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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| DMN2120UFCL-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn2120ufcl7-datasheets-7267.pdf | 6-PowerUFDFN | 17 Weeks | 20V | 450mW Ta | N-Channel | 130pF @ 10V | 100m Ω @ 3.6A, 4.5V | 1V @ 250μA | 1.8A Ta | 2.8nC @ 10V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002H-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/diodesincorporated-2n7002h7-datasheets-4520.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 14 Weeks | yes | EAR99 | HIGH RELIABILITY | 8541.21.00.95 | e3 | Matte Tin (Sn) - annealed | AEC-Q101 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | 170mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 370mW Ta | 0.17A | N-Channel | 26pF @ 25V | 7.5 Ω @ 50mA, 5V | 3V @ 250μA | 170mA Ta | 0.35nC @ 4.5V | 5V | ±20V | |||||||||||||||||||||||||||||||||||
| IXTN210P10T | IXYS | $41.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchP™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtn210p10t-datasheets-7268.pdf | SOT-227-4, miniBLOC | 4 | 28 Weeks | EAR99 | AVALANCHE RATED, UL RECOGNIZED | unknown | UPPER | UNSPECIFIED | 4 | 1 | FET General Purpose Power | R-PUFM-X4 | 210A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 100V | 100V | 830W Tc | 800A | 0.0075Ohm | 3000 mJ | P-Channel | 69500pF @ 25V | 7.5m Ω @ 105A, 10V | 4.5V @ 250μA | 210A Tc | 740nC @ 10V | 10V | ±15V | ||||||||||||||||||||||||||||||||||
| SSM3K37CT,L3F | Toshiba Semiconductor and Storage | $0.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | SC-101, SOT-883 | 12 Weeks | 200mA | 20V | 100mW Ta | N-Channel | 12pF @ 10V | 2.2 Ω @ 100mA, 4.5V | 1V @ 1mA | 200mA Ta | 1.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002CKVL | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | 150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/nexperiausainc-2n7002ck215-datasheets-4678.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | LOGIC LEVEL COMPATIBLE | IEC-60134 | YES | DUAL | GULL WING | 3 | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 350mW Ta | TO-236AB | 0.3A | 7.5 pF | N-Channel | 55pF @ 25V | 1.6 Ω @ 500mA, 10V | 2.5V @ 250μA | 300mA Ta | 1.3nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXTN46N50L | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Panel, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/ixys-ixtn46n50l-datasheets-7233.pdf | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.07mm | Lead Free | 4 | 28 Weeks | 160mOhm | 4 | yes | AVALANCHE RATED | No | NICKEL | UPPER | UNSPECIFIED | 4 | Single | 700W | 1 | FET General Purpose Power | 40 ns | 50ns | 42 ns | 80 ns | 46A | 30V | SILICON | ISOLATED | SWITCHING | 700W Tc | 500V | N-Channel | 7000pF @ 25V | 160m Ω @ 500mA, 20V | 6V @ 250μA | 46A Tc | 260nC @ 15V | 20V | ±30V | ||||||||||||||||||||||||||||
| NX138BKVL | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/nexperiausainc-nx138bkr-datasheets-0485.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | IEC-60134 | YES | DUAL | GULL WING | 3 | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 310mW Ta | TO-236AB | 0.265A | 3.8Ohm | N-Channel | 20.2pF @ 30V | 3.5 Ω @ 200mA, 10V | 1.5V @ 250μA | 265mA Ta | 0.49nC @ 30V | 2.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| DMN2450UFB4-7B | Diodes Incorporated | $0.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 3-XFDFN | 23 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | NOT SPECIFIED | NOT SPECIFIED | 20V | 500mW Ta | N-Channel | 56pF @ 16V | 400m Ω @ 600mA, 4.5V | 900mV @ 250μA | 1A Ta | 1.3nC @ 10V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS84LT7G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-236-3, SC-59, SOT-23-3 | 3 | 40 Weeks | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 10 | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 50V | 50V | 225mW Ta | 0.13A | P-Channel | 36pF @ 5V | 10 Ω @ 100mA, 5V | 2V @ 250μA | 130mA Ta | 2.2nC @ 10V | 5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| UF3SC065007K4S | UnitedSiC | $62.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | SiCFET (Cascode SiCJFET) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/unitedsic-uf3sc065007k4s-datasheets-7198.pdf | TO-247-4 | 20 Weeks | 650V | 789W Tc | N-Channel | 9m Ω @ 50A, 12V | 6V @ 10mA | 120A Tc | 214nC @ 15V | 12V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN102N30P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHV™ | Chassis Mount, Panel | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfn102n30p-datasheets-7201.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.42mm | Lead Free | 4 | 30 Weeks | 33MOhm | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 600W | 1 | Not Qualified | 30 ns | 28ns | 30 ns | 130 ns | 88A | 20V | SILICON | ISOLATED | SWITCHING | 600W Tc | 250A | 5000 mJ | 300V | N-Channel | 7500pF @ 25V | 33m Ω @ 500mA, 10V | 5V @ 4mA | 88A Tc | 224nC @ 10V | 10V | ±20V | |||||||||||||||||||||||
| BSS138-13-F | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-236-3, SC-59, SOT-23-3 | 16 Weeks | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 50V | 300mW Ta | N-Channel | 50pF @ 10V | 3.5 Ω @ 220mA, 10V | 1.5V @ 250μA | 200mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN44N100Q3 | IXYS | $53.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Panel | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/ixys-ixfn44n100q3-datasheets-7206.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.07mm | 4 | 30 Weeks | 4 | UL RECOGNIZED | UPPER | UNSPECIFIED | 4 | Single | 960W | 1 | FET General Purpose Power | Not Qualified | 48 ns | 300ns | 66 ns | 38A | 30V | SILICON | ISOLATED | SWITCHING | 1000V | 960W Tc | 110A | 0.22Ohm | 1kV | N-Channel | 13600pF @ 25V | 220m Ω @ 22A, 10V | 6.5V @ 8mA | 38A Tc | 264nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| 2N7002LT7G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-2n7002lt3g-datasheets-2359.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | yes | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 225mW Ta | 0.115A | 5 pF | N-Channel | 50pF @ 25V | 7.5 Ω @ 500mA, 10V | 2.5V @ 250μA | 115mA Tc | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSS123LT7G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-bss123lt1g-datasheets-5749.pdf | 3 | yes | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 225mW Ta | TO-236 | 0.17A | 6Ohm | N-Channel | 20pF @ 25V | 6 Ω @ 100mA, 10V | 2.6V @ 1mA | 15μA | Standard | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SIHG80N60EF-GE3 | Vishay Siliconix | $12.80 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EF | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg80n60efge3-datasheets-7178.pdf | TO-247-3 | 14 Weeks | TO-247AC | 600V | 520W Tc | N-Channel | 6600pF @ 100V | 32mOhm @ 40A, 10V | 4V @ 250μA | 80A Tc | 400nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMZ600UNEZ | Nexperia USA Inc. | $0.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmz600uneyl-datasheets-4213.pdf | SC-101, SOT-883 | 8 Weeks | 20V | 360mW Ta 2.7W Tc | N-Channel | 21.3pF @ 10V | 620m Ω @ 600mA, 4.5V | 950mV @ 250μA | 600mA Ta | 0.7nC @ 4.5V | 1.2V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVHL020N090SC1 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvhl020n090sc1-datasheets-7181.pdf | TO-247-3 Variant | 19 Weeks | yes | 900V | 503W Tc | N-Channel | 4415pF @ 450V | 28m Ω @ 60A, 15V | 4.3V @ 20mA | 118A Tc | 196nC @ 15V | 15V | +19V, -10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN70N120SK | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -40°C~175°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfn70n120sk-datasheets-7216.pdf | SOT-227-4, miniBLOC | 28 Weeks | 1200V | N-Channel | 2790pF @ 1000V | 34m Ω @ 50A, 20V | 4V @ 15mA | 68A Tc | 161nC @ 20V | 20V | +20V, -5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFB30N120P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarP2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixfb30n120p-datasheets-7182.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 26 Weeks | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 1.25kW | 1 | FET General Purpose Power | Not Qualified | 60ns | 56 ns | 95 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 1200V | 1250W Tc | 75A | 2000 mJ | 1.2kV | N-Channel | 22500pF @ 25V | 350m Ω @ 500mA, 10V | 6.5V @ 1mA | 30A Tc | 310nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| UJ3C065030K3S | UnitedSiC | $15.95 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | SiCFET (Cascode SiCJFET) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/unitedsic-uj3c065030k3s-datasheets-7184.pdf | TO-247-3 | 12 Weeks | 650V | 441W Tc | N-Channel | 1500pF @ 100V | 35m Ω @ 50A, 12V | 6V @ 10mA | 85A Tc | 51nC @ 15V | 12V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTH6N120 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/ixys-ixtt6n120-datasheets-5569.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | 2.6Ohm | 3 | yes | EAR99 | AVALANCHE RATED | not_compliant | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 300W | 1 | Not Qualified | 33ns | 18 ns | 42 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 1200V | 300W Tc | TO-247AD | 6A | 24A | 500 mJ | 1.2kV | N-Channel | 1950pF @ 25V | 2.6 Ω @ 3A, 10V | 5V @ 250μA | 6A Tc | 56nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| IXTH40N50L2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/ixys-ixtt40n50l2-datasheets-2083.pdf | TO-247-3 | 3 | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 540W | 1 | FET General Purpose Powers | 40A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 2.5V | 540W Tc | 80A | 2000 mJ | N-Channel | 10400pF @ 25V | 2.5 V | 170m Ω @ 20A, 10V | 4.5V @ 250μA | 40A Tc | 320nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| UF3C065030K3S | UnitedSiC | $15.67 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | SiCFET (Cascode SiCJFET) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/unitedsic-uf3c065030k3s-datasheets-7191.pdf | TO-247-3 | 12 Weeks | 650V | 441W Tc | N-Channel | 1500pF @ 100V | 35m Ω @ 50A, 12V | 6V @ 10mA | 85A Tc | 51nC @ 15V | 12V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN65D9L-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 13 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM100UM45DAG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm100um45dag-datasheets-7193.pdf | SP6 | 5 | 16 Weeks | 6 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 5 | 5kW | 1 | R-XUFM-X5 | 18 ns | 14ns | 55 ns | 140 ns | 215A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1000V | 5000W Tc | 0.052Ohm | 3200 mJ | N-Channel | 42700pF @ 25V | 52m Ω @ 107.5A, 10V | 5V @ 30mA | 215A Tc | 1602nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IXTH2N170D2 | IXYS | $16.96 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtt2n170d2-datasheets-9412.pdf | TO-247-3 | Lead Free | 568W | 1 | FET General Purpose Power | 2A | 20V | Single | 1700V | 568W Tc | N-Channel | 3650pF @ 10V | 6.5 Ω @ 1A, 0V | 2A Tj | 110nC @ 5V | Depletion Mode | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK27N80Q | IXYS | $6.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/ixys-ixfk27n80q-datasheets-7167.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | Lead Free | 3 | 30 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 20 ns | 28ns | 13 ns | 50 ns | 27A | 20V | SILICON | DRAIN | SWITCHING | 500W Tc | 108A | 2500 mJ | 800V | N-Channel | 7600pF @ 25V | 320m Ω @ 500mA, 10V | 4.5V @ 4mA | 27A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IXFN200N10P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Polar™ | Chassis Mount | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfn200n10p-datasheets-7169.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 30 Weeks | No SVHC | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | unknown | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 680W | 1 | Not Qualified | 35ns | 90 ns | 150 ns | 200A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 5V | 680W Tc | 0.0075Ohm | 100V | N-Channel | 7600pF @ 25V | 7.5m Ω @ 500mA, 10V | 5V @ 8mA | 200A Tc | 235nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| UJ3C065030T3S | UnitedSiC | $15.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | SiCFET (Cascode SiCJFET) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/unitedsic-uj3c065030t3s-datasheets-7171.pdf | TO-220-3 | 12 Weeks | 650V | 441W Tc | N-Channel | 1500pF @ 100V | 35m Ω @ 50A, 12V | 6V @ 10mA | 85A Tc | 51nC @ 15V | 12V | ±25V |
