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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| RS1E280BNTB | ROHM Semiconductor | $0.69 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | 8-PowerTDFN | Lead Free | 5 | 20 Weeks | 8 | EAR99 | not_compliant | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 28A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3W Ta 30W Tc | 112A | 0.0032Ohm | N-Channel | 5100pF @ 15V | 2.3m Ω @ 28A, 10V | 2.5V @ 1mA | 28A Ta | 94nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN2A02N8TA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-zxmn2a02n8ta-datasheets-2493.pdf | 20V | 10.2A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 73.992255mg | No SVHC | 20mOhm | 8 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | 40 | 2.5W | 1 | FET General Purpose Power | 7.9 ns | 10ns | 10 ns | 33.3 ns | 10.2A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.56W Ta | 50A | 20V | N-Channel | 1900pF @ 10V | 20m Ω @ 11A, 4.5V | 700mV @ 250μA | 8.3A Ta | 18.9nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| IPU039N03LGXK | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu039n03lgxk-datasheets-2610.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | PG-TO251-3 | 5.3nF | 50A | 30V | 94W Tc | N-Channel | 5300pF @ 15V | 3.9mOhm @ 30A, 10V | 2.2V @ 250μA | 50A Tc | 51nC @ 10V | 3.9 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD75N3LLH6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp75n3llh6-datasheets-5297.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | 2 | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - annealed | SINGLE | GULL WING | 260 | STD75N | 3 | 60W | 1 | FET General Purpose Power | R-PSSO-G2 | 9.5 ns | 30ns | 12 ns | 37 ns | 75A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 1.7V | 60W Tc | 0.008Ohm | N-Channel | 1690pF @ 25V | 5.5m Ω @ 37.5A, 10V | 2.5V @ 250μA | 75A Tc | 17nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| ZXMP6A17GQTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/diodesincorporated-zxmp6a17gqta-datasheets-2615.pdf | TO-261-4, TO-261AA | Lead Free | 4 | 15 Weeks | 7.994566mg | No SVHC | 3 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | ZXMP6A17 | 1 | Single | 30 | 1 | Other Transistors | R-PDSO-G4 | 2.6 ns | 3.4ns | 11.3 ns | 26.2 ns | 3A | 20V | SILICON | DRAIN | SWITCHING | 60V | 2W Ta | 3A | -60V | P-Channel | 637pF @ 30V | 125m Ω @ 2.2A, 10V | 1V @ 250μA | 3A Ta | 17.7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SI3473CDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si3473cdvt1ge3-datasheets-5198.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | 22MOhm | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 2W | 1 | Other Transistors | 10 ns | 15ns | 35 ns | 62 ns | 8A | 8V | SILICON | SWITCHING | 12V | 4.2W Tc | 8A | -12V | P-Channel | 2010pF @ 6V | 22m Ω @ 8.1A, 4.5V | 1V @ 250μA | 8A Tc | 65nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| FK6K02010L | Panasonic Electronic Components | $0.21 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | DEPLETION MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-fk6k02010l-datasheets-2245.pdf | 6-SMD, Flat Leads | 2mm | 600μm | 1.7mm | 6 | 10 Weeks | No SVHC | 6 | EAR99 | unknown | DUAL | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | FET General Purpose Powers | 19 ns | 150 ns | 4.5A | 10V | SILICON | SWITCHING | 20V | 20V | 850mV | 700mW Ta | 0.0175Ohm | N-Channel | 1730pF @ 10V | 850 mV | 17.5m Ω @ 2A, 4.5V | 1.3V @ 1mA | 4.5A Ta | 2.5V 4V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FK4B01120L1 | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-fk4b01120l1-datasheets-2450.pdf | 4-XFLGA, CSP | 16 Weeks | 12V | 370mW Ta | N-Channel | 490pF @ 10V | 24m Ω @ 1.5A, 4.5V | 1V @ 394μA | 3.9A Ta | 7nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHW21N80AE-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihw21n80aege3-datasheets-2452.pdf | TO-247-3 | 14 Weeks | TO-247AD | 800V | 32W Tc | N-Channel | 1388pF @ 100V | 235mOhm @ 11A, 10V | 4V @ 250μA | 17.4A Tc | 72nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9Y38-100E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk9y38100e115-datasheets-2486.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | AVALANCHE RATED | Tin | not_compliant | e3 | YES | SINGLE | GULL WING | 4 | 1 | 1 | 10 ns | 18ns | 18 ns | 31 ns | 30A | 10V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 94.9W Tc | MO-235 | 0.038Ohm | 100V | N-Channel | 2541pF @ 25V | 38m Ω @ 5A, 5V | 2.1V @ 1mA | 30A Tc | 21.6nC @ 5V | 5V 10V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||
| BUK9M7R2-40EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk9m7r240ex-datasheets-2266.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AEC-Q101; IEC-60134 | SINGLE | GULL WING | 8 | 1 | R-PSSO-G4 | 70A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 79W Tc | 296A | 0.0072Ohm | 58.8 mJ | N-Channel | 2567pF @ 25V | 5.8m Ω @ 20A, 10V | 2.1V @ 1mA | 70A Tc | 19.7nC @ 5V | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN6013LFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmn6013lfg7-datasheets-2500.pdf | 8-PowerVDFN | 5 | 23 Weeks | 72.007789mg | 8 | EAR99 | e3 | Matte Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | S-PDSO-N5 | 6.2 ns | 9.9ns | 11.7 ns | 27.6 ns | 45A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 1W Ta | N-Channel | 2577pF @ 30V | 13m Ω @ 10A, 10V | 3V @ 250μA | 10.3A Ta 45A Tc | 55.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| DN1509N8-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/microchiptechnology-dn1509k1g-datasheets-1523.pdf | TO-243AA | 4.6mm | 1.6mm | 2.6mm | Lead Free | 3 | 6 Weeks | 52.786812mg | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) | FLAT | 260 | 1 | Single | 40 | 1.6W | 1 | FET General Purpose Power | 12 ns | 16ns | 16 ns | 15 ns | 360mA | 20V | SILICON | DRAIN | SWITCHING | 1.6W Ta | 6Ohm | 90V | N-Channel | 150pF @ 25V | 6 Ω @ 200mA, 0V | 360mA Tj | Depletion Mode | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| RQ3L050GNTB | ROHM Semiconductor | $0.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerVDFN | 5 | 20 Weeks | EAR99 | not_compliant | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 14.8W Tc | 5A | 20A | 0.086Ohm | 3.9 mJ | N-Channel | 300pF @ 30V | 61m Ω @ 5A, 10V | 2.5V @ 25μA | 12A Tc | 2.8nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9M28-80EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk9m2880ex-datasheets-2201.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AEC-Q101; IEC-60134 | SINGLE | GULL WING | 8 | 1 | R-PSSO-G4 | 33A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 75W Tc | 131A | 0.028Ohm | 42.2 mJ | N-Channel | 2275pF @ 25V | 25m Ω @ 10A, 10V | 2.1V @ 1mA | 33A Tc | 16.7nC @ 5V | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7Y53-100B,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk7y53100b115-datasheets-2100.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 4 | Tin | No | e3 | YES | SINGLE | GULL WING | 4 | 85W | 1 | 15.3 ns | 7.8ns | 7.7 ns | 34 ns | 24.8A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 85W Tc | 99A | 0.053Ohm | N-Channel | 1467pF @ 25V | 53m Ω @ 10A, 10V | 4V @ 1mA | 24.8A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA14DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sira14dpt1ge3-datasheets-2376.pdf | PowerPAK® SO-8 | 5.969mm | 1.0668mm | 5.0038mm | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | EAR99 | Tin | No | DUAL | FLAT | 1 | Single | 3.6W | 1 | FET General Purpose Power | R-PDSO-F5 | 15 ns | 16 ns | 18 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 1.1V | 3.6W Ta 31.2W Tc | 30V | N-Channel | 1450pF @ 15V | 5.1m Ω @ 10A, 10V | 2.2V @ 250μA | 58A Tc | 29nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||
| DMP2006UFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/diodesincorporated-dmp2006ufg7-datasheets-2117.pdf | 8-PowerVDFN | 5.404nF | 23 Weeks | 72.007789mg | 8 | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 9.1 ns | 19ns | 104 ns | 146 ns | 40A | 10V | 20V | 2.3W Ta | P-Channel | 5404pF @ 10V | 5.2m Ω @ 15A, 4.5V | 1V @ 250μA | 17.5A Ta 40A Tc | 140nC @ 10V | 1.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTBLS0D7N06C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntbls0d7n06c-datasheets-1854.pdf | 8-PowerSFN | 17 Weeks | yes | 60V | 4.2W Ta 314W Tc | N-Channel | 13730pF @ 30V | 750μ Ω @ 80A, 10V | 4V @ 661μA | 54A Ta 470A Tc | 170nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CPC3701CTR | IXYS Integrated Circuits Division | $0.75 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-cpc3701ctr-datasheets-2482.pdf | TO-243AA | Lead Free | 8 Weeks | 130.492855mg | 4 | Single | SOT-89 | 70 ns | 70ns | 150 ns | 50 ns | 600mA | 15V | 60V | 1.1W Ta | 1Ohm | N-Channel | 1Ohm @ 300mA, 0V | Depletion Mode | 1 Ω | 0V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9M43-100EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk9m43100ex-datasheets-2176.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AEC-Q101; IEC-60134 | SINGLE | GULL WING | 8 | 1 | R-PSSO-G4 | 25A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 80W Tc | 26A | 103A | 0.044Ohm | 42.7 mJ | N-Channel | 2309pF @ 25V | 43m Ω @ 5A, 10V | 2.1V @ 1mA | 25A Tc | 20.2nC @ 5V | 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD4243 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdd4243-datasheets-2183.pdf | -40V | -14A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 260.37mg | No SVHC | 44MOhm | 3 | ACTIVE (Last Updated: 6 hours ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 42W | 1 | Other Transistors | Not Qualified | R-XSSO-G2 | 6 ns | 15ns | 7 ns | 22 ns | -6.7A | 20V | -40V | SILICON | 40V | -1.6V | 42W Tc | 60A | 84 mJ | -40V | P-Channel | 1550pF @ 20V | -1.6 V | 44m Ω @ 6.7A, 10V | 3V @ 250μA | 6.7A Ta 14A Tc | 29nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| GKI07301 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-gki07301-datasheets-2200.pdf | 8-PowerTDFN | Lead Free | 12 Weeks | 8 | NOT SPECIFIED | NOT SPECIFIED | 6A | 75V | 3.1W Ta 46W Tc | N-Channel | 1580pF @ 25V | 23.2m Ω @ 12.4A, 10V | 2.5V @ 350μA | 6A Ta | 24nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA70EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqja70ept1ge3-datasheets-2212.pdf | PowerPAK® SO-8 | 4 | 12 Weeks | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 27W Tc | 14.7A | 18A | 0.208Ohm | 5 mJ | N-Channel | 220pF @ 25V | 95m Ω @ 4A, 10V | 3.5V @ 250μA | 14.7A Tc | 7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ3427AEEV-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sq3427aeevt1ge3-datasheets-2238.pdf | SOT-23-6 Thin, TSOT-23-6 | 1.1mm | Lead Free | 6 | 12 Weeks | No SVHC | 6 | EAR99 | unknown | DUAL | GULL WING | 1 | 5W | 1 | 175°C | 8 ns | 24ns | 33 ns | 26 ns | -5.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | -2V | 5W Tc | 0.095Ohm | 75 pF | -60V | P-Channel | 1000pF @ 30V | 95m Ω @ 4.5A, 10V | 2.5V @ 250μA | 5.3A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| RP1E090RPTR | ROHM Semiconductor | $2.92 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rp1e090rptr-datasheets-2257.pdf | 6-SMD, Flat Leads | 6 | 6 | yes | EAR99 | e2 | TIN COPPER | DUAL | 260 | 6 | 10 | 2W | 1 | Other Transistors | Not Qualified | 9A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 2W Ta | 9A | 0.0294Ohm | -30V | P-Channel | 3000pF @ 10V | 16.9m Ω @ 9A, 10V | 2.5V @ 1mA | 9A Ta | 30nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STS12N3LLH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sts12n3llh5-datasheets-2217.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | 260 | STS12 | 8 | 2.7W | 1 | FET General Purpose Power | 8.6 ns | 11.2ns | 6 ns | 32.4 ns | 12A | 22V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.7W Tc | 0.0097Ohm | N-Channel | 1290pF @ 25V | 7.5m Ω @ 6A, 10V | 1V @ 250μA | 12A Tc | 8nC @ 4.5V | 4.5V 10V | +22V, -20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPA60R125P6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa60r125p6xksa1-datasheets-2313.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 14 ns | 9ns | 5 ns | 44 ns | 30A | 30V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 34W Tc | TO-220AB | 87A | 0.125Ohm | N-Channel | 2660pF @ 100V | 125m Ω @ 11.6A, 10V | 4.5V @ 960μA | 30A Tc | 56nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDS8896 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fds8896-datasheets-2223.pdf | 30V | 15A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 18 Weeks | 130mg | No SVHC | 6MOhm | 8 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | Tin | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 8 ns | 37ns | 24 ns | 60 ns | 15A | 20V | SILICON | SWITCHING | 1.2V | 2.5W Ta | 30V | N-Channel | 2525pF @ 15V | 6m Ω @ 15A, 10V | 2.5V @ 250μA | 15A Ta | 67nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SIR484DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sir484dpt1ge3-datasheets-2155.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 15 Weeks | 506.605978mg | 8.3mOhm | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Power | R-XDSO-C5 | 15 ns | 12ns | 10 ns | 17 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 3.9W Ta 29.8W Tc | 50A | 24 mJ | 20V | N-Channel | 830pF @ 10V | 8.3m Ω @ 17.2A, 10V | 2.5V @ 250μA | 20A Tc | 23nC @ 10V | 4.5V 10V | ±20V |
