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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFR18N15DTRRP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr18n15dtrlp-datasheets-9093.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 150V | 110W Tc | N-Channel | 900pF @ 25V | 125m Ω @ 11A, 10V | 5.5V @ 250μA | 18A Tc | 43nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSD150N06TL | ROHM Semiconductor | $5.69 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 10 Weeks | 3 | yes | EAR99 | No | e2 | Tin/Copper (Sn98Cu2) | SINGLE | GULL WING | 260 | 3 | 1 | 10 | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 30ns | 15 ns | 45 ns | 15A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 20W Tc | N-Channel | 930pF @ 10V | 40m Ω @ 15A, 10V | 3V @ 1mA | 15A Ta | 18nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| AOTF9N50 | Alpha & Omega Semiconductor Inc. | $6.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | 3 | 38.5W | 1 | FET General Purpose Power | 9A | 30V | Single | 500V | 38.5W Tc | 9A | N-Channel | 1042pF @ 25V | 850m Ω @ 4.5A, 10V | 4.5V @ 250μA | 9A Tc | 28nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RCD060N25TL | ROHM Semiconductor | $5.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 10 Weeks | 3 | EAR99 | No | SINGLE | GULL WING | 1 | 1 | R-PSSO-G2 | 22 ns | 20ns | 13 ns | 30 ns | 6A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 850mW Ta 20W Tc | 6A | 250V | N-Channel | 840pF @ 25V | 530m Ω @ 3A, 10V | 5V @ 1mA | 6A Tc | 15nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C628NWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c628nt1g-datasheets-9039.pdf | 8-PowerTDFN, 5 Leads | 12 Weeks | yes | 60V | 3.7W Ta 110W Tc | N-Channel | 2630pF @ 30V | 3m Ω @ 27A, 10V | 4V @ 135μA | 28A Ta 150A Tc | 34nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4668DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4668dyt1e3-datasheets-9151.pdf | 8-SOIC (0.154, 3.90mm Width) | 21 Weeks | 8 | No | Single | 2.5W | 8-SO | 1.654nF | 12ns | 18 ns | 73 ns | 16.2A | 16V | 25V | 2.5W Ta 5W Tc | 10.5mOhm | 25V | N-Channel | 1654pF @ 15V | 10.5mOhm @ 15A, 10V | 2.6V @ 250μA | 16.2A Tc | 42nC @ 10V | 10.5 mΩ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4C302NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/onsemiconductor-ntmfs4c302nt1g-datasheets-9227.pdf | 8-PowerTDFN, 5 Leads | 5 | 16 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | e3 | Tin (Sn) | YES | DUAL | FLAT | 260 | 30 | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 30V | 3.13W Ta 96W Tc | 900A | 0.0017Ohm | 186 mJ | N-Channel | 5780pF @ 15V | 1.15m Ω @ 30A, 10V | 2.2V @ 250μA | 41A Ta 230A Tc | 82nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI4668DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4668dyt1e3-datasheets-9151.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 13 Weeks | EAR99 | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 40 | 2.5W | 1 | Not Qualified | R-PDSO-G8 | 12ns | 18 ns | 73 ns | 16.2A | 16V | SILICON | 2.5W Ta 5W Tc | 11.5A | 0.0105Ohm | 25V | N-Channel | 1654pF @ 15V | 10.5m Ω @ 15A, 10V | 2.6V @ 250μA | 16.2A Tc | 42nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||
| IPD65R950CFDATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD2 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd65r950cfdatma1-datasheets-9113.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 650V | 36.7W Tc | N-Channel | 380pF @ 100V | 950m Ω @ 1.5A, 10V | 4.5V @ 200μA | 3.9A Tc | 14.1nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF5N50NZU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET-II™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdpf5n50nzu-datasheets-9154.pdf | TO-220-3 Full Pack | 10.16mm | 15.87mm | 4.7mm | 3 | 9 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | TIN | 260 | Single | 30W | 1 | FET General Purpose Power | 12 ns | 19ns | 22 ns | 31 ns | 3.9A | 25V | SILICON | ISOLATED | SWITCHING | 30W Tc | TO-220AB | 2Ohm | 500V | N-Channel | 485pF @ 25V | 2 Ω @ 1.95A, 10V | 5V @ 250μA | 3.9A Tc | 12nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||
| AON6298 | Alpha & Omega Semiconductor Inc. | $0.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | 8-PowerSMD, Flat Leads | 18 Weeks | 8 | No | 78W | 1 | FET General Purpose Power | 46A | 20V | Single | 100V | 7.4W Ta 78W Tc | N-Channel | 1307pF @ 50V | 16.5m Ω @ 20A, 10V | 3.4V @ 250μA | 14.5A Ta 46A Tc | 23nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STU7N65M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu7n65m6-datasheets-9165.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 26 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 650V | 60W Tc | N-Channel | 220pF @ 100V | 990m Ω @ 2.5A, 10V | 3.75V @ 250μA | 5A Tc | 6.9nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT10H009LFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt10h009lfg7-datasheets-9168.pdf | 8-PowerVDFN | 24 Weeks | not_compliant | e3 | Matte Tin (Sn) | 100V | 2W Ta 30W Tc | N-Channel | 2361pF @ 50V | 8.5m Ω @ 20A, 10V | 2.5V @ 250μA | 13A Ta 50A Tc | 41nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STFI9N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf9n60m2-datasheets-1536.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 42 Weeks | EAR99 | STFI9 | 5.5A | 600V | 20W Tc | N-Channel | 320pF @ 100V | 780m Ω @ 3A, 10V | 4V @ 250μA | 5.5A Tc | 10nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT10H009LFG-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt10h009lfg7-datasheets-9168.pdf | 8-PowerVDFN | 24 Weeks | not_compliant | e3 | Matte Tin (Sn) | 100V | 2W Ta 30W Tc | N-Channel | 2361pF @ 50V | 8.5m Ω @ 20A, 10V | 2.5V @ 250μA | 13A Ta 50A Tc | 41nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD30NF04LT | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-std30nf04lt-datasheets-9106.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STD30N | NOT SPECIFIED | FET General Purpose Powers | 30A | Single | 40V | 50W Tc | N-Channel | 720pF @ 25V | 30m Ω @ 15A, 10V | 2.5V @ 250μA | 30A Tc | 25nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR18N15DTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr18n15dtrlp-datasheets-9093.pdf | 150V | 18A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Contains Lead, Lead Free | 2 | No SVHC | 125mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 8.8 ns | 25ns | 9.8 ns | 15 ns | 18A | 30V | 150V | SILICON | DRAIN | SWITCHING | 5.5V | 110W Tc | TO-252AA | 72A | 200 mJ | 150V | N-Channel | 900pF @ 25V | 5.5 V | 125m Ω @ 11A, 10V | 5.5V @ 250μA | 18A Tc | 43nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| STP11N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stu11n65m2-datasheets-4634.pdf | TO-220-3 | 16 Weeks | 329.988449mg | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STP11N | 1 | NOT SPECIFIED | 9.5 ns | 7.5ns | 15 ns | 26 ns | 7A | 25V | 3V | 85W Tc | 650V | N-Channel | 410pF @ 100V | 670m Ω @ 3.5A, 10V | 4V @ 250μA | 7A Tc | 12.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR48ZTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irfr48ztrpbf-datasheets-9197.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10.3886mm | 2.3876mm | 6.73mm | Lead Free | 2 | 12 Weeks | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 91W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 15 ns | 61ns | 35 ns | 40 ns | 42A | 20V | SILICON | DRAIN | SWITCHING | 91W Tc | TO-252AA | 250A | 74 mJ | 55V | N-Channel | 1720pF @ 25V | 11m Ω @ 37A, 10V | 4V @ 50μA | 42A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IPD65R950CFDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipd65r950cfdatma1-datasheets-9113.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | 3 | HIGH RELIABILITY | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 9 ns | 6.5ns | 13.8 ns | 43 ns | 3.9A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 36.7W Tc | TO-252AA | 11A | 0.95Ohm | 50 mJ | 700V | N-Channel | 380pF @ 100V | 950m Ω @ 1.5A, 10V | 4.5V @ 200μA | 3.9A Tc | 14.1nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SIR608DP-T1-RE3 | Vishay Siliconix | $1.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir608dpt1re3-datasheets-9119.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 45V | 6.25W Ta 104W Tc | N-Channel | 8900pF @ 20V | 1.2mOhm @ 20A, 10V | 2.3V @ 250μA | 51A Ta 208A Tc | 167nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STFU8N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 17 Weeks | 600V | 25W Tc | N-Channel | 800pF @ 100V | 295m Ω @ 6A, 10V | 5V @ 250μA | 12A Tc | 20nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA54DP-T1-GE3 | Vishay Siliconix | $1.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira54dpt1ge3-datasheets-9122.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 40V | 36.7W Tc | N-Channel | 5300pF @ 20V | 2.35mOhm @ 15A, 10V | 2.3V @ 250μA | 60A Tc | 48nC @ 4.5V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA36EP-T1_GE3 | Vishay Siliconix | $3.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqja36ept1ge3-datasheets-9126.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 40V | 500W Tc | N-Channel | 6636pF @ 25V | 1.24mOhm @ 15A, 10V | 3.5V @ 250μA | 350A Tc | 107nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM018NB03CR RLG | Taiwan Semiconductor Corporation | $3.65 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm018nb03crrlg-datasheets-9067.pdf | 8-PowerTDFN | 18 Weeks | 8-PDFN (5x6) | 30V | 3.1W Ta 136W Tc | N-Channel | 7252pF @ 15V | 1.8mOhm @ 29A, 10V | 2.5V @ 250μA | 29A Ta 194A Tc | 120nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS72DN-T1-GE3 | Vishay Siliconix | $1.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss72dnt1ge3-datasheets-9075.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 150V | 5.1W Ta 65.8W Tc | N-Channel | 550pF @ 75V | 42mOhm @ 7A, 10V | 4V @ 250μA | 7A Ta 25.5A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCAC80N10Y-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-mcac80n10ytp-datasheets-9052.pdf | 8-PowerTDFN | 12 Weeks | 100V | 85W | N-Channel | 6124pF @ 50V | 4.3m Ω @ 40A, 10V | 3V @ 250μA | 80A | 101.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB10N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp10n60m2-datasheets-8952.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 26 Weeks | 3.949996g | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | GULL WING | STB10N6 | 1 | Single | 85W | 1 | R-PSSO-G2 | 8.8 ns | 8ns | 13.2 ns | 32.5 ns | 7.5A | 25V | SILICON | DRAIN | SWITCHING | 600V | 85W Tc | 0.6Ohm | 650V | N-Channel | 400pF @ 100V | 600m Ω @ 3A, 10V | 4V @ 250μA | 7.5A Tc | 13.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| STULED625 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stdled625-datasheets-8994.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 18 Weeks | 3.949996g | 3 | No | STULED | 1 | 22 ns | 12ns | 20 ns | 49 ns | 5A | 30V | 620V | 70W Tc | N-Channel | 890pF @ 50V | 1.6 Ω @ 2.1A, 10V | 4.5V @ 50μA | 5A Tc | 35nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STU5N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu5n80k5-datasheets-9009.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 17 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 800V | 60W Tc | N-Channel | 177pF @ 100V | 1.75 Ω @ 2A, 10V | 5V @ 100μA | 4A Tc | 5nC @ 10V | 10V | ±30V |
