT SPECIFIED | STU5N | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 950V | 950V | 70W Tc | 3.5A | 14A | 70 mJ | N-Channel | 220pF @ 100V | 2.5 Ω @ 1.5A, 10V | 5V @ 100μA | 3.5A Tc | 12.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STF10N62K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfi10n62k3-datasheets-5412.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | SINGLE | STF10N | 3 | 30W | 1 | FET General Purpose Power | 14.5 ns | 15ns | 31 ns | 41 ns | 8.4A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 3.75V | 30W Tc | TO-220AB | 0.75Ohm | 220 mJ | 620V | N-Channel | 1250pF @ 50V | 750m Ω @ 4A, 10V | 4.5V @ 100μA | 8.4A Tc | 42nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| IRFR024PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-irfu024pbf-datasheets-7718.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | No SVHC | 100mOhm | 3 | No | 1 | Single | 2.5W | 1 | D-Pak | 640pF | 13 ns | 58ns | 42 ns | 25 ns | 14A | 20V | 60V | 60V | 4V | 2.5W Ta 42W Tc | 100mOhm | 60V | N-Channel | 640pF @ 25V | 4 V | 100mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 25nC @ 10V | 100 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STB110N55F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 52 Weeks | STB110N | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA11N80AE-GE3 | Vishay Siliconix | $1.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha11n80aege3-datasheets-1156.pdf | TO-220-3 Full Pack | TO-220 Full Pack | 800V | 31W Tc | N-Channel | 804pF @ 100V | 450mOhm @ 5.5A, 10V | 4V @ 250μA | 8A Tc | 42nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP11N80AE-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp11n80aege3-datasheets-1154.pdf | TO-220-3 | TO-220AB | 800V | 78W Tc | N-Channel | 804pF @ 100V | 450mOhm @ 5.5A, 10V | 4V @ 250μA | 8A Tc | 42nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD9N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-std9n80k5-datasheets-1158.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 17 Weeks | EAR99 | NOT SPECIFIED | STD9N | NOT SPECIFIED | 800V | 110W Tc | N-Channel | 340pF @ 100V | 900m Ω @ 3.5A, 10V | 5V @ 100μA | 7A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STI6N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std6n80k5-datasheets-3682.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 17 Weeks | 2.084002g | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | STI6N | Single | 110W | 1 | 4.5A | 30V | SILICON | DRAIN | SWITCHING | 85W Tc | 85 mJ | 800V | N-Channel | 255pF @ 100V | 1.6 Ω @ 2A, 10V | 5V @ 100μA | 4.5A Tc | 7.5nC @ 10V | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STH52N10LF3-2AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F3 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 38 Weeks | STH52N | 100V | 110W Tc | N-Channel | 1900pF @ 400V | 20m Ω @ 26A, 10V | 2.5V @ 250μA | 52A Tc | 18.5nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STDLED627 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stdled627-datasheets-1164.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 3 | No | STDLE | 22 ns | 12ns | 20 ns | 49 ns | 7A | 30V | 620V | 90W Tc | N-Channel | 890pF @ 50V | 1.2 Ω @ 2.8A, 10V | 4.5V @ 50μA | 7A Tc | 35nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STFILED524 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfiled524-datasheets-1084.pdf | TO-262-3 Full Pack, I2Pak | 3 | 42 Weeks | 3 | No | SINGLE | STFILE | 1 | 8 ns | 7ns | 14 ns | 21 ns | 4A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | 525V | 525V | 20W Tc | TO-281 | 4A | 110 mJ | N-Channel | 340pF @ 100V | 2.6 Ω @ 2.2A, 10V | 4.5V @ 50μA | 4A Tc | 12nC @ 10V | 10V | ±30V |
