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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Diameter | Package / Case | Length | Height | Width | Color | Lead Free | Material | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Wire Gauge (Max) | Wire Gauge (Min) | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Plating | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| ZXMP10A17GQTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-zxmp10a17gqta-datasheets-2381.pdf | TO-261-4, TO-261AA | 15 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1.7A | 100V | 2W Ta | P-Channel | 424pF @ 50V | 450m Ω @ 1.2A, 6V | 4V @ 250μA | 1.7A Ta | 10.7nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPL65R1K5C6SATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C6 | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipl65r1k5c6satma1-datasheets-1381.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | 75.891673mg | 8 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PDSO-N5 | 7.7 ns | 5.9ns | 18.2 ns | 33 ns | 3A | 30V | 650V | SILICON | DRAIN | SWITCHING | 26.6W Tc | 26 mJ | 650V | N-Channel | 225pF @ 100V | 1.5 Ω @ 1A, 10V | 3.5V @ 100μA | 3A Tc | 11nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| NVMFS5C450NLAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvmfs5c450nlwfaft1g-datasheets-4970.pdf | 8-PowerTDFN, 5 Leads | 5 Weeks | ACTIVE (Last Updated: 6 days ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 68W Tc | N-Channel | 2100pF @ 20V | 2.8m Ω @ 40A, 10V | 2V @ 250μA | 110A Tc | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RCD050N20TL | ROHM Semiconductor | $3.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rcd050n20tl-datasheets-1389.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 40 Weeks | 3 | EAR99 | No | SINGLE | GULL WING | 1 | R-PSSO-G2 | 17 ns | 15ns | 11 ns | 22 ns | 5A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 20W Tc | 5A | 20A | 0.618Ohm | N-Channel | 380pF @ 25V | 618m Ω @ 2.5A, 10V | 5.25V @ 1mA | 5A Ta | 9nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| BUK7611-55B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk761155b118-datasheets-1392.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | YES | GULL WING | 3 | Single | 157W | 1 | R-PSSO-G2 | 11 ns | 45ns | 27 ns | 41 ns | 84A | 20V | 55V | SILICON | DRAIN | SWITCHING | 157W Tc | 75A | 0.011Ohm | 55V | N-Channel | 2604pF @ 25V | 11m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 37nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| AOT12N30L | Alpha & Omega Semiconductor Inc. | $0.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | TO-220-3 | 18 Weeks | FET General Purpose Power | 11.5A | Single | 300V | 132W Tc | N-Channel | 790pF @ 25V | 420m Ω @ 6A, 10V | 4.5V @ 250μA | 11.5A Tc | 16nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF8N50 | Alpha & Omega Semiconductor Inc. | $0.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | 3 | 38.5W | 1 | FET General Purpose Power | 8A | 30V | Single | 500V | 38.5W Tc | 8A | N-Channel | 1042pF @ 25V | 850m Ω @ 4A, 10V | 4.5V @ 250μA | 8A Tc | 28nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS6H852NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs6h852nt1g-datasheets-1414.pdf | 8-PowerTDFN, 5 Leads | 4 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 80V | 3.6W Ta 54W Tc | N-Channel | 760pF @ 40V | 14.2m Ω @ 10A, 10V | 4V @ 45μA | 10A Ta 40A Tc | 13nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM061NA03CV RGG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm061na03cvrgg-datasheets-1418.pdf | 8-PowerWDFN | 5 | 28 Weeks | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 44.6W Tc | 15A | 264A | 0.0081Ohm | 63 mJ | N-Channel | 1136pF @ 15V | 6.1m Ω @ 16A, 10V | 2.5V @ 250μA | 66A Tc | 19.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| DMPH3010LK3Q-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmph3010lk3q13-datasheets-1420.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 15 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 3.9W Ta | P-Channel | 6807pF @ 15V | 7.5m Ω @ 10A, 10V | 2.1V @ 250μA | 50A Tc | 139nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9637-100E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Crimp | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk9637100e118-datasheets-1184.pdf | 12.7mm | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 15.875mm | Black | Brass, Metal | 2 | 12 Weeks | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | GULL WING | 3 | 1 | Single | 1 | R-PSSO-G2 | 14.8 ns | 44.1ns | 35.1 ns | 33.7 ns | 31A | 15V | 100V | DRAIN | SWITCHING | 28 AWG | 24 AWG | 96W Tc | Gold | 44 mJ | 100V | N-Channel | 2681pF @ 25V | 36m Ω @ 10A, 10V | 2.1V @ 1mA | 31A Tc | 22.8nC @ 5V | 5V 10V | ±10V | |||||||||||||||||||||||||||||||||
| NVTFS6H850NWFTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/onsemiconductor-nvtfs6h850nwftag-datasheets-1348.pdf | 8-PowerWDFN | 5 | 18 Weeks | ACTIVE (Last Updated: 6 hours ago) | yes | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 80V | 80V | 3.2W Ta 107W Tc | 11A | 300A | 0.0095Ohm | 271 mJ | N-Channel | 1140pF @ 40V | 9.5m Ω @ 10A, 10V | 4V @ 70μA | 11A Ta 68A Tc | 19nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| UPA2820T1S-E2-AT | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-upa2820t1se2at-datasheets-1276.pdf | 8-PowerWDFN | 16 Weeks | 8 | yes | EAR99 | NOT SPECIFIED | 8 | NOT SPECIFIED | FET General Purpose Power | 22A | Single | 30V | 1.5W Ta 16W Tc | N-Channel | 2330pF @ 10V | 5.3m Ω @ 22A, 10V | 22A Tc | 50nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7Y7R2-60EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7y7r260ex-datasheets-1352.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | AVALANCHE RATED | Tin | YES | SINGLE | GULL WING | 4 | 1 | 1 | 11.4 ns | 18.3ns | 20 ns | 33.4 ns | 100A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 167W Tc | MO-235 | 7.2mOhm | 88.2 mJ | 60V | N-Channel | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| AOTF7N60 | Alpha & Omega Semiconductor Inc. | $0.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | FET General Purpose Power | 7A | Single | 600V | 38.5W Tc | 7A | N-Channel | 1035pF @ 25V | 1.2 Ω @ 3.5A, 10V | 4.5V @ 250μA | 7A Tc | 28nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPA2816T1S-E2-AT | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-upa2816t1se2at-datasheets-1286.pdf | 8-PowerWDFN | 16 Weeks | 8 | yes | EAR99 | NOT SPECIFIED | 8 | NOT SPECIFIED | Other Transistors | 12 ns | 35ns | 80 ns | 55 ns | 17A | 20V | Single | 30V | 1.5W Ta | P-Channel | 1160pF @ 10V | 15.5m Ω @ 17A, 10V | 17A Tc | 33.4nC @ 10V | 4.5V 10V | +20V, -25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| GKI10194 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/sanken-gki10194-datasheets-1196.pdf | 8-PowerTDFN | Lead Free | 12 Weeks | 8 | NOT SPECIFIED | NOT SPECIFIED | 7A | 100V | 3.1W Ta 77W Tc | N-Channel | 3990pF @ 25V | 17.6m Ω @ 20.4A, 10V | 2.5V @ 1mA | 7A Ta | 55.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GKI03026 | Sanken | $14.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/sanken-gki03026-datasheets-1255.pdf | 8-PowerTDFN | Lead Free | 8 | yes | NOT SPECIFIED | NOT SPECIFIED | 22A | 30V | 3.1W Ta 77W Tc | N-Channel | 4010pF @ 15V | 2.6m Ω @ 68A, 10V | 2.5V @ 1mA | 22A Ta | 64nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF634B-FP001 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-irf634bfp001-datasheets-1309.pdf | TO-220-3 | 3 | 1.8g | ACTIVE, NOT REC (Last Updated: 3 weeks ago) | yes | No | e3 | Tin (Sn) | Single | 74W | 1 | R-PSFM-T3 | 15 ns | 75ns | 65 ns | 100 ns | 8.1A | 30V | SILICON | SWITCHING | 74W Tc | TO-220AB | 32.4A | 200 mJ | 250V | N-Channel | 1000pF @ 25V | 450m Ω @ 4.05A, 10V | 4V @ 250μA | 8.1A Tc | 38nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| DMT6009LFG-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt6009lfg7-datasheets-2347.pdf | 8-PowerVDFN | 23 Weeks | 8 | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 34A | 60V | 2.08W Ta 19.2W Tc | N-Channel | 1925pF @ 30V | 10m Ω @ 13.5A, 10V | 2V @ 250μA | 11A Ta 34A Tc | 33.5nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVD5C460NLT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvd5c460nlt4g-datasheets-1320.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | 40V | 3W Ta 47W Tc | N-Channel | 2100pF @ 25V | 4.6m Ω @ 25A, 10V | 2.2V @ 60μA | 18A Ta 73A Tc | 36nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3008SCP10-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 17 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | NOT SPECIFIED | NOT SPECIFIED | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7665S2TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf7665s2tr-datasheets-1324.pdf | DirectFET™ Isometric SB | 4.826mm | 558.8μm | 3.95mm | 2 | 12 Weeks | No SVHC | 3 | EAR99 | No | BOTTOM | Single | 2.4W | 1 | FET General Purpose Power | R-XBCC-N2 | 3.8 ns | 6.4ns | 3.6 ns | 7.1 ns | 14.4A | 20V | SILICON | DRAIN | AMPLIFIER | 4V | 2.4W Ta 30W Tc | 77A | 58A | 0.062Ohm | 100V | N-Channel | 515pF @ 25V | 62m Ω @ 8.9A, 10V | 5V @ 25μA | 4.1A Ta 14.4A Tc | 13nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIS776DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis776dnt1ge3-datasheets-1330.pdf | PowerPAK® 1212-8 | 5 | 15 Weeks | 8 | EAR99 | No | DUAL | C BEND | 8 | 1 | FET General Purpose Powers | S-XDSO-C5 | 18 ns | 11ns | 10 ns | 20 ns | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.8W Ta 52W Tc | 60A | 0.0062Ohm | 20 mJ | N-Channel | 1360pF @ 15V | 6.2m Ω @ 10A, 10V | 2.5V @ 250μA | 35A Tc | 36nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| DMTH4005SPS-13 | Diodes Incorporated | $0.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth4005sps13-datasheets-1298.pdf | 8-PowerTDFN | 22 Weeks | 8 | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100A | 40V | 2.6W Ta 150W Tc | N-Channel | 3062pF @ 20V | 3.7m Ω @ 50A, 10V | 4V @ 250μA | 20.9A Ta 100A Tc | 49.1nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPLK70R600P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-iplk70r600p7atma1-datasheets-1342.pdf | 8-PowerTDFN | 18 Weeks | 700V | N-Channel | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD30N05-20L_T4GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib422edkt1ge3-datasheets-2177.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 55V | 50W Tc | N-Channel | 1175pF @ 25V | 20mOhm @ 20A, 10V | 2.5V @ 250μA | 30A Tc | 18nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMYS4D6N04CLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmys4d6n04cltwg-datasheets-1267.pdf | SOT-1023, 4-LFPAK | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.6W Ta 50W Tc | N-Channel | 1300pF @ 25V | 4.5m Ω @ 35A, 10V | 2V @ 40μA | 21A Ta 78A Tc | 23nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9210TRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu9210pbf-datasheets-5149.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 14 Weeks | 1.437803g | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | MATTE TIN | GULL WING | 260 | 3 | 1 | Single | 30 | 2.5W | 1 | R-PSSO-G2 | 8 ns | 12ns | 13 ns | 11 ns | 1.9A | 20V | SILICON | DRAIN | SWITCHING | 200V | 2.5W Ta 25W Tc | TO-252AA | 7.6A | 3Ohm | -200V | P-Channel | 170pF @ 25V | 3 Ω @ 1.1A, 10V | 4V @ 250μA | 1.9A Tc | 8.9nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| BSC084P03NS3EGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-bsc084p03ns3egatma1-datasheets-1269.pdf | 8-PowerTDFN | Contains Lead | 5 | 13 Weeks | 8 | no | EAR99 | No | e3 | Tin (Sn) | Halogen Free | DUAL | FLAT | 8 | 2.5W | 1 | R-PDSO-F5 | 16.4 ns | 133.5ns | 8.1 ns | 33.3 ns | 14.9A | 25V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 2.5W Ta 69W Tc | 200A | P-Channel | 4240pF @ 15V | 8.4m Ω @ 50A, 10V | 3V @ 110μA | 14.9A Ta 78.6A Tc | 57.7nC @ 10V | 6V 10V | ±25V |
