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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NVMFS6H848NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs6h848nt1g-datasheets-0152.pdf | 8-PowerTDFN, 5 Leads | 4 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 80V | 3.7W Ta 73W Tc | N-Channel | 1180pF @ 40V | 9.4m Ω @ 10A, 10V | 4V @ 70μA | 13A Ta 57A Tc | 16nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R280P7SE8228AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 600V | 53W Tc | N-Channel | 761pF @ 400V | 280m Ω @ 3.8A, 10V | 4V @ 190μA | 12A Tc | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM70N10CP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm70n10cprog-datasheets-0157.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | YES | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Single | 100V | 120W Tc | 70A | N-Channel | 4300pF @ 30V | 13m Ω @ 30A, 10V | 4V @ 250μA | 70A Tc | 145nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK5P53D(T6RSS-Q) | Toshiba Semiconductor and Storage | $4.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.3mm | 6.1mm | Lead Free | 16 Weeks | Unknown | 3 | No | Single | 80W | 1 | D-Pak | 540pF | 40 ns | 18ns | 8 ns | 55 ns | 5A | 30V | 525V | 2.4V | 80W Tc | 1.5Ohm | N-Channel | 540pF @ 25V | 1.5Ohm @ 2.5A, 10V | 4.4V @ 1mA | 5A Ta | 11nC @ 10V | 1.5 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SFP9530 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-sfp9530-datasheets-0099.pdf | TO-220-3 | Lead Free | 3 | 1.8g | 300mOhm | 3 | ACTIVE, NOT REC (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 66W | 1 | 13 ns | 22ns | 25 ns | 45 ns | 10.5A | 30V | SILICON | SWITCHING | 100V | 66W Tc | TO-220AB | 42A | -100V | P-Channel | 1035pF @ 25V | 300m Ω @ 5.3A, 10V | 4V @ 250μA | 10.5A Tc | 38nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| AOI296A | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-251-3 Stub Leads, IPak | 18 Weeks | 100V | 89W Tc | N-Channel | 3130pF @ 50V | 8.3m Ω @ 20A, 10V | 2.3V @ 250μA | 70A Tc | 60nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPN2R503NC,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII | Surface Mount | Surface Mount | 150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 2.23nF | 17 Weeks | 2.5mOhm | 8 | Single | 35W | 9ns | 24 ns | 68 ns | 40A | 20V | 700mW Ta 35W Tc | 30V | N-Channel | 2230pF @ 15V | 2.5m Ω @ 20A, 10V | 2.3V @ 500μA | 40A Ta | 40nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPAN60R650CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -40°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipan60r650cexksa1-datasheets-0053.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 9.9A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 28W Tc | TO-220AB | 19A | 0.65Ohm | 133 mJ | N-Channel | 440pF @ 100V | 650m Ω @ 2.4A, 10V | 3.5V @ 200μA | 9.9A Tc | 20.5nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| DMT31M6LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/diodesincorporated-dmt31m6lps13-datasheets-0111.pdf | 8-PowerTDFN | 22 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 2.5W Ta | N-Channel | 7019pF @ 15V | 1.35m Ω @ 20A, 10V | 3V @ 250μA | 35.8A Ta | 123nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN012-80PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/nexperiausainc-psmn01280ps127-datasheets-0058.pdf | TO-220-3 | 31.75mm | 6.35mm | 6.35mm | Lead Free | 3 | 12 Weeks | 453.59237mg | 3 | No | e3 | Tin (Sn) | NO | SINGLE | 3 | 148W | 1 | 19 ns | 16ns | 6 ns | 33 ns | 74A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 148W Tc | TO-220AB | 295A | 80V | N-Channel | 2782pF @ 12V | 11m Ω @ 15A, 10V | 4V @ 1mA | 74A Tc | 43nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SQD100N02_3M5L4GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd100n023m5l4ge3-datasheets-0114.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 20V | 83W Tc | N-Channel | 5500pF @ 10V | 3.5mOhm @ 30A, 10V | 2.5V @ 250μA | 100A Tc | 110nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH4004LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmth4004lps13-datasheets-0061.pdf | 8-PowerTDFN | 5 | 22 Weeks | 8 | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 100A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 2.6W Ta 138W Tc | 26A | 0.004Ohm | 110 mJ | N-Channel | 4508pF @ 20V | 2.5m Ω @ 50A, 10V | 3V @ 250μA | 26A Ta 100A Tc | 82.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C646NLWFAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvmfs5c646nlaft3g-datasheets-1559.pdf | 8-PowerTDFN, 5 Leads | 6 Weeks | ACTIVE (Last Updated: 18 hours ago) | yes | not_compliant | e3 | Tin (Sn) | 60V | 3.7W Ta 79W Tc | N-Channel | 2164pF @ 25V | 4.7m Ω @ 50A, 10V | 2V @ 250μA | 20A Ta 93A Tc | 33.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF11N62L | Alpha & Omega Semiconductor Inc. | $9.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | TO-220-3F | 1.99nF | 11A | 620V | 39W Tc | N-Channel | 1990pF @ 25V | 650mOhm @ 5.5A, 10V | 4.5V @ 250μA | 11A Tc | 37nC @ 10V | 650 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT430 | Alpha & Omega Semiconductor Inc. | $0.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aot430-datasheets-0079.pdf | TO-220-3 | 18 Weeks | No | 268W | 1 | TO-220 | 4.7nF | 80A | 25V | 75V | 268W Tc | N-Channel | 4700pF @ 30V | 11.5mOhm @ 30A, 10V | 4V @ 250μA | 80A Tc | 114nC @ 10V | 11.5 mΩ | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RDD020N60TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rdd020n60tl-datasheets-0085.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 20 Weeks | 600V | 20W Tc | N-Channel | 2A Ta | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPLK80R900P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | MOSFET (Metal Oxide) | 8-PowerTDFN | 18 Weeks | 800V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF530STRL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf530strlpbf-datasheets-7596.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 8 Weeks | D2PAK (TO-263) | 100V | 3.7W Ta 88W Tc | N-Channel | 670pF @ 25V | 160mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 26nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP4011SK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp4011sk313-datasheets-0093.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 17 Weeks | not_compliant | e3 | Matte Tin (Sn) | 40V | 1.8W Ta 4.2W Tc | P-Channel | 2747pF @ 20V | 11m Ω @ 9.8A, 10V | 2.5V @ 250μA | 14A Ta 74A Tc | 52nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG3N60SJ3 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmg3n60sj3-datasheets-0094.pdf | TO-251-3, IPak, Short Leads | 17 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 41W Tc | N-Channel | 354pF @ 25V | 3.5 Ω @ 1.5A, 10V | 4V @ 250μA | 2.8A Tc | 12.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSD221N06TL | ROHM Semiconductor | $3.95 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/rohm-rsd221n06tl-datasheets-6002.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 10 Weeks | 3 | EAR99 | not_compliant | e2 | Tin/Copper (Sn98Cu2) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Powers | R-PSSO-G2 | 25 ns | 45ns | 65 ns | 75 ns | 22A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 850mW Ta 20W Tc | N-Channel | 1500pF @ 10V | 26m Ω @ 22A, 10V | 3V @ 1mA | 22A Tc | 30nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF9530NSTRRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irf9530nstrrpbf-datasheets-0029.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 10 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.8W Ta 79W Tc | 14A | 56A | 0.2Ohm | 250 mJ | P-Channel | 760pF @ 25V | 200m Ω @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 58nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| BSC0501NSIATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc0501nsiatma1-datasheets-0037.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | yes | Tin | not_compliant | Halogen Free | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 4ns | 100A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 50W Tc | 29A | 400A | 0.0024Ohm | 20 mJ | N-Channel | 2200pF @ 15V | 1.9m Ω @ 30A, 10V | 2V @ 250μA | 29A Ta 100A Tc | 33nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| AOTF4S60 | Alpha & Omega Semiconductor Inc. | $0.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 3 | 16 Weeks | 3 | yes | No | SINGLE | 3 | 31W | 1 | 4A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 31W Tc | TO-220AB | 4A | 0.9Ohm | 77 mJ | N-Channel | 263pF @ 100V | 900m Ω @ 2A, 10V | 4.1V @ 250μA | 4A Tc | 6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA52DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | /files/vishay-sira52dpt1ge3-datasheets-4741.pdf | PowerPAK® SO-8 | 1.17mm | 14 Weeks | S17-0173-Single | 1 | 4.8W | 150°C | PowerPAK® SO-8 | 10 ns | 38 ns | 39.6A | 40V | 48W Tc | 1.4mOhm | 40V | N-Channel | 7150pF @ 20V | 1.7mOhm @ 15A, 10V | 2.4V @ 250μA | 60A Tc | 150nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK35S04K3L(T6L1,NQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | 58W | 1 | DPAK+ | 1.37nF | 19 ns | 9ns | 12 ns | 35 ns | 35A | 20V | 40V | 58W Tc | N-Channel | 1370pF @ 10V | 10.3mOhm @ 17.5A, 10V | 3V @ 1mA | 35A Ta | 28nC @ 10V | 10.3 Ω | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK5P50D(T6RSS-Q) | Toshiba Semiconductor and Storage | $1.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 16 Weeks | 3 | No | 80W | 1 | 18ns | 8 ns | 5A | 30V | 500V | 80W Tc | N-Channel | 490pF @ 25V | 1.5 Ω @ 2.5A, 10V | 4.4V @ 1mA | 5A Ta | 11nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF4300N80Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fcpf4300n80z-datasheets-9974.pdf | TO-220-3 Full Pack | 17 Weeks | 2.27g | 4.3Ohm | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 10 ns | 6.5ns | 16 ns | 21 ns | 1.6A | 30V | 800V | 19.2W Tc | N-Channel | 355pF @ 100V | 4.3 Ω @ 800mA, 10V | 4.5V @ 160μA | 1.6A Tc | 8.8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT6009LJ3 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt6009lj3-datasheets-9983.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 28 Weeks | 60V | 2.9W Ta 83.3W Tc | N-Channel | 1925pF @ 30V | 10m Ω @ 13.5A, 10V | 2V @ 250μA | 74.5A Tc | 33.5nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL520NSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irl520nstrlpbf-datasheets-9993.pdf | 100V | 10A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 180MOhm | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 3.8W | 1 | R-PSSO-G2 | 4 ns | 35ns | 22 ns | 23 ns | 10A | 16V | 100V | SILICON | DRAIN | SWITCHING | 2V | 3.8W Ta 48W Tc | 160 ns | 85 mJ | 100V | N-Channel | 440pF @ 25V | 2 V | 180m Ω @ 6A, 10V | 2V @ 250μA | 10A Tc | 20nC @ 5V | 4V 10V | ±16V |
